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1. 发明申请

US20130149807A1 Backside Illuminated CMOS Image Sensor 有权
标题翻译：背面照明CMOS图像传感器
公开(公告)号：US20130149807A1
公开(公告)日：2013-06-13
申请号：US13416004
申请日：2012-03-09
申请人： Shiu-Ko JangJian , Volume Chien , Szu-An Wu
发明人： Shiu-Ko JangJian , Volume Chien , Szu-An Wu
IPC分类号： H01L31/0232 , H01L31/02
CPC分类号： H01L27/1464 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L27/14698
摘要： A backside illuminated CMOS image sensor comprises a photo active region formed over a substrate using a front side ion implantation process and an extended photo active region formed adjacent to the photo active region, wherein the extended photo active region is formed by using a backside ion implantation process. The backside illuminated CMOS image sensor may further comprise a laser annealed layer on the backside of the substrate. The extended photo active region helps to increase the number of photons converted into electrons so as to improve quantum efficiency.
摘要翻译：背面照明CMOS图像传感器包括使用前侧离子注入工艺和邻近光有源区形成的延伸的光有源区在衬底上形成的光有源区，其中扩展的光有源区通过使用背侧离子注入形成处理。背面照明的CMOS图像传感器还可以包括在衬底的背面上的激光退火层。扩展的光有源区域有助于增加转换成电子的光子数量，以提高量子效率。

2. 发明授权

US09123608B2 Backside illuminated CMOS image sensor 有权
标题翻译：背面照明CMOS图像传感器
公开(公告)号：US09123608B2
公开(公告)日：2015-09-01
申请号：US13416004
申请日：2012-03-09
申请人： Shiu-Ko JangJian , Volume Chien , Szu-An Wu
发明人： Shiu-Ko JangJian , Volume Chien , Szu-An Wu
IPC分类号： H01L21/00 , H01L27/146
CPC分类号： H01L27/1464 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L27/14698
摘要： A backside illuminated CMOS image sensor comprises a photo active region formed over a substrate using a front side ion implantation process and an extended photo active region formed adjacent to the photo active region, wherein the extended photo active region is formed by using a backside ion implantation process. The backside illuminated CMOS image sensor may further comprise a laser annealed layer on the backside of the substrate. The extended photo active region helps to increase the number of photons converted into electrons so as to improve quantum efficiency.
摘要翻译：背面照明CMOS图像传感器包括使用前侧离子注入工艺和邻近光有源区形成的延伸的光有源区在衬底上形成的光有源区，其中扩展的光有源区通过使用背侧离子注入形成处理。背面照明的CMOS图像传感器还可以包括在衬底的背面上的激光退火层。扩展的光有源区域有助于增加转换成电子的光子数量，以提高量子效率。

3. 发明授权

US08946083B2 In-situ formation of silicon and tantalum containing barrier 有权
标题翻译：硅和钽的屏障原位形成
公开(公告)号：US08946083B2
公开(公告)日：2015-02-03
申请号：US13167857
申请日：2011-06-24
申请人： Shiu-Ko JangJian , Ting-Chun Wang , Szu-An Wu
发明人： Shiu-Ko JangJian , Ting-Chun Wang , Szu-An Wu
IPC分类号： H01L21/44 , H01L21/3105 , H01L21/768 , H01L23/48
CPC分类号： H01L23/4827 , H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L21/76843 , H01L21/76855 , H01L21/76898 , H01L23/481 , H01L23/50 , H01L2924/0002 , H01L2924/00
摘要： A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. A portion of the silicon rich layer extends into the opening and contacts the dielectric layer. A tantalum-containing layer is formed over and the contacting the silicon rich layer. An annealing is performed to react the tantalum-containing layer with the silicon rich layer, so that a tantalum-and-silicon containing layer is formed.
摘要翻译：一种方法包括在电介质层中形成开口，并且在介电层的表面上形成富硅层。富硅层的一部分延伸到开口中并与电介质层接触。在富含硅层上方形成含钽层。进行退火以使含钽层与富硅层反应，从而形成含钽和硅的层。

4. 发明申请

US20130075831A1 METAL GATE STACK HAVING TIALN BLOCKING/WETTING LAYER 审中-公开
标题翻译：金属门盖有天然气阻塞/湿润层
公开(公告)号：US20130075831A1
公开(公告)日：2013-03-28
申请号：US13244355
申请日：2011-09-24
申请人： Shiu-Ko JangJian , Szu-An Wu , Ying-Lang Wang , Chi-Wen Liu
发明人： Shiu-Ko JangJian , Szu-An Wu , Ying-Lang Wang , Chi-Wen Liu
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545
摘要： A metal gate stack having a TiAlN blocking/wetting layer, and methods of manufacturing the same, are disclosed. In an example, an integrated circuit device includes a semiconductor substrate and a gate stack disposed over the semiconductor substrate. The gate stack includes a gate dielectric layer disposed over the semiconductor substrate; a work function layer disposed over the gate dielectric layer; a multi-function wetting/blocking layer disposed over the work function layer, wherein the multi-function wetting/blocking layer is a titanium aluminum nitride layer; and a conductive layer disposed over the multi-function wetting/blocking layer.
摘要翻译：公开了具有TiAlN阻挡/润湿层的金属栅极堆叠及其制造方法。在一个示例中，集成电路器件包括设置在半导体衬底上的半导体衬底和栅极堆叠。栅极堆叠包括设置在半导体衬底上的栅介质层; 设置在所述栅极介电层上的功函数层; 设置在所述功函数层上的多功能润湿/阻挡层，其中所述多功能润湿/阻挡层是氮化铝钛层; 以及设置在多功能润湿/阻挡层上的导电层。

5. 发明申请

US20130181258A1 IMAGE SENSOR AND METHOD OF MANUFACTURING 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US20130181258A1
公开(公告)日：2013-07-18
申请号：US13349221
申请日：2012-01-12
申请人： Shiu-Ko JangJian , Kei-Wei CHEN , Szu-An WU , Ying-Lang WANG
发明人： Shiu-Ko JangJian , Kei-Wei CHEN , Szu-An WU , Ying-Lang WANG
IPC分类号： H01L27/148 , H01L27/146
CPC分类号： H01L27/14621 , H01L27/14623 , H01L27/1464
摘要： An image sensor includes a substrate having opposite first and second sides, a multilayer structure on the first side of the substrate, and a photo-sensitive element on the second side of the substrate. The photo-sensitive element is configured to receive light that is incident upon the first side and transmitted through the multilayer structure and the substrate. The multilayer structure includes first and second light transmitting layers. The first light transmitting layer is sandwiched between the substrate and the second light transmitting layer. The first light transmitting layer has a refractive index that is from 60% to 90% of a refractive index of the substrate. The second light transmitting layer has a refractive index that is lower than the refractive index of the first light transmitting layer and is from 40% to 70% of the refractive index of the substrate.
摘要翻译：图像传感器包括具有相对的第一和第二侧的基板，在基板的第一侧上的多层结构和在基板的第二侧上的感光元件。光敏元件被配置为接收入射在第一侧并透过多层结构和基板的光。该多层结构包括第一和第二透光层。第一透光层夹在基板和第二透光层之间。第一透光层的折射率为基板折射率的60％至90％。第二透光层的折射率低于第一透光层的折射率，为基板的折射率的40％〜70％。

6. 发明授权

US07611589B2 Methods of spin-on wafer cleaning 有权
标题翻译：旋转晶圆清洗方法
公开(公告)号：US07611589B2
公开(公告)日：2009-11-03
申请号：US11072114
申请日：2005-03-04
申请人： Jun Wu , Dong-Xuan Lu , Shih-Chi Lin , Wen-Long Lee , Yi-An Jian , Guang-Cheng Wang , Shiu-Ko JangJian , Chyi-Tsong Ni , Szu-An Wu , Ying-Lang Wang
发明人： Jun Wu , Dong-Xuan Lu , Shih-Chi Lin , Wen-Long Lee , Yi-An Jian , Guang-Cheng Wang , Shiu-Ko JangJian , Chyi-Tsong Ni , Szu-An Wu , Ying-Lang Wang
IPC分类号： B08B3/02 , B08B1/04
CPC分类号： B08B1/04 , B08B3/02 , H01L21/67051
摘要： A method for spin-on wafer cleaning. The method comprises controlling spin speed and vertical water jet pressure. The vertical jet pressure and the spin speed are substantially maintained in inverse proportion. Wafer spin speed is between 50 to 1200 rpm. Vertical wafer jet pressure is between 0.05 to 100 KPa.
摘要翻译：旋转晶片清洗的方法。该方法包括控制旋转速度和垂直喷水压力。垂直喷射压力和旋转速度基本保持成反比例。晶圆转速在50至1200rpm之间。垂直晶片喷射压力为0.05至100KPa。

7. 发明授权

US09673244B2 Image sensor isolation region and method of forming the same 有权
公开(公告)号：US09673244B2
公开(公告)日：2017-06-06
申请号：US13415546
申请日：2012-03-08
申请人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Szu-An Wu
发明人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Szu-An Wu
IPC分类号： H01L31/109 , H01L27/146
CPC分类号： H01L27/1463 , H01L27/1464
摘要： Image sensors comprising an isolation region according to embodiments are disclosed, as well as methods of forming the image sensors with isolation region. An embodiment is a structure comprising a semiconductor substrate, a photo element in the semiconductor substrate, and an isolation region in the semiconductor substrate. The isolation region is proximate the photo element and comprises a dielectric material and an epitaxial region. The epitaxial region is disposed between the semiconductor substrate and the dielectric material.

8. 发明授权

US09219092B2 Grids in backside illumination image sensor chips and methods for forming the same 有权
标题翻译：背面照明图像传感器芯片中的栅格及其形成方法
公开(公告)号：US09219092B2
公开(公告)日：2015-12-22
申请号：US13396426
申请日：2012-02-14
申请人： Shiu-Ko JangJian , Szu-An Wu , Sheng-Wen Chen
发明人： Shiu-Ko JangJian , Szu-An Wu , Sheng-Wen Chen
IPC分类号： H01L31/0232 , H01L27/146
CPC分类号： H01L27/1446 , H01L27/14632 , H01L27/1464 , H01L27/14685 , H01L27/14687 , H01L27/14689
摘要： A device includes a semiconductor substrate, which has a front side and a backside. A photo-sensitive device is disposed on the front side of the semiconductor substrate. A first and a second grid line are parallel to each other, and are disposed on the backside of, and overlying, the semiconductor substrate. A stacked layer includes an adhesion layer, a metal layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.
摘要翻译：一种器件包括具有正面和背面的半导体衬底。光敏装置设置在半导体基板的正面上。第一和第二栅极线彼此平行，并且设置在半导体衬底的背面并且覆盖其上。堆叠层包括粘合层，粘合层上的金属层和金属层上的高折射率层。粘合层，金属层和高折射率层基本上共形，并且在第一和第二栅格线的顶表面和侧壁上延伸。

9. 发明申请

US20060196526A1 Methods of spin-on wafer cleaning 有权
公开(公告)号：US20060196526A1
公开(公告)日：2006-09-07
申请号：US11072114
申请日：2005-03-04
申请人： Jun Wu , Dong-Xuan Lu , Shih-Chi Lin , Wen-Long Lee , Yi-An Jian , Guang-Cheng Wang , Shiu-Ko JangJian , Chyi-Tsong Ni , Szu-An Wu , Ying-Lang Wang
发明人： Jun Wu , Dong-Xuan Lu , Shih-Chi Lin , Wen-Long Lee , Yi-An Jian , Guang-Cheng Wang , Shiu-Ko JangJian , Chyi-Tsong Ni , Szu-An Wu , Ying-Lang Wang
IPC分类号： C23G1/00 , B08B7/00 , B08B3/00
CPC分类号： B08B1/04 , B08B3/02 , H01L21/67051
摘要： A method for spin-on wafer cleaning. The method comprises controlling spin speed and vertical water jet pressure. The vertical jet pressure and the spin speed are substantially maintained in inverse proportion. Wafer spin speed is between 50 to 1200 rpm. Vertical wafer jet pressure is between 0.05 to 100 KPa.

10. 发明申请

US20130234202A1 Image Sensor Isolation Region and Method of Forming the Same 有权
标题翻译：图像传感器隔离区域及其形成方法
公开(公告)号：US20130234202A1
公开(公告)日：2013-09-12
申请号：US13415546
申请日：2012-03-08
申请人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Szu-An Wu
发明人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Szu-An Wu
IPC分类号： H01L31/109 , H01L31/18
CPC分类号： H01L27/1463 , H01L27/1464
摘要： Image sensors comprising an isolation region according to embodiments are disclosed, as well as methods of forming the image sensors with isolation region. An embodiment is a structure comprising a semiconductor substrate, a photo element in the semiconductor substrate, and an isolation region in the semiconductor substrate. The isolation region is proximate the photo element and comprises a dielectric material and an epitaxial region. The epitaxial region is disposed between the semiconductor substrate and the dielectric material.
摘要翻译：公开了包括根据实施例的隔离区域的图像传感器，以及形成具有隔离区域的图像传感器的方法。实施例是包括半导体衬底，半导体衬底中的光电元件和半导体衬底中的隔离区域的结构。隔离区域靠近光电元件并且包括电介质材料和外延区域。外延区域设置在半导体衬底和电介质材料之间。

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