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1. 发明申请

US20080157106A1 NITRIDE SEMICONDUCTOR LASER ELEMENT 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US20080157106A1
公开(公告)日：2008-07-03
申请号：US11963822
申请日：2007-12-22
申请人： Shingo Masui , Tomonori Morizumi
发明人： Shingo Masui , Tomonori Morizumi
IPC分类号： H01L33/00 , H01L21/306
CPC分类号： H01S5/22 , B82Y20/00 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01S5/0282 , H01S5/2009 , H01S5/2214 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor laser element comprises a substrate, a nitride semiconductor layer that is laminated on the substrate and that has a ridge on its surface, and an electrode that is electrically connected with the nitride semiconductor layer, wherein there is provided an insulating protective film produced by forming a monocrystalline first film or a first film containing hexagonal crystals, and extending from the side faces of the ridge to the nitride semiconductor layer on both sides of the ridge, and a second film containing a polycrystalline or amorphous substance, from the nitride semiconductor layer side, in this order.
摘要翻译：氮化物半导体激光元件包括基板，层叠在基板上并且在其表面上具有脊的氮化物半导体层以及与氮化物半导体层电连接的电极，其中设置有绝缘保护膜，通过形成单晶第一膜或含有六方晶体的第一膜，并且从脊的侧面延伸到脊的两侧上的氮化物半导体层，以及从氮化物半导体中包含多晶或非晶物质的第二膜层面，按顺序。

2. 发明申请

US20080056322A1 NITRIDE SEMICONDUCTOR LASER ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：氮化物半导体激光元件及其制造方法
公开(公告)号：US20080056322A1
公开(公告)日：2008-03-06
申请号：US11849734
申请日：2007-09-04
申请人： Shingo Masui , Tomonori Morizumi
发明人： Shingo Masui , Tomonori Morizumi
IPC分类号： H01S5/323 , H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/22 , H01S5/3203 , H01S2304/12
摘要： A nitride semiconductor laser element comprises a nitride semiconductor substrate and a nitride semiconductor layer laminated thereon, wherein the nitride semiconductor substrate has a high dislocation density region and a low dislocation density region containing lower dislocation than that of the high dislocation density region, and has at least one recess formed in at least the high dislocation density region, the nitride semiconductor layer has a first nitride semiconductor layer in which the grown film thickness in the lateral direction from the side faces of the recess in the substrate is greater than the grown film thickness in the heightwise direction from a region other than the recess, and a second nitride semiconductor layer that is disposed on the first nitride semiconductor layer and contains indium, and the first nitride semiconductor layer and second nitride semiconductor layer have recess over the recess in the nitride semiconductor substrate.
摘要翻译：氮化物半导体激光元件包括层叠在其上的氮化物半导体衬底和氮化物半导体层，其中氮化物半导体衬底具有高位错密度区域和低位错密度低位错位置，而位错密度区域位于高位错密度区域至少一个凹部形成在至少高位错密度区域中，氮化物半导体层具有第一氮化物半导体层，其中从衬底的凹部的侧面沿横向生长的膜厚度大于生长的膜厚度在除了凹部之外的区域的高度方向上，以及第二氮化物半导体层，其设置在第一氮化物半导体层上并且包含铟，并且第一氮化物半导体层和第二氮化物半导体层在氮化物的凹部上具有凹陷半导体衬底。

3. 发明授权

US07773650B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US07773650B2
公开(公告)日：2010-08-10
申请号：US11963822
申请日：2007-12-22
申请人： Shingo Masui , Tomonori Morizumi
发明人： Shingo Masui , Tomonori Morizumi
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01S5/0282 , H01S5/2009 , H01S5/2214 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor laser element comprises a substrate, a nitride semiconductor layer that is laminated on the substrate and that has a ridge on its surface, and an electrode that is electrically connected with the nitride semiconductor layer, wherein there is provided an insulating protective film produced by forming a monocrystalline first film or a first film containing hexagonal crystals, and extending from the side faces of the ridge to the nitride semiconductor layer on both sides of the ridge, and a second film containing a polycrystalline or amorphous substance, from the nitride semiconductor layer side, in this order.
摘要翻译：氮化物半导体激光元件包括基板，层叠在基板上并且在其表面上具有脊的氮化物半导体层以及与氮化物半导体层电连接的电极，其中设置有绝缘保护膜，通过形成单晶第一膜或含有六方晶体的第一膜，并且从脊的侧面延伸到脊的两侧上的氮化物半导体层，以及从氮化物半导体中包含多晶或非晶物质的第二膜层面，按顺序。

4. 发明授权

US08900901B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US08900901B2
公开(公告)日：2014-12-02
申请号：US12814132
申请日：2010-06-11
申请人： Shingo Masui , Tomonori Morizumi
发明人： Shingo Masui , Tomonori Morizumi
IPC分类号： H01L21/20 , H01S5/22 , B82Y20/00 , H01L21/02 , H01S5/028 , H01S5/20 , H01S5/30 , H01S5/343
CPC分类号： H01S5/22 , B82Y20/00 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01S5/0282 , H01S5/2009 , H01S5/2214 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A method is for manufacturing a nitride semiconductor laser element including a substrate, a nitride semiconductor layer that is laminated on the substrate and that has a ridge on its surface, an insulating protective film, and an electrode that is electrically connected with the nitride semiconductor layer. The method includes forming the ridge; forming a monocrystalline first film from the side faces of the ridge to the nitride semiconductor layer on both sides of the ridge; and forming a second film containing polycrystalline or an amorphous substance over the first film thereby forming the insulating protective film.
摘要翻译：一种制造氮化物半导体激光元件的方法，该氮化物半导体激光元件包括：基板，层叠在基板上的氮化物半导体层，其表面具有脊，绝缘保护膜和与氮化物半导体层电连接的电极。该方法包括形成脊; 从脊的侧面到脊的两侧的氮化物半导体层形成单晶第一膜; 以及在所述第一膜上形成含有多晶或非晶物质的第二膜，从而形成所述绝缘保护膜。

5. 发明授权

US07830940B2 Nitride semiconductor laser element having nitride semiconductor substrate and nitride semiconductor layer laminated thereon with nitride semiconductor substrate and nitride semiconductor layer having recesses formed in high dislocation density region of nitride semiconductor substrate and nitride semiconductor layer having portions with different film thicknesses 有权
标题翻译：具有氮化物半导体衬底的氮化物半导体激光元件和层叠有氮化物半导体衬底的氮化物半导体层和在氮化物半导体衬底的高位错密度区域中形成的凹部的氮化物半导体层和具有不同膜厚度的部分的氮化物半导体层
公开(公告)号：US07830940B2
公开(公告)日：2010-11-09
申请号：US11849734
申请日：2007-09-04
申请人： Shingo Masui , Tomonori Morizumi
发明人： Shingo Masui , Tomonori Morizumi
IPC分类号： H01S5/00 , H01L23/58
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/22 , H01S5/3203 , H01S2304/12
摘要： A nitride semiconductor laser element comprises a nitride semiconductor substrate and a nitride semiconductor layer laminated thereon, wherein the nitride semiconductor substrate has a high dislocation density region and a low dislocation density region containing lower dislocation than that of the high dislocation density region, and has at least one recess formed in at least the high dislocation density region, the nitride semiconductor layer has a first nitride semiconductor layer in which the grown film thickness in the lateral direction from the side faces of the recess in the substrate is greater than the grown film thickness in the heightwise direction from a region other than the recess, and a second nitride semiconductor layer that is disposed on the first nitride semiconductor layer and contains indium, and the first nitride semiconductor layer and second nitride semiconductor layer have recess over the recess in the nitride semiconductor substrate.
摘要翻译：氮化物半导体激光元件包括层叠在其上的氮化物半导体衬底和氮化物半导体层，其中氮化物半导体衬底具有高位错密度区域和低位错密度低位错位置，而位错密度区域位于高位错密度区域至少一个凹部形成在至少高位错密度区域中，氮化物半导体层具有第一氮化物半导体层，其中从衬底的凹部的侧面沿横向生长的膜厚度大于生长的膜厚度在除了凹部之外的区域的高度方向上，以及第二氮化物半导体层，其设置在第一氮化物半导体层上并且包含铟，并且第一氮化物半导体层和第二氮化物半导体层在氮化物的凹部上具有凹陷半导体衬底。

6. 发明授权

US08102891B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US08102891B2
公开(公告)日：2012-01-24
申请号：US12716962
申请日：2010-03-03
申请人： Tomonori Morizumi , Atsuo Michiue , Hiroaki Takahashi
发明人： Tomonori Morizumi , Atsuo Michiue , Hiroaki Takahashi
IPC分类号： H01S5/00
CPC分类号： H01S5/0281
摘要： A nitride semiconductor laser element includes a nitride semiconductor layer of a first conduction type, an active layer, and a nitride semiconductor layer of a second conduction type that is different from the first conduction type are laminated in that order, a cavity end face formed by the nitride semiconductor layers, and a protective film formed on the cavity end face. The nitride semiconductor layers of the first and second conduction types have layers containing Al, and the active layer has layer containing In. The protective film has a region in which an axial orientation of crystals is the same as that of the cavity end face on the nitride semiconductor layers of the first and second conduction types, and has another region in which an axial orientation of crystals is different from that of the cavity end face on the active layer.
摘要翻译：氮化物半导体激光元件包括依次层叠具有第一导电类型，有源层和与第一导电类型不同的第二导电类型的氮化物半导体层的氮化物半导体层，空腔端面由氮化物半导体层和形成在腔体端面上的保护膜。第一和第二导电类型的氮化物半导体层具有包含Al的层，并且活性层具有包含In的层。保护膜具有其中晶体的轴向取向与第一和第二导电类型的氮化物半导体层上的空腔端面相同的区域，并且具有另一区域，其中晶体的轴向取向不同于活性层上的腔端面。

7. 发明授权

US07804872B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US07804872B2
公开(公告)日：2010-09-28
申请号：US12132880
申请日：2008-06-04
申请人： Tomonori Morizumi
发明人： Tomonori Morizumi
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/028 , H01S5/0282 , H01S5/166 , H01S5/22
摘要： A nitride semiconductor laser element comprises; a nitride semiconductor layer that includes a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer, and that has a cavity with end faces, and a first protective film that is in contact with at least one end face of the cavity, wherein the first protective film has a film structure in which bright and dark parts comprising a region in contact with the active layer and a region in contact with the first and second nitride semiconductor layers are observed under scanning transmission electron microscopy, or the first protective film has a film structure in which the crystallinity at a portion adjacent to the active layer is different from that at portions adjacent to the first and second nitride semiconductor layers.
摘要翻译：氮化物半导体激光元件包括：包括第一氮化物半导体层，有源层和第二氮化物半导体层的氮化物半导体层，并且具有端面的空腔，以及与所述空腔的至少一个端面接触的第一保护膜其中，所述第一保护膜具有膜结构，其中在扫描透射电子显微镜下观察到包括与所述有源层接触的区域的明暗部分和与所述第一和第二氮化物半导体层接触的区域，或所述第一保护膜膜具有膜结构，其中与有源层相邻的部分的结晶度不同于与第一和第二氮化物半导体层相邻的部分处的结晶度。

8. 发明授权

US07701995B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US07701995B2
公开(公告)日：2010-04-20
申请号：US12166746
申请日：2008-07-02
申请人： Tomonori Morizumi , Atsuo Michiue , Hiroaki Takahashi
发明人： Tomonori Morizumi , Atsuo Michiue , Hiroaki Takahashi
IPC分类号： H01S5/00
CPC分类号： H01S5/0281
摘要： A nitride semiconductor laser element, comprises; nitride semiconductor layers in which a nitride semiconductor layer of a first conduction type, an active layer, and a nitride semiconductor layer of a second conduction type that is different from the first conduction type are laminated in that order; a cavity end face formed by the nitride semiconductor layers; and a protective film formed on the cavity end face, the protective film has a region in which an axial orientation of crystals is different in the direction of lamination of the nitride semiconductor layers.
摘要翻译：一种氮化物半导体激光元件，包括：氮化物半导体层，其中第一导电类型的氮化物半导体层，有源层和与第一导电类型不同的第二导电类型的氮化物半导体层按顺序层压; 由氮化物半导体层形成的腔端面; 以及形成在空腔端面上的保护膜，保护膜具有在氮化物半导体层的层叠方向上晶体的轴向取向不同的区域。

9. 发明授权

US07668218B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US07668218B2
公开(公告)日：2010-02-23
申请号：US12033378
申请日：2008-02-19
申请人： Atsuo Michiue , Tomonori Morizumi , Hiroaki Takahashi
发明人： Atsuo Michiue , Tomonori Morizumi , Hiroaki Takahashi
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0021 , H01S5/0282 , H01S5/0283 , H01S5/1082 , H01S5/2201 , H01S5/34333 , H01S2301/176 , H01S2304/04
摘要： The present invention provides a nitride semiconductor laser element, comprising: a nitride semiconductor structure having a first nitride semiconductor layer, a second nitride semiconductor layer, and an active layer provided between the first and second nitride semiconductor layers; a cavity end face provided to the nitride semiconductor structure; and a protective film having a hexagonal crystal structure, and having a first region provided on a first crystal surface of the nitride semiconductor structure in the cavity end face and a second region provided on a second crystal surface in the surface of at least one of the first and second nitride semiconductor layer, the first and second regions of the protective film are oriented in the same axial direction as that of the respective first and second crystal surfaces.
摘要翻译：本发明提供了一种氮化物半导体激光元件，包括：具有第一氮化物半导体层，第二氮化物半导体层和设置在第一和第二氮化物半导体层之间的有源层的氮化物半导体结构; 设置到所述氮化物半导体结构的腔端面; 以及具有六方晶系结构的保护膜，并且具有设置在所述空腔端面中的所述氮化物半导体结构的第一晶面上的第一区域和设置在所述第二晶体表面中的至少一个第一和第二氮化物半导体层，保护膜的第一和第二区域被定向在与第一和第二晶体表面相同的轴向方向上。

10. 发明授权

US07646798B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US07646798B2
公开(公告)日：2010-01-12
申请号：US11963825
申请日：2007-12-22
申请人： Atsuo Michiue , Tomonori Morizumi , Hiroaki Takahashi
发明人： Atsuo Michiue , Tomonori Morizumi , Hiroaki Takahashi
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , B82Y20/00 , H01L33/44 , H01S5/0281 , H01S5/0282 , H01S5/22 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor laser element comprises; a nitride semiconductor layer that includes a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer, and that has a cavity with end faces, and a protective film formed on at least one end face of the cavity, wherein the protective film is formed of a first film with a crystal structure that has the same axial orientation as that of the nitride semiconductor layer constituting the end face of the cavity, and a second film with a crystal structure that has a different axial orientation from that of the first film, in this order from the side of the end face.
摘要翻译：氮化物半导体激光元件包括：氮化物半导体层，其包括第一氮化物半导体层，有源层和第二氮化物半导体层，并且具有端面的空腔和形成在空腔的至少一个端面上的保护膜，其中所述保护膜由具有与构成空腔的端面的氮化物半导体层相同的轴向定向的晶体结构的第一膜形成，并且具有晶体结构的第二膜具有与第一部电影，从这个顺序从端面的一面。

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