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1. 发明授权

US09449718B2 Method for setting a flash memory for HTOL testing 有权
标题翻译： HTOL测试闪存设置方法
公开(公告)号：US09449718B2
公开(公告)日：2016-09-20
申请号：US14566060
申请日：2014-12-10
申请人： Semiconductor Manufacturing International (Beijing) Corporation , Semiconductor Manufacturing International (Shanghai) Corporation
发明人： Yipeng Chan , Kijun Kim , Guoxu Zhao , Xiao Ye , Zhen Yang
IPC分类号： G11C29/50 , G11C16/30 , G11C29/06 , G11C29/44 , G11C16/00
CPC分类号： G11C29/50004 , G11C16/00 , G11C16/30 , G11C29/06 , G11C29/44
摘要： A method for setting voltages in a flash memory for high temperature operating life (HTOL) testing is provided. The flash memory includes a substrate, a source, and a control gate. The method includes adjusting the voltages that are applied to the source, the control gate, and the substrate, such that there is no voltage difference between the control gate and the source, and no voltage difference between the control gate and the substrate. Specifically, adjusting the voltages includes setting the voltage that is applied to the source to a ground voltage, setting the voltage that is applied to the control gate to the ground voltage, and setting the voltage that is applied to the substrate to a power supply voltage.
摘要翻译：提供了一种用于设置用于高温工作寿命（HTOL）测试的闪速存储器中的电压的方法。闪存包括基板，源极和控制栅极。该方法包括调整施加到源极，控制栅极和衬底的电压，使得控制栅极和源极之间没有电压差，并且控制栅极和衬底之间没有电压差。具体地，调整电压包括将施加到源极的电压设定为接地电压，将施加到控制栅极的电压设定为接地电压，将施加到基板的电压设定为电源电压。

2. 发明授权

US09905566B2 Mask read-only memory device and fabrication method thereof 有权
公开(公告)号：US09905566B2
公开(公告)日：2018-02-27
申请号：US14989494
申请日：2016-01-06
申请人： Semiconductor Manufacturing International (Shanghai) Corporation
发明人： Chao Zhang , Yipeng Chan
IPC分类号： H01L27/112
CPC分类号： H01L27/11253 , H01L27/112
摘要： The disclosed subject matter provides a mask read-only memory (M-ROM) device and fabrication method thereof. In an M-ROM device, a first layer having a first type doping is formed in a substrate. A plurality of buried lines is formed in the first layer of the substrate. The plurality of buried lines are arranged in parallel in a first direction and isolated from each other. An epitaxial growth process is used to form a second layer on the first layer of the substrate. A plurality of diodes is formed in the second layer. The plurality of diodes is arranged in an array. Each diode includes a first electrode having a second type doping and connecting with one of the plurality of buried lines, and a second electrode having a first type doping and located on the first electrode.

3. 发明授权

US09691974B2 Phase-change device, related manufacturing method, and related electronic device 有权
公开(公告)号：US09691974B2
公开(公告)日：2017-06-27
申请号：US15187293
申请日：2016-06-20
申请人： Semiconductor Manufacturing International (Shanghai) Corporation
发明人： Ying Li , Yipeng Chan , Lei Wang
IPC分类号： H01L45/00 , H01L21/306 , H01L27/24
CPC分类号： H01L45/06 , H01L21/306 , H01L27/2436 , H01L45/144 , H01L45/16 , H01L45/1675
摘要： A method for manufacturing a phase-change device may include the following steps: preparing a substrate; preparing a first dielectric layer, which may be positioned on the substrate; preparing a first electrode, which may be positioned in the first dielectric layer; forming a phase-change material layer, which may overlap the first electrode; processing (e.g., etching) the phase-change material layer to form a phase-change member, which may be electrically connected to the first electrode; forming an etch-stop layer, which may overlap and/or cover the phase-change member; forming an intermediary layer, which may be positioned on the etch-stop layer; forming a second dielectric layer, which may be positioned on the intermediary layer; and forming a second electrode, which may extend through the second dielectric layer, the intermediary layer, and the etch-stop layer and may be electrically connected to the phase-change member.

4. 发明授权

US10062702B2 Mask read-only memory device 有权
公开(公告)号：US10062702B2
公开(公告)日：2018-08-28
申请号：US15868098
申请日：2018-01-11
申请人： Semiconductor Manufacturing International (Shanghai) Corporation
发明人： Chao Zhang , Yipeng Chan
IPC分类号： H01L27/112
CPC分类号： H01L27/11253 , H01L27/112
摘要： A mask read-only memory (M-ROM) device is provided. In an M-ROM device, a first layer having a first type doping is formed in a substrate. A plurality of buried lines is formed in the first layer of the substrate. The plurality of buried lines are arranged in parallel in a first direction and isolated from each other. An epitaxial growth process is used to form a second layer on the first layer of the substrate. A plurality of diodes is formed in the second layer. The plurality of diodes is arranged in an array. Each diode includes a first electrode having a second type doping and connecting with one of the plurality of buried lines, and a second electrode having a first type doping and located on the first electrode.

5. 发明授权

US09419054B2 Phase-change device, related manufacturing method, and related electronic device 有权
标题翻译：相变装置，相关制造方法及相关电子装置
公开(公告)号：US09419054B2
公开(公告)日：2016-08-16
申请号：US14614099
申请日：2015-02-04
申请人： Semiconductor Manufacturing International (Shanghai) Corporation
发明人： Ying Li , Yipeng Chan , Lei Wang
IPC分类号： H01L45/00 , H01L27/24 , H01L21/306
CPC分类号： H01L45/06 , H01L21/306 , H01L27/2436 , H01L45/144 , H01L45/16 , H01L45/1675
摘要： A method for manufacturing a phase-change device may include the following steps: preparing a substrate; preparing a first dielectric layer, which may be positioned on the substrate; preparing a first electrode, which may be positioned in the first dielectric layer; forming a phase-change material layer, which may overlap the first electrode; processing (e.g., etching) the phase-change material layer to form a phase-change member, which may be electrically connected to the first electrode; forming an etch-stop layer, which may overlap and/or cover the phase-change member; forming an intermediary layer, which may be positioned on the etch-stop layer; forming a second dielectric layer, which may be positioned on the intermediary layer; and forming a second electrode, which may extend through the second dielectric layer, the intermediary layer, and the etch-stop layer and may be electrically connected to the phase-change member.
摘要翻译：相变装置的制造方法可以包括以下步骤：准备基板; 制备可位于基底上的第一介电层; 制备可位于第一介电层中的第一电极; 形成可与第一电极重叠的相变材料层; 处理（例如蚀刻）相变材料层以形成可相互电连接的第一电极的相变元件; 形成可以重叠和/或覆盖相变构件的蚀刻停止层; 形成中间层，其可以位于蚀刻停止层上; 形成第二电介质层，其可以位于中间层上; 以及形成第二电极，其可以延伸穿过第二介电层，中间层和蚀刻停止层，并且可以电连接到相变元件。

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