专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110291771A1 APPARATUS FOR MULTIPLE FREQUENCY POWER APPLICATION 有权
标题翻译：多种频率功率应用的设备
公开(公告)号：US20110291771A1
公开(公告)日：2011-12-01
申请号：US13205933
申请日：2011-08-09
申请人： Steven C. Shannon , Jang Gyoo Yang , Matthew L. Miller , Kartik Ramaswamy , James P. Cruse
发明人： Steven C. Shannon , Jang Gyoo Yang , Matthew L. Miller , Kartik Ramaswamy , James P. Cruse
IPC分类号： H03H7/40 , H03H7/38
CPC分类号： H03H7/38
摘要： Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.
摘要翻译：提供了用于与处理室一起使用的功率匹配装置的装置和方法。在本发明的一个方面，提供了一种功率匹配装置，其包括耦合到第一可调电容器的第一RF功率输入端，耦合到第二可调电容器的第二RF功率输入端，耦合到第一可调电容器的功率端，耦合到功率结的接收器电路，耦合到功率结的高电压滤波器和高压滤波器具有高电压输出，耦合到功率结的电压/电流检测器和连接到功率结的RF功率输出电压/电流检测器。

2. 发明授权

US07994872B2 Apparatus for multiple frequency power application 有权
标题翻译：多频电源设备
公开(公告)号：US07994872B2
公开(公告)日：2011-08-09
申请号：US12506658
申请日：2009-07-21
申请人： Steven C. Shannon , Jang Gyoo Yang , Matthew L. Miller , Kartik Ramaswamy , James P. Cruse
发明人： Steven C. Shannon , Jang Gyoo Yang , Matthew L. Miller , Kartik Ramaswamy , James P. Cruse
IPC分类号： H03H7/40
CPC分类号： H03H7/38
摘要： Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.
摘要翻译：提供了用于与处理室一起使用的功率匹配装置的装置和方法。在本发明的一个方面，提供了一种功率匹配装置，其包括耦合到第一可调电容器的第一RF功率输入端，耦合到第二可调电容器的第二RF功率输入端，耦合到第一可调电容器的功率端，耦合到功率结的接收器电路，耦合到功率结的高电压滤波器和高压滤波器具有高电压输出，耦合到功率结的电压/电流检测器和连接到功率结的RF功率输出电压/电流检测器。

3. 发明授权

US08237517B2 Apparatus for multiple frequency power application 有权
标题翻译：多频电源设备
公开(公告)号：US08237517B2
公开(公告)日：2012-08-07
申请号：US13205933
申请日：2011-08-09
申请人： Steven C. Shannon , Jang Gyoo Yang , Matthew L. Miller , Kartik Ramaswamy , James P. Cruse
发明人： Steven C. Shannon , Jang Gyoo Yang , Matthew L. Miller , Kartik Ramaswamy , James P. Cruse
IPC分类号： H03H7/38
CPC分类号： H03H7/38
摘要： Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.
摘要翻译：提供了用于与处理室一起使用的功率匹配装置的装置和方法。在本发明的一个方面，提供了一种功率匹配装置，其包括耦合到第一可调电容器的第一RF功率输入端，耦合到第二可调电容器的第二RF功率输入端，耦合到第一可调电容器的功率端，耦合到功率结的接收器电路，耦合到功率结的高电压滤波器和高压滤波器具有高电压输出，耦合到功率结的电压/电流检测器和连接到功率结的RF功率输出电压/电流检测器。

4. 发明授权

US07375947B2 Method of feedback control of ESC voltage using wafer voltage measurement at the bias supply output 有权
标题翻译：使用偏置电源输出的晶圆电压测量对ESC电压进行反馈控制的方法
公开(公告)号：US07375947B2
公开(公告)日：2008-05-20
申请号：US11672362
申请日：2007-02-07
申请人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
发明人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
IPC分类号： H01L21/283 , B23B31/28
CPC分类号： H01J37/32706 , H01J37/32935 , H01L21/6833 , Y10T279/23
摘要： In a plasma reactor having an electrostatic chuck, wafer voltage is determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage is used to accurately control the DC wafer clamping voltage.
摘要翻译：在具有静电卡盘的等离子体反应器中，使用基于偏置输入的传输线特性的先前确定的常数，在偏置输入处的RF测量确定晶片电压，并且该晶片电压用于精确地控制DC晶片钳位电压。

5. 发明授权

US07359177B2 Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output 有权
标题翻译：具有E.S.C.反馈控制的双偏压等离子体反应器电压使用晶圆电压测量在偏置电源输出
公开(公告)号：US07359177B2
公开(公告)日：2008-04-15
申请号：US11127036
申请日：2005-05-10
申请人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
发明人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
IPC分类号： H01L21/683 , H01T23/00 , G01L21/30 , G01R31/00 , H01J7/24 , H05B31/26 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32706 , H01J37/32935 , H01L21/6833 , Y10T279/23
摘要： A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(1), f(2), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply and an output end coupled to the wafer support pedestal, and sensor circuits providing measurement signals representing first and second frequency components of a measured voltage and first and second frequency components of a measured current near the input end of the RF power path. The reactor further includes a processor for providing first and second frequency components of a wafer voltage signal as, respectively, a first sum of the first frequency components of the measured voltage and measured current multiplied by first and second coefficients respectively, and a second sum of the second frequency components of the measured voltage and measured current multiplied by third and fourth coefficients, respectively. A processor produces a D.C. wafer voltage by combining D.C. components of the first and second frequency components of the wafer voltage with an intermodulation correction factor that is the product of the D.C. components of the first and second components of the wafer voltage raised to a selected power and multiplied by a selected coefficient.
摘要翻译：等离子体反应器具有双频等离子体RF偏压电源，其分别提供包括第一和第二频率分量f（1），f（2）的RF偏置功率，以及具有耦合到等离子体RF偏置的输入端的RF功率路径电源和耦合到晶片支撑基座的输出端，以及传感器电路，其提供表示测量电压的第一和第二频率分量以及在RF功率路径的输入端附近的测量电流的第一和第二频率分量的测量信号。反应器还包括处理器，用于分别提供晶片电压信号的第一和第二频率分量，分别为测量电压的第一频率分量和测量电流乘以第一和第二系数的第一和，以及第二和测量电压和测量电流的第二频率分量分别乘以第三和第四系数。处理器通过将晶片电压的第一和第二频率分量的DC分量与作为晶片电压的第一和第二分量的DC分量升高到所选功率的互调校正因子相结合来产生DC晶片电压并乘以所选系数。

6. 发明申请

US20110201134A1 CAPACITIVELY COUPLED PLASMA REACTOR WITH MAGNETIC PLASMA CONTROL 审中-公开
标题翻译：具有磁性等离子体控制的电容耦合等离子体反应器
公开(公告)号：US20110201134A1
公开(公告)日：2011-08-18
申请号：US13081005
申请日：2011-04-06
申请人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
发明人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
IPC分类号： H01L21/66 , H01L21/3065
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.
摘要翻译：等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域支持和天花板。工艺气体入口将工艺气体提供到腔室中。等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

7. 发明授权

US07955986B2 Capacitively coupled plasma reactor with magnetic plasma control 有权
标题翻译：具有磁等离子体控制的电容耦合等离子体反应器
公开(公告)号：US07955986B2
公开(公告)日：2011-06-07
申请号：US11360944
申请日：2006-02-23
申请人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
发明人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
IPC分类号： H05H1/40 , C23C16/00 , C23C16/505 , C23C16/52 , H01L21/3065
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.
摘要翻译：等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域支持和天花板。工艺气体入口将工艺气体提供到腔室中。等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

8. 发明申请

US20100098882A1 PLASMA SOURCE FOR CHAMBER CLEANING AND PROCESS 审中-公开
标题翻译：用于室清洁和过程的等离子体源
公开(公告)号：US20100098882A1
公开(公告)日：2010-04-22
申请号：US12581600
申请日：2009-10-19
申请人： Dmitry Lubomirsky , Jang Gyoo Yang , Qiwei Liang , Matthew L. Miller , James Santosa , Xinglong Chen , Paul F. Smith
发明人： Dmitry Lubomirsky , Jang Gyoo Yang , Qiwei Liang , Matthew L. Miller , James Santosa , Xinglong Chen , Paul F. Smith
IPC分类号： C23C16/50 , C23C16/00
CPC分类号： C23C16/4405 , H01J37/32036 , H01J37/32045 , H01J37/32082 , H01J37/32183 , H01J37/32357
摘要： Apparatus and methods for processing a substrate and processing a process chamber are provided. In one embodiment, an apparatus is provided for processing a substrate including a power source, a switch box coupled to the power source and the switch box having a switch interchangeable between a first position and a second position, a first match box coupled to the switch box, a plasma generator coupled to the first match box, a second match box coupled to the switch box, and a remote plasma source coupled to the second match box.
摘要翻译：提供了用于处理基板和处理处理室的装置和方法。在一个实施例中，提供一种用于处理包括电源，耦合到电源的开关盒和具有可在第一位置和第二位置之间互换的开关的开关盒的基板的设备，耦合到开关的第一匹配盒耦合到第一匹配盒的等离子体发生器，耦合到开关盒的第二匹配盒以及耦合到第二匹配盒的远程等离子体源。

9. 发明授权

US06853141B2 Capacitively coupled plasma reactor with magnetic plasma control 有权
标题翻译：具有磁等离子体控制的电容耦合等离子体反应器
公开(公告)号：US06853141B2
公开(公告)日：2005-02-08
申请号：US10192271
申请日：2002-07-09
申请人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
发明人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
IPC分类号： H05H1/46 , H01J27/16 , H01J37/08 , H01J37/32 , H01L21/3065 , H01J7/24
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the sidewall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.
摘要翻译：等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域支持和天花板。工艺气体入口将工艺气体提供到腔室中。等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。所述反应器还包括至少邻近所述天花板的顶部螺线管电磁体，所述架空螺线管电磁体，所述天花板，所述侧壁和所述工件支撑件沿着公共对称轴线定位。电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

10. 发明授权

US07972968B2 High density plasma gapfill deposition-etch-deposition process etchant 失效
标题翻译：高密度等离子体填隙沉积 - 蚀刻沉积工艺蚀刻剂
公开(公告)号：US07972968B2
公开(公告)日：2011-07-05
申请号：US12193162
申请日：2008-08-18
申请人： Young S. Lee , Ying Rui , Dmitry Lubomirsky , Daniel J. Hoffman , Jang Gyoo Yang , Anchuan Wang
发明人： Young S. Lee , Ying Rui , Dmitry Lubomirsky , Daniel J. Hoffman , Jang Gyoo Yang , Anchuan Wang
IPC分类号： H01L21/461
CPC分类号： H01L21/76224 , C23C16/045 , H01L21/02164 , H01L21/02274 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A high density plasma dep/etch/dep method of depositing a dielectric film into a gap between adjacent raised structures on a substrate disposed in a substrate processing chamber. The method deposits a first portion of the dielectric film within the gap by forming a high density plasma from a first gaseous mixture flown into the process chamber, etches the deposited first portion of the dielectric film by flowing an etchant gas comprising CxFy, where a ratio of x to y is greater than or equal to 1:2 and then deposits a second portion of the dielectric film over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber.
摘要翻译：将介电膜沉积在设置在基板处理室中的基板上的相邻凸起结构之间的间隙中的高密度等离子体蚀刻/蚀刻/蚀刻方法。该方法通过从流入处理室的第一气体混合物形成高密度等离子体，将电介质膜的第一部分沉积在间隙内，通过流过包含CxFy的蚀刻剂气体来蚀刻沉积的电介质膜的第一部分，的x至y大于或等于1：2，然后通过从流入处理室的第二气态混合物形成高密度等离子体，将第二部分电介质膜沉积在第一部分上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式