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    • 6. 发明申请
    • Non volatile semiconductor memory device
    • 非易失性半导体存储器件
    • US20060140003A1
    • 2006-06-29
    • US11272832
    • 2005-11-15
    • Takanori YamazoeShin ItoYoshiki Kawajiri
    • Takanori YamazoeShin ItoYoshiki Kawajiri
    • G11C16/04
    • G11C5/145G11C16/0466G11C16/12G11C16/14
    • In a nonvolatile semiconductor memory device, the increase of the capacity of a nonvolatile semiconductor memory inevitably causes the power supply circuits including the charge pump circuits at the periphery to increase. In view of the above situation, the object of the present invention is to provide a technology of allowing a nonvolatile semiconductor memory to increase the capacity without increasing the power supply circuits which are the peripheral circuits of the nonvolatile semiconductor memory. It is possible to carry out the erase and write of plural memory cell blocks by selecting memory cell blocks one by one in a power supply circuit containing a charge pump circuit having the capability of carrying out the erase and write of a memory cell block and it is also possible, at the time of read and standby, to increase the charge pump capability and select plural memory cell blocks by inputting clock signals having a frequency not less than the frequency of the clock signals at the time of the operations of erase and write to charge pumps.
    • 在非易失性半导体存储器件中,非易失性半导体存储器的容量的增加不可避免地导致包括周边的电荷泵电路的电源电路增加。 鉴于上述情况,本发明的目的是提供一种允许非易失性半导体存储器增加容量而不增加作为非易失性半导体存储器的外围电路的电源电路的技术。 可以通过在包含执行存储单元块的擦除和写入的能力的电荷泵电路的电源电路中逐个选择存储单元块来执行多个存储单元块的擦除和写入,并且 在读取和待机时,也可以通过输入在擦除和写入操作时不小于时钟信号的频率的时钟信号来增加电荷泵能力并选择多个存储单元块 给泵充电。