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1. 发明申请

US20180175245A1 UV LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 审中-公开
公开(公告)号：US20180175245A1
公开(公告)日：2018-06-21
申请号：US15883774
申请日：2018-01-30
申请人： Seoul Viosys Co., Ltd.
发明人： Ki Yon Park , Jeong Hun Heo , Hwa Mok Kim , Gun Woo Han
IPC分类号： H01L33/32 , H01L33/00 , H01L33/06
CPC分类号： H01L33/32 , H01L33/007 , H01L33/06
摘要： Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.

2. 发明申请

US20170033263A1 UV LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：紫外线发光二极管及其制造方法
公开(公告)号：US20170033263A1
公开(公告)日：2017-02-02
申请号：US15294563
申请日：2016-10-14
申请人： Seoul Viosys Co., Ltd.
发明人： Ki Yon Park , Jeong Hun Heo , Hwa Mok Kim , Gun Woo Han
IPC分类号： H01L33/32 , H01L33/06 , H01L33/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/06
摘要： Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.
摘要翻译：示例性实施例提供了一种UV发光二极管及其制造方法。制造UV发光二极管的方法包括生长包括AlGaN的第一n型半导体层，其中第一n型半导体层的生长包括改变生长室内的生长压力并改变n型的流速掺杂剂源引入生长室。第一n型半导体层的生长期间的压力变化包括至少一个增压周期和随时间推移的压力降低周期，并且n型掺杂剂源的流量变化包括增加 n型掺杂剂源，其形式为至少一个脉冲。通过该方法制造的UV发光二极管具有优异的结晶度。

3. 发明授权

US09337175B2 Light emitting device and method of fabricating the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US09337175B2
公开(公告)日：2016-05-10
申请号：US14229773
申请日：2014-03-28
申请人： Seoul Viosys Co., Ltd.
发明人： Won Cheol Seo , Joon Hee Lee , Jong Kyun You , Chang Youn Kim , Jin Cheul Shin , Hwa Mok Kim , Jang Woo Lee , Yeo Jin Yoon , Jong Kyu Kim
IPC分类号： H01L25/075 , H01L27/15 , H01L33/62 , H01L33/00 , H01L33/46
CPC分类号： H01L33/60 , H01L25/0753 , H01L27/156 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
摘要： A light emitting device and a method of fabricating the same. The light emitting device includes a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells includes a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.
摘要翻译：发光器件及其制造方法。发光器件包括衬底。多个发光单元设置在基板的顶部上以彼此间隔开。每个发光单元包括第一上半导体层，有源层和第二下半导体层。反射金属层位于基板和发光单元之间。防止反射金属层暴露于外部。

4. 发明申请

US20160027964A1 UV LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：紫外线发光二极管及其制造方法
公开(公告)号：US20160027964A1
公开(公告)日：2016-01-28
申请号：US14810464
申请日：2015-07-27
申请人： Seoul Viosys Co., Ltd.
发明人： Ki Yon Park , Jeong Hun Heo , Hwa Mok Kim , Gun Woo Han
IPC分类号： H01L33/06 , H01L33/32 , H01L33/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/06
摘要： Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.
摘要翻译：示例性实施例提供了一种UV发光二极管及其制造方法。制造UV发光二极管的方法包括生长包括AlGaN的第一n型半导体层，其中第一n型半导体层的生长包括改变生长室内的生长压力并改变n型的流速掺杂剂源引入生长室。第一n型半导体层的生长期间的压力变化包括至少一个增压周期和随时间推移的压力降低周期，并且n型掺杂剂源的流量变化包括增加 n型掺杂剂源，其形式为至少一个脉冲。通过该方法制造的UV发光二极管具有优异的结晶度。

5. 发明申请

US20150295132A1 EPITAXIAL LAYER WAFER HAVING VOID FOR SEPARATING GROWTH SUBSTRATE THEREFROM AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME 审中-公开
标题翻译：具有用于分离其生长基底的异常层的波浪形波片和使用其制造的半导体器件
公开(公告)号：US20150295132A1
公开(公告)日：2015-10-15
申请号：US14726031
申请日：2015-05-29
申请人： SEOUL VIOSYS CO., LTD.
发明人： Jong Min JANG , Kyu Ho Lee , Chang Suk Han , Hwa Mok Kim , Daewoong Suh , Chi Hyun In , Jong Hyeon Chae
IPC分类号： H01L33/22 , H01L33/24 , H01L33/00 , H01L33/32
CPC分类号： H01L33/22 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L29/0657 , H01L33/0079 , H01L33/0095 , H01L33/20 , H01L33/24 , H01L33/32
摘要： An epitaxial wafer includes a growth substrate, a mask pattern disposed on the growth substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern and including a first void disposed on the masking region. The first void includes a lower void disposed between a lower surface of the epitaxial layer and the masking region, and an upper void extending from the lower void into the epitaxial layer, the lower void having a greater width than the upper void.
摘要翻译：外延晶片包括生长衬底，设置在生长衬底上并包括掩模区域和开口区域的掩模图案，以及覆盖掩模图案并且包括设置在掩蔽区域上的第一空隙的外延层。第一空隙包括设置在外延层的下表面和掩蔽区域之间的下部空隙和从下部空隙延伸到外延层中的上部空隙，下部空隙具有比上部空隙更大的宽度。

6. 发明申请

US20140151714A1 GALLIUM NITRIDE SUBSTRATE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：氮化铝基板及其制造方法
公开(公告)号：US20140151714A1
公开(公告)日：2014-06-05
申请号：US14096189
申请日：2013-12-04
申请人： SEOUL VIOSYS CO., LTD.
发明人： Ki Yon PARK , Hwa Mok Kim , Daewoong Suh , Young Hwan Son
IPC分类号： H01L33/32 , H01L33/12 , H01L33/00
CPC分类号： H01L21/0237 , C30B25/04 , C30B25/183 , C30B25/186 , C30B29/406 , H01L21/02381 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/02494 , H01L21/02505 , H01L21/0251 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/0075 , H01L33/12
摘要： Exemplary embodiments of the present invention relate to a single-crystal substrate including a buffer layer including a nitride semiconductor, holes penetrating the buffer layer, and a single-crystal nitride semiconductor disposed on the buffer layer.
摘要翻译：本发明的示例性实施例涉及包括包括氮化物半导体的缓冲层，穿过缓冲层的空穴和设置在缓冲层上的单晶氮化物半导体的单晶衬底。

7. 发明授权

US10323979B2 Ultraviolet measuring device, photodetector element, ultraviolet detector, ultraviolet index calculation device, and electronic device including same 有权
公开(公告)号：US10323979B2
公开(公告)日：2019-06-18
申请号：US15579080
申请日：2016-05-03
申请人： SEOUL VIOSYS CO., LTD.
发明人： Ki Yon Park , Choong Min Lee , Hwa Mok Kim , Soo Hyun Lee , Gun Woo Han
IPC分类号： G01J1/42 , H01L31/101 , G01J1/44 , G02B6/32 , G02B6/42 , G01R19/165 , G01R19/257 , H01L25/16 , H01L31/0203 , H01L31/024 , H01L27/144 , H01L31/0304 , H01L31/0392 , H01L31/108 , H01L23/60 , H01L31/02
摘要： Disclosed are an ultraviolet measuring device, a photodetector, an ultraviolet detector, an ultraviolet index calculation device, and an electronic device or portable terminal including the same. In one aspect, an ultraviolet measuring is provided to comprise: a substrate on which an electrode is formed; a readout integrated circuit (ROTC) unit electrically connected with the electrode; and an aluminum gallium nitride (AlGaN) based UVB sensor electrically connected with the readout integrated circuit unit and formed on an insulating substrate, wherein the read-out integrated circuit converts a photocurrent input from the UV sensor into a digital signal including UV data.

8. 发明授权

US09905732B2 UV light emitting diode and method of fabricating the same 有权
公开(公告)号：US09905732B2
公开(公告)日：2018-02-27
申请号：US15294563
申请日：2016-10-14
申请人： Seoul Viosys Co., Ltd.
发明人： Ki Yon Park , Jeong Hun Heo , Hwa Mok Kim , Gun Woo Han
IPC分类号： H01L33/00 , H01L33/06 , H01L33/32
CPC分类号： H01L33/32 , H01L33/007 , H01L33/06
摘要： Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.

9. 发明授权

US09812602B2 Light detection device 有权
公开(公告)号：US09812602B2
公开(公告)日：2017-11-07
申请号：US14860653
申请日：2015-09-21
申请人： Seoul Viosys Co., Ltd.
发明人： Ki Yon Park , Hwa Mok Kim , Young Hwan Son , Daewoong Suh
IPC分类号： H01L29/15 , H01L31/102 , H01L27/146 , H01L31/108 , H01L31/0304 , H01L31/0224 , H01L31/18 , H01L31/101
CPC分类号： H01L31/108 , H01L31/0224 , H01L31/022408 , H01L31/022475 , H01L31/03048 , H01L31/1013 , H01L31/109 , H01L31/1848 , Y02E10/544
摘要： A light detection device includes a substrate, a buffer layer disposed on the substrate, a first band gap change layer disposed on a portion of the buffer layer, a light absorption layer disposed on the first band gap change layer, a Schottky layer disposed on a portion of the light absorption layer, and a first electrode layer disposed on a portion of the Schottky layer.

10. 发明授权

US09786805B2 Semiconductor ultraviolet (UV)photo-detecting device 有权
公开(公告)号：US09786805B2
公开(公告)日：2017-10-10
申请号：US15168159
申请日：2016-05-30
申请人： SEOUL VIOSYS CO., LTD.
发明人： Ki Yon Park , Hwa Mok Kim , Kyu Ho Lee , Sung Hyun Lee , Hyung Kyu Kim
IPC分类号： H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L31/09 , H01L31/108 , H01L31/0304 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/09 , H01L31/022408 , H01L31/03044 , H01L31/03048 , H01L31/108 , H01L31/1848 , H01L31/1852 , H01L31/1856 , Y02E10/544
摘要： An ultraviolet (UV) photo-detecting device, including: a substrate; a first nitride layer disposed on the substrate; a second nitride layer disposed between the first nitride layer and the substrate; a light absorption layer disposed on the first nitride layer; and a Schottky junction layer disposed on the light absorption layer.

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