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1. 发明授权

US11104109B2 Reversible recording medium and exterior member 有权
公开(公告)号：US11104109B2
公开(公告)日：2021-08-31
申请号：US16348991
申请日：2017-10-05
申请人： Sony Corporation
发明人： Kenichi Kurihara , Yuki Oishi , Yuriko Kaino , Aya Shuto , Nobukazu Hirai , Satoko Asaoka , Isao Takahashi
IPC分类号： B32B3/00 , B32B27/20 , B32B7/027 , B32B33/00 , B41M5/28 , B41M5/36 , B32B7/02 , B32B27/18
摘要： A reversible recording medium according to an embodiment of the present disclosure includes a first layer that reversibly changes between an achromatic state and a transparent state, and a second layer that reversibly changes between a chromatic state and a transparent state.

2. 发明授权

US10566523B2 Storage element and memory 有权
公开(公告)号：US10566523B2
公开(公告)日：2020-02-18
申请号：US16150874
申请日：2018-10-03
申请人： Sony Corporation
发明人： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
IPC分类号： H01L21/82 , H01L43/10 , B82Y10/00 , B82Y25/00 , H01L27/22 , H01L43/08 , H01L43/02
摘要： A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

3. 发明申请

US20190036019A1 STORAGE ELEMENT AND MEMORY 审中-公开
公开(公告)号：US20190036019A1
公开(公告)日：2019-01-31
申请号：US16150874
申请日：2018-10-03
申请人： Sony Corporation
发明人： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
IPC分类号： H01L43/10 , H01L43/08 , B82Y10/00 , H01L43/02 , H01L27/22 , B82Y25/00
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , H01L27/228 , H01L43/02 , H01L43/08
摘要： A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

4. 发明授权

US10128436B2 Storage element and memory 有权
公开(公告)号：US10128436B2
公开(公告)日：2018-11-13
申请号：US15933512
申请日：2018-03-23
申请人： Sony Corporation
发明人： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
IPC分类号： H01L43/00 , H01L43/10 , H01L43/08 , B82Y10/00 , B82Y25/00 , H01L27/22 , H01L43/02
摘要： A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

5. 发明授权

US10121963B2 Storage element and memory 有权
公开(公告)号：US10121963B2
公开(公告)日：2018-11-06
申请号：US15667750
申请日：2017-08-03
申请人： Sony Corporation
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Tetsuya Yamamoto , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
IPC分类号： H01L43/10 , G11C11/16 , H01F41/32 , H01F10/32 , B82Y25/00 , H01L43/08 , H01L43/02 , H01L27/22
摘要： A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

6. 发明申请

US20140264674A1 STORAGE ELEMENT AND MEMORY 有权
标题翻译：存储元素和存储器
公开(公告)号：US20140264674A1
公开(公告)日：2014-09-18
申请号：US14288005
申请日：2014-05-27
申请人： Sony Corporation
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Tetsuya Yamamoto , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
IPC分类号： H01L43/02
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/329 , H01F41/325 , H01L27/228 , H01L43/02 , H01L43/08
摘要： A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.
摘要翻译：存储元件包括存储层，固定磁化层，自旋势垒层和自旋吸收层。存储层基于磁性材料的磁化状态存储信息。通过隧道绝缘层为存储层提供固定磁化层。自旋势垒层抑制自旋极化电子的扩散，并且设置在与固定磁化层相对的存储层侧。自旋吸收层由引起自旋泵送的非磁性金属层形成，并且设置在与存储层相对的自旋阻挡层的一侧。存储层中的磁化方向通过在分层方向上传递电流而改变以注入自旋极化电子，使得信息被记录在存储层中，并且自旋阻挡层至少包括选自氧化物，氮化物和氟化物的材料。

7. 发明授权

US10862024B2 Storage element and memory 有权
公开(公告)号：US10862024B2
公开(公告)日：2020-12-08
申请号：US16654596
申请日：2019-10-16
申请人： Sony Corporation
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Tetsuya Yamamoto , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
IPC分类号： H01L43/10 , H01F10/32 , H01F41/32 , B82Y25/00 , H01L43/08 , G11C11/16 , H01L43/02 , H01L27/22
摘要： A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

8. 发明申请

US20200052195A1 STORAGE ELEMENT AND MEMORY 审中-公开
公开(公告)号：US20200052195A1
公开(公告)日：2020-02-13
申请号：US16654596
申请日：2019-10-16
申请人： Sony Corporation
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Tetsuya Yamamoto , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
IPC分类号： H01L43/10 , G11C11/16 , H01L43/02 , H01L43/08 , H01F10/32 , B82Y25/00 , H01F41/32
摘要： A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

9. 发明申请

US20190270290A1 REVERSIBLE RECORDING MEDIUM AND EXTERIOR MEMBER 审中-公开
公开(公告)号：US20190270290A1
公开(公告)日：2019-09-05
申请号：US16348991
申请日：2017-10-05
申请人： Sony Corporation
发明人： Kenichi Kurihara , Yuki Oishi , Yuriko Kaino , Aya Shuto , Nobukazu Hirai , Satoko Asaoka , Isao Takahashi
IPC分类号： B32B27/20 , B32B33/00 , B32B7/027 , B41M5/28 , B41M5/36
摘要： A reversible recording medium according to an embodiment of the present disclosure includes a first layer that reversibly changes between an achromatic state and a transparent state, and a second layer that reversibly changes between a chromatic state and a transparent state.

10. 发明申请

US20170337880A1 DISPLAY UNIT AND METHOD OF DRIVING DISPLAY UNIT, AND ELECTRONIC APPARATUS 审中-公开
公开(公告)号：US20170337880A1
公开(公告)日：2017-11-23
申请号：US15529675
申请日：2015-11-05
申请人： Sony Corporation
发明人： Akihito Nishiike , Hidehiko Takanashi , Yuki Oishi
IPC分类号： G09G3/34
CPC分类号： G09G3/344 , G09G2300/08 , G09G2310/0248 , G09G2310/065 , G09G2320/0252 , G09G2320/066
摘要： A display unit includes an electrophoretic display device in which an optical reflectance varies on a time-series basis depending on an applied voltage, and a drive circuit that performs voltage drive of the electrophoretic display device. The drive circuit applies a first voltage directed to display to the electrophoretic display device over a period of one or more frames, and applies, in the period of one or more frames, a second voltage that is different from the first voltage once or a plurality of times on or after a first point of time at which a derivative value of the optical reflectance reaches a maximum magnitude.

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