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1. 发明授权

US09136469B2 Phase change memories 有权
标题翻译：相变记忆
公开(公告)号：US09136469B2
公开(公告)日：2015-09-15
申请号：US14642573
申请日：2015-03-09
申请人： Semiconductor Manufacturing International (Shanghai) Corporation
发明人： Ying Li , Neil Zhu , Guanping Wu
IPC分类号： H01L21/06 , H01L45/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/1253 , H01L45/144 , H01L45/1683
摘要： A method is provided for fabricating a phase change memory. The method includes providing a semiconductor substrate having a bottom electrode connecting with one or more semiconductor devices, and forming a first dielectric layer on the semiconductor substrate. The method also includes forming a loop-shape electrode in the first dielectric layer, and forming a second dielectric layer having a first opening exposing a portion of the first dielectric layer and a portion of the loop-shape electrode. Further, the method includes forming a phase change layer in the first opening of the second dielectric layer such that a contact area between the phase change layer and the loop-shape electrode may be controlled to achieve desired contact, and forming a top electrode.
摘要翻译：提供了一种用于制造相变存储器的方法。该方法包括提供具有与一个或多个半导体器件连接的底部电极并在半导体衬底上形成第一电介质层的半导体衬底。该方法还包括在第一电介质层中形成环形电极，以及形成具有暴露第一电介质层的一部分和环形电极的一部分的第一开口的第二电介质层。此外，该方法包括在第二电介质层的第一开口中形成相变层，使得可以控制相变层和环形电极之间的接触面积以实现期望的接触，并形成顶部电极。

2. 发明授权

US09589837B2 Electrode manufacturing method, fuse device and manufacturing method therefor 有权
标题翻译：电极制造方法，保险丝装置及其制造方法
公开(公告)号：US09589837B2
公开(公告)日：2017-03-07
申请号：US14054371
申请日：2013-10-15
申请人： Semiconductor Manufacturing International (Shanghai) Corporation
发明人： Ying Li , Guanping Wu
IPC分类号： H01L27/24 , H01L21/768 , H01L45/00 , H01L23/525
CPC分类号： H01L21/76877 , H01L23/5256 , H01L27/24 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/16 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure relates to an electrode manufacturing method, and a fuse device and manufacturing method therefor. The fuse device includes a fuse element including a phase change material, and a first electrode formed in contact with the fuse element. The phase change material may include doped or undoped chalcogenide. The first electrode may have a sublithographic dimension at a portion where the first electrode contacts the fuse element. When the phase change material has a layer thickness less than or equal to about 30 nm, and a pulse current less than or equal to about 3 mA is applied to the fuse element via the first electrode, the fuse element may undergo a phase change, so as to convert the fuse device into a blow-out state.
摘要翻译：本发明涉及一种电极制造方法，以及一种熔丝装置及其制造方法。保险丝装置包括一个包括相变材料的熔丝元件和与熔丝元件接触形成的第一电极。相变材料可以包括掺杂或未掺杂的硫族化物。第一电极可以在第一电极接触熔丝元件的部分处具有亚光刻尺寸。当相变材料具有小于或等于约30nm的层厚度，并且经由第一电极将小于或等于约3mA的脉冲电流施加到熔丝元件时，熔丝元件可能经历相变，以将熔丝器件转换成吹出状态。

3. 发明授权

US09006022B2 Method for fabricating phase change memory 有权
标题翻译：制造相变存储器的方法
公开(公告)号：US09006022B2
公开(公告)日：2015-04-14
申请号：US14056253
申请日：2013-10-17
申请人： Semiconductor Manufacturing International (Shanghai) Corporation
发明人： Ying Li , Neil Zhu , Guanping Wu
IPC分类号： H01L21/06 , H01L45/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/1253 , H01L45/144 , H01L45/1683
摘要： A method is provided for fabricating a phase change memory. The method includes providing a semiconductor substrate having a bottom electrode connecting with one or more semiconductor devices, and forming a first dielectric layer on the semiconductor substrate. The method also includes forming a loop-shape electrode in the first dielectric layer, and forming a second dielectric layer having a first opening exposing a portion of the first dielectric layer and a portion of the loop-shape electrode. Further, the method includes forming a phase change layer in the first opening of the second dielectric layer such that a contact area between the phase change layer and the loop-shape electrode may be controlled to achieve desired contact, and forming a top electrode.
摘要翻译：提供了一种用于制造相变存储器的方法。该方法包括提供具有与一个或多个半导体器件连接的底部电极并在半导体衬底上形成第一电介质层的半导体衬底。该方法还包括在第一电介质层中形成环形电极，以及形成具有暴露第一电介质层的一部分和环形电极的一部分的第一开口的第二电介质层。此外，该方法包括在第二电介质层的第一开口中形成相变层，使得可以控制相变层和环形电极之间的接触面积以实现期望的接触，并形成顶部电极。

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