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1. 发明授权

US08999856B2 Methods for etch of sin films 有权
标题翻译：蚀刻薄膜的方法
公开(公告)号：US08999856B2
公开(公告)日：2015-04-07
申请号：US13416277
申请日：2012-03-09
申请人： Jingchun Zhang , Anchuan Wang , Nitin Ingle
发明人： Jingchun Zhang , Anchuan Wang , Nitin Ingle
IPC分类号： H01L21/302 , H01L21/311 , H01J37/32
CPC分类号： H01L21/31116 , C09K13/00 , H01J37/32357 , H01J37/32422 , H01L21/02164 , H01L21/0217 , H01L21/3065 , H01L21/311 , H01L21/32135 , H01L21/32136 , H01L21/32137 , H01L21/67069
摘要： A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer.
摘要翻译：从包括氮化硅层和氧化硅层的衬底中选择性地蚀刻氮化硅的方法包括将含氟气体流入衬底处理室的等离子体产生区域并向含氟气体施加能量以产生等离子体在等离子体产生区域中。等离子体包括氟自由基和氟离子。该方法还包括过滤等离子体以提供具有比氟离子更高浓度的氟自由基的反应气体，并使反应气体流入基板处理室的气体反应区域。该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。反应气体以比反应气体更高的蚀刻速率蚀刻氮化硅层蚀刻氧化硅层。

2. 发明申请

US20130034968A1 DRY-ETCH FOR SILICON-AND-CARBON-CONTAINING FILMS 有权
标题翻译：含硅和碳膜的干燥剂
公开(公告)号：US20130034968A1
公开(公告)日：2013-02-07
申请号：US13279998
申请日：2011-10-24
申请人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle , Yunyu Wang , Young Lee
发明人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle , Yunyu Wang , Young Lee
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01L21/31116
摘要： A method of etching exposed silicon-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-carbon-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-carbon-containing material from the exposed silicon-and-carbon-containing material regions while very slowly removing other exposed materials. The silicon-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-carbon-containing material at more than twenty times the rate of silicon oxide.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的含硅和碳的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含硅和碳的材料的暴露区域反应。等离子体流出物与图案化的异质结构反应，以便从暴露的含硅和碳的材料区域选择性地除去含硅和碳的材料，同时非常缓慢地除去其它暴露的材料。含硅和碳的材料选择性部分取决于位于远程等离子体和基板处理区域之间的离子抑制元件的存在。离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。该方法可用于以超过二氧化硅的二十倍的速率选择性地除去含硅和碳的材料。

3. 发明申请

US20100099236A1 GAPFILL IMPROVEMENT WITH LOW ETCH RATE DIELECTRIC LINERS 有权
标题翻译： GAPFILL改进与低调速电介质线
公开(公告)号：US20100099236A1
公开(公告)日：2010-04-22
申请号：US12437256
申请日：2009-05-07
申请人： Young Soo Kwon , Bi Jang , Anchuan Wang , Young S. Lee , Mihaela Balseanu , Li-Qun Xia , Jin Ho Jeon
发明人： Young Soo Kwon , Bi Jang , Anchuan Wang , Young S. Lee , Mihaela Balseanu , Li-Qun Xia , Jin Ho Jeon
IPC分类号： H01L21/762 , H01L21/31
CPC分类号： H01L21/76224 , H01L21/02112 , H01L21/02247 , H01L21/02304 , H01L21/318
摘要： A method of filling a trench is described and includes depositing a dielectric liner with a high ratio of silicon oxide to dielectric liner etch rate in fluorine-containing etch chemistries. Silicon oxide is deposited within the trench and etched to reopen or widen a gap near the top of the trench. The dielectric liner protects the underlying substrate during the etch process so the gap can be made wider. Silicon oxide is deposited within the trench again to substantially fill the trench.
摘要翻译：描述了填充沟槽的方法，并且包括在含氟蚀刻化学中沉积具有高比率的氧化硅与介电衬里蚀刻速率的介电衬垫。氧化硅沉积在沟槽内并蚀刻以重新打开或加宽沟槽顶部附近的间隙。电介质衬垫在蚀刻工艺期间保护下面的衬底，从而可以使间隙更宽。氧化硅再次沉积在沟槽内以基本上填充沟槽。

4. 发明申请

US20100041207A1 HIGH DENSITY PLASMA GAPFILL DEPOSITION-ETCH-DEPOSITION PROCESS USING FLUOROCARBON ETCHANT 失效
标题翻译：使用荧光探针的高密度等离子体吸附沉积 - 沉积沉积工艺
公开(公告)号：US20100041207A1
公开(公告)日：2010-02-18
申请号：US12193162
申请日：2008-08-18
申请人： Young S. Lee , Ying Rui , Dmitry Lubomirsky , Daniel J. Hoffman , Jang Gyoo Yang , Anchuan Wang
发明人： Young S. Lee , Ying Rui , Dmitry Lubomirsky , Daniel J. Hoffman , Jang Gyoo Yang , Anchuan Wang
IPC分类号： H01L21/762
CPC分类号： H01L21/76224 , C23C16/045 , H01L21/02164 , H01L21/02274 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A high density plasma dep/etch/dep method of depositing a dielectric film into a gap between adjacent raised structures on a substrate disposed in a substrate processing chamber. The method deposits a first portion of the dielectric film within the gap by forming a high density plasma from a first gaseous mixture flown into the process chamber, etches the deposited first portion of the dielectric film by flowing an etchant gas comprising CxFy, where a ratio of x to y is greater than or equal to 1:2 and then deposits a second portion of the dielectric film over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber.
摘要翻译：将介电膜沉积在设置在基板处理室中的基板上的相邻凸起结构之间的间隙中的高密度等离子体蚀刻/蚀刻/蚀刻方法。该方法通过从流入处理室的第一气体混合物形成高密度等离子体，将电介质膜的第一部分沉积在间隙内，通过流过包含CxFy的蚀刻剂气体来蚀刻沉积的电介质膜的第一部分，的x至y大于或等于1：2，然后通过从流入处理室的第二气态混合物形成高密度等离子体，将第二部分电介质膜沉积在第一部分上。

5. 发明申请

US20050008790A1 Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology 失效
标题翻译：氢辅助HDP-CVD沉积工艺，用于积极的间隙填充技术
公开(公告)号：US20050008790A1
公开(公告)日：2005-01-13
申请号：US10915781
申请日：2004-08-10
申请人： Bikram Kapoor , M. Ziaul Karim , Anchuan Wang
发明人： Bikram Kapoor , M. Ziaul Karim , Anchuan Wang
IPC分类号： C23C16/04 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/316 , H05H1/24 , C23C16/00
CPC分类号： C23C16/045 , C23C16/402 , C23C16/45523 , H01J37/321 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/31612
摘要： A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with highD/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lowerD/S ratio of, for example, 3-10.
摘要翻译：一种在相邻的凸起表面之间形成有沟槽的衬底上沉积氧化硅层的方法。在一个实施例中，氧化硅层形成在多步骤工艺中，其包括通过形成高密度等离子体工艺在衬底上和沟槽内沉积第一部分层，该高密度等离子体工艺具有来自第一工艺气体的同时淀积和溅射组分，源，氧源和具有高D / S比的氦和/或分子氢，例如10-20，然后通过形成高密度等离子体在衬底上和沟槽内沉积氧化硅层的第二部分具有来自包含硅源，氧源和低D / S比例如3-10的分子氢的第二工艺气体的同时沉积和溅射组分的方法。

6. 发明授权

US08808563B2 Selective etch of silicon by way of metastable hydrogen termination 有权
标题翻译：通过亚稳态氢终止法选择性蚀刻硅
公开(公告)号：US08808563B2
公开(公告)日：2014-08-19
申请号：US13439079
申请日：2012-04-04
申请人： Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
发明人： Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
IPC分类号： B44C1/22 , H01L21/3065 , H01J37/32 , H01L21/3213
CPC分类号： H01L21/3065 , H01J37/32357 , H01L21/3081 , H01L21/32137
摘要： Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的硅的方法，并且包括由含氟前体和含氢前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与暴露的硅区域反应。等离子体流出物与图案化的异质结构反应以选择性地除去硅，同时非常缓慢地除去其它暴露的材料。硅选择性部分地导致远离等离子体中含氢前体的优势，氢终止在图案化异质结构上的表面。含氟前体的流速要低得多，在氢封端的硅上逐渐取代氟氢，从而从硅的暴露区域选择性除去硅。这些方法可用于选择性地除去硅比氧化硅，氮化硅和各种含金属材料更快的硅。

7. 发明申请

US20130045605A1 DRY-ETCH FOR SILICON-AND-NITROGEN-CONTAINING FILMS 审中-公开
标题翻译：含氮和含氮薄膜的干燥剂
公开(公告)号：US20130045605A1
公开(公告)日：2013-02-21
申请号：US13448541
申请日：2012-04-17
申请人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
发明人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01L21/31116
摘要： A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-nitrogen-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from the exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. The silicon-and-nitrogen-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的含硅和氮的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与含硅和氮的材料的暴露区域反应。等离子体流出物与图案化的异质结构反应，从暴露的含硅和氮的材料区域中选择性地除去含硅和氮的材料，同时非常缓慢地除去其它暴露的材料。含氮和氮的材料的选择性部分取决于位于远程等离子体和衬底处理区域之间的离子抑制元件的存在。离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。该方法可用于以超过二氧化硅速率的二十倍来选择性地除去含硅和氮的材料。

8. 发明申请

US20120238102A1 METHODS FOR ETCH OF SIN FILMS 有权
标题翻译：方法用于刻蚀薄膜
公开(公告)号：US20120238102A1
公开(公告)日：2012-09-20
申请号：US13416277
申请日：2012-03-09
申请人： Jingchun Zhang , Anchuan Wang , Nitin Ingle
发明人： Jingchun Zhang , Anchuan Wang , Nitin Ingle
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , C09K13/00 , H01J37/32357 , H01J37/32422 , H01L21/02164 , H01L21/0217 , H01L21/3065 , H01L21/311 , H01L21/32135 , H01L21/32136 , H01L21/32137 , H01L21/67069
摘要： A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer.
摘要翻译：从包括氮化硅层和氧化硅层的衬底中选择性地蚀刻氮化硅的方法包括将含氟气体流入衬底处理室的等离子体产生区域并向含氟气体施加能量以产生等离子体在等离子体产生区域中。等离子体包括氟自由基和氟离子。该方法还包括过滤等离子体以提供具有比氟离子更高浓度的氟自由基的反应气体，并使反应气体流入基板处理室的气体反应区域。该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。反应气体以比反应气体更高的蚀刻速率蚀刻氮化硅层蚀刻氧化硅层。

9. 发明授权

US07745350B2 Impurity control in HDP-CVD DEP/ETCH/DEP processes 失效
标题翻译： HDP-CVD DEP / ETCH / DEP工艺中的杂质控制
公开(公告)号：US07745350B2
公开(公告)日：2010-06-29
申请号：US12204523
申请日：2008-09-04
申请人： Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
发明人： Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
IPC分类号： H01L21/311 , H01L21/3065
CPC分类号： C23C16/045 , C23C16/4408 , H01L21/02164 , H01L21/02274 , H01L21/31116 , H01L21/31608 , H01L21/76229
摘要： Methods are disclosed of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A first portion of the silicon oxide film is deposited over the substrate and within the gap using a high-density plasma process. Thereafter, a portion of the deposited first portion of the silicon oxide film is etched back. This includes flowing a halogen precursor through a first conduit from a halogen-precursor source to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the portion has been etched back. Thereafter, a halogen scavenger is flowed to the substrate processing chamber to react with residual halogen in the substrate processing chamber. Thereafter, a second portion of the silicon oxide film is deposited over the first portion of the silicon oxide film and within the gap using a high-density plasma process.
摘要翻译：公开了在设置在基板处理室中的基板上沉积氧化硅膜的方法。基板在相邻的凸起表面之间形成间隙。氧化硅膜的第一部分使用高密度等离子体工艺沉积在衬底上并在间隙内。此后，将氧化硅膜的沉积的第一部分的一部分回蚀刻。这包括使卤素前体通过第一导管从卤素前体源流到基底处理室，从卤素前体形成高密度等离子体，并且在该部分被回蚀后终止流动卤素前体。此后，卤素清除剂流到基板处理室以与基板处理室中的残留卤素反应。此后，使用高密度等离子体处理，在氧化硅膜的第一部分和间隙内沉积第二部分氧化硅膜。

10. 发明申请

US20090075489A1 REDUCTION OF ETCH-RATE DRIFT IN HDP PROCESSES 有权
标题翻译：降低HDP工艺中的蚀刻速率
公开(公告)号：US20090075489A1
公开(公告)日：2009-03-19
申请号：US12204503
申请日：2008-09-04
申请人： Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
发明人： Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
IPC分类号： H01L21/31
CPC分类号： C23C16/045 , C23C16/4404 , C23C16/4405 , H01L21/02164 , H01L21/02274 , H01L21/31612
摘要： A processing chamber is seasoned by providing a flow of season precursors to the processing chamber. A high-density plasma is formed from the season precursors by applying at least 7500 W of source power distributed with greater than 70% of the source power at a top of the processing chamber. A season layer having a thickness of at least 5000 Å is deposited at one point using the high-density plasma. Each of multiple substrates is transferred sequentially into the processing chamber to perform a process that includes etching. The processing chamber is cleaned between sequential transfers of the substrates.
摘要翻译：通过向处理室提供季节前体的流动来调节处理室。通过在处理室的顶部施加分配有大于70％的源功率的至少7500W的源功率，从季节前体形成高密度等离子体。使用高密度等离子体在一个点沉积具有至少5000埃的厚度的季节层。将多个基板中的每一个依次传送到处理室中以执行包括蚀刻的处理。在基板的顺序转印之间清洁处理室。

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