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1. 发明授权

US11355533B2 Solid-state imaging device, method of manufacturing the same, and imaging apparatus 有权
公开(公告)号：US11355533B2
公开(公告)日：2022-06-07
申请号：US15645604
申请日：2017-07-10
申请人： Sony Corporation
发明人： Takuji Matsumoto , Keiji Tatani , Tetsuji Yamaguchi , Masashi Nakata
IPC分类号： H01L27/146
摘要： A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a voltage, and an element isolation region which is disposed on the semiconductor substrate and which isolates the photoelectric conversion section from an active region in which the pixel transistor section is disposed. The pixel transistor section includes a plurality of transistors. Among the plurality of transistors, in at least one transistor in which the gate width direction of its gate electrode is oriented toward the photoelectric conversion section, at least a photoelectric conversion section side portion of the gate electrode is disposed within and on the active region with a gate insulating film therebetween.

2. 发明授权

US11127771B2 Solid-state imaging device, method of manufacturing the same, and electronic apparatus 有权
公开(公告)号：US11127771B2
公开(公告)日：2021-09-21
申请号：US16169735
申请日：2018-10-24
申请人： SONY CORPORATION
发明人： Yusuke Tanaka , Toshifumi Wakano , Keiji Tatani , Takashi Nagano , Hayato Iwamoto , Keiichi Nakazawa , Tomoyuki Hirano , Shinpei Yamaguchi , Shunsuke Maruyama
IPC分类号： H01L27/148 , H01L27/146
摘要： Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.

3. 发明授权

US10090343B2 Solid-state imaging device and method for manufacturing solid-state imaging device, and electronic device 有权
公开(公告)号：US10090343B2
公开(公告)日：2018-10-02
申请号：US15337291
申请日：2016-10-28
申请人： Sony Corporation
发明人： Keiji Tatani , Fumihiko Koga , Takashi Nagano
IPC分类号： H01L27/148 , H01L27/146
摘要： A solid-state imaging device includes a first-conductivity-type semiconductor well region, a plurality of pixels each of which is formed on the semiconductor well region and is composed of a photoelectric conversion portion and a pixel transistor, an element isolation region provided between the pixels and in the pixels, and an element isolation region being free from an insulation film and being provided between desired pixel transistors.

4. 发明授权

US10008523B2 Semiconductor device, method of manufacturing semiconductor device, and solid-state imaging apparatus 有权
公开(公告)号：US10008523B2
公开(公告)日：2018-06-26
申请号：US15094530
申请日：2016-04-08
申请人： Sony Corporation
发明人： Keiji Tatani
IPC分类号： H01L27/146
CPC分类号： H01L27/14605 , H01L27/14603 , H01L27/1461 , H01L27/14612 , H01L27/1463 , H01L27/14636 , H01L27/14645 , H01L27/14689
摘要： A semiconductor device includes a gate electrode formed on a substrate with a gate insulating layer in between, an insulating layer of property and thickness that allow for a silicide block formed in a first region of the substrate so as to cover the gate electrode, a sidewall formed to at least partly include the insulating layer at a side of the gate electrode, a first impurity region formed by implantation of a first impurity in a peripheral region of the gate electrode formed in the first region of the substrate before the insulating layer is formed, a second impurity region formed by implantation of a second impurity in a peripheral region of the sidewall of the gate electrode formed in a second region of the substrate after the sidewall is formed, and a silicide layer formed on a surface of the second impurity region of the substrate.

5. 发明申请

US20180019270A1 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS 有权
公开(公告)号：US20180019270A1
公开(公告)日：2018-01-18
申请号：US15719015
申请日：2017-09-28
申请人： Sony Corporation
发明人： Tomoharu Ogita , Atsushi Yamamoto , Keiji Tatani , Yoichi Ootsuka , Kiyotaka Tabuchi
IPC分类号： H01L27/146 , H04N9/04 , H04N5/378 , H01L27/148
摘要： A solid-state imaging device includes pixels each having a photoelectric conversion element for converting incident light to an electric signal, color filters associated with the pixels and having a plurality of color filter components, microlenses converging the incident light through the color filters to the photoelectric conversion elements, a light shielding film disposed between the color filter components of the color filters, and a nonplanarized adhesive film provided between the color filters and the light shielding film.

6. 发明授权

US09812480B2 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus 有权
公开(公告)号：US09812480B2
公开(公告)日：2017-11-07
申请号：US15431899
申请日：2017-02-14
申请人： Sony Corporation
发明人： Tomoharu Ogita , Atsushi Yamamoto , Keiji Tatani , Yoichi Ootsuka , Kiyotaka Tabuchi
IPC分类号： H01L27/146 , H04N5/378 , H04N9/04 , H01L27/148
CPC分类号： H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14868 , H04N5/378 , H04N9/045
摘要： A solid-state imaging device includes pixels each having a photoelectric conversion element for converting incident light to an electric signal, color filters associated with the pixels and having a plurality of color filter components, microlenses converging the incident light through the color filters to the photoelectric conversion elements, a light shielding film disposed between the color filter components of the color filters, and a nonplanarized adhesive film provided between the color filters and the light shielding film.

7. 发明申请

US20160111462A1 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS 审中-公开
标题翻译：固态成像装置，制造固态成像装置的方法和电子装置
公开(公告)号：US20160111462A1
公开(公告)日：2016-04-21
申请号：US14976905
申请日：2015-12-21
申请人： Sony Corporation
发明人： Tomoharu Ogita , Atsushi Yamamoto , Keiji Tatani , Yoichi Ootsuka , Kiyotaka Tabuchi
IPC分类号： H01L27/146
CPC分类号： H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14868 , H04N5/378 , H04N9/045
摘要： An imaging device includes a plurality of photoelectric conversion elements, a plurality of color filter components having a first color filter component and a second color filter component; a light shielding portion, at least a part of which is disposed between the first and second color filter components in a cross-section view; and a transparent film, at least a first part of which is disposed between the first color filter component and the light shielding portion in the cross-section view. A surface of the transparent film facing to the first and second color filter components is nonplanar, and a thickness of the transparent film is less than a thickness of the light shielding portion.
摘要翻译：一种成像装置包括多个光电转换元件，具有第一滤色器部件和第二滤色器部件的多个滤色器部件; 光屏蔽部分，其至少一部分在横截面图中设置在第一和第二滤色器部件之间; 以及透明膜，其截面图中的至少第一部分设置在第一滤色器部件和遮光部之间。面向第一和第二滤色器部件的透明膜的表面是非平面的，并且透明膜的厚度小于遮光部分的厚度。

8. 发明授权

US09142589B2 Solid-state imaging device, method of manufacturing the same, and imaging apparatus 有权
标题翻译：固态成像装置及其制造方法和成像装置
公开(公告)号：US09142589B2
公开(公告)日：2015-09-22
申请号：US14063235
申请日：2013-10-25
申请人： Sony Corporation
发明人： Takuji Matsumoto , Keiji Tatani , Tetsuji Yamaguchi , Masashi Nakata
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/1463 , H01L27/14641 , H01L27/14643 , H01L27/14689
摘要： A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a voltage, and an element isolation region which is disposed on the semiconductor substrate and which isolates the photoelectric conversion section from an active region in which the pixel transistor section is disposed. The pixel transistor section includes a plurality of transistors. Among the plurality of transistors, in at least one transistor in which the gate width direction of its gate electrode is oriented toward the photoelectric conversion section, at least a photoelectric conversion section side portion of the gate electrode is disposed within and on the active region with a gate insulating film therebetween.
摘要翻译：一种固态成像装置，包括设置在半导体基板上并将入射光光电转换为信号电荷的光电转换部，设置在半导体基板上的像素晶体管部，其转换为从光电转换以及设置在半导体衬底上并将光电转换部分与其中设置有像素晶体管部分的有源区隔离的元件隔离区域。像素晶体管部分包括多个晶体管。在多个晶体管中，在其栅电极的栅极宽度方向朝向光电转换部的至少一个晶体管中，至少栅电极的光电转换部侧部分配置在有源区内并具有有源区，其间的栅极绝缘膜。

9. 发明申请

US20150115341A1 SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS 审中-公开
标题翻译：固态成像装置，制造固态成像装置的方法和成像装置
公开(公告)号：US20150115341A1
公开(公告)日：2015-04-30
申请号：US14590374
申请日：2015-01-06
申请人： Sony Corporation
发明人： Takuji Matsumoto , Keiji Tatani , Yasushi Tateshita , Kazuichiro Itonaga
IPC分类号： H01L27/146 , H01L29/51
CPC分类号： H01L27/14614 , H01L27/14605 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14636 , H01L27/14643 , H01L27/14645 , H01L27/14683 , H01L27/14689 , H01L29/51 , H01L29/518 , H04N5/335 , H04N5/378
摘要： A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in the peripheral circuit portion is composed of a silicon oxynitride film, a gate insulating film of aMOS transistor in the pixel portion is composed of a silicon oxynitride film, and an oxide film is disposed just above the photoelectric conversion portion in the pixel portion.
摘要翻译：固态成像装置在半导体衬底中包括设置有光电转换部分的像素部分，其对入射光进行光电转换以获得电信号，并且设置在像素部分周围的外围电路部分，其中栅极外围电路部中的MOS晶体管的绝缘膜由氮氧化硅膜构成，像素部中的MOS晶体管的栅极绝缘膜由氧氮化硅膜构成，氧化膜位于光电转换部的正上方像素部分。

10. 发明授权

US08953077B2 Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus 有权
公开(公告)号：US08953077B2
公开(公告)日：2015-02-10
申请号：US13926916
申请日：2013-06-25
申请人： Sony Corporation
发明人： Takuji Matsumoto , Keiji Tatani , Yasushi Tateshita , Kazuichiro Itonaga
IPC分类号： H04N5/335 , H01L31/062 , H01L27/146
CPC分类号： H01L27/14614 , H01L27/14605 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14636 , H01L27/14643 , H01L27/14645 , H01L27/14683 , H01L27/14689 , H01L29/51 , H01L29/518 , H04N5/335 , H04N5/378
摘要： A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in the peripheral circuit portion is composed of a silicon oxynitride film, a gate insulating film of aMOS transistor in the pixel portion is composed of a silicon oxynitride film, and an oxide film is disposed just above the photoelectric conversion portion in the pixel portion.

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