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1. 发明授权

US11430894B2 Semiconductor device including a oxide semiconductor transistor 有权
公开(公告)号：US11430894B2
公开(公告)日：2022-08-30
申请号：US16710456
申请日：2019-12-11
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Kazuya Hanaoka , Daisuke Matsubayashi , Yoshiyuki Kobayashi , Shunpei Yamazaki , Shinpei Matsuda
IPC分类号： H01L29/78 , H01L29/786 , H01L29/417
摘要： Provided is a semiconductor device in which deterioration of electric characteristics which becomes more noticeable as the semiconductor device is miniaturized can be suppressed. The semiconductor device includes a first oxide film, an oxide semiconductor film over the first oxide film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a second oxide film over the oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the second oxide film, and a gate electrode in contact with the gate insulating film. A top end portion of the oxide semiconductor film is curved when seen in a channel width direction.

2. 发明授权

US09842940B2 Semiconductor device 有权
公开(公告)号：US09842940B2
公开(公告)日：2017-12-12
申请号：US15062268
申请日：2016-03-07
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shinya Sasagawa , Motomu Kurata , Kazuya Hanaoka , Yoshiyuki Kobayashi , Daisuke Matsubayashi
IPC分类号： H01L29/78 , H01L29/786 , H01L29/04 , H01L29/24
CPC分类号： H01L29/78696 , H01L29/045 , H01L29/24 , H01L29/7869
摘要： A semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes an insulating layer, a semiconductor layer over the insulating layer, a source electrode layer and a drain electrode layer electrically connected to the semiconductor layer, a gate insulating film over the semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode layer overlapping with part of the semiconductor layer, part of the source electrode layer, and part of the drain electrode layer with the gate insulating film therebetween. A cross section of the semiconductor layer in the channel width direction is substantially triangular or substantially trapezoidal. The effective channel width is shorter than that for a rectangular cross section.

3. 发明授权

US09324876B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09324876B2
公开(公告)日：2016-04-26
申请号：US14474533
申请日：2014-09-02
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yoshiyuki Kobayashi , Daisuke Matsubayashi
IPC分类号： H01L31/06 , H01L29/786 , H01L29/417
CPC分类号： H01L29/7869 , H01L29/41733 , H01L29/78696
摘要： A semiconductor device includes a first oxide semiconductor film over an insulating surface; a second oxide semiconductor film over the first oxide semiconductor film; a source electrode and a drain electrode in contact with side surfaces of the first oxide semiconductor film, side surfaces of the second oxide semiconductor film, and the top surface of the second oxide semiconductor film; a third oxide semiconductor film over the second oxide semiconductor film, the source electrode, and the drain electrode; a gate insulating film over the third oxide semiconductor film; and a gate electrode in contact with the top surface of the gate insulating film. A length obtained by subtracting a channel length between the source electrode and the drain electrode from a length of the second oxide semiconductor film in the channel length direction is 0.2 times to 2.0 times as long as the channel length.
摘要翻译：半导体器件包括绝缘表面上的第一氧化物半导体膜; 第一氧化物半导体膜上的第二氧化物半导体膜; 与第一氧化物半导体膜的侧表面，第二氧化物半导体膜的侧表面和第二氧化物半导体膜的顶表面接触的源电极和漏电极; 第二氧化物半导体膜上的第三氧化物半导体膜，源电极和漏电极; 第三氧化物半导体膜上的栅极绝缘膜; 以及与栅极绝缘膜的顶表面接触的栅电极。通过从沟道长度方向上的第二氧化物半导体膜的长度减去源电极和漏电极之间的沟道长度而获得的长度是沟道长度的0.2倍至2.0倍。

4. 发明申请

US20150076493A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20150076493A1
公开(公告)日：2015-03-19
申请号：US14480900
申请日：2014-09-09
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Yoshiyuki Kobayashi , Daisuke Matsubayashi
IPC分类号： H01L29/10 , H01L29/66 , H01L21/283 , H01L29/786
CPC分类号： H01L29/1033 , H01L29/1054 , H01L29/66969 , H01L29/785 , H01L29/7869 , H01L29/78696
摘要： To provide a transistor having high field effect mobility. To provide a transistor having stable electrical characteristics. To provide a transistor having low off-state current (current in an off state). To provide a semiconductor device including the transistor. The semiconductor device includes a semiconductor; a source electrode and a drain electrode including regions in contact with a top surface and side surfaces of the semiconductor; a gate insulating film including a region in contact with the semiconductor; and a gate electrode including a region facing the semiconductor with the gate insulating film provided therebetween. A length of a region of the semiconductor, which is not in contact with the source and drain electrodes, is shorter than a length of a region of the semiconductor, which is in contact with the source and drain electrodes, in a channel width direction.
摘要翻译：提供具有高场效应迁移率的晶体管。提供具有稳定电特性的晶体管。提供具有低截止电流（截止状态下的电流）的晶体管。提供包括晶体管的半导体器件。半导体器件包括半导体; 源电极和漏电极，包括与半导体的顶表面和侧表面接触的区域; 包括与半导体接触的区域的栅极绝缘膜; 以及栅电极，其包括面对半导体的区域，其间设置有栅极绝缘膜。不与源极和漏极接触的半导体区域的长度比在沟道宽度方向上与源极和漏极接触的半导体的区域的长度短。

5. 发明申请

US20140339544A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20140339544A1
公开(公告)日：2014-11-20
申请号：US14277465
申请日：2014-05-14
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Kazuya HANAOKA , Daisuke Matsubayashi , Yoshiyuki Kobayashi , Shunpei Yamazaki , Shinpei Matsuda
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/41733 , H01L29/785 , H01L29/7854 , H01L29/78696
摘要： Provided is a semiconductor device in which deterioration of electric characteristics which becomes more noticeable as the semiconductor device is miniaturized can be suppressed. The semiconductor device includes a first oxide film, an oxide semiconductor film over the first oxide film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a second oxide film over the oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the second oxide film, and a gate electrode in contact with the gate insulating film. A top end portion of the oxide semiconductor film is curved when seen in a channel width direction.
摘要翻译：可以抑制半导体装置小型化时变得更显着的电特性劣化的半导体装置。半导体器件包括第一氧化物膜，第一氧化物膜上的氧化物半导体膜，与氧化物半导体膜接触的源电极和漏电极，氧化物半导体膜上的第二氧化物膜，源电极和漏电极，第二氧化膜上的栅极绝缘膜，以及与栅极绝缘膜接触的栅电极。氧化物半导体膜的顶端部在通道宽度方向观察时呈弯曲状。

6. 发明授权

US09847429B2 Semiconductor device 有权
公开(公告)号：US09847429B2
公开(公告)日：2017-12-19
申请号：US15057614
申请日：2016-03-01
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Daisuke Matsubayashi , Yoshiyuki Kobayashi
IPC分类号： H01L29/786 , H01L29/423 , H01L27/12 , H01L29/06
CPC分类号： H01L29/78693 , H01L27/1225 , H01L29/0684 , H01L29/42384 , H01L29/7869 , H01L29/78696
摘要： A semiconductor device is provided with a first oxide semiconductor film over an insulating surface; a second oxide semiconductor film over the first oxide semiconductor film; a third oxide semiconductor film in contact with a top surface of the insulating surface, a side surface of the first oxide semiconductor film, and side and top surfaces of the second oxide semiconductor film; a gate insulating film over the third oxide semiconductor film; and a gate electrode in contact with the gate insulating film and faces the top and side surfaces a of the second oxide semiconductor film. A thickness of the first oxide semiconductor film is larger than a sum of a thickness of the third oxide semiconductor film and a thickness of the gate insulating film, and the difference is larger than or equal to 20 nm.

7. 发明授权

US09722088B2 Semiconductor device 有权
公开(公告)号：US09722088B2
公开(公告)日：2017-08-01
申请号：US14277465
申请日：2014-05-14
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Kazuya Hanaoka , Daisuke Matsubayashi , Yoshiyuki Kobayashi , Shunpei Yamazaki , Shinpei Matsuda
IPC分类号： H01L29/786 , H01L29/78
CPC分类号： H01L29/7869 , H01L29/41733 , H01L29/785 , H01L29/7854 , H01L29/78696
摘要： Provided is a semiconductor device in which deterioration of electric characteristics which becomes more noticeable as the semiconductor device is miniaturized can be suppressed. The semiconductor device includes a first oxide film, an oxide semiconductor film over the first oxide film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a second oxide film over the oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the second oxide film, and a gate electrode in contact with the gate insulating film. A top end portion of the oxide semiconductor film is curved when seen in a channel width direction.

8. 发明授权

US09705004B2 Semiconductor device 有权
公开(公告)号：US09705004B2
公开(公告)日：2017-07-11
申请号：US14812028
申请日：2015-07-29
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yoshiyuki Kobayashi , Shinpei Matsuda , Daisuke Matsubayashi , Hiroyuki Tomisu
IPC分类号： H01L29/78 , H01L29/04 , H01L29/786 , G02F1/1368 , H01L21/822 , H01L27/06
CPC分类号： H01L29/7869 , G02F1/1368 , G02F2201/58 , H01L21/8221 , H01L27/0688 , H01L29/045 , H01L29/78696
摘要： A transistor whose channel is formed in a semiconductor having dielectric anisotropy is provided. A transistor having a small subthreshold swing value is provided. A transistor having normally-off electrical characteristics is provided. A transistor having a low leakage current in an off state is provided. A semiconductor device includes an insulator, a semiconductor, and a conductor. In the semiconductor device, the semiconductor includes a region overlapping with the conductor with the insulator positioned therebetween, and a dielectric constant of the region in a direction perpendicular to a top surface of the region is higher than a dielectric constant of the region in a direction parallel to the top surface.

9. 发明授权

US09287410B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09287410B2
公开(公告)日：2016-03-15
申请号：US14571993
申请日：2014-12-16
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shinya Sasagawa , Motomu Kurata , Kazuya Hanaoka , Yoshiyuki Kobayashi , Daisuke Matsubayashi
IPC分类号： H01L27/04 , H01L29/786 , H01L29/04
CPC分类号： H01L29/78696 , H01L29/045 , H01L29/24 , H01L29/7869
摘要： A semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes an insulating layer, a semiconductor layer over the insulating layer, a source electrode layer and a drain electrode layer electrically connected to the semiconductor layer, a gate insulating film over the semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode layer overlapping with part of the semiconductor layer, part of the source electrode layer, and part of the drain electrode layer with the gate insulating film therebetween. A cross section of the semiconductor layer in the channel width direction is substantially triangular or substantially trapezoidal. The effective channel width is shorter than that for a rectangular cross section.
摘要翻译：提供了具有良好电气特性的半导体器件。半导体器件包括绝缘层，绝缘层上的半导体层，与半导体层电连接的源极电极层和漏极电极层，半导体层上的栅极绝缘膜，源极电极层和漏极电极以及与半导体层的一部分，源极电极层的一部分以及其间具有栅极绝缘膜的漏极电极层的一部分重叠的栅极电极层。半导体层在沟道宽度方向上的截面基本上是三角形或大致梯形。有效通道宽度短于矩形截面的宽度。

10. 发明授权

US09281409B2 Thin film transistor for integrated circuit 有权
标题翻译：用于集成电路的薄膜晶体管
公开(公告)号：US09281409B2
公开(公告)日：2016-03-08
申请号：US14330444
申请日：2014-07-14
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Daisuke Matsubayashi , Yoshiyuki Kobayashi
IPC分类号： H01L29/786 , H01L29/423 , H01L27/12
CPC分类号： H01L29/78693 , H01L27/1225 , H01L29/0684 , H01L29/42384 , H01L29/7869 , H01L29/78696
摘要： A semiconductor device is provided with a first oxide semiconductor film over an insulating surface; a second oxide semiconductor film over the first oxide semiconductor film; a third oxide semiconductor film in contact with a top surface of the insulating surface, a side surface of the first oxide semiconductor film, and side and top surfaces of the second oxide semiconductor film; a gate insulating film over the third oxide semiconductor film; and a gate electrode in contact with the gate insulating film and faces the top and side surfaces a of the second oxide semiconductor film. A thickness of the first oxide semiconductor film is larger than a sum of a thickness of the third oxide semiconductor film and a thickness of the gate insulating film, and the difference is larger than or equal to 20 nm.
摘要翻译：半导体器件在绝缘表面上设置有第一氧化物半导体膜; 第一氧化物半导体膜上的第二氧化物半导体膜; 与所述绝缘表面的顶表面接触的第三氧化物半导体膜，所述第一氧化物半导体膜的侧表面以及所述第二氧化物半导体膜的侧表面和顶表面; 第三氧化物半导体膜上的栅极绝缘膜; 以及与栅极绝缘膜接触并与第二氧化物半导体膜的顶表面和侧表面a相对的栅电极。第一氧化物半导体膜的厚度大于第三氧化物半导体膜的厚度与栅极绝缘膜的厚度的和，并且该差值大于或等于20nm。

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