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    • 4. 发明授权
    • High operating temperature resonant tunnelling quantum well photodetector
    • 高工作谐振隧道量子阱光电探测器
    • US09349889B2
    • 2016-05-24
    • US14437867
    • 2013-10-23
    • Sharp Kabushiki Kaisha
    • Samir Rihani
    • H01L31/0352H01L27/146H01L31/102
    • H01L31/035236H01L27/14649H01L27/14652H01L31/0352H01L31/035209H01L31/102
    • An semiconductor structure comprises a first quantum well having a first state (E3) with an energy that is greater than an energy of a lower state (E1) by a first energy difference, a quantum well structure (100) adjacent to the first quantum well and having at least a second state (E4) having an energy level which is resonant with the first state (E3) of the first quantum well, a second quantum well having at least a third state (E2) to collect electrons from the second state (E4) of the quantum well structure through a non-radiative mechanism and a fourth state (E5). An energy of the fourth state of the second quantum well is greater than an energy of the third state (E2) by a second energy difference. The structure can absorb two photons, one in the first quantum well by excitation of a carrier from the lower energy state (E1) to the first state (E3) and another in the second quantum well by excitation of a carrier from the third state (E2) to the fourth state (E5). The quantum well structure provides efficient extraction of excited carriers from the first quantum well.
    • 半导体结构包括具有第一状态(E3)的第一量子阱,其具有大于第一能量差的较低状态(E1)的能量的能量,与第一量子阱相邻的量子阱结构(100) 并且具有至少第二状态(E4),其具有与第一量子阱的第一状态(E3)共振的能级,具有至少第三状态(E2)的第二量子阱用于从第二状态收集电子 (E4),通过非辐射机制和第四状态(E5)。 第二量子阱的第四状态的能量大于第三状态(E2)的能量第二能量差。 该结构可以通过从第三状态激发载流子而将载流子从较低能态(E1)激发到第一状态(E3),另一个在第二量子阱中吸收两个光子,一个在第一量子阱中, E2)到第四状态(E5)。 量子阱结构提供从第一量子阱有效提取激发载流子。
    • 5. 发明申请
    • HIGH OPERATING TEMPERATURE RESONANT TUNNELLING QUANTUM WELL PHOTODETECTOR
    • 高操作温度共振隧道量子阱光电转换器
    • US20150280035A1
    • 2015-10-01
    • US14437867
    • 2013-10-23
    • SHARP KABUSHIKI KAISHA
    • Samir Rihani
    • H01L31/0352H01L27/146
    • H01L31/035236H01L27/14649H01L27/14652H01L31/0352H01L31/035209H01L31/102
    • An semiconductor structure comprises a first quantum well having a first state (E3) with an energy that is greater than an energy of a lower state (E1) by a first energy difference, a quantum well structure (100) adjacent to the first quantum well and having at least a second state (E4) having an energy level which is resonant with the first state (E3) of the first quantum well, a second quantum well having at least a third state (E2) to collect electrons from the second state (E4) of the quantum well structure through a non-radiative mechanism and a fourth state (E5). An energy of the fourth state of the second quantum well is greater than an energy of the third state (E2) by a second energy difference. The structure can absorb two photons, one in the first quantum well by excitation of a carrier from the lower energy state (E1) to the first state (E3) and another in the second quantum well by excitation of a carrier from the third state (E2) to the fourth state (E5). The quantum well structure provides efficient extraction of excited carriers from the first quantum well.
    • 半导体结构包括具有第一状态(E3)的第一量子阱,其具有大于第一能量差的较低状态(E1)的能量的能量,与第一量子阱相邻的量子阱结构(100) 并且具有至少第二状态(E4),其具有与第一量子阱的第一状态(E3)共振的能级,具有至少第三状态(E2)的第二量子阱用于从第二状态收集电子 (E4),通过非辐射机制和第四状态(E5)。 第二量子阱的第四状态的能量大于第三状态(E2)的能量第二能量差。 该结构可以通过从第三状态激发载流子而将载流子从较低能态(E1)激发到第一状态(E3),另一个在第二量子阱中吸收两个光子,一个在第一量子阱中, E2)到第四状态(E5)。 量子阱结构提供从第一量子阱有效提取激发载流子。
    • 8. 发明申请
    • HIGHLY EFFICIENT PHOTOVOLTAIC ENERGY HARVESTING DEVICE
    • 高效照明能源采集设备
    • US20150280025A1
    • 2015-10-01
    • US14242250
    • 2014-04-01
    • SHARP KABUSHIKI KAISHA
    • Mathieu BellangerStephen DayMatthias KauerSamir Rihani
    • H01L31/0224H01L31/0735H02S40/22H01L31/0216H01L31/054
    • H01L31/022433H01L31/02168H01L31/0543H01L31/0693H01L31/0735H02S40/22Y02E10/52Y02E10/544
    • A photovoltaic energy harvesting (PVEH) device comprises a single-junction photovoltaic cell. The photovoltaic cell includes a light converting element made of a wide band-gap III-V active material spectrally matched to an ambient light source, a light receiving side that is free from front metal contact gridlines, and at least one discrete metal contact element placed on the light receiving side that realizes power extraction. The active material of the light converting element may be made of (Al)GaInP compounds. The active material of the light converting element may be spectrally matched to ambient light in the form of at least one of an artificial light source and natural sunlight, and combinations thereof. The PVEH device may have a plurality of photovoltaic cells inter-connected in series to achieve a higher open-circuit voltage. A total fractional power loss due to series resistance, shunt resistance and contact shading is less than 20%.
    • 光伏能量收集(PVEH)装置包括单结光伏电池。 光伏电池包括由与环境光源光谱匹配的宽带隙III-V活性材料制成的光转换元件,不具有前金属接触网格线的光接收侧和至少一个分立的金属接触元件 在实现功率提取的光接收侧。 光转换元件的活性材料可以由(Al)GaInP化合物制成。 光转换元件的活性材料可以与人造光源和自然阳光中的至少一种的形式的环境光以及它们的组合进行光谱匹配。 PVEH器件可以具有串联连接的多个光伏电池,以实现更高的开路电压。 串联电阻,分流电阻和触点阴影引起的总分功率损耗小于20%。