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1. 发明授权

US08872330B2 Thin-film semiconductor component and component assembly 有权
标题翻译：薄膜半导体元件和元件组装
公开(公告)号：US08872330B2
公开(公告)日：2014-10-28
申请号：US12376425
申请日：2007-07-16
申请人： Siegfried Herrmann , Berthold Hahn
发明人： Siegfried Herrmann , Berthold Hahn
IPC分类号： H01L23/367 , H01L33/64 , H01L33/00 , H01L33/62 , H01L27/15 , H01L33/38
CPC分类号： H01L33/0079 , H01L27/15 , H01L33/385 , H01L33/54 , H01L33/62 , H01L33/642 , H01L33/647 , H01L2224/48091 , H01L2924/00014
摘要： A thin-film semiconductor component having a carrier layer and a layer stack which is arranged on the carrier layer, the layer stack containing a semiconductor material and being provided for emitting radiation, wherein a heat dissipating layer provided for cooling the semiconductor component is applied on the carrier layer. A component assembly is also disclosed.
摘要翻译：一种具有载体层和层叠体的薄膜半导体部件，其布置在载体层上，所述层叠体包含半导体材料并被设置用于发射辐射，其中设置用于冷却半导体部件的散热层被施加到载体层。还公开了一种组件组件。

2. 发明授权

US08648357B2 Radiation-emitting device 有权
标题翻译：辐射发射装置
公开(公告)号：US08648357B2
公开(公告)日：2014-02-11
申请号：US12747459
申请日：2008-12-03
申请人： Siegfried Herrmann
发明人： Siegfried Herrmann
IPC分类号： H01L27/15
CPC分类号： H01L27/15 , H01L25/0756 , H01L2924/0002 , H01L2924/00
摘要： A radiation-emitting device includes a first active semiconductor layer embodied for the emission of electromagnetic radiation and for direct contact with connection electrodes, and a second active semiconductor layer embodied for the emission of electromagnetic radiation and for direct contact with connection electrodes. The first active semiconductor layer and the second active semiconductor layer are arranged in a manner stacked one above another.
摘要翻译：辐射发射器件包括实现用于发射电磁辐射并用于与连接电极直接接触的第一有源半导体层以及用于发射电磁辐射并用于与连接电极直接接触的第二有源半导体层。第一有源半导体层和第二有源半导体层以彼此层叠的方式排列。

3. 发明申请

US20130274910A1 METHOD FOR CONTROLLING A PRODUCTION FACILITY BY HIGH-RESOLUTION LOCATION TRACKING OF WORKPIECES 审中-公开
标题翻译：通过高分辨率位置跟踪工件来控制生产设备的方法
公开(公告)号：US20130274910A1
公开(公告)日：2013-10-17
申请号：US13565255
申请日：2012-08-02
申请人： Willi Weingarten , Siegfried Herrmann
发明人： Willi Weingarten , Siegfried Herrmann
IPC分类号： G05B19/418
CPC分类号： G05B19/4183 , B21C37/06 , B21C51/00
摘要： A method for controlling a production facility using high-resolution location tracking of workpieces includes determining the current position of the start of the workpiece and the end of the workpiece being currently transported through the facility using position sensors and interposed displacement sensors arranged at different positions of the production facility, and measuring a length of the workpiece from a combination of at least two position sensors and at least one interposed displacement sensor or of at least two displacement sensors and at least one interposed position sensor. The physically determined positions at the various position sensors are compared with a nominal position of the workpiece calculated from the obtained measurement data, and a message is displayed and/or a test is terminated and/or the production facility is stopped when the physically determined positions exceed deviation limit values.
摘要翻译：用于使用工件的高分辨率位置跟踪来控制生产设备的方法包括：使用位置传感器确定当前工件起始位置和当前通过设施传送的工件的端部，以及布置在位置传感器以及从至少两个位置传感器和至少一个插入位移传感器或至少两个位移传感器和至少一个插入位置传感器的组合测量工件的长度。将各个位置传感器处的物理确定的位置与从获得的测量数据计算的工件的标称位置进行比较，并且当物理确定的位置显示和/或测试终止和/或停止生产设备超过偏差极限值。

4. 发明授权

US08552459B2 Radiation-emitting component and method for its manufacture 有权
标题翻译：辐射发射元件及其制造方法
公开(公告)号：US08552459B2
公开(公告)日：2013-10-08
申请号：US13129018
申请日：2009-11-05
申请人： Siegfried Herrmann , Sebastian Taeger
发明人： Siegfried Herrmann , Sebastian Taeger
IPC分类号： H01L33/00 , H01L29/08
CPC分类号： H01L33/44 , C08G61/02 , H01L24/24 , H01L24/82 , H01L33/62 , H01L2224/24051 , H01L2924/01327 , H01L2924/12036 , H01L2924/12041 , H01L2924/00
摘要： A radiation-emitting component includes a carrier, a semi-conductor chip arranged on the carrier, wherein the semi-conductor chip includes an active layer to generate electromagnetic radiation and a radiation exit surface, a first and a second contact structure for the electrical contacting of the semi-conductor chip, a first and a second contact layer, wherein the semi-conductor chip is electrically conductively connected to the first contact structure via the first contact layer and to the second contact structure via the second contact layer, a passivation layer arranged on the semi-conductor chip.
摘要翻译：辐射发射部件包括载体，布置在载体上的半导体芯片，其中半导体芯片包括产生电磁辐射的有源层和辐射出射表面，用于电接触的第一和第二接触结构所述半导体芯片具有第一和第二接触层，其中所述半导体芯片经由所述第一接触层和所述第二接触结构经由所述第二接触层导电地连接到所述第一接触结构，钝化层布置在半导体芯片上。

5. 发明申请

US20130240918A1 ELECTROLYTICALLY COATED OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT 有权
标题翻译：电光涂层光电子半导体元件和生产光电半导体元件的方法
公开(公告)号：US20130240918A1
公开(公告)日：2013-09-19
申请号：US13823726
申请日：2011-07-27
申请人： Siegfried Herrmann , Helmut Fischer
发明人： Siegfried Herrmann , Helmut Fischer
IPC分类号： H01L33/62 , H01L33/48
CPC分类号： H01L33/62 , H01L33/0079 , H01L33/38 , H01L33/48 , H01L33/486 , H01L33/647 , H01L2224/48091 , H01L2224/48247 , H01L2924/01068 , H01L2933/0016 , H01S5/0217 , H01S5/02256 , H01L2924/00014
摘要： The invention relates to an optoelectronic seminconductor component, comprising a substrate-free optoelectronic semiconductor chip (1), which has a first main surface (1a) on an upper face and a second main surface (1b) on a lower face, and a metal carrier (2), which is arranged on the lower face of the optoelectronic seminconductor chip (1), wherein the metal carrier (2) protrudes over the optoelectronic semiconductor chip (1) in at least one lateral direction (1) and the metal carrier (2) is deposited on the second main surface (1b) of the optoelectronic semiconductor chip (1) using a galvanic or electroless plating method.
摘要翻译：本发明涉及一种光电半导体元件，它包括一个无衬底的光电半导体芯片（1），它在上表面上具有第一主表面（1a），在下表面上具有第二主表面（1b）载体（2），其布置在光电半导体芯片（1）的下表面上，其中金属载体（2）在至少一个横向方向（1）上突出超过光电半导体芯片（1），并且金属载体（2）使用电镀或无电镀方法沉积在光电半导体芯片（1）的第二主表面（1b）上。

6. 发明申请

US20120248492A1 Optoelectronic Component 有权
标题翻译：光电元件
公开(公告)号：US20120248492A1
公开(公告)日：2012-10-04
申请号：US13499622
申请日：2010-08-31
申请人： Klaus Müller , Günter Spath , Siegfried Herrmann , Ewald Karl Michael Günther , Herbert Brunner
发明人： Klaus Müller , Günter Spath , Siegfried Herrmann , Ewald Karl Michael Günther , Herbert Brunner
IPC分类号： H01L33/62 , H01L33/52 , H01L31/18 , H01L31/0203
CPC分类号： H01L31/0224 , H01L25/0753 , H01L25/167 , H01L33/0079 , H01L33/486 , H01L33/54 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48471 , H01L2924/00014 , H01L2924/181 , H01L2924/00012 , H01L2224/4554
摘要： The invention relates to an optoelectronic component, having —a carrier (1) comprising a first main surface (Ia), —at least one optoelectronic semiconductor chip (2) having no substrate, and —a contact metallization (3a, 3b), wherein —the carrier (1) is electrically insulating, —the at least one optoelectronic semiconductor chip (2) is fastened to the first main surface (Ia) of the carrier (1) by means of a bonding material (4), particularly a solder material, —the contact metallization (3a, 3b) covers at least one area of the first main surface (Ia) free of the optoelectronic semiconductor chip (2), and —the contact metallization (3a, 3b) is electrically conductively connected to the optoelectronic semiconductor chip (2).
摘要翻译：本发明涉及一种具有载体（1）的光电子部件，载体（1）包括第一主表面（Ia）， - 至少一个不具有基板的光电子半导体芯片（2）和 - 接触金属化（3a，3b），其中 - 载体（1）是电绝缘的， - 至少一个光电子半导体芯片（2）通过接合材料（4）紧固到载体（1）的第一主表面（1a），特别是焊料材料， - 接触金属化（3a，3b）覆盖不含光电子半导体芯片（2）的第一主表面（1a）的至少一个区域，并且接触金属化层（3a，3b）导电地连接到光电半导体芯片（2）。

7. 发明申请

US20110089812A1 ELECTROLUMINESCENT DEVICE AND METHOD FOR PRODUCING AN ELECTROLUMINESCENT DEVICE. 有权
标题翻译：电致发光器件和用于制造电致发光器件的方法。
公开(公告)号：US20110089812A1
公开(公告)日：2011-04-21
申请号：US12922180
申请日：2009-06-17
申请人： Siegfried Herrmann
发明人： Siegfried Herrmann
IPC分类号： H01J1/62 , H05K13/00
CPC分类号： H01L33/62 , H01L33/32 , H01L33/385 , H01L2924/0002 , Y10T29/49002 , H01L2924/00
摘要： An electroluminescent device includes an inorganic luminescence diode chip having a radiation exit area, a plurality of contact webs provided to spread current and arranged on the radiation exit area, and a contact structure arranged outside the radiation exit area and electrically conductively connected to contact webs.
摘要翻译：电致发光器件包括具有辐射出射区域的无机发光二极管芯片，设置用于扩散电流并布置在辐射出射区域上的多个接触腹板，以及布置在辐射出口区域外部并且电连接到接触腹板的接触结构。

8. 发明申请

US20100133564A1 Method for Producing Semiconductor Components and Thin-Film Semiconductor Component 有权
标题翻译：生产半导体元件和薄膜半导体元件的方法
公开(公告)号：US20100133564A1
公开(公告)日：2010-06-03
申请号：US11990099
申请日：2006-08-04
申请人： Siegfried Herrmann , Berthold Hahn
发明人： Siegfried Herrmann , Berthold Hahn
IPC分类号： H01L33/00 , H01L21/20 , H01L29/02 , H01L21/30
CPC分类号： H01L21/6835 , H01L24/29 , H01L24/32 , H01L24/73 , H01L33/0079 , H01L2221/68363 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01023 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01068 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/12036 , H01L2924/181 , Y02P20/582 , H01L2924/00014 , H01L2924/00 , H01L2924/3512 , H01L2924/00012
摘要： The invention relates to a method for producing semiconductor components, wherein a layer composite (6) containing a semiconductor material is formed on a growth substrate (1), a flexible carrier layer is applied to the layer composite (6), the flexible carrier layer is cured to form a self-supporting carrier layer (2), and the growth substrate (1) is stripped away. As an alternative, the carrier layer (2) may have a base layer (2b) and an adhesion layer (2a) adhering on the layer composite.
摘要翻译：本发明涉及一种生产半导体元件的方法，其中在生长衬底（1）上形成含有半导体材料的复合层（6），将柔性载体层施加到复合层（6）上，柔性载体层固化以形成自支撑载体层（2），剥离生长衬底（1）。作为替代，载体层（2）可以具有粘附在层复合物上的基底层（2b）和粘附层（2a）。

9. 发明授权

US09281425B2 Method for producing an optoelectronic semiconductor component and such a semiconductor component 有权
标题翻译：光电子半导体元件的制造方法及其制造方法
公开(公告)号：US09281425B2
公开(公告)日：2016-03-08
申请号：US14122513
申请日：2012-05-14
申请人： Siegfried Herrmann
发明人： Siegfried Herrmann
IPC分类号： H01L31/0236 , H01L33/22 , H01L21/00 , H01L27/146 , H01L33/62 , H01L23/00 , H01L31/18 , H01L25/075 , H01L33/48
CPC分类号： H01L31/0236 , H01L24/18 , H01L24/19 , H01L24/24 , H01L24/82 , H01L24/96 , H01L25/0753 , H01L31/18 , H01L33/22 , H01L33/48 , H01L33/486 , H01L33/62 , H01L2224/04105 , H01L2224/24137 , H01L2224/92144 , H01L2924/10158 , H01L2924/12036 , H01L2924/12042 , H01L2924/15787 , H01L2933/0033 , H01L2933/0066 , H01L2924/00
摘要： A method for producing a semiconductor component is disclosed. A carrier substrate includes a mounting region and an opening, which is formed in the mounting region of the carrier substrate. After mounting a semiconductor chip, an electrically insulating layer is applied to the carrier substrate in such a way that the electrically insulating layer completely fills the first opening in the carrier substrate. A second opening is formed in the electrically insulating layer. An electrically conductive layer is then applied to the electrically insulating layer in such a way that the second opening is filled with the electrically conductive layer in the form of a via. A semiconductor component produced in this way is also provided.
摘要翻译：公开了一种制造半导体部件的方法。载体基板包括形成在载体基板的安装区域中的安装区域和开口。在安装半导体芯片之后，将电绝缘层以使得电绝缘层完全填充载体基板中的第一开口的方式施加到载体基板。在电绝缘层中形成第二开口。然后将导电层施加到电绝缘层，使得第二开口以通孔的形式填充导电层。也提供了以这种方式制造的半导体部件。

10. 发明申请

US20140051194A1 METHOD OF PRODUCING AT LEAST ONE OPTOELECTRONIC SEMICONDUCTOR CHIP 有权
标题翻译：生产至少一个光电半导体芯片的方法
公开(公告)号：US20140051194A1
公开(公告)日：2014-02-20
申请号：US14004442
申请日：2012-03-12
申请人： Siegfried Herrmann , Stefan Illek
发明人： Siegfried Herrmann , Stefan Illek
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L24/19 , H01L33/007 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/44 , H01L33/46 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01S5/0201 , H01S5/0217 , H01S5/0224 , H01S5/32341 , H01L2924/00
摘要： A method of producing at least one optoelectronic semiconductor chip includes providing at least one optoelectronic structure, including a growth support and a semiconductor layer sequence with an active region, the semiconductor layer sequence being deposited epitaxially on the growth support, providing a carrier, applying the at least one optoelectronic structure onto the carrier with its side remote from the growth support, coating the at least one optoelectronic structure with a protective material, the protective material covering the outer face, remote from the carrier, of the growth support and side faces of the growth support and of the semiconductor layer sequence, and detaching the growth support from the semiconductor layer sequence of the at least one optoelectronic structure.
摘要翻译：一种制造至少一个光电子半导体芯片的方法包括：提供至少一个光电结构，包括生长支持体和具有有源区域的半导体层序列，半导体层序列外延地沉积在生长支持体上，提供载体，至少一个光电结构到其载体上，其侧面远离生长载体，用保护材料涂覆至少一个光电结构，该保护材料覆盖远离载体的生长载体和侧面的外表面生长支持物和半导体层序列，以及从至少一个光电子结构的半导体层序列分离生长支持物。

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