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1. 发明授权

US10544041B2 Method for manufacturing graphene-coated object, negative electrode of secondary battery including graphene-coated object, and secondary battery including the negative electrode 有权
公开(公告)号：US10544041B2
公开(公告)日：2020-01-28
申请号：US15810953
申请日：2017-11-13
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Teppei Oguni , Takeshi Osada , Toshihiko Takeuchi
IPC分类号： B82Y30/00 , C25D13/22 , H01M4/04 , H01M4/13 , H01M4/133 , H01M4/134 , H01M4/139 , H01M4/1393 , H01M4/1395 , H01M4/36 , H01M4/587 , H01M10/0525 , C25D13/02 , H01M4/02
摘要： To form graphene to a practically even thickness on an object having an uneven surface or a complex surface, in particular, an object having a surface with a three-dimensional structure due to complex unevenness, or an object having a curved surface. The object and an electrode are immersed in a graphene oxide solution, and voltage is applied between the object and the electrode. At this time, the object serves as an anode. Graphene oxide is attracted to the anode because of being negatively charged, and deposited on the surface of the object to have a practically even thickness. A portion where graphene oxide is deposited is unlikely coated with another graphene oxide. Thus, deposited graphene oxide is reduced to graphene, whereby graphene can be formed to have a practically even thickness on an object having surface with complex unevenness.

2. 发明授权

US10243006B2 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US10243006B2
公开(公告)日：2019-03-26
申请号：US15845079
申请日：2017-12-18
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hidekazu Miyairi , Takeshi Osada , Shunpei Yamazaki
IPC分类号： H01L27/14 , H01L27/12 , H01L29/786 , H01L29/423 , H01L29/49 , G02F1/1362 , H01L27/32
摘要： As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost.

3. 发明授权

US09601603B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US09601603B2
公开(公告)日：2017-03-21
申请号：US15071674
申请日：2016-03-16
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hidekazu Miyairi , Takeshi Osada , Shunpei Yamazaki
IPC分类号： H01L21/00 , H01L27/00 , H01L29/00 , H01L29/66 , H01L27/12 , H01L29/786 , H01L21/477 , H01L29/24 , H01L29/417 , H01L29/423 , H01L21/02 , H01L21/4763 , H01L29/45
CPC分类号： H01L29/7869 , H01L21/02565 , H01L21/47635 , H01L21/477 , H01L27/1225 , H01L27/1251 , H01L27/1259 , H01L29/24 , H01L29/41733 , H01L29/42356 , H01L29/42384 , H01L29/45 , H01L29/66969 , H01L29/78621 , H01L29/78645 , H01L29/78648
摘要： As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.

4. 发明授权

US09590110B2 Ultraviolet light sensor circuit 有权
标题翻译：紫外光传感器电路
公开(公告)号：US09590110B2
公开(公告)日：2017-03-07
申请号：US14476775
申请日：2014-09-04
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Takeshi Osada
IPC分类号： H01L29/786 , H03F1/30 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/1255 , H03F1/304
摘要： A sensor circuit with high sensitivity to ultraviolet light. Ultraviolet light is detected using a transistor containing an oxide semiconductor. When the transistor is irradiated with ultraviolet light or light including ultraviolet light, the drain current of the transistor depends on the intensity of the ultraviolet light. Data on the intensity of ultraviolet light is obtained by measuring the drain current of the transistor. Since the band gap of an oxide semiconductor is wider than that of silicon, the sensitivity to light with a wavelength in the ultraviolet region can be increased. Furthermore, an increase in dark current caused by temperature rise in the sensor circuit can be suppressed, resulting in a wider allowable ambient temperature range of the sensor circuit.
摘要翻译：对紫外线具有高灵敏度的传感器电路。使用含有氧化物半导体的晶体管检测紫外线。当用紫外线或包括紫外线的光照射晶体管时，晶体管的漏极电流取决于紫外光的强度。通过测量晶体管的漏极电流来获得关于紫外光强度的数据。由于氧化物半导体的带隙比硅更宽，所以可以提高对紫外线区域的波长的光的敏感度。此外，可以抑制由传感器电路中的温度升高引起的暗电流的增加，导致传感器电路的允许环境温度范围更宽。

5. 发明授权

US09570619B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09570619B2
公开(公告)日：2017-02-14
申请号：US14275522
申请日：2014-05-12
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hidekazu Miyairi , Takeshi Osada , Shunpei Yamazaki
IPC分类号： H01L27/14 , H01L29/786 , H01L27/12 , H01L29/423 , G02F1/1362 , H01L27/32
CPC分类号： H01L27/1225 , G02F1/1362 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L27/3262 , H01L29/42384 , H01L29/4908 , H01L29/78606 , H01L29/78645 , H01L29/78648 , H01L29/7869
摘要： As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost.
摘要翻译：由于显示装置具有更高的清晰度，因此像素数量增加，因此栅极线和信号线的数量增加。当栅极线和信号线的数量增加时，难以通过结合等安装包括用于驱动栅极线和信号线的驱动电路的IC芯片，由此增加制造成本。用于驱动像素部分的像素部分和驱动电路设置在同一基板上，并且驱动电路的至少一部分包括薄膜晶体管，该薄膜晶体管包括夹在栅电极之间的氧化物半导体。在氧化物半导体和设置在氧化物半导体上的栅电极之间设置沟道保护层。像素部分和驱动电路设置在相同的基板上，这导致制造成本的降低。

6. 发明授权

US11248307B2 Method for manufacturing graphene-coated object, negative electrode of secondary battery including graphene-coated object, and secondary battery including the negative electrode 有权
公开(公告)号：US11248307B2
公开(公告)日：2022-02-15
申请号：US16751938
申请日：2020-01-24
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Teppei Oguni , Takeshi Osada , Toshihiko Takeuchi
IPC分类号： B82Y30/00 , C25D13/22 , H01M10/0525 , H01M4/587 , H01M4/36 , H01M4/1395 , H01M4/1393 , H01M4/139 , H01M4/134 , H01M4/133 , H01M4/13 , H01M4/04 , C25D13/02 , H01M4/02
摘要： To form graphene to a practically even thickness on an object having an uneven surface or a complex surface, in particular, an object having a surface with a three-dimensional structure due to complex unevenness, or an object having a curved surface. The object and an electrode are immersed in a graphene oxide solution, and voltage is applied between the object and the electrode. At this time, the object serves as an anode. Graphene oxide is attracted to the anode because of being negatively charged, and deposited on the surface of the object to have a practically even thickness. A portion where graphene oxide is deposited is unlikely coated with another graphene oxide. Thus, deposited graphene oxide is reduced to graphene, whereby graphene can be formed to have a practically even thickness on an object having surface with complex unevenness.

7. 发明申请

US20210050453A1 Semiconductor Device and Method for Manufacturing the Same 有权
公开(公告)号：US20210050453A1
公开(公告)日：2021-02-18
申请号：US17002971
申请日：2020-08-26
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Hidekazu Miyairi , Takeshi Osada , Shunpei Yamazaki
IPC分类号： H01L29/786 , H01L27/12 , H01L21/477 , H01L29/24 , H01L29/417 , H01L29/423 , H01L29/66 , H01L21/02 , H01L21/4763 , H01L29/45
摘要： As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.

8. 发明授权

US10666093B2 Power storage device and semiconductor device provided with the power storage device 有权
公开(公告)号：US10666093B2
公开(公告)日：2020-05-26
申请号：US15957313
申请日：2018-04-19
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Takeshi Osada
IPC分类号： H02J50/23 , H02J7/04 , H02J50/12 , H02J50/80 , H02J50/40 , H01M10/04 , H01M10/44 , H02J7/00 , H01F38/14 , H03D9/00 , H04B5/00 , H02J50/20 , H02J7/35 , H02J7/02
摘要： An object is to provide a power storage device provided with a battery that is a power storage means, for safe and accurate supply of electric power in a short period of time for drive power supply voltage without checking remaining capacity of the battery or changing batteries with deterioration over time of the battery for drive power supply voltage. The power storage device is provided with a battery that is a power storage means as a power supply for supplying electric power and a counter circuit for counting charging time of the power storage means. An electromagnetic wave with electric field intensity, magnetic field intensity, and power flux density per unit time which are transmitted from a power feeder are controlled, and the power storage means is efficiently charged using the electromagnetic wave in a short period of time.

9. 发明授权

US10170632B2 Semiconductor device including oxide semiconductor layer 有权
公开(公告)号：US10170632B2
公开(公告)日：2019-01-01
申请号：US15443096
申请日：2017-02-27
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hidekazu Miyairi , Takeshi Osada , Shunpei Yamazaki
IPC分类号： H01L27/00 , H01L29/00 , H01L29/786 , H01L27/12 , H01L21/477 , H01L29/24 , H01L29/417 , H01L29/423 , H01L29/66 , H01L21/02 , H01L21/4763 , H01L29/45
摘要： As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.

10. 发明授权

US09819352B2 Clock generation circuit and semiconductor device provided therewith 有权
公开(公告)号：US09819352B2
公开(公告)日：2017-11-14
申请号：US14797825
申请日：2015-07-13
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Takeshi Osada
IPC分类号： H03L7/06 , H03L7/099 , H03L7/18
CPC分类号： H03L7/0995 , H03L7/18
摘要： It is an object of the present invention to solve a problem that malfunction of communication is generated by varying a frequency of a clock due to noise from outside in a case where there is no supplied signal in a circuit which performs negative feedback control so that the supplied signal and the feedback signal can maintain a fixed phase relationship between the signals. The present invention provides a configuration including a PLL circuit and an oscillator circuit, where a switch for switching an output between a signal from the PLL circuit and a signal from the oscillator circuit to the signal output portion is provided to switch from a connection to the PLL circuit to a connection to the oscillator circuit in a case where there is no received signal.

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