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1. 发明授权

US10257884B2 Semiconductor device and heating system 有权
公开(公告)号：US10257884B2
公开(公告)日：2019-04-09
申请号：US12207112
申请日：2008-09-09
申请人： Hideaki Kuwabara
发明人： Hideaki Kuwabara
IPC分类号： H05B1/02
摘要： A device that warms a surface of a living body required to be warmed at an appropriate timing at any place indoors and outdoors or the sea without causing low temperature burns. A sheet having a heat generating function including a circuit capable of receiving electric power without contact over a sheet containing plastic or a fibrous body, a heat generating circuit, and a circuit that controls the temperature of the heat generating circuit is manufactured. The user with the sheet transmits the radio signal from the transmission device outdoors or indoors to heat the heat generating circuit on the sheet and the heat can be conducted to the skin of the user. Temperature can be automatically adjusted by the circuit for controlling the temperature of the heat generating circuit.

2. 发明授权

US09057924B2 Liquid crystal display device 有权
公开(公告)号：US09057924B2
公开(公告)日：2015-06-16
申请号：US12213728
申请日：2008-06-24
申请人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
发明人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/67
摘要： An object is to propose a method of manufacturing, with high mass productivity, liquid crystal display devices having thin film transistors with highly reliable electric characteristics. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

3. 发明授权

US09054206B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US09054206B2
公开(公告)日：2015-06-09
申请号：US12222109
申请日：2008-08-01
申请人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Foruno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Foruno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
IPC分类号： H01L21/84 , H01L29/786 , H01L29/04 , H01L29/417 , H01L29/49 , H01L29/66 , H01L21/02 , H01L21/67 , H01L27/12
CPC分类号： H01L29/78696 , H01L21/02532 , H01L21/0262 , H01L21/67207 , H01L27/1288 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78678
摘要： After a gate insulating film is formed over a gate electrode, in order to improve the quality of a microcrystalline semiconductor film which is formed in an early stage of deposition, a film near an interface with the gate insulating film is formed under a first deposition condition in which a deposition rate is low but the quality of a film to be formed is high, and then, a film is further deposited under a second deposition condition in which a deposition rate is high. Then, a buffer layer is formed to be in contact with the microcrystalline semiconductor film. Further, plasma treatment with a rare gas such as argon or hydrogen plasma treatment is performed before formation of the film under the first deposition condition for removing adsorbed water on a substrate.

4. 发明授权

US08921858B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08921858B2
公开(公告)日：2014-12-30
申请号：US12213733
申请日：2008-06-24
申请人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hidekazu Miyairi
发明人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hidekazu Miyairi
IPC分类号： H01L29/04 , H01L29/786 , H01L29/66 , H01L29/49 , H01L29/417
CPC分类号： H01L29/78696 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765
摘要： In a light-emitting device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
摘要翻译：在具有反交错薄膜晶体管的发光器件中，反交错薄膜晶体管形成如下：在栅电极上形成栅极绝缘膜; 在栅绝缘膜上形成用作沟道形成区的微晶半导体膜; 在微晶半导体膜上形成缓冲层; 在缓冲层上形成一对源极和漏极区; 并且形成与源区和漏区接触的一对源电极和漏电极，以便露出源区和漏区的一部分。

5. 发明授权

US08643018B2 Semiconductor device comprising a pixel portion and a driver circuit 有权
标题翻译：半导体器件包括像素部分和驱动器电路
公开(公告)号：US08643018B2
公开(公告)日：2014-02-04
申请号：US13616019
申请日：2012-09-14
申请人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Hideki Uochi
发明人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Hideki Uochi
IPC分类号： H01L29/04 , H01L29/10 , H01L27/14 , H01L27/12
CPC分类号： H01L27/1225 , H01L27/124 , H01L29/45
摘要： An object is to improve the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit includes a channel-etched thin film transistor for driver circuit and a driver circuit wiring formed using metal. Source and drain electrodes of the thin film transistor for the driver circuit are formed using a metal. A channel layer of the thin film transistor for the driver circuit is formed using an oxide semiconductor. The display portion includes a bottom-contact thin film transistor for a pixel and a display portion wiring formed using an oxide conductor. Source and drain electrode layers of the thin film transistor for the pixel are formed using an oxide conductor. A semiconductor layer of the thin film transistor for the pixel is formed using an oxide semiconductor.
摘要翻译：目的是提高半导体器件的开口率。半导体器件包括驱动器电路部分和在同一衬底上的显示部分（也称为像素部分）。驱动器电路包括用于驱动电路的通道蚀刻薄膜晶体管和使用金属形成的驱动电路布线。用于驱动电路的薄膜晶体管的源极和漏极由金属形成。使用氧化物半导体形成用于驱动电路的薄膜晶体管的沟道层。显示部分包括用于像素的底接触薄膜晶体管和使用氧化物导体形成的显示部分布线。用于像素的薄膜晶体管的源极和漏极电极层使用氧化物导体形成。使用氧化物半导体形成用于像素的薄膜晶体管的半导体层。

6. 发明授权

US08519619B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08519619B2
公开(公告)日：2013-08-27
申请号：US13234416
申请日：2011-09-16
申请人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L27/3206 , H01L27/322 , H01L27/3246 , H01L27/3276 , H01L51/5209 , H01L51/5218 , H01L51/5221 , H01L51/5228 , H01L51/5234 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/5271 , H01L2251/5315
摘要： A light-emitting device structured so as to increase the amount of light taken out in a certain direction is provided as well as a method of manufacturing this light emitting device. As a result of etching treatment, an upper edge portion of an insulator (19) is curved to have a radius of curvature, a slope is formed along the curved face while partially exposing layers (18c and 18d) of a first electrode, and a layer (18b) of the first electrode is exposed in a region that serves as a light emitting region. Light emitted from an organic compound layer (20) is reflected by the slope of the first electrode (layers 18c and 18d) to increase the total amount of light taken out in the direction indicated by the arrow in FIG. 1A.
摘要翻译：提供了一种构造为增加沿一定方向取出的光量的发光器件以及制造该发光器件的方法。作为蚀刻处理的结果，绝缘体（19）的上边缘部分被弯曲成具有曲率半径，沿着弯曲面形成斜面，同时部分地暴露第一电极的层（18c和18d），并且第一电极的层（18b）暴露在用作发光区域的区域中。从有机化合物层（20）发射的光被第一电极（层18c和18d）的斜率反射，以增加沿图1中箭头所示方向取出的光的总量。 1A。

7. 发明授权

US08456382B2 Light emitting device, driving support system, and helmet 有权
标题翻译：发光装置，驾驶辅助系统和头盔
公开(公告)号：US08456382B2
公开(公告)日：2013-06-04
申请号：US12572368
申请日：2009-10-02
申请人： Shunpei Yamazaki , Jun Koyama , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hideaki Kuwabara
IPC分类号： G09G5/00
CPC分类号： G02B27/01 , B60K28/06 , B60W30/095 , B60W40/02 , B60W40/08 , B60W50/14 , B60W2540/22 , B60W2550/402 , G01C21/365 , G02B5/30 , G02B27/017 , G02B27/0172 , H01L27/3244 , H01L51/5281 , H01L2251/5323
摘要： It is an object to provide a driving support system and a display device suitable for the driving support system. According to the driving support system, change in driver's mental and physical conditions can be caught instantaneously and a warning light emission display is given within the forward sight of the driver in order to call the driver's attention. A light emitting device of the driving support system can display a far side of the display. A display may be switched between a transmission mode and a non-transmission mode by adjusting a movable polarizer.
摘要翻译：本发明的目的是提供一种适于驾驶支持系统的驾驶支持系统和显示装置。根据驾驶辅助系统，驾驶员的身体和身体状况的改变可以立即被抓住，并在司机的前方看到警告发光显示，以引起驾驶员的注意。驱动支撑系统的发光装置可以显示显示器的远侧。可以通过调节可动偏振器在显示器在传输模式和非传输模式之间切换。

8. 发明授权

US08441102B2 Semiconductor device having a capacitor 有权
标题翻译：具有电容器的半导体器件
公开(公告)号：US08441102B2
公开(公告)日：2013-05-14
申请号：US13234639
申请日：2011-09-16
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Yuugo Goto , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Yuugo Goto , Hideaki Kuwabara
IPC分类号： H01L29/00 , H01L23/48 , H01L29/40
CPC分类号： H01L21/6835 , H01L23/5385 , H01L23/5388 , H01L24/48 , H01L24/73 , H01L24/81 , H01L27/0688 , H01L27/12 , H01L29/66757 , H01L2221/68354 , H01L2221/68359 , H01L2221/68363 , H01L2221/68368 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/81801 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01055 , H01L2924/01056 , H01L2924/0106 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/10253 , H01L2924/12034 , H01L2924/12042 , H01L2924/13063 , H01L2924/13064 , H01L2924/14 , H01L2924/1423 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/3011 , H03H3/08 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： It is an object to provide a semiconductor device integrating various elements without using a semiconductor substrate, and a method of manufacturing the same. According to the present invention, a layer to be separated including an inductor, a capacitor, a resistor element, a TFT element, an embedded wiring and the like, is formed over a substrate, separated from the substrate, and transferred onto a circuit board 100. An electrical conduction with a wiring pattern 114 provided in the circuit board 100 is made by a wire 112 or a solder 107, thereby forming a high frequency module or the like.
摘要翻译：本发明的目的是提供一种在不使用半导体衬底的情况下集成各种元件的半导体器件及其制造方法。根据本发明，在与衬底分离的衬底上形成包括电感器，电容器，电阻元件，TFT元件，嵌入布线等的待分离层，并转移到电路板通过线112或焊料107与设置在电路板100中的布线图案114进行导电，从而形成高频模块等。

9. 发明授权

US08421069B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08421069B2
公开(公告)日：2013-04-16
申请号：US12904579
申请日：2010-10-14
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L29/10 , H01L29/12 , H01L29/04 , H01L31/00 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L29/7869 , H01L21/84 , H01L23/552 , H01L23/60 , H01L23/66 , H01L25/16 , H01L27/0222 , H01L27/10873 , H01L27/12 , H01L27/1225 , H01L28/20 , H01L28/60 , H01L29/78609 , H01L2223/6677 , H01L2924/0002 , H01L2924/00
摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized.
摘要翻译：目的是减少用于LSI，CPU或存储器的晶体管的漏电流和寄生电容。包括在LSI，CPU或存储器中的半导体集成电路使用使用氧化物半导体形成的晶体管来制造，所述氧化物半导体是通过从作为电子给体（供体）中除去作为电子给体（供体）的杂质而获得的内在或本质上的半导体氧化物半导体，并且具有比硅半导体更大的能隙，并且形成在半导体衬底上。通过形成在半导体衬底上的晶体管，并且包括具有充分降低的氢浓度的高度净化的氧化物半导体层，可以实现其由漏电流引起的功率消耗低的半导体器件。

10. 发明授权

US08420441B2 Method for manufacturing oxide semiconductor device 有权
标题翻译：氧化物半导体器件的制造方法
公开(公告)号：US08420441B2
公开(公告)日：2013-04-16
申请号：US12846585
申请日：2010-07-29
申请人： Shunpei Yamazaki , Junichiro Sakata , Hiroki Ohara , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Junichiro Sakata , Hiroki Ohara , Hideaki Kuwabara
IPC分类号： H01L21/00
CPC分类号： H01L27/3262 , G06F1/163 , H01L21/02614 , H01L27/1218 , H01L27/1222 , H01L27/1225 , H01L29/04 , H01L29/24 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L29/78696 , H04B1/16
摘要： One object is to provide a semiconductor device with a structure which enables reduction in parasitic capacitance sufficiently between wirings. In a bottom-gate type thin film transistor including a stacked layer of a first layer which is a metal thin film oxidized partly or entirely and an oxide semiconductor layer, the following oxide insulating layers are formed together: an oxide insulating layer serving as a channel protective layer which is over and in contact with a part of the oxide semiconductor layer overlapping with a gate electrode layer; and an oxide insulating layer which covers a peripheral portion and a side surface of the stacked oxide semiconductor layer.
摘要翻译：一个目的是提供具有能够在布线之间充分降低寄生电容的结构的半导体器件。在包括作为部分或全部氧化的金属薄膜的第一层的堆叠层和氧化物半导体层的底栅型薄膜晶体管中，形成以下氧化物绝缘层：作为沟道的氧化物绝缘层与氧化物半导体层的与栅电极层重叠的部分结合并接触的保护层; 以及覆盖层叠的氧化物半导体层的周边部分和侧面的氧化物绝缘层。

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