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    • 2. 发明申请
    • Light-emitting devices and displays with improved performance
    • 具有改进性能的发光装置和显示器
    • US20090278141A1
    • 2009-11-12
    • US12313779
    • 2008-11-24
    • Seth Coe-SullivanDorai RamprasadIoannis KymissisVladimir BulovicMarshall CoxCaroline J. RoushPeter T. KazlasJonathan S. Steckel
    • Seth Coe-SullivanDorai RamprasadIoannis KymissisVladimir BulovicMarshall CoxCaroline J. RoushPeter T. KazlasJonathan S. Steckel
    • H01L33/00
    • H01L33/06B82Y20/00B82Y30/00C09K11/02C09K11/565C09K11/883H01L27/156H01L33/0029H01L33/28H01L51/5012H01L51/502H05B33/145
    • Light-emitting devices and displays with improved performance are disclosed. A light-emitting device includes an emissive material disposed between a first electrode, and a second electrode. Various embodiments include a device having a peak external quantum efficiency of at least about 2.2%; a device that emits light having a CIE color coordinate of x greater than 0.63; a device having an external quantum efficiency of at least about 2.2 percent when measured at a current density of 5 mA/cm2. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a peak luminescent efficiency of at least about 1.5 lumens per watt. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a luminescent efficiency of at least about 1.5 lumens per watt when measured at a current density of 5 milliamps/square centimeter. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has a peak external quantum efficiency of at least about 1.1 percent. Further disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals, wherein the device has a luminescent efficiency of at least about 3 lumens per watt when measured at a current density of 5 mA/cm2. Further disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has an external quantum efficiency of at least about 2% when measured at a current density of 5 mA/cm2. Other light-emitting devices and displays with improved performance are disclosed. Also disclosed are methods for preparing and for purifying semiconductor nanocrystals.
    • 公开了具有改进性能的发光装置和显示器。 发光装置包括设置在第一电极和第二电极之间的发光材料。 各种实施方案包括具有至少约2.2%的峰值外部量子效率的器件; 发射具有x大于0.63的CIE色坐标的光的装置; 当以5mA / cm 2的电流密度测量时,具有至少约2.2%的外部量子效率的器件。 还公开了包括能够在激发时发射红光的多个半导体纳米晶体的发光器件,其中该器件具有至少约1.5流明/瓦特的峰值发光效率。 还公开了一种发光器件,其包括能够在激发时发射红光的多个半导体纳米晶体,其中当以5毫安/平方厘米的电流密度测量时,该器件具有至少约1.5流明/瓦特的发光效率。 还公开了一种发光器件,其包括在激发时能够发射绿光的多个半导体纳米晶体,其中该器件具有至少约1.1%的峰值外部量子效率。 还公开了包括多个半导体纳米晶体的发光器件,其中当以5mA / cm 2的电流密度测量时,该器件具有至少约3流明/瓦的发光效率。 进一步公开的是一种发光器件,其包括能够在激发时发出绿光的多个半导体纳米晶体,其中当以5mA / cm 2的电流密度测量时,该器件具有至少约2%的外部量子效率。 公开了其他具有改进性能的发光装置和显示器。 还公开了制备和纯化半导体纳米晶体的方法。
    • 3. 发明申请
    • Light emitting devices and displays with improved performance
    • 具有改进性能的发光器件和显示器
    • US20100051901A1
    • 2010-03-04
    • US12454705
    • 2009-05-21
    • Peter T. KazlasMarshall CoxSeth Coe-SullivanDorai RamprasadJonathan S. SteckelCraig BreenCaroline J. RoushMead Misic
    • Peter T. KazlasMarshall CoxSeth Coe-SullivanDorai RamprasadJonathan S. SteckelCraig BreenCaroline J. RoushMead Misic
    • H01L33/00
    • C09K11/565B82Y20/00B82Y30/00H01L51/5012H05B33/14
    • Light emitting devices and devices with improved performance are disclosed. In one embodiment, a light emitting device includes an emissive material disposed between a first electrode, and a second electrode, wherein the emissive material comprises semiconductor nanocrystals capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation, wherein the light emitting device can have a peak external quantum efficiency of at least about 1.0 percent. Also disclosed is a display including at least one light emitting device including an emissive material disposed between a first electrode, and a second electrode, wherein the at least one light emitting device can have a peak external quantum efficiency of at least about 1.0 percent. In another embodiment, a light emitting device includes an emissive material disposed between a first electrode and a second electrode. The emissive material comprises semiconductor nanocrystals capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation. The device further includes a first spacer material disposed between the emissive material and the first electrode. In certain embodiments, the device further includes a first material capable of transporting charge disposed between the emissive material and the first electrode, wherein the first spacer material is disposed between the emissive material and the first electrode. In certain embodiments, for example, light emitting devices can have a maximum peak emission in a range from about 380 nm to about 500 nm. In certain embodiments, the light emitting device can have a maximum peak emission peak in the range from about 450 nm to about 490 nm. Displays including light emitting devices are also disclosed.
    • 公开了具有改进性能的发光器件和器件。 在一个实施例中,发光器件包括设置在第一电极和第二电极之间的发光材料,其中发射材料包含能够发射包括在激发的光谱的蓝色区域中的最大峰值发射的光的半导体纳米晶体,其中 发光器件可以具有至少约1.0%的峰值外部量子效率。 还公开了一种显示器,其包括至少一个包括设置在第一电极和第二电极之间的发光材料的发光器件,其中所述至少一个发光器件可以具有至少约1.0%的峰值外部量子效率。 在另一个实施例中,发光器件包括设置在第一电极和第二电极之间的发光材料。 发射材料包括能够发射光的半导体纳米晶体,其包括在激发时在光谱的蓝色区域中的最大峰值发射。 该装置还包括设置在发光材料和第一电极之间的第一间隔物材料。 在某些实施例中,该装置还包括能够传输设置在发射材料和第一电极之间的电荷的第一材料,其中第一间隔物材料设置在发光材料和第一电极之间。 在某些实施例中,例如,发光器件可以具有在约380nm至约500nm范围内的最大峰值发射。 在某些实施方案中,发光器件可具有在约450nm至约490nm范围内的最大峰值发射峰值。 还公开了包括发光器件的显示器。