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    • 8. 发明授权
    • Nonvolatile memory device
    • 非易失性存储器件
    • US07525148B2
    • 2009-04-28
    • US11228696
    • 2005-09-16
    • Young-Joon KimDae-Woong KimMin Kim
    • Young-Joon KimDae-Woong KimMin Kim
    • H01L29/76
    • H01L27/115H01L27/11521
    • A nonvolatile memory device and a method of manufacturing the same are provided. An insulation layer having a high etching rate as compared with a pad oxide layer is formed as a buffer layer between a first STI film formed as a lower part of semiconductor substrate and a second STI film formed as an upper part of the semiconductor substrate, to obtain a pillar CD for an SAP structure. The buffer layer is etched more speedily in comparison with the pad oxide layer in a procedure of etching the pad oxide layer, thus ensuring a sufficient pillar CD without an excessive wet etch-back. Accordingly, a defect occurrence such as a grooving or seam can be prevented in realizing the SAP structure, and a tunnel oxide layer can be formed with uniform thickness.
    • 提供了一种非易失性存储器件及其制造方法。 形成与衬垫氧化物层相比具有高蚀刻速率的绝缘层作为形成为半导体衬底的下部的第一STI膜和形成为半导体衬底的上部的第二STI膜之间的缓冲层形成为 获得SAP结构的支柱CD。 在蚀刻衬垫氧化物层的过程中,与衬垫氧化物层相比,缓冲层被更快速地蚀刻,从而确保了足够的支柱CD而没有过多的湿回蚀。 因此,在实现SAP结构时,可以防止诸如切槽或接缝的缺陷发生,并且可以形成具有均匀厚度的隧道氧化物层。