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1. 发明授权

US10157970B2 Thin-film transistor array substrate for AMOLED and manufacturing method thereof 有权
公开(公告)号：US10157970B2
公开(公告)日：2018-12-18
申请号：US15320893
申请日：2016-02-25
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Hejing Zhang
IPC分类号： H01L27/32 , H01L27/12 , G09G3/20 , G09G3/3233
摘要： A thin-film transistor array substrate for AMOLED and a manufacturing method thereof are disclosed. The thin-film transistor array substrate includes: a substrate; a plurality of thin-film transistor pixel units mounted on the substrate, each of which includes at least one driving thin-film transistor and at least one switching thin-film transistor; a first electrode pattern layer mounted on the substrate; an insulating layer mounted on the substrate and covering gates of the driving thin-film transistor and the switching thin-film transistor and the first electrode pattern layer; and a second electrode pattern layer mounted on the insulating layer and partially overlapped with the first electrode pattern layer to have an overlapping area and a non-overlapping area; the insulating layer has a larger thickness in the overlapping area and has a smaller thickness in the non-overlapping area.

2. 发明授权

US09728560B2 TFT substrate structure 有权
公开(公告)号：US09728560B2
公开(公告)日：2017-08-08
申请号：US15393690
申请日：2016-12-29
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Hejing Zhang , Chihyuan Tseng , Chihyu Su , Wenhui Li , Longqiang Shi , Xiaowen Lv
IPC分类号： H01L27/12 , H01L27/32 , H01L29/786
CPC分类号： H01L27/1225 , H01L27/1222 , H01L27/1229 , H01L27/124 , H01L27/1251 , H01L27/3262 , H01L29/78663 , H01L29/78669 , H01L29/78672 , H01L29/78678 , H01L29/7869
摘要： The present invention provides a TFT substrate structure, comprising a Switching TFT and a Driving TFT, and the Switching TFT comprises a first active layer, and the Driving TFT comprises a second active layer, and the first active layer and the second active layer are made by the same or different materials and the electrical properties of the Switching TFT and the Driving TFT are different. According to the different functions of the different TFTs, the present invention employs different working structures for the Switching TFT and the Driving TFT to respectively implement deposition and photolithography, and employs different materials for the active layers of the Switching TFT and the Driving TFT to differentiate the electrical properties of different TFTs in the TFT substrate. Accordingly, the accurate control to the OLED with lowest cost can be realized.

3. 发明授权

US09704887B2 TFT substrate structure 有权
公开(公告)号：US09704887B2
公开(公告)日：2017-07-11
申请号：US15394424
申请日：2016-12-29
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Hejing Zhang , Chihyuan Tseng , Chihyu Su , Wenhui Li , Longqiang Shi , Xiaowen Lv
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L27/1225 , H01L27/1222 , H01L27/1229 , H01L27/124 , H01L27/1251 , H01L27/3262 , H01L29/78663 , H01L29/78669 , H01L29/78672 , H01L29/78678 , H01L29/7869
摘要： The present invention provides a TFT substrate structure, comprising a Switching TFT and a Driving TFT, and the Switching TFT comprises a first active layer, and the Driving TFT comprises a second active layer, and the first active layer and the second active layer are made by the same or different materials and the electrical properties of the Switching TFT and the Driving TFT are different. According to the different functions of the different TFTs, the present invention employs different working structures for the Switching TFT and the Driving TFT to respectively implement deposition and photolithography, and employs different materials for the active layers of the Switching TFT and the Driving TFT to differentiate the electrical properties of different TFTs in the TFT substrate. Accordingly, the accurate control to the OLED with lowest cost can be realized.

4. 发明授权

US09634032B2 Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof 有权
公开(公告)号：US09634032B2
公开(公告)日：2017-04-25
申请号：US14763822
申请日：2015-05-21
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Shimin Ge , Hejing Zhang , Chihyuan Tseng , Chihyu Su , Wenhui Li , Longqiang Shi , Xiaowen Lv
IPC分类号： H01L21/44 , H01L27/12 , H01L21/02 , H01L21/027 , H01L21/467 , H01L29/24 , H01L29/45 , H01L29/49 , H01L29/51 , H01L29/66 , H01L29/786 , H01L51/52 , H01L27/32
CPC分类号： H01L29/7869 , H01L21/02565 , H01L21/02631 , H01L21/0274 , H01L21/467 , H01L21/47635 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L27/1288 , H01L27/3248 , H01L27/3262 , H01L29/24 , H01L29/45 , H01L29/4908 , H01L29/495 , H01L29/518 , H01L29/66969 , H01L29/78618 , H01L29/78648 , H01L29/78696 , H01L51/5206 , H01L2227/323
摘要： The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate oxide semiconductor TFT substrate utilizes the halftone mask to implement one photo process, which cannot only accomplish the patterning to the oxide semiconductor layer but also obtain the oxide conductor layer (53′) with ion doping process; the method implements the patterning process to the bottom gate isolation layer (31) and the top gate isolation layer (32) at the same time with one photo process; the method manufactures the first top gate (71), the first source (81), the first drain (82), the second top gate (72), the second source (83), the second drain (84) at the same time with one photo process; the method implements patterning process to the flat layer (9), the passivation layer (8) and the top gate isolation layer (32) at the same time with one photo process, to reduce the number of the photo processes to five for shortening the manufacture procedure, raising the production efficiency and lowering the production cost.

5. 发明授权

US09543442B2 Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof 有权
标题翻译：双栅氧化半导体TFT基板的制造方法及其结构
公开(公告)号：US09543442B2
公开(公告)日：2017-01-10
申请号：US14763823
申请日：2015-05-21
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Shimin Ge , Hejing Zhang , Chihyuan Tseng , Chihyu Su , Wenhui Li , Longqiang Shi , Xiaowen Lv
IPC分类号： H01L21/00 , H01L29/786 , H01L27/12 , H01L29/24 , H01L29/49 , G02F1/1343 , G02F1/1368 , G02F1/1333
CPC分类号： H01L27/1225 , G02F1/13439 , G02F1/1368 , G02F2001/133302 , G02F2001/136231 , G02F2201/123 , H01L27/124 , H01L27/127 , H01L27/1288 , H01L29/24 , H01L29/4908 , H01L29/518 , H01L29/66969 , H01L29/78618 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate oxide semiconductor TFT substrate utilizes the halftone mask to implement one photo process, which cannot only accomplish the patterning to the oxide semiconductor layer but also obtain the oxide conductor layer (52′) with ion doping process, and the oxide conductor layer (52′) is employed as being the pixel electrode of the LCD to replace the ITO pixel electrode in prior art; the method manufactures the source (81), the drain (82) and the top gate (71) at the same time with one photo process; the method implements patterning process to the passivation layer (8) and the top gate isolation layer (32) together with one photo process, to reduce the number of the photo processes to five for shortening the manufacture procedure, raising the production efficiency and lowering the production cost.
摘要翻译：本发明提供氧化物半导体TFT基板的制造方法及其结构。双栅极氧化物半导体TFT基板的制造方法利用半色调掩模来实现一种光刻工艺，其不仅可以实现对氧化物半导体层的图案化，而且还可以通过离子掺杂工艺获得氧化物导体层（52'），并且氧化物导体层（52'）用作LCD的像素电极以替代现有技术中的ITO像素电极; 该方法通过一次照相处理同时制造源（81），漏极（82）和顶栅（71）; 该方法与一个照相工艺一起对钝化层（8）和顶栅隔离层（32）进行图案化处理，以将照相工艺的数量减少到五个，以缩短制造程序，提高生产效率和降低生产成本。

6. 发明授权

US09960283B2 Thin-film transistor 有权
公开(公告)号：US09960283B2
公开(公告)日：2018-05-01
申请号：US14416767
申请日：2014-12-22
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Longqiang Shi , Zhiyuan Zeng , Hejing Zhang , Yutong Hu
IPC分类号： H01L29/02 , H01L29/786 , H01L29/417
CPC分类号： H01L29/78696 , H01L29/41733 , H01L29/4175 , H01L29/78648
摘要： Disclosed is a thin-film transistor. The thin-film transistor includes: a substrate; a first gate, a first gate insulation layer, a semiconductor layer, an etching stop layer, and the second gate stacked on a surface of the substrate, in which the semiconductor layer has a thickness of 200 nm-2000 nm; the etching stop layer includes a first via and a second via formed therein; and the first via and the second via are arranged to each correspond to the semiconductor layer; and a source and a drain respectively extending through the first via and the second via to connect to the semiconductor layer. The thin-film transistor has an increased ON-state current and switching speed.

7. 发明授权

US09947699B2 Manufacturing method of dual gate oxide semiconductor TFT substrate and substrate thereof 有权
公开(公告)号：US09947699B2
公开(公告)日：2018-04-17
申请号：US15650972
申请日：2017-07-16
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Shimin Ge , Hejing Zhang , Chihyuan Tseng , Chihyu Su , Wenhui Li , Longqiang Shi , Xiaowen Lv
IPC分类号： H01L21/44 , H01L29/786 , H01L27/12 , H01L29/49 , H01L29/24 , H01L21/02 , H01L27/32
CPC分类号： H01L27/1288 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L27/127 , H01L27/3262 , H01L29/24 , H01L29/4908 , H01L29/78648 , H01L29/7869
摘要： A method for manufacturing a dual gate oxide semiconductor TFT substrate utilizes a halftone mask to implement a photo process, which not only accomplishes patterning to an oxide semiconductor layer but also obtains an oxide conductor layer with ion doping. The method implements patterning to a bottom gate isolation layer and a top gate isolation layer at the same time with one photolithographic process. The method implements patterning to second and third metal layers at the same time to obtain a first source, a first drain, a second source, a second drain, a first top gate and a second top gate with one photolithographic process. The method implements patterning to a second flat layer, a passivation layer and a top gate isolation layer at the same time with one photolithographic process. The number of photolithographic processes involved is reduced to nine so as to simplify the manufacturing process.

8. 发明授权

US09773851B2 OLED display device comprising an insulative layer of varying thickness and manufacturing method thereof 有权
公开(公告)号：US09773851B2
公开(公告)日：2017-09-26
申请号：US14429354
申请日：2015-02-09
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Hejing Zhang , Chihyu Su
IPC分类号： H01L27/32 , H01L51/52
CPC分类号： H01L27/3258 , H01L27/3213 , H01L27/322 , H01L27/3246 , H01L27/3248 , H01L27/3276 , H01L51/525 , H01L2227/323 , H01L2251/5392 , H01L2251/558
摘要： The present invention provides an OLED display device and a manufacture method thereof. By locating a thickness of a part of the second insulative layer correspondingly positioned above the bottom layer wiring in the white sub pixel area is larger than a thickness of other part of the second insulative layer in the white sub pixel area, increase a vertical distance from the bottom layer wiring to the first electrode in the white sub pixel area, and thus, the short circuit, the overcurrent between the first electrode and the bottom layer wiring of the white sub pixel area can be prevented. The manufacture method of the OLED display device is simple, easy for operation, and the manufactured OLED display device can prevent the short circuit or the overcurrent between the first electrode and the bottom layer wiring of the white sub pixel area occur and raise the manufacture yield of the OLED display device.

9. 发明授权

US09768202B2 TFT backplate structure comprising transistors having gate isolation layers of different thicknesses and manufacture method thereof 有权
公开(公告)号：US09768202B2
公开(公告)日：2017-09-19
申请号：US14426155
申请日：2014-09-19
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Xiaowen Lv , Chihyuan Tseng , Chihyu Su , Hejing Zhang
IPC分类号： H01L27/12 , H01L29/78 , H01L21/16 , H01L21/00 , H01L29/24 , H01L21/47 , H01L29/786 , H01L21/77
CPC分类号： H01L27/1251 , H01L21/77 , H01L27/12 , H01L27/1225 , H01L27/1237 , H01L27/1288 , H01L29/7869
摘要： The present invention provides a TFT backplate structure and a manufacture method thereof. The TFT backplate structure comprises a switch TFT (T1) and a drive TFT (T2). The switch TFT (T1) is constructed by a first source/a first drain (61), a first gate (21), and a first etching stopper layer (51), a first oxide semiconductor layer (41), a first gate isolation layer (31) sandwiched in between. The drive TFT (T2) is constructed by a second source/a second drain (62), a second gate (22), and a second oxide semiconductor layer (42), a first etching stopper layer (51), a second gate isolation layer (32) sandwiched in between. The electrical properties of the switch TFT (T1) and the drive TFT (T2) are different. The switch TFT has smaller subthreshold swing to achieve fast charge and discharge, and the drive TFT has relatively larger subthreshold swing for controlling the current and the grey scale more precisely.

10. 发明授权

US09461095B2 OLED display device and manufacturing method thereof 有权
标题翻译： OLED显示装置及其制造方法
公开(公告)号：US09461095B2
公开(公告)日：2016-10-04
申请号：US14428968
申请日：2015-02-09
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Hejing Zhang , Yawei Liu
IPC分类号： H01L51/56 , H01L27/32 , H01L51/52
CPC分类号： H01L27/3213 , H01L27/322 , H01L27/3258 , H01L51/5237 , H01L51/56 , H01L2251/5392
摘要： The present invention provides an OLED display device and a manufacturing method thereof, in which a planarization layer (5) of a white sub pixel zone (40) is made to have a thickness greater than the thickness of a planarization layer (5) of the other sub pixel zones so as to increase the vertical distance between bottom wiring (2) and a first electrode (6) in the white sub pixel zone (40) thereby compensating the problem that the vertical distance between the bottom wiring (2) and the first electrode (6) of the white sub pixel zone (40) is relatively small resulting from lacking of a filter in the white sub pixel zone (40) and preventing the occurrence of shorting or over current between the first electrode (6) and the bottom wiring (2) of the white sub pixel zone (40). The manufacturing method is simple and easy to perform and may prevent the occurrence of shorting or over current between the first electrode and the bottom wiring of the white sub pixel zone thereby enhancing yield rate of manufacture of the OLED display device.
摘要翻译：本发明提供了一种OLED显示装置及其制造方法，其中使白色子像素区域（40）的平坦化层（5）的厚度大于所述平坦化层（5）的厚度其它子像素区域，以增加白色子像素区域（40）中的底部布线（2）与第一电极（6）之间的垂直距离，由此补偿了底部布线（2）和由于在白色子像素区域（40）中缺少滤光器而导致白色子像素区域（40）的第一电极（6）相对较小，并且防止在第一电极（6）和白色子像素区域（40）的底部布线（2）。制造方法简单且易于执行，并且可以防止白色子像素区域的第一电极和底部布线之间的短路或过电流的发生，从而提高OLED显示装置的制造成品率。

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