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1. 发明授权

US11527261B2 Storage element 有权
公开(公告)号：US11527261B2
公开(公告)日：2022-12-13
申请号：US17181052
申请日：2021-02-22
申请人： Sony Corporation
发明人： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
IPC分类号： G11B5/31 , H01F10/32 , G11B5/39 , G11C11/16 , H01L43/10 , H01L43/08 , H01L43/02 , G11B5/127 , H01L23/528 , H01L27/22 , H01F10/12 , B82Y25/00
摘要： A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.

2. 发明申请

US20210057010A1 STORAGE ELEMENT AND STORAGE APPARATUS 有权
公开(公告)号：US20210057010A1
公开(公告)日：2021-02-25
申请号：US17090321
申请日：2020-11-05
申请人： Sony Corporation
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： G11C11/16 , H01F10/32 , G11C11/155 , H01L43/08 , H01L27/22 , G11B5/39 , H01L43/02 , G11C11/15
摘要： A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

3. 发明申请

US20200251651A1 MEMORY ELEMENT AND MEMORY DEVICE 审中-公开
公开(公告)号：US20200251651A1
公开(公告)日：2020-08-06
申请号：US16853157
申请日：2020-04-20
申请人： Sony Corporation
发明人： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Hiroyuki Uchida , Tetsuya Asayama
IPC分类号： H01L43/10 , G11C11/16 , H01L43/08 , H01L43/02
摘要： There is disclosed an information storage element including a first layer including a ferromagnetic layer with a magnetization direction perpendicular to a film face; an insulation layer coupled to the first layer; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material, and the magnetization state is configured to be changed by a spin injection. A magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer.

4. 发明授权

US10692521B2 Storage element 有权
公开(公告)号：US10692521B2
公开(公告)日：2020-06-23
申请号：US16593687
申请日：2019-10-04
申请人： Sony Corporation
发明人： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
IPC分类号： G11B5/31 , H01F10/32 , G11B5/39 , G11C11/16 , H01L43/10 , H01L43/08 , H01L43/02 , G11B5/127 , H01L23/528 , H01L27/22 , H01F10/12 , B82Y25/00
摘要： A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.

5. 发明授权

US09917248B2 Memory element, memory apparatus 有权
公开(公告)号：US09917248B2
公开(公告)日：2018-03-13
申请号：US15371863
申请日：2016-12-07
申请人： Sony Corporation
发明人： Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Kazutaka Yamane
IPC分类号： H01L43/02 , H01L27/22 , H01L27/24 , H01L43/08 , H01L43/10 , G11B5/39 , G01R33/09 , G11C11/16 , H01L29/82
CPC分类号： H01L43/02 , G01R33/093 , G11B5/3909 , G11C11/16 , G11C11/161 , H01L27/222 , H01L27/224 , H01L27/226 , H01L27/228 , H01L27/2481 , H01L29/82 , H01L43/08 , H01L43/10
摘要： A memory element including a layered structure including a memory layer having magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information stored therein, a magnetization-fixed layer having magnetization perpendicular to the film face, which becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.

6. 发明授权

US09748470B2 Storage element and storage apparatus 有权
公开(公告)号：US09748470B2
公开(公告)日：2017-08-29
申请号：US15233468
申请日：2016-08-10
申请人： Sony Corporation
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： G11C11/14 , H01L43/02 , H01L43/08 , H01L27/22 , G11B5/39 , H01F10/32 , G11C11/155 , G11C11/16 , G11C11/15
CPC分类号： G11C11/161 , G11B5/3906 , G11B5/3909 , G11C11/15 , G11C11/155 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/02 , H01L43/08
摘要： A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

7. 发明授权

US09484528B2 Memory element and memory apparatus 有权
标题翻译：存储器元件和存储器件
公开(公告)号：US09484528B2
公开(公告)日：2016-11-01
申请号：US15095553
申请日：2016-04-11
申请人： Sony Corporation
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H01L29/82 , H01L43/10 , H01L43/08 , G11C11/16
CPC分类号： H01L43/10 , G11C11/161 , H01L27/222 , H01L27/228 , H01L29/82 , H01L43/08
摘要： A memory element includes a layered structure: a memory layer having a magnetization direction changed depending on information, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, including a first ferromagnetic layer having a magnetization direction that is inclined from a direction perpendicular to a film face, a bonding layer laminated on the first ferromagnetic layer, and a second ferromagnetic layer laminated on the bonding layer and bonded to the first ferromagnetic layer via the bonding layer, having a magnetization direction that is inclined from the direction perpendicular to the film face, a magnetization-fixed layer having a fixed magnetization direction, an intermediate layer that is provided between the memory layer and the magnetization-fixed layer, and is contacted with the first ferromagnetic layer, and a cap layer that is contacted with the second ferromagnetic layer.
摘要翻译：存储元件包括分层结构：具有根据信息改变的磁化方向的存储层，通过在分层结构的层叠方向施加电流来改变磁化方向，以将信息记录在存储层中，该信息包括第一铁磁层，其具有从垂直于膜面的方向倾斜的磁化方向，层压在所述第一铁磁层上的接合层和层压在所述接合层上并通过所述接合层接合到所述第一铁磁性层的第二铁磁层，从垂直于膜面的方向倾斜的磁化方向，具有固定的磁化方向的磁化固定层，设置在存储层和磁化固定层之间的中间层，并与第一铁磁体层和与第二铁磁体接触的盖层 c层。

8. 发明授权

US09478731B2 Storage cell, storage device, and magnetic head 有权
标题翻译：存储单元，存储设备和磁头
公开(公告)号：US09478731B2
公开(公告)日：2016-10-25
申请号：US14430065
申请日：2013-08-22
申请人： Sony Corporation
发明人： Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Kazutaka Yamane
IPC分类号： H01L43/08 , H01L43/10 , G11B5/39 , H01L43/02 , H01L27/22 , G11C11/16
CPC分类号： G11C11/161 , G11B5/3909 , G11C2213/35 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
摘要： Provided is a storage cell that makes it possible to improve TMR characteristics, a storage device and a magnetic head that include the storage cell. The storage cell includes a layer structure including a storage layer in which a direction of magnetization is varied in correspondence with information, a magnetization pinned layer having magnetization that is perpendicular to a film surface and serves as a reference of information stored in the storage layer, and an intermediate layer that is provided between the storage layer and the magnetization pinned layer and is made of a nonmagnetic body. Carbon is inserted in the intermediate layer, and feeding a current in a laminating direction of the layer structure allows the direction of magnetization in the storage layer to be varied, to allow information to be recorded in the storage layer.
摘要翻译：提供一种能够提高TMR特性的存储单元，包括存储单元的存储装置和磁头。存储单元包括：层结构，其包括存储层，其中磁化方向与信息相对应地变化，磁化固定层具有垂直于膜表面的磁化，并且用作存储在存储层中的信息的参考; 以及设置在所述存储层和所述磁化被钉扎层之间并由非磁性体制成的中间层。将碳插入中间层，并且沿着层结构的层叠方向供给电流允许存储层中的磁化方向改变，以便将信息记录在存储层中。

9. 发明授权

US09343657B2 Storage element, storage apparatus, and magnetic head 有权
标题翻译：存储元件，存储装置和磁头
公开(公告)号：US09343657B2
公开(公告)日：2016-05-17
申请号：US14429230
申请日：2013-08-09
申请人： Sony Corporation
发明人： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
IPC分类号： H01L43/08 , G11B5/39 , G11C11/16 , H01L43/10 , H01F10/32 , H01L43/02 , B82Y25/00 , H01L27/22 , H01F10/12
CPC分类号： G11B5/3146 , B82Y25/00 , G11B5/1278 , G11B5/3906 , G11B5/3909 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L23/528 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
摘要： There is provided a storage element including a layered construction including a storage layer that has magnetization perpendicular to a surface of the storage layer and whose direction of magnetization is changed corresponding to information, a pinned magnetization layer that has magnetization perpendicular to a surface of the pinned magnetization layer and serves as a standard for information stored in the storage layer, and an insulating layer that is composed of a non-magnetic material and is provided between the storage layer and the pinned magnetization layer.
摘要翻译：提供了一种存储元件，其包括层叠结构，其包括存储层，该存储层具有垂直于存储层的表面的磁化强度，并且其磁化方向根据信息而改变;具有垂直于固定的表面的磁化的钉扎磁化层并且用作存储在存储层中的信息的标准，以及由非磁性材料构成并设置在存储层和被钉扎磁化层之间的绝缘层。

10. 发明授权

US08942239B2 Router and method of supplying power to memory unit in the same 有权
标题翻译：路由器和向存储单元供电的方法
公开(公告)号：US08942239B2
公开(公告)日：2015-01-27
申请号：US13779139
申请日：2013-02-27
申请人： Sony Corporation
发明人： Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H04L12/28 , H04L12/747 , H04L12/773 , H04L12/947
CPC分类号： H04L45/742 , H04L45/60 , H04L49/25
摘要： A router, includes: a routing table memory unit configured to store a routing table and be capable of reading and writing the routing table at any time, the routing table being destination information of a packet; a search engine unit which has a transfer information base memory unit and which is configured to search for a destination of the packet based on a transfer information base; a power supply unit configured to supply power to the routing table memory unit and the transfer information base memory unit; and a control unit configured to control the power supply unit such that the power is supplied to the non-volatile memory when the non-volatile memory is operated, and the power supply is interrupted when the non-volatile memory is not operated.
摘要翻译：路由器包括：路由表存储单元，被配置为存储路由表，并且能够随时读取和写入路由表，路由表是分组的目的地信息; 搜索引擎单元，其具有传送信息库存储单元，其被配置为基于传送信息库来搜索分组的目的地; 电源单元，被配置为向所述路由表存储单元和所述传送信息库存储单元供电; 以及控制单元，被配置为控制所述电源单元，使得当所述非易失性存储器被操作时，所述电力被提供给所述非易失性存储器，并且当所述非易失性存储器未被操作时所述电源被中断。

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