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1. 发明申请

US20190342514A1 SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS 审中-公开
公开(公告)号：US20190342514A1
公开(公告)日：2019-11-07
申请号：US16516832
申请日：2019-07-19
申请人： Sony Corporation
发明人： Hideo Kido , Atsuhiko Yamamoto , Akihiro Yamada
IPC分类号： H04N5/378 , H01L27/146 , H01L27/148 , H04N5/3745 , H04N5/374 , H04N5/376
摘要： A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reversed or/and vertically crossed, and connection wirings connected to a floating diffusion portion, a source of a reset transistor and a gate of an amplification transistor in the shared pixels are arranged along the column direction.

2. 发明授权

US10397509B2 Solid-state imaging device and electronic apparatus 有权
公开(公告)号：US10397509B2
公开(公告)日：2019-08-27
申请号：US15714232
申请日：2017-09-25
申请人： Sony Corporation
发明人： Hideo Kido , Atsuhiko Yamamoto , Akihiro Yamada
IPC分类号： H04N5/378 , H04N5/374 , H04N5/376 , H01L27/146 , H01L27/148 , H04N5/3745
摘要： A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reversed or/and vertically crossed, and connection wirings connected to a floating diffusion portion, a source of a reset transistor and a gate of an amplification transistor in the shared pixels are arranged along the column direction.

3. 发明授权

US09673235B2 Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic device 有权
公开(公告)号：US09673235B2
公开(公告)日：2017-06-06
申请号：US15084287
申请日：2016-03-29
申请人： SONY CORPORATION
发明人： Takeshi Yanagita , Itaru Oshiyama , Takayuki Enomoto , Harumi Ikeda , Shinichiro Izawa , Atsuhiko Yamamoto , Kazunobu Ota
IPC分类号： H01L27/146
CPC分类号： H01L27/146 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14645 , H01L27/14685 , H01L27/14689
摘要： The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate 12 and multiple photoelectric converters 40 that are formed on the substrate 12, an insulating film 21 forms an embedded element separating unit 19. The element separating unit 19 is configured of an insulating film 20 having a fixed charge that is formed so as to coat the inner wall face of a groove portion 30, within the groove portion 30 which is formed in the depth direction from the light input side of the substrate 12.

4. 发明授权

US09666617B2 Imaging device, electronic apparatus, and method of manufacturing imaging device 有权
公开(公告)号：US09666617B2
公开(公告)日：2017-05-30
申请号：US15282826
申请日：2016-09-30
申请人： Sony Corporation
发明人： Harumi Ikeda , Atsuhiko Yamamoto , Yoshiki Ebiko , Takeshi Yanagita
IPC分类号： H01L27/146 , H04N5/378
CPC分类号： H01L27/14607 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14645 , H01L27/14689 , H04N5/378
摘要： An imaging device includes: a photodiode configured to perform photoelectric conversion and to generate electric charge in accordance with an amount of received light; a floating diffusion section configured to accumulate the electric charge generated in the photodiode; a reading circuit configured to output a pixel signal having a voltage in accordance with a level of the electric charge accumulated in the floating diffusion section, the reading circuit including one or a plurality of transistors each having a gate that is electrically connected to a wiring used for selecting a pixel; and an insulating section extending into part or whole of a bottom surface of the floating diffusion section, part or whole of bottom surfaces of source-drain regions in the one or the plurality of transistors, or both. The photodiode, the floating diffusion section, the reading circuit, and the insulating section are provided in a semiconductor layer.

5. 发明授权

US09647026B2 Solid-state image pickup device, method of manufacturing the same, and electronic apparatus 有权
公开(公告)号：US09647026B2
公开(公告)日：2017-05-09
申请号：US14449825
申请日：2014-08-01
申请人： Sony Corporation
发明人： Yoshiki Ebiko , Atsuhiko Yamamoto , Yasushi Tateshita , Hiromi Okazaki
IPC分类号： H01L21/00 , H01L27/146
CPC分类号： H01L27/14685 , H01L27/14629 , H01L27/1463
摘要： A solid-state image pickup device, including: a plurality of pixels; a separation structure provided along a boundary line adjacent to the plurality of pixels; the separation structure includes a groove provided from a back surface of the semiconductor substrate to a depth corresponding to a wavelength, the groove being positioned along the boundary line, a first separation layer provided in the groove, and a second separation layer provided above the first separation layer and corresponding to the boundary line, the second separation layer being connected to the first separation layer; and methods including the same.

6. 发明授权

US09521350B2 Solid-state imaging device and electronic apparatus 有权
公开(公告)号：US09521350B2
公开(公告)日：2016-12-13
申请号：US14983111
申请日：2015-12-29
申请人： Sony Corporation
发明人： Hideo Kido , Atsuhiko Yamamoto , Akihiro Yamada
IPC分类号： H04N5/378 , H01L27/146 , H04N5/376 , H04N5/374 , H04N5/3745 , H01L27/148
CPC分类号： H04N5/378 , H01L27/14603 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/14625 , H01L27/14636 , H01L27/14641 , H01L27/14643 , H01L27/148 , H04N5/3742 , H04N5/3745 , H04N5/3765
摘要： A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reversed or/and vertically crossed, and connection wirings connected to a floating diffusion portion, a source of a reset transistor and a gate of an amplification transistor in the shared pixels are arranged along the column direction.

7. 发明授权

US09478569B2 Solid-state imaging device and electronic device 有权
标题翻译：固态成像装置和电子装置
公开(公告)号：US09478569B2
公开(公告)日：2016-10-25
申请号：US14512200
申请日：2014-10-10
申请人： Sony Corporation
发明人： Yusuke Uesaka , Atsuhiko Yamamoto
IPC分类号： H01L27/14 , H01L21/00 , H01L27/146
CPC分类号： H01L27/14603 , H01L27/14643
摘要： The present invention relates to a solid-state imaging device. In a pixel array section in the solid-state imaging device, a vertical signal line is provided right under power supply wiring apart from a floating diffusion region in order to reduce load capacitance of the vertical signal line. Furthermore, the power supply wiring is wired to make a cover rate of each vertical signal line with respect to the power supply wiring nearly uniform. As a result, it is possible to suppress variation of load capacitance of the vertical signal line for each pixel. It becomes possible to suppress deviation in a black level, variation of charge transfer, and variation of settling. It becomes possible to obtain an image with higher quality.
摘要翻译：本发明涉及一种固态成像装置。在固态成像装置的像素阵列部分中，垂直信号线设置在与浮动扩散区域分开的电源布线的正下方，以减小垂直信号线的负载电容。此外，电源布线被布线以使得相对于电源布线的每个垂直信号线的覆盖率几乎均匀。结果，可以抑制每个像素的垂直信号线的负载电容的变化。可以抑制黑色电平的偏差，电荷转移的变化和沉降的变化。可以获得更高质量的图像。

8. 发明申请

US20160112664A1 SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS 审中-公开
公开(公告)号：US20160112664A1
公开(公告)日：2016-04-21
申请号：US14983111
申请日：2015-12-29
申请人： Sony Corporation
发明人： Hideo Kido , Atsuhiko Yamamoto , Akihiro Yamada
IPC分类号： H04N5/378 , H01L27/146 , H04N5/376 , H04N5/374 , H04N5/3745
CPC分类号： H04N5/378 , H01L27/14603 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/14625 , H01L27/14636 , H01L27/14641 , H01L27/14643 , H01L27/148 , H04N5/3742 , H04N5/3745 , H04N5/3765
摘要： A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reversed or/and vertically crossed, and connection wirings connected to a floating diffusion portion, a source of a reset transistor and a gate of an amplification transistor in the shared pixels are arranged along the column direction.

9. 发明授权

US09787933B2 Solid-state imaging device and electronic apparatus 有权
公开(公告)号：US09787933B2
公开(公告)日：2017-10-10
申请号：US15366887
申请日：2016-12-01
申请人： Sony Corporation
发明人： Hideo Kido , Atsuhiko Yamamoto , Akihiro Yamada
IPC分类号： H04N5/378 , H04N5/376 , H01L27/146 , H04N5/3745 , H04N5/374 , H01L27/148
CPC分类号： H04N5/378 , H01L27/14603 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/14625 , H01L27/14636 , H01L27/14641 , H01L27/14643 , H01L27/148 , H04N5/3742 , H04N5/3745 , H04N5/3765
摘要： A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reversed or/and vertically crossed, and connection wirings connected to a floating diffusion portion, a source of a reset transistor and a gate of an amplification transistor in the shared pixels are arranged along the column direction.

10. 发明申请

US20170018585A1 SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE 审中-公开
标题翻译：固态成像装置和电子装置
公开(公告)号：US20170018585A1
公开(公告)日：2017-01-19
申请号：US15277812
申请日：2016-09-27
申请人： Sony Corporation
发明人： Yusuke Uesaka , Atsuhiko Yamamoto
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14643
摘要： The present invention relates to a solid-state imaging device. In a pixel array section in the solid-state imaging device, a vertical signal line is provided right under power supply wiring apart from a floating diffusion region in order to reduce load capacitance of the vertical signal line. Furthermore, the power supply wiring is wired to make a cover rate of each vertical signal line with respect to the power supply wiring nearly uniform. As a result, it is possible to suppress variation of load capacitance of the vertical signal line for each pixel. It becomes possible to suppress deviation in a black level, variation of charge transfer, and variation of settling. It becomes possible to obtain an image with higher quality.
摘要翻译：本发明涉及一种固态成像装置。在固态成像装置的像素阵列部分中，垂直信号线设置在与浮动扩散区域分开的电源布线的正下方，以减小垂直信号线的负载电容。此外，电源布线被布线以使得相对于电源布线的每个垂直信号线的覆盖率几乎均匀。结果，可以抑制每个像素的垂直信号线的负载电容的变化。可以抑制黑色电平的偏差，电荷转移的变化和沉降的变化。可以获得更高质量的图像。

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