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    • 6. 发明授权
    • Liquid crystal display device and method for local dimming driving using spatial filter of the same
    • 用于使用其空间滤波器的局部调光驱动的液晶显示装置和方法
    • US08760385B2
    • 2014-06-24
    • US13178006
    • 2011-07-07
    • Kyung-Joon KwonDong-Woo KimHee-Won AhnJung-Hwan Lee
    • Kyung-Joon KwonDong-Woo KimHee-Won AhnJung-Hwan Lee
    • G09G3/36G09G3/34
    • G09G3/3426G09G2320/0646
    • A liquid crystal display device capable of improving a contrast ratio and of reducing a halo phenomenon with low power consumption and a method for local dimming driving the same are disclosed. A method for local dimming driving a liquid crystal display includes determining a local dimming value for each of light-emitting blocks based on analyzing input image data by the unit of light-emitting block provided in a backlight unit; determining a halo degree by analyzing a total light quantity of black pixels having black gradations in the input image data; adjusting the number of spatial filtering repetitions based on the determined halo degree; compensating the local dimming value by performing spatial filtering for the local dimming value an adjusted number of times; and controlling brightness of the backlight unit for each of the blocks by using the compensated local dimming value.
    • 公开了能够提高对比度和降低功耗低的光晕现象的液晶显示装置及其局部调光方法。 驱动液晶显示器的局部调光方法包括:基于设置在背光单元中的发光块单元分析输入图像数据,确定每个发光块的局部调光值; 通过分析输入图像数据中具有黑色渐变的黑色像素的总光量来确定光晕度; 基于确定的光晕度来调整空间滤波重复的数量; 通过对局部调光值进行调整次数的空间滤波来补偿局部调光值; 以及通过使用补偿的局部调光值来控制每个块的背光单元的亮度。
    • 8. 发明申请
    • Methods for manufacturing capacitors for semiconductor devices
    • 制造用于半导体器件的电容器的方法
    • US20070069271A1
    • 2007-03-29
    • US11605272
    • 2006-11-29
    • Dong-Woo KimJae-Hee Oh
    • Dong-Woo KimJae-Hee Oh
    • H01L27/108
    • H01L27/10855H01L27/10808H01L28/91
    • Capacitors for semiconductor devices and methods of fabricating such capacitors are provided The disclosed capacitor comprises an interlayer dielectric layer (ILD) pattern having an opening exposing a portion of the underlying semiconductor substrate, a silicide pattern formed on the exposed substrate, and a lower electrode covering an inner wall and bottom of the opening. A dielectric layer is formed on the lower electrode, and an upper electrode is disposed on the dielectric layer. The dielectric layer preferably comprises a high k-dielectric layer such as tantalum oxide. The disclosed method comprises forming an ILD pattern with an opening that exposes a portion of a semiconductor substrate forming an optional silicide pattern on the exposed substrate, forming a lower electrode on the inner wall of the opening and sequentially forming a dielectric layer and an upper electrode on the resulting structure.
    • 提供了用于半导体器件的电容器和制造这种电容器的方法。所公开的电容器包括具有暴露下面的半导体衬底的一部分的开口的层间电介质层(ILD)图案,形成在暴露的衬底上的硅化物图案,以及下电极覆盖 开口的内壁和底部。 电介质层形成在下电极上,上电极设置在电介质层上。 电介质层优选包括高k电介质层,例如氧化钽。 所公开的方法包括形成具有开口的ILD图案,所述开口使暴露的基板上形成任选的硅化物图案的半导体衬底的一部分暴露,在开口的内壁上形成下电极,并顺序地形成电介质层和上电极 在结果结构上。