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1. 发明授权

US08344363B2 Semiconductor device and method of manufacturing same 有权
公开(公告)号：US08344363B2
公开(公告)日：2013-01-01
申请号：US12750325
申请日：2010-03-30
申请人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
IPC分类号： H01L35/24
CPC分类号： H01L51/5209 , G01J1/4228 , H01L25/167 , H01L27/3206 , H01L27/3211 , H01L27/322 , H01L27/3244 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L33/0041 , H01L51/0096 , H01L51/5206 , H01L51/5218 , H01L51/5221 , H01L51/5234 , H01L51/524 , H01L51/5271 , H01L51/529 , H01L51/56 , H01L2227/323 , H01L2251/5315
摘要： A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction.

2. 发明授权

US07786496B2 Semiconductor device and method of manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07786496B2
公开(公告)日：2010-08-31
申请号：US10421238
申请日：2003-04-23
申请人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
IPC分类号： H01L35/24
CPC分类号： H01L51/5209 , G01J1/4228 , H01L25/167 , H01L27/3206 , H01L27/3211 , H01L27/322 , H01L27/3244 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L33/0041 , H01L51/0096 , H01L51/5206 , H01L51/5218 , H01L51/5221 , H01L51/5234 , H01L51/524 , H01L51/5271 , H01L51/529 , H01L51/56 , H01L2227/323 , H01L2251/5315
摘要： A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction.
摘要翻译：在半导体基板上形成FET，在绝缘体的上端形成具有曲率半径的曲面，第一电极的一部分相对于曲面露出，形成倾斜面，对发光区域进行蚀刻以暴露第一电极。从有机化合物层发出的发光由第一电极的倾斜表面反射，以增加沿某一方向取出的发光总量。

3. 发明申请

US20060267030A1 Semiconductor device and method of manufacturing same 有权
公开(公告)号：US20060267030A1
公开(公告)日：2006-11-30
申请号：US11497618
申请日：2006-08-02
申请人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
IPC分类号： H01L31/12
CPC分类号： H01L51/5209 , G01J1/4228 , H01L25/167 , H01L27/3206 , H01L27/3211 , H01L27/322 , H01L27/3244 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L33/0041 , H01L51/0096 , H01L51/5206 , H01L51/5218 , H01L51/5221 , H01L51/5234 , H01L51/524 , H01L51/5271 , H01L51/529 , H01L51/56 , H01L2227/323 , H01L2251/5315
摘要： A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction.

4. 发明授权

US07482182B2 Semiconductor device and method of manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07482182B2
公开(公告)日：2009-01-27
申请号：US11497618
申请日：2006-08-02
申请人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
IPC分类号： H01L21/00
CPC分类号： H01L51/5209 , G01J1/4228 , H01L25/167 , H01L27/3206 , H01L27/3211 , H01L27/322 , H01L27/3244 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L33/0041 , H01L51/0096 , H01L51/5206 , H01L51/5218 , H01L51/5221 , H01L51/5234 , H01L51/524 , H01L51/5271 , H01L51/529 , H01L51/56 , H01L2227/323 , H01L2251/5315
摘要： A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction.
摘要翻译：在半导体基板上形成FET，在绝缘体的上端形成具有曲率半径的曲面，第一电极的一部分相对于曲面露出，形成倾斜面，对发光区域进行蚀刻以暴露第一电极。从有机化合物层发出的发光由第一电极的倾斜表面反射，以增加沿某一方向取出的发光总量。

5. 发明授权

US07402948B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US07402948B2
公开(公告)日：2008-07-22
申请号：US10422380
申请日：2003-04-24
申请人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
IPC分类号： H05B33/00
CPC分类号： H01L27/3279 , H01L27/322 , H01L27/3246 , H01L27/3248 , H01L27/3251 , H01L27/3258 , H01L33/50 , H01L51/5218 , H01L51/5228 , H01L51/5234 , H01L51/5253 , H01L51/5262 , H01L51/5271 , H01L2251/5315
摘要： Not all of light generated in the light emitting layer comprising the organic material are taken out in the desirable direction. For example, light emitted in the lateral direction (the direction parallel to the substrate face) is not taken out and therefore is a loss. An object of the present invention is to provide a light emitting device structured so as to increase the amount of light which is taken out in a certain direction after emitted from a light emitting element, as well as a method of manufacturing this light emitting device.In the present invention, an upper end portion of an insulating material 19 that covers an end portion of a first electrode 18 is formed to have a curved surface having a radius of curvature, a second electrode 23a is formed to have a slant face as going from its center portion toward its end portion along the curved surface. Light emitted from a light emitting layer comprising an organic material 20 that is formed on the second electrode 23a is reflected at the slant face of the second electrode 23a to increase the total amount of light taken out in the direction indicated by the arrow in FIG. 1A.
摘要翻译：在包含有机材料的发光层中产生的光不是全部在所期望的方向上被取出。例如，在横向（平行于基板面的方向）发出的光不被取出，因此是损失。本发明的目的在于提供一种发光装置，其特征在于，在发光元件发光后，能够增加从特定方向取出的光量，以及制造该发光元件的方法。在本发明中，覆盖第一电极18的端部的绝缘材料19的上端部形成为具有曲率半径的曲面，第二电极23a形成为具有倾斜面，如沿其弯曲表面从其中心部分向其端部延伸。从包含形成在第二电极23a上的有机材料20的发光层发射的光在第二电极23a的倾斜面被反射，以增加沿箭头所示方向取出的光的总量 1A 。

6. 发明授权

US08497628B2 Light emitting device and manufacturing method of the same 有权
标题翻译：发光器件及其制造方法相同
公开(公告)号：US08497628B2
公开(公告)日：2013-07-30
申请号：US13279478
申请日：2011-10-24
申请人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
IPC分类号： H05B33/00
CPC分类号： H01L27/3279 , H01L27/322 , H01L27/3246 , H01L27/3248 , H01L27/3251 , H01L27/3258 , H01L33/50 , H01L51/5218 , H01L51/5228 , H01L51/5234 , H01L51/5253 , H01L51/5262 , H01L51/5271 , H01L2251/5315
摘要： The present invention is directed to a light emitting device structured so as to increase the amount of light which is taken out in a certain direction after emitted from a light emitting element, and a method of manufacturing this light emitting device. An upper end portion of an insulating material 19 that covers an end portion of a first electrode 18 is formed to have a curved surface having a radius of curvature, a second electrode 23a is formed to have a slant face as going from its center portion toward its end portion along the curved surface. Light emitted from a light emitting layer comprising an organic material 20 that is formed on the second electrode 23a is reflected at the slant face of the second electrode 23a to increase the total amount of light taken out in the direction indicated by the arrow in FIG. 1A.
摘要翻译：本发明涉及一种发光装置及其制造方法，该发光装置被构造成增加从发光元件发射之后沿特定方向取出的光量。覆盖第一电极18的端部的绝缘材料19的上端部形成为具有曲率半径的曲面，第二电极23a形成为具有从其中心部朝向的倾斜面其端部沿着曲面。从包含形成在第二电极23a上的有机材料20的发光层发射的光在第二电极23a的倾斜面反射，以增加沿图1中箭头所示方向取出的光的总量。 1A。

7. 发明申请

US20120098013A1 Light Emitting Device and Manufacturing Method of the Same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20120098013A1
公开(公告)日：2012-04-26
申请号：US13279478
申请日：2011-10-24
申请人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
IPC分类号： H01L33/60
CPC分类号： H01L27/3279 , H01L27/322 , H01L27/3246 , H01L27/3248 , H01L27/3251 , H01L27/3258 , H01L33/50 , H01L51/5218 , H01L51/5228 , H01L51/5234 , H01L51/5253 , H01L51/5262 , H01L51/5271 , H01L2251/5315
摘要： The present invention is directed to a light emitting device structured so as to increase the amount of light which is taken out in a certain direction after emitted from a light emitting element, and a method of manufacturing this light emitting device. An upper end portion of an insulating material 19 that covers an end portion of a first electrode 18 is formed to have a curved surface having a radius of curvature, a second electrode 23a is formed to have a slant face as going from its center portion toward its end portion along the curved surface. Light emitted from a light emitting layer comprising an organic material 20 that is formed on the second electrode 23a is reflected at the slant face of the second electrode 23a to increase the total amount of light taken out in the direction indicated by the arrow in FIG. 1A.
摘要翻译：本发明涉及一种发光装置及其制造方法，该发光装置被构造成增加从发光元件发射之后沿特定方向取出的光量。覆盖第一电极18的端部的绝缘材料19的上端部形成为具有曲率半径的曲面，第二电极23a形成为具有从其中心部朝向的倾斜面其端部沿着曲面。从包含形成在第二电极23a上的有机材料20的发光层发射的光在第二电极23a的倾斜面反射，以增加沿图1中箭头所示方向取出的光的总量。 1A。

8. 发明授权

US08044580B2 Light emitting device and manufacturing method of the same 有权
标题翻译：发光器件及其制造方法相同
公开(公告)号：US08044580B2
公开(公告)日：2011-10-25
申请号：US12157594
申请日：2008-06-11
申请人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
IPC分类号： H05B33/00
CPC分类号： H01L27/3279 , H01L27/322 , H01L27/3246 , H01L27/3248 , H01L27/3251 , H01L27/3258 , H01L33/50 , H01L51/5218 , H01L51/5228 , H01L51/5234 , H01L51/5253 , H01L51/5262 , H01L51/5271 , H01L2251/5315
摘要： A light emitting device structure is provided so as to increase the amount of light which is taken out in a certain direction after emitted from a light emitting element, as well as a method of manufacturing this light emitting device. In the present invention, an upper end portion of an insulating material 19 that covers an end portion of a first electrode 18 is formed to have a curved surface having a radius of curvature, a second electrode 23a is formed to have a slant face as going from its center portion toward its end portion along the curved surface. Light emitted from a light emitting layer having an organic material 20 that is formed on the second electrode 23a is reflected at the slant face of the second electrode 23a to increase the total amount of light taken out in the direction.
摘要翻译：提供了一种发光器件结构，以便增加从发光元件发射之后沿特定方向取出的光量以及制造该发光器件的方法。在本发明中，覆盖第一电极18的端部的绝缘材料19的上端部形成为具有曲率半径的曲面，第二电极23a形成为具有倾斜面从其中心部分沿其弯曲表面朝向其端部。从具有形成在第二电极23a上的有机材料20的发光层发出的光在第二电极23a的倾斜面反射，以增加沿该方向取出的光的总量。

9. 发明申请

US20100181592A1 Semiconductor Device and Method of Manufacturing Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100181592A1
公开(公告)日：2010-07-22
申请号：US12750325
申请日：2010-03-30
申请人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
IPC分类号： H01L33/46
CPC分类号： H01L51/5209 , G01J1/4228 , H01L25/167 , H01L27/3206 , H01L27/3211 , H01L27/322 , H01L27/3244 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L33/0041 , H01L51/0096 , H01L51/5206 , H01L51/5218 , H01L51/5221 , H01L51/5234 , H01L51/524 , H01L51/5271 , H01L51/529 , H01L51/56 , H01L2227/323 , H01L2251/5315
摘要： A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction.
摘要翻译：在半导体基板上形成FET，在绝缘体的上端形成具有曲率半径的曲面，第一电极的一部分相对于曲面露出，形成倾斜面，对发光区域进行蚀刻以暴露第一电极。从有机化合物层发出的发光由第一电极的倾斜表面反射，以增加沿某一方向取出的发光总量。

10. 发明申请

US20090298377A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20090298377A1
公开(公告)日：2009-12-03
申请号：US12538563
申请日：2009-08-10
申请人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
IPC分类号： H01J9/02
CPC分类号： H01L27/3206 , H01L27/322 , H01L27/3246 , H01L27/3276 , H01L51/5209 , H01L51/5218 , H01L51/5221 , H01L51/5228 , H01L51/5234 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/5271 , H01L2251/5315
摘要： All lights generated in an organic compound layer are not taken out towards a TFT from a cathode as a transparent electrode. For instance, the light is emitted in a lateral direction (direction parallel to the substrate surface) but the light emitted in the lateral direction is not taken out resultantly, which leads to a loss. Therefore, a light emitting device structured so as to increase the amount of light taken out in a certain direction is provided as well as a method of manufacturing this light emitting device. As a result of etching treatment, an upper edge portion of an insulator (19) is curved to have a radius of curvature, a slope is formed along the curved face while partially exposing layers (18c and 18d) of a first electrode, and a layer (18b) of the first electrode is exposed in a region that serves as a light emitting region. Light emitted from an organic compound layer (20) is reflected by the slope of the first electrode (layers 18c and 18d) to increase the total amount of light taken out in the direction indicated by the arrow in FIG. 1A.
摘要翻译：在有机化合物层中产生的所有光不从作为透明电极的阴极朝向TFT取出。例如，光在横向方向（平行于基板表面的方向）发射，但是在横向方向上发射的光不会被取出，导致损失。因此，提供了构造成增加沿某一方向取出的光量的发光器件以及制造该发光器件的方法。作为蚀刻处理的结果，绝缘体（19）的上边缘部分被弯曲成具有曲率半径，沿着弯曲面形成斜面，同时部分地暴露第一电极的层（18c和18d），并且第一电极的层（18b）暴露在用作发光区域的区域中。从有机化合物层（20）发射的光被第一电极（层18c和18d）的斜率反射，以增加沿图1中箭头所示方向取出的光的总量。 1A。

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