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1. 发明申请

US20140140362A1 SEMICONDUCTOR LASER ELEMENT 有权
标题翻译：半导体激光元件
公开(公告)号：US20140140362A1
公开(公告)日：2014-05-22
申请号：US14130896
申请日：2012-07-04
申请人： Shingo Masui , Yasuhiro Kawata , Hideyuki Fujimoto , Atsuo Michiue
发明人： Shingo Masui , Yasuhiro Kawata , Hideyuki Fujimoto , Atsuo Michiue
IPC分类号： H01S5/22
CPC分类号： H01S5/22 , B82Y20/00 , H01L24/32 , H01S5/0014 , H01S5/0021 , H01S5/0202 , H01S5/0224 , H01S5/02272 , H01S5/02476 , H01S5/028 , H01S5/0425 , H01S5/34333 , H01S2301/173 , H01S2301/176
摘要： To provide a ridge-type semiconductor laser element capable of preventing inclination at the time of junction-down bonding and having high heat dissipation, in a semiconductor laser element including a substrate, a semiconductor portion disposed on the substrate and having a ridge on a surface at an opposite side from the substrate, an electrode disposed on a ridge, an insulating layer disposed on the semiconductor portion at the both sides of the ridge and a pad electrode disposed on the electrode, in which, the pad electrode side is a mounting surface side, the pad electrode is disposed extending on the insulating layer, and a spacer is disposed between the semiconductor portion and the pad electrode at parts spaced apart from the ridge.
摘要翻译：为了提供一种能够防止在结合接合时具有高散热时的倾斜的脊型半导体激光元件，在包括基板的半导体激光元件中，设置在基板上的半导体部分并且在表面上具有脊在与基板相反的一侧，设置在脊上的电极，设置在脊的两侧的半导体部分上的绝缘层和设置在电极上的焊盘电极，其中焊盘电极侧是安装表面所述焊盘电极被设置在所述绝缘层上延伸，并且在所述半导体部分和所述焊盘电极之间的间隔设置在与所述脊部间隔开的部分处。

2. 发明授权

US07804882B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US07804882B2
公开(公告)日：2010-09-28
申请号：US11812007
申请日：2007-06-14
申请人： Shingo Masui , Kazutaka Tsukayama
发明人： Shingo Masui , Kazutaka Tsukayama
IPC分类号： H01S3/08
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0213 , H01S5/0218 , H01S5/12 , H01S5/1228 , H01S5/1231
摘要： A nitride semiconductor laser element, comprises a substrate and a nitride semiconductor layer in which a first semiconductor layer, an active layer, and a second semiconductor layer are laminated in this order on the substrate, wherein recessed and raised portions are formed in the first semiconductor layer and/or the second semiconductor layer, a semiconductor layer that embeds the recessed and raised portions are formed on the semiconductor layer in which said recessed and raised portions are formed, the semiconductor layer in which the recessed and raised portions are formed is equipped with a side face having a first region extending downward and a second region extending farther downward continuously from the first region, and the second region has a greater slope with respect to the normal direction of the substrate than the first region.
摘要翻译：氮化物半导体激光元件包括基板和氮化物半导体层，其中第一半导体层，有源层和第二半导体层依次层叠在基板上，其中在第一半导体中形成凹凸部层和/或第二半导体层，嵌入凹凸部的半导体层形成在形成有凹部和凸部的半导体层上，形成有凹部和凸部的半导体层配备有具有向下延伸的第一区域和从所述第一区域连续向下延伸的第二区域的侧面，并且所述第二区域相对于所述基板的法线方向具有比所述第一区域更大的倾斜度。

3. 发明授权

US07773650B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US07773650B2
公开(公告)日：2010-08-10
申请号：US11963822
申请日：2007-12-22
申请人： Shingo Masui , Tomonori Morizumi
发明人： Shingo Masui , Tomonori Morizumi
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01S5/0282 , H01S5/2009 , H01S5/2214 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor laser element comprises a substrate, a nitride semiconductor layer that is laminated on the substrate and that has a ridge on its surface, and an electrode that is electrically connected with the nitride semiconductor layer, wherein there is provided an insulating protective film produced by forming a monocrystalline first film or a first film containing hexagonal crystals, and extending from the side faces of the ridge to the nitride semiconductor layer on both sides of the ridge, and a second film containing a polycrystalline or amorphous substance, from the nitride semiconductor layer side, in this order.
摘要翻译：氮化物半导体激光元件包括基板，层叠在基板上并且在其表面上具有脊的氮化物半导体层以及与氮化物半导体层电连接的电极，其中设置有绝缘保护膜，通过形成单晶第一膜或含有六方晶体的第一膜，并且从脊的侧面延伸到脊的两侧上的氮化物半导体层，以及从氮化物半导体中包含多晶或非晶物质的第二膜层面，按顺序。

4. 发明授权

US08995492B2 Semiconductor laser element 有权
标题翻译：半导体激光元件
公开(公告)号：US08995492B2
公开(公告)日：2015-03-31
申请号：US14130896
申请日：2012-07-04
申请人： Shingo Masui , Yasuhiro Kawata , Hideyuki Fujimoto , Atsuo Michiue
发明人： Shingo Masui , Yasuhiro Kawata , Hideyuki Fujimoto , Atsuo Michiue
IPC分类号： H01S5/00 , H01S5/22 , H01S5/022 , H01S5/042 , B82Y20/00 , H01S5/02 , H01S5/024 , H01S5/028 , H01S5/343
CPC分类号： H01S5/22 , B82Y20/00 , H01L24/32 , H01S5/0014 , H01S5/0021 , H01S5/0202 , H01S5/0224 , H01S5/02272 , H01S5/02476 , H01S5/028 , H01S5/0425 , H01S5/34333 , H01S2301/173 , H01S2301/176
摘要： To provide a ridge-type semiconductor laser element capable of preventing inclination at the time of junction-down bonding and having high heat dissipation, in a semiconductor laser element including a substrate, a semiconductor portion disposed on the substrate and having a ridge on a surface at an opposite side from the substrate, an electrode disposed on a ridge, an insulating layer disposed on the semiconductor portion at the both sides of the ridge and a pad electrode disposed on the electrode, in which, the pad electrode side is a mounting surface side, the pad electrode is disposed extending on the insulating layer, and a spacer is disposed between the semiconductor portion and the pad electrode at parts spaced apart from the ridge.
摘要翻译：为了提供一种能够防止在结合接合时具有高散热时的倾斜的脊型半导体激光元件，在包括基板的半导体激光元件中，设置在基板上的半导体部分并且在表面上具有脊在与基板相反的一侧，设置在脊上的电极，设置在脊的两侧的半导体部分上的绝缘层和设置在电极上的焊盘电极，其中焊盘电极侧是安装表面所述焊盘电极被设置在所述绝缘层上延伸，并且在所述半导体部分和所述焊盘电极之间的间隔设置在与所述脊部间隔开的部分处。

5. 发明授权

US08548023B2 Semiconductor laser element 有权
标题翻译：半导体激光元件
公开(公告)号：US08548023B2
公开(公告)日：2013-10-01
申请号：US12742075
申请日：2008-10-31
申请人： Shinya Sonobe , Shingo Masui
发明人： Shinya Sonobe , Shingo Masui
IPC分类号： H01S5/16 , H01S5/20 , H01S5/24
CPC分类号： H01S5/168 , B82Y20/00 , H01S5/0021 , H01S5/028 , H01S5/0283 , H01S5/0425 , H01S5/166 , H01S5/2086 , H01S5/2214 , H01S5/222 , H01S5/3214 , H01S5/34333 , H01S2301/176 , H01S2301/18 , H01S2304/04
摘要： A semiconductor laser element includes a laminate composed of a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and a second embedded layer that is in contact with the second conductivity type semiconductor layer, has a stripe-like groove parallel to the cavity direction, and is composed of an insulator, the groove is embedded with a first embedded layer composed of a dielectric on the cavity end face side, and with a conductive layer on the inside.
摘要翻译：半导体激光元件包括由第一导电类型半导体层，有源层和第二导电类型半导体层构成的层叠体; 与第二导电型半导体层接触的第二嵌入层具有与空洞方向平行的条状槽，由绝缘体构成，所述槽嵌入由电介质构成的第一嵌入层腔体端面侧，内侧有导电层。

6. 发明授权

US08406264B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US08406264B2
公开(公告)日：2013-03-26
申请号：US12902974
申请日：2010-10-12
申请人： Shingo Masui
发明人： Shingo Masui
IPC分类号： H01S5/125 , H01S5/183
CPC分类号： H01S5/0201 , B82Y20/00 , H01S5/0202 , H01S5/22 , H01S5/34333 , H01S2301/173
摘要： A nitride semiconductor laser element includes a laminate. The laminate includes on a substrate a first conductivity type nitride semiconductor layer, an active layer, and a second conductivity type nitride semiconductor layer, and constitutes a cavity resonator. The laminate includes an element region, an exposed region and an island layer. The element region is a region in which the laser element is formed. The exposed region is a region in which at least the first conductivity type nitride semiconductor layer is exposed on both sides of the element region in the cavity direction, and which is provided continuously in a cavity resonating direction of the laser element. The island layer is separated from the element region by the exposed region, and that is disposed in a corner of the nitride semiconductor laser element.
摘要翻译：氮化物半导体激光元件包括层叠体。层叠体在基板上包括第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，并且构成空腔谐振器。层压体包括元件区域，暴露区域和岛状层。元件区域是形成激光元件的区域。曝光区域是至少第一导电型氮化物半导体层在空腔方向上在元件区域的两侧露出的区域，并且在激光元件的空腔谐振方向上连续地设置。岛层通过暴露区域与元件区域分离，并且设置在氮化物半导体激光元件的角部中。

7. 发明授权

US08358674B2 Semiconductor laser element and method of manufacturing thereof 有权
标题翻译：半导体激光元件及其制造方法
公开(公告)号：US08358674B2
公开(公告)日：2013-01-22
申请号：US13051805
申请日：2011-03-18
申请人： Shinya Sonobe , Shingo Masui , Takashi Miyoshi
发明人： Shinya Sonobe , Shingo Masui , Takashi Miyoshi
IPC分类号： H01S5/00
CPC分类号： H01S5/0425 , B82Y20/00 , H01S5/2086 , H01S5/22 , H01S5/221 , H01S5/2214 , H01S5/222 , H01S5/3202 , H01S5/3214 , H01S5/34333 , H01S2301/176
摘要： A semiconductor laser element having; a substrate, a semiconductor layer laminated a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer in that order on the substrate, a stripe-like ridge formed on the upper face of the second conductivity type semiconductor layer, a conductive oxide layer formed on the upper face of the ridge, a dielectric layer, with a refractive index that is lower than the refractive index of the semiconductor layer, formed on the side faces of the ridge, and a metal layer formed so as to cover the conductive oxide layer and the dielectric layer, the surface of the conductive oxide layer is exposed from the dielectric layer, and the side faces of the conductive oxide layer are sloped with respect to the upper face of the ridge, and the inclination angle of the side faces of the conductive oxide layer with respect to the normal direction is greater than the inclination angle of the side faces of the ridge with respect to the normal direction.
摘要翻译：一种半导体激光元件，具有：衬底，在衬底上依次层叠第一导电型半导体层，有源层和第二导电类型半导体层的半导体层，形成在第二导电类型半导体层的上表面上的条状脊，形成在脊的上表面上的导电氧化物层，形成在脊的侧面上的具有低于半导体层的折射率的折射率的介电层和形成为覆盖的金属层导电氧化物层和电介质层，导电氧化物层的表面从电介质层露出，导电氧化物层的侧面相对于脊的上表面倾斜，并且倾斜角度导电氧化物层相对于法线方向的侧面大于脊相对于法线方向的侧面的倾斜角度。

8. 发明授权

US07781796B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US07781796B2
公开(公告)日：2010-08-24
申请号：US11812006
申请日：2007-06-14
申请人： Shingo Masui , Kazutaka Tsukayama
发明人： Shingo Masui , Kazutaka Tsukayama
IPC分类号： H01L33/00
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/0654 , H01S5/1231 , H01S5/2009 , H01S5/22 , H01S5/30 , H01S5/3063 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12
摘要： A nitride semiconductor laser element includes a substrate and a nitride semiconductor layer in which a first semiconductor layer, an active layer, and a second semiconductor layer are laminated in this order on the substrate. At least one of the first semiconductor layer and the second semiconductor layer includes a first section forming recessed and raised portions and a second section embedding the recessed and raised portions of the first section. A region with a higher aluminum mixed crystal ratio than the second section that embeds the recessed and raised portions is disposed on top faces of the raised portions. The nitride semiconductor layer defines resonant planes, and the recessed and raised portions are formed in a shape of stripes that extend substantially parallel to the resonant planes.
摘要翻译：氮化物半导体激光元件包括基板和氮化物半导体层，其中第一半导体层，有源层和第二半导体层依次层叠在基板上。第一半导体层和第二半导体层中的至少一个包括形成凹凸部的第一部分和嵌入第一部分的凹部和凸起部分的第二部分。具有比嵌入凸起部分的第二部分更高的铝混晶比的区域设置在凸起部分的顶面上。氮化物半导体层限定谐振平面，并且凹部和凸起部分形成为基本上平行于谐振平面延伸的条状。

9. 发明授权

US07420999B2 Nitride semiconductor laser element and method for manufacturing same 有权
标题翻译：氮化物半导体激光元件及其制造方法
公开(公告)号：US07420999B2
公开(公告)日：2008-09-02
申请号：US11682737
申请日：2007-03-06
申请人： Shingo Masui
发明人： Shingo Masui
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0021 , H01S5/22 , H01S5/2214 , H01S5/222 , H01S5/305 , H01S5/3063 , H01S5/3216 , H01S2301/176 , H01S2301/18 , H01S2304/04
摘要： A nitride semiconductor laser element, comprises a substrate, a nitride semiconductor layer laminated on said substrate and having a ridge on its surface, a first protective film that covers said nitride semiconductor layer, and an electrode form on the ridge and the first protective film, wherein the first protective film covers part of the nitride semiconductor layer surface in a contact state, and covers from the periphery around the base of the ridge to the side faces of the ridge in a non-contact state, resulting in a cavity being disposed from said ridge side faces to the ridge base periphery.
摘要翻译：一种氮化物半导体激光元件，包括：衬底，层叠在所述衬底上并在其表面上具有脊的氮化物半导体层，覆盖所述氮化物半导体层的第一保护膜和所述脊上的电极形式和所述第一保护膜，其中，所述第一保护膜以接触状态覆盖所述氮化物半导体层表面的一部分，并且从所述脊的基部周围的周边到所述脊的侧面以非接触状态覆盖，从而使空腔从所述脊侧面朝向脊基部周边。

10. 发明申请

US20070217461A1 NITRIDE SEMICONDUCTOR LASER ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：氮化物半导体激光元件及其制造方法
公开(公告)号：US20070217461A1
公开(公告)日：2007-09-20
申请号：US11682737
申请日：2007-03-06
申请人： Shingo Masui
发明人： Shingo Masui
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0021 , H01S5/22 , H01S5/2214 , H01S5/222 , H01S5/305 , H01S5/3063 , H01S5/3216 , H01S2301/176 , H01S2301/18 , H01S2304/04
摘要： A nitride semiconductor laser element, comprises a substrate, a nitride semiconductor layer laminated on said substrate and having a ridge on its surface, a first protective film that covers said nitride semiconductor layer, and an electrode form on the ridge and the first protective film, wherein the first protective film covers part of the nitride semiconductor layer surface in a contact state, and covers from the periphery around the base of the ridge to the side faces of the ridge in a non-contact state, resulting in a cavity being disposed from said ridge side faces to the ridge base periphery.
摘要翻译：一种氮化物半导体激光元件，包括：衬底，层叠在所述衬底上并在其表面上具有脊的氮化物半导体层，覆盖所述氮化物半导体层的第一保护膜和所述脊上的电极形式和所述第一保护膜，其中，所述第一保护膜以接触状态覆盖所述氮化物半导体层表面的一部分，并且从所述脊的基部周围的周边到所述脊的侧面以非接触状态覆盖，从而使空腔从所述脊侧面朝向脊基部周边。

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