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1. 发明授权

US09947699B2 Manufacturing method of dual gate oxide semiconductor TFT substrate and substrate thereof 有权
公开(公告)号：US09947699B2
公开(公告)日：2018-04-17
申请号：US15650972
申请日：2017-07-16
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Shimin Ge , Hejing Zhang , Chihyuan Tseng , Chihyu Su , Wenhui Li , Longqiang Shi , Xiaowen Lv
IPC分类号： H01L21/44 , H01L29/786 , H01L27/12 , H01L29/49 , H01L29/24 , H01L21/02 , H01L27/32
CPC分类号： H01L27/1288 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L27/127 , H01L27/3262 , H01L29/24 , H01L29/4908 , H01L29/78648 , H01L29/7869
摘要： A method for manufacturing a dual gate oxide semiconductor TFT substrate utilizes a halftone mask to implement a photo process, which not only accomplishes patterning to an oxide semiconductor layer but also obtains an oxide conductor layer with ion doping. The method implements patterning to a bottom gate isolation layer and a top gate isolation layer at the same time with one photolithographic process. The method implements patterning to second and third metal layers at the same time to obtain a first source, a first drain, a second source, a second drain, a first top gate and a second top gate with one photolithographic process. The method implements patterning to a second flat layer, a passivation layer and a top gate isolation layer at the same time with one photolithographic process. The number of photolithographic processes involved is reduced to nine so as to simplify the manufacturing process.

2. 发明授权

US09768202B2 TFT backplate structure comprising transistors having gate isolation layers of different thicknesses and manufacture method thereof 有权
公开(公告)号：US09768202B2
公开(公告)日：2017-09-19
申请号：US14426155
申请日：2014-09-19
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Xiaowen Lv , Chihyuan Tseng , Chihyu Su , Hejing Zhang
IPC分类号： H01L27/12 , H01L29/78 , H01L21/16 , H01L21/00 , H01L29/24 , H01L21/47 , H01L29/786 , H01L21/77
CPC分类号： H01L27/1251 , H01L21/77 , H01L27/12 , H01L27/1225 , H01L27/1237 , H01L27/1288 , H01L29/7869
摘要： The present invention provides a TFT backplate structure and a manufacture method thereof. The TFT backplate structure comprises a switch TFT (T1) and a drive TFT (T2). The switch TFT (T1) is constructed by a first source/a first drain (61), a first gate (21), and a first etching stopper layer (51), a first oxide semiconductor layer (41), a first gate isolation layer (31) sandwiched in between. The drive TFT (T2) is constructed by a second source/a second drain (62), a second gate (22), and a second oxide semiconductor layer (42), a first etching stopper layer (51), a second gate isolation layer (32) sandwiched in between. The electrical properties of the switch TFT (T1) and the drive TFT (T2) are different. The switch TFT has smaller subthreshold swing to achieve fast charge and discharge, and the drive TFT has relatively larger subthreshold swing for controlling the current and the grey scale more precisely.

3. 发明申请

US20160351723A1 CO-PLANAR OXIDE SEMICONDUCTOR TFT SUBSTRATE STRUCTURE AND MANUFACTURE METHOD THEREOF 有权
标题翻译： CO-PLANAL OXIDE SEMICONDUCTOR TFT基板结构及其制造方法
公开(公告)号：US20160351723A1
公开(公告)日：2016-12-01
申请号：US14771204
申请日：2015-06-18
申请人： Shenzhen China Star Optoelectronics Technology Co. Ltd.
发明人： Xiaowen Lv , Chihyuan Tseng
IPC分类号： H01L29/786 , H01L29/66 , H01L29/417 , H01L27/12
CPC分类号： H01L29/78696 , H01L21/44 , H01L27/124 , H01L27/1248 , H01L29/41733 , H01L29/66969 , H01L29/78609 , H01L29/7869
摘要： The present invention provides a co-planar oxide semiconductor TFT substrate structure and a manufacture method thereof. In the co-planar oxide semiconductor TFT substrate structure, the active layer comprises a main body and a plurality of short channels connected to the main body, and the plurality of short channels are separated with the plurality of strip metal electrodes to make the active layer possess higher mobility and lower leak current. Thus, the performance of the TFT element can be improved. The present invention provides a manufacture method of a co-planar oxide semiconductor TFT substrate structure. With forming the plurality of strip metal electrodes between the source and the drain, which are separately positioned, as deposing the oxide semiconductor layer, the plurality of short channels can be formed between the source and the drain. The method is simple and does not require additional mask or process to obtain the active layer structure different from prior art. The manufactured actively layer possesses higher mobility and lower leak current. Thus, the performance of the TFT element can be improved.
摘要翻译：本发明提供一种共面氧化物半导体TFT基板结构及其制造方法。在共面氧化物半导体TFT基板结构中，有源层包括主体和连接到主体的多个短沟道，并且多个短沟道与多个带状金属电极分离，以使活性层具有较高的流动性和较低的泄漏电流。因此，可以提高TFT元件的性能。本发明提供一种共面氧化物半导体TFT基板结构的制造方法。通过在分离定位的源极和漏极之间形成多个带状金属电极，作为去除氧化物半导体层，可以在源极和漏极之间形成多个短沟道。该方法简单，并且不需要额外的掩模或工艺来获得与现有技术不同的有源层结构。制作的活性层具有较高的迁移率和较低的漏电流。因此，可以提高TFT元件的性能。

4. 发明申请

US20140203274A1 TFT STRUCTURE, LCD DEVICE, AND METHOD FOR MANUFACTURING TFT 有权
标题翻译： TFT结构，LCD装置以及制造TFT的方法
公开(公告)号：US20140203274A1
公开(公告)日：2014-07-24
申请号：US13824341
申请日：2013-02-27
申请人： SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Chihyuan Tseng
IPC分类号： G02F1/1368 , H01L29/66 , H01L29/786
CPC分类号： G02F1/1368 , H01L29/42384 , H01L29/66969 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： A thin film transistor (TFT) structure includes a first metal layer. The first metal layer is configured with an insulating layer, a second metal layer covers a surface of the insulating layer, an area of the second metal layer that corresponds to an area above the first metal layer is configured with a gap. An area of the insulating layer that corresponds to the gap is configured with a groove. An active layer made of an indium gallium zinc oxide (IGZO) covers surfaces of the second metal layer, the gap, and the groove.
摘要翻译：薄膜晶体管（TFT）结构包括第一金属层。第一金属层由绝缘层构成，第二金属层覆盖绝缘层的表面，与第一金属层上方的区域相对应的第二金属层的区域构成间隙。与间隙对应的绝缘层的区域配置有槽。由铟镓锌氧化物（IGZO）制成的有源层覆盖第二金属层，间隙和沟槽的表面。

5. 发明授权

US10109659B2 TFT backplate structure comprising transistors having gate isolation layers of different thicknesses and manufacture method thereof 有权
公开(公告)号：US10109659B2
公开(公告)日：2018-10-23
申请号：US15644754
申请日：2017-07-08
申请人： Shenzhen China Star Optoelectronics Technology Co. Ltd.
发明人： Xiaowen Lv , Chihyuan Tseng , Chihyu Su , Hejing Zhang
IPC分类号： H01L27/12 , H01L29/78 , H01L21/16 , H01L21/00 , H01L29/24 , H01L21/47 , H01L21/02 , H01L31/07 , H01L29/786 , H01L21/77
摘要： A includes a switch TFT and a drive TFT. The switch TFT is formed of a first source and a first drain, a first gate, and a first etching stopper layer, and a first oxide semiconductor layer and first gate isolation layer sandwiched therebetween. The drive TFT is formed of a second source and a second drain, a second gate, and a second oxide semiconductor layer, and a first etching stopper layer and a second gate isolation layer sandwiched therebetween. The electrical properties of the switch TFT and the drive TFT are different. The switch TFT has a smaller subthreshold swing to achieve fast charge and discharge, and the drive TFT has a relatively larger subthreshold swing for controlling a current and a grey scale more precisely.

6. 发明授权

US10043829B2 TFT backplate structure and manufacture method thereof 有权
公开(公告)号：US10043829B2
公开(公告)日：2018-08-07
申请号：US15655039
申请日：2017-07-20
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Xiaowen Lv , Chihyuan Tseng , Chihyu Su , Hejing Zhang
IPC分类号： H01L21/77 , H01L27/12 , H01L29/786 , H01L27/32 , H01L29/423
摘要： A method is provided for manufacturing a thin film transistor (TFT) backplate that includes a switch TFT and a drive TFT. The method is conducted such that each of the switch TFT and the drive TFT manufactured therewith includes a source electrode/a drain electrode and a gate electrode, and also includes an etching stopper layer, a semiconductor layer, and gate isolation layer that are disposed between the source electrode/the drain electrode and the gate electrode to form a TFT structure. The gate isolation layers of the switch TFT and drive TFT are formed of different materials, such as SiOx and Al2O3, or SiOx and SiNx, or Al2O3 and a mixture of SiNx and SiOx, such that electrical properties of the switch TFT and the drive TFT are made different.

7. 发明授权

US09922995B2 Structure of dual gate oxide semiconductor TFT substrate including TFT having top and bottom gates 有权
公开(公告)号：US09922995B2
公开(公告)日：2018-03-20
申请号：US15390734
申请日：2016-12-27
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Shimin Ge , Hejing Zhang , Chihyuan Tseng , Chihyu Su , Wenhui Li , Longqiang Shi , Xiaowen Lv
IPC分类号： H01L27/12 , H01L29/786 , H01L29/24 , H01L29/66 , H01L21/02 , H01L29/51 , H01L29/49 , H01L29/45 , G02F1/1368
CPC分类号： H01L27/1225 , G02F1/13439 , G02F1/1368 , G02F2001/133302 , G02F2201/123 , H01L21/02565 , H01L27/124 , H01L27/127 , H01L27/1288 , H01L27/3262 , H01L29/24 , H01L29/45 , H01L29/4908 , H01L29/518 , H01L29/66969 , H01L29/78618 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate oxide semiconductor TFT substrate utilizes the halftone mask to implement one photo process, which cannot only accomplish the patterning to the oxide semiconductor layer but also obtain the oxide conductor layer (52′) with ion doping process, and the oxide conductor layer (52′) is employed as being the pixel electrode of the LCD to replace the ITO pixel electrode in prior art; the method manufactures the source (81), the drain (82) and the top gate (71) at the same time with one photo process; the method implements patterning process to the passivation layer (8) and the top gate isolation layer (32) together with one photo process, to reduce the number of the photo processes to nine for shortening the manufacture procedure, raising the production efficiency and lowering the production cost.

8. 发明授权

US09570620B2 Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof 有权
标题翻译：双栅氧化半导体TFT基板的制造方法及其结构
公开(公告)号：US09570620B2
公开(公告)日：2017-02-14
申请号：US14763824
申请日：2015-05-21
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Shimin Ge , Hejing Zhang , Chihyuan Tseng , Chihyu Su , Wenhui Li , Longqiang Shi , Xiaowen Lv
IPC分类号： H01L21/00 , H01L29/786 , H01L29/24 , H01L29/49 , H01L27/12 , G02F1/1343 , G02F1/1368 , G02F1/1333
CPC分类号： H01L27/1225 , G02F1/13439 , G02F1/1368 , G02F2001/133302 , G02F2201/123 , H01L21/02565 , H01L27/124 , H01L27/127 , H01L27/1288 , H01L27/3262 , H01L29/24 , H01L29/45 , H01L29/4908 , H01L29/518 , H01L29/66969 , H01L29/78618 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate oxide semiconductor TFT substrate utilizes the halftone mask to implement one photo process, which cannot only accomplish the patterning to the oxide semiconductor layer but also obtain the oxide conductor layer (52′) with ion doping process, and the oxide conductor layer (52′) is employed as being the pixel electrode of the LCD to replace the ITO pixel electrode in prior art; the method manufactures the source (81), the drain (82) and the top gate (71) at the same time with one photo process; the method implements patterning process to the passivation layer (8) and the top gate isolation layer (32) together with one photo process, to reduce the number of the photo processes to nine for shortening the manufacture procedure, raising the production efficiency and lowering the production cost.
摘要翻译：本发明提供氧化物半导体TFT基板的制造方法及其结构。双栅极氧化物半导体TFT基板的制造方法利用半色调掩模来实现一种光刻工艺，其不仅可以实现对氧化物半导体层的图案化，而且还可以通过离子掺杂工艺获得氧化物导体层（52'），并且氧化物导体层（52'）用作LCD的像素电极以替代现有技术中的ITO像素电极; 该方法通过一次照相处理同时制造源（81），漏极（82）和顶栅（71）; 该方法与一个照相工艺一起对钝化层（8）和顶栅隔离层（32）进行图案化处理，以将照片处理次数减少到九个，以缩短制造程序，提高生产效率并降低生产成本。

9. 发明申请

US20160307932A1 MANUFACTURE METHOD OF DUAL GATE OXIDE SEMICONDUCTOR TFT SUBSTRATE AND STRUCTURE THEREOF 有权
标题翻译：双栅氧化半导体TFT基板的制造方法及其结构
公开(公告)号：US20160307932A1
公开(公告)日：2016-10-20
申请号：US14763822
申请日：2015-05-21
申请人： Shenzhen China Star Optoelectronics Technology Co. Ltd.
发明人： Shimin Ge , Hejing Zhang , Chihyuan Tseng , Chihyu Su , Wenhui Li , Longqiang Shi , Xiaowen Lv
IPC分类号： H01L27/12 , H01L29/786 , H01L21/027 , H01L21/467 , H01L51/52 , H01L29/24 , H01L29/45 , H01L29/51 , H01L29/49 , H01L29/66 , H01L21/02
CPC分类号： H01L29/7869 , H01L21/02565 , H01L21/02631 , H01L21/0274 , H01L21/467 , H01L21/47635 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L27/1288 , H01L27/3248 , H01L27/3262 , H01L29/24 , H01L29/45 , H01L29/4908 , H01L29/495 , H01L29/518 , H01L29/66969 , H01L29/78618 , H01L29/78648 , H01L29/78696 , H01L51/5206 , H01L2227/323
摘要： The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate oxide semiconductor TFT substrate utilizes the halftone mask to implement one photo process, which cannot only accomplish the patterning to the oxide semiconductor layer but also obtain the oxide conductor layer (53′) with ion doping process; the method implements the patterning process to the bottom gate isolation layer (31) and the top gate isolation layer (32) at the same time with one photo process; the method manufactures the first top gate (71), the first source (81), the first drain (82), the second top gate (72), the second source (83), the second drain (84) at the same time with one photo process; the method implements patterning process to the flat layer (9), the passivation layer (8) and the top gate isolation layer (32) at the same time with one photo process, to reduce the number of the photo processes to five for shortening the manufacture procedure, raising the production efficiency and lowering the production cost.
摘要翻译：本发明提供氧化物半导体TFT基板的制造方法及其结构。双栅极氧化物半导体TFT基板的制造方法利用半色调掩模来实现一个光刻工艺，其不仅可以实现对氧化物半导体层的图案化，而且还可以通过离子掺杂工艺获得氧化物导体层（53'）; 该方法通过一次照相处理同时对底栅隔离层（31）和顶栅隔离层（32）进行图案化处理; 该方法同时制造第一顶栅（71），第一源（81），第一漏极（82），第二顶栅极（72），第二源极（83），第二漏极（84）一个照片过程; 该方法通过一次照相处理同时对平坦层（9），钝化层（8）和顶栅隔离层（32）进行图案化处理，以将照片处理的数量减少到五个，以缩短制造程序，提高生产效率，降低生产成本。

10. 发明授权

US09401418B2 Method of manufacturing thin film transistor and organic light emitting diode display 有权
标题翻译：制造薄膜晶体管和有机发光二极管显示器的方法
公开(公告)号：US09401418B2
公开(公告)日：2016-07-26
申请号：US14366866
申请日：2014-04-28
申请人： SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Xiaowen Lv , Chihyuan Tseng
IPC分类号： H01L29/66 , H01L27/32 , H01L21/02 , H01L21/311 , H01L29/786 , H01L21/027
CPC分类号： H01L29/66969 , H01L21/0206 , H01L21/0274 , H01L21/31144 , H01L27/1288 , H01L27/3244 , H01L29/7869
摘要： A method of manufacturing transistor having a first and second thin film transistor by creating the second thin film transistor by forming a second gate of the second thin film transistor on a substrate, depositing an insulating layer and a semiconductor layer in order to cover the second gate. A photoresist layer is deposited above the semiconductor layer and exposed. The semiconductor layer and the insulating layer are etched, thereby forming a second active layer of the second thin film transistor and a first connection window disposed above the second gate. A second source and a second drain of the second thin film transistor is deposited above the insulating layer and the second active layer. The present method enables the manufacturing of an organic light emitting diode display. The method reduces the times of using a photomask, thereby saving the manufacture time, improving the productivity and economizing the manufacture cost.
摘要翻译：一种制造具有第一和第二薄膜晶体管的晶体管的方法，其通过在衬底上形成第二薄膜晶体管的第二栅极来形成第二薄膜晶体管，沉积绝缘层和半导体层以覆盖第二栅极。在半导体层上沉积光致抗蚀剂层并暴露。蚀刻半导体层和绝缘层，从而形成第二薄膜晶体管的第二有源层和设置在第二栅极上方的第一连接窗口。第二薄膜晶体管的第二源极和第二漏极沉积在绝缘层和第二有源层上方。本方法能够制造有机发光二极管显示器。该方法减少了使用光掩模的时间，从而节省制造时间，提高生产率并节省制造成本。

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