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1. 发明申请

US20180342545A1 LIGHT RECEIVING ELEMENT AND LIGHT RECEIVING DEVICE 审中-公开
公开(公告)号：US20180342545A1
公开(公告)日：2018-11-29
申请号：US15961064
申请日：2018-04-24
申请人： Sumitomo Electric Industries, Ltd.
发明人： Daisuke Kimura , Hiroshi Inada
IPC分类号： H01L27/146 , H01L31/0352 , H01L31/0224 , H01L31/02 , H01L23/00 , H01L31/0216 , H01L31/0304 , H01L31/18
CPC分类号： H01L27/1465 , H01L24/11 , H01L24/13 , H01L24/16 , H01L27/14636 , H01L27/14694 , H01L31/02005 , H01L31/02161 , H01L31/022408 , H01L31/0304 , H01L31/035236 , H01L31/035281 , H01L31/184 , H01L2224/13014 , H01L2224/13016 , H01L2224/13109 , H01L2224/1403 , H01L2224/14131 , H01L2224/14179 , H01L2224/16145 , H01L2924/3511
摘要： A light receiving element includes: a semiconductor layer including a first layer, a light absorbing layer, a second layer, and a third layer, the semiconductor layer having a plurality of mesas, a terrace, and a groove; a first electrode provided on the mesas and electrically connected to the third layer; a first bump provided on the first electrode and electrically connected to the first electrode; a second electrode provided on a portion extending from the terrace to an inner side of the groove and electrically connected to the first layer; and a second bump larger than the first bump, is provided on the terrace, and is electrically connected to the second electrode, wherein the mesas and the terrace include the semiconductor layer, the groove extends to the first layer, and the second electrode is in contact with the first layer on an inner side of the groove.

2. 发明申请

US20180315873A1 INFRARED LIGHT-RECEIVING DEVICE 审中-公开
公开(公告)号：US20180315873A1
公开(公告)日：2018-11-01
申请号：US15913385
申请日：2018-03-06
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Sundararajan BALASEKARAN , Hiroshi Inada
IPC分类号： H01L31/0352 , H01L31/18 , H01L31/0304
CPC分类号： H01L31/035236 , H01L31/03042 , H01L31/03046 , H01L31/109 , H01L31/1844
摘要： An infrared light-receiving device includes an optical absorption layer disposed on a principal surface of a substrate and an optical filter disposed on the optical absorption layer, the optical filter including first, second, and third semiconductor regions that are arranged in that order in a direction from the optical absorption layer to the optical filter, each of the first, second, and third semiconductor regions including an n-type InGaAs layer. The optical absorption layer includes a type-II superlattice structure. The first semiconductor region contains an n-type impurity with a concentration of 2.0×1019 cm−3 or more. The third semiconductor region contains an n-type impurity with a concentration of 3.0×1018 cm−3 or less and 8.0×1017 cm−3 or more. The second semiconductor region contains an n-type impurity with a concentration between the impurity concentration of the first semiconductor region and the impurity concentration of the second semiconductor region.

3. 发明申请

US20180315872A1 INFRARED DETECTING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20180315872A1
公开(公告)日：2018-11-01
申请号：US15958862
申请日：2018-04-20
申请人： Sumitomo Electric Industries, Ltd.
发明人： Sundararajan Balasekaran , Hiroshi Inada
IPC分类号： H01L31/0304 , H01L31/0216 , H01L31/0352 , H01L31/0224
CPC分类号： H01L31/03046 , H01L31/02162 , H01L31/02164 , H01L31/0224 , H01L31/022408 , H01L31/03042 , H01L31/035236 , H01L31/109
摘要： An infrared detecting semiconductor device comprises: an optical absorbing layer of type-II disposed between first conductivity-type and second conductivity-type semiconductor layers; and an optical filtering film of n-type InGaAs having an n-type dopant concentration larger than 8×1017 cm−3. The optical filtering film includes first to third semiconductor regions, which are sequentially arranged in a direction of a first axis on the optical filtering film. The first semiconductor region has an n-type dopant concentration of 2.0×1019 cm−3 or more. The third semiconductor region has a n-type concentration of 3.0×1018 cm−3 or less. The second semiconductor region has an n-type dopant profile monotonically changing from a first dopant concentration at a boundary between the first and second semiconductor regions to a second dopant concentration at a boundary between the second and third semiconductor regions. The first dopant concentration is greater than the second dopant concentration.

4. 发明申请

US20180308999A1 SEMICONDUCTOR LIGHT RECEIVING DEVICE 审中-公开
公开(公告)号：US20180308999A1
公开(公告)日：2018-10-25
申请号：US15953987
申请日：2018-04-16
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Sundararajan Balasekaran , Hiroshi Inada
IPC分类号： H01L31/0352 , H01L31/0304 , H01L31/109 , H01L27/144 , H01L31/18
CPC分类号： H01L31/035236 , H01L27/1443 , H01L27/1446 , H01L31/02161 , H01L31/022408 , H01L31/03046 , H01L31/109 , H01L31/1844
摘要： A semiconductor light receiving device includes: a substrate; and a photodiode dispose on the substrate. The photodiode has an optical absorbing layer disposed on the substrate, the optical absorbing layer having an InGaAs/GaAsSb superlattice, a first bulk semiconductor layer disposed between the substrate and the InGaAs/GaAsSb superlattice, and a second bulk semiconductor layer having a bandgap energy smaller than that of InGaAs, the second bulk semiconductor layer making contact with the first bulk semiconductor layer. The first bulk semiconductor layer includes p-type InGaAs. The second bulk semiconductor layer includes a group III antimony compound, the group III antimony compound containing gallium as group III constituent element.

5. 发明申请

US20180184181A1 OPTICAL SWITCH, OPTICAL SWITCHING APPARATUS 审中-公开
公开(公告)号：US20180184181A1
公开(公告)日：2018-06-28
申请号：US15850918
申请日：2017-12-21
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Sundararajan Balasekaran , Hiroshi Inada
IPC分类号： H04Q11/00 , G02F1/137 , H04B10/11 , H04B10/25 , G02B6/35
CPC分类号： H04Q11/0003 , G02B6/351 , G02B6/3548 , G02B6/3552 , G02B6/3594 , G02F1/01716 , G02F1/13737 , G02F2001/0155 , H04B10/11 , H04B10/2504 , H04Q11/00
摘要： An optical switch comprises: a first optical absorbing layer sensitive to a first light, first optical absorbing layer including a first superlattice structure and having a first bandgap; a second optical absorbing layer sensitive to a second light, the second optical absorbing layer having a second bandgap smaller than that of the first bandgap; and a barrier layer including a second superlattice structure, the first optical absorbing layer, the second optical absorbing layer, and the barrier layer being arranged in a direction of a first axis to form an arrangement, the arrangement forming a first band-offset in a conduction band of the first optical absorbing layer, a second band-offset in a conduction band of the first optical absorbing layer, and a well in a conduction band of the second optical absorbing layer.

6. 发明授权

US09818895B2 Semiconductor device, optical sensor device and semiconductor device manufacturing method 有权
公开(公告)号：US09818895B2
公开(公告)日：2017-11-14
申请号：US14694278
申请日：2015-04-23
申请人： Sumitomo Electric Industries, Ltd.
发明人： Kei Fujii , Katsushi Akita , Takashi Ishizuka , Hideaki Nakahata , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai
IPC分类号： H01L31/0352 , B82Y20/00 , H01L31/105 , H01L31/0304 , H01L31/18
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/03046 , H01L31/105 , H01L31/1844
摘要： Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z≧−0.4x+24.6 is satisfied.

7. 发明授权

US09696205B2 Array type light-receiving device and hyperspectral spectrometer including array type light-receiving device 有权
公开(公告)号：US09696205B2
公开(公告)日：2017-07-04
申请号：US14727318
申请日：2015-06-01
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Yasuhiro Iguchi , Hiroshi Inada
IPC分类号： G01J3/28 , H01L27/146
CPC分类号： G01J3/2803 , G01J3/2823 , H01L27/14605 , H01L27/14607 , H01L27/14634
摘要： An array type light-receiving device includes a plurality of pixels two-dimensionally arranged in a first direction and a second direction perpendicular to the first direction, each of the pixels including a light-receiving layer having a responsivity to a wavelength of light. The pixels arranged in the second direction constitute a plurality of pixel lines extending in the second direction, the plurality of pixel lines being arranged in the first direction to form an array. The pixels in each of the pixel lines have different pixel areas from each other. In addition, the pixel area of each of the pixels included in at least one of the pixel lines is determined in accordance with the responsivity to a wavelength of light received by each of the pixels.

8. 发明授权

US09525087B2 Light receiving device and method for manufacturing light receiving device 有权
标题翻译：光接收装置及其制造方法
公开(公告)号：US09525087B2
公开(公告)日：2016-12-20
申请号：US14690128
申请日：2015-04-17
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Yukihiro Tsuji , Hiroshi Inada
IPC分类号： H01L31/0352 , H01L31/0216 , H01L31/105 , H01L31/18
CPC分类号： H01L31/035236 , H01L31/02161 , H01L31/105 , H01L31/184 , Y02E10/544 , Y02P70/521
摘要： A light receiving device includes a mesa structure including a light absorption layer disposed on a semiconductor region; a passivation film disposed on a side surface of the mesa structure, the passivation film containing oxygen; and a nitriding layer disposed between the side surface of the mesa structure and the passivation film. The light absorption layer includes a super-lattice structure including first semiconductor layers and second semiconductor layers that are alternately stacked. The first semiconductor layer is made of a III-V group compound semiconductor. The second semiconductor layer is made of a III-V group compound semiconductor that is different from the III-V group compound semiconductor of the first semiconductor layer. The first semiconductor layer contains antimony as a group V constituent element. In addition, the nitriding layer is made of a nitride containing a group III constituent element of the first semiconductor layer and/or the second semiconductor layer.
摘要翻译：光接收装置包括：台面结构，包括设置在半导体区域上的光吸收层; 设置在所述台面结构的侧表面上的钝化膜，所述钝化膜含有氧; 以及设置在台面结构的侧表面和钝化膜之间的氮化层。光吸收层包括交替堆叠的包括第一半导体层和第二半导体层的超晶格结构。第一半导体层由III-V族化合物半导体制成。第二半导体层由不同于第一半导体层的III-V族化合物半导体的III-V族化合物半导体制成。第一半导体层含有锑作为V族构成元素。另外，氮化层由含有第一半导体层和/或第二半导体层的III族构成元素的氮化物构成。

9. 发明授权

US09264645B2 Optical sensor apparatus 有权
标题翻译：光学传感器装置
公开(公告)号：US09264645B2
公开(公告)日：2016-02-16
申请号：US14448311
申请日：2014-07-31
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Hiroshi Inada , Masaki Migita , Yasuhiro Iguchi
IPC分类号： H04N5/378 , H04N5/33 , H04N5/361 , H04N5/225
CPC分类号： H04N5/378 , H01L2224/16145 , H01L2224/48091 , H01L2224/73257 , H04N5/2257 , H04N5/33 , H04N5/361 , H01L2924/00014
摘要： An optical sensor apparatus includes a package having a window; a sensor chip having an array of light receiving devices and a pixel electrode connected to each light receiving device, the sensor chip having an incidence surface that faces the window of the package; and a read-out circuit disposed under the sensor chip, the read-out circuit having a read-out electrode electrically connected to each pixel electrode of the sensor chip. The sensor chip and the read-out circuit are housed in the package. In plan view from the sensor chip, the read-out circuit is overlapped by the sensor chip, and the read-out circuit has no portion extending off the sensor chip.
摘要翻译：光学传感器装置包括具有窗口的封装; 传感器芯片，其具有光接收装置的阵列和连接到每个光接收装置的像素电极，所述传感器芯片具有面向所述封装的窗口的入射表面; 以及设置在所述传感器芯片下方的读出电路，所述读出电路具有电连接到所述传感器芯片的每个像素电极的读出电极。传感器芯片和读出电路容纳在封装中。在传感器芯片的俯视图中，读出电路与传感器芯片重叠，读出电路没有从传感器芯片延伸的部分。

10. 发明授权

US09728577B2 Infrared image sensor 有权
公开(公告)号：US09728577B2
公开(公告)日：2017-08-08
申请号：US14855016
申请日：2015-09-15
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Hiroshi Inada , Sundararajan Balasekaran
IPC分类号： H01L27/146 , H01L31/0304 , H01L31/0352
CPC分类号： H01L27/14652 , H01L27/14634 , H01L27/1469 , H01L27/14694 , H01L31/03046 , H01L31/035236 , H01L31/105 , Y02E10/544
摘要： An infrared image sensor includes a bias circuit receiving a timing signal, the bias circuit generating a bias voltage having a first value and a second value in response to the timing signal; a semiconductor light-receiving device including a photodiode, the semiconductor light-receiving device receiving the bias voltage; a read-out circuit including a read-out electrode connected to the photodiode, the read-out electrode receiving an electrical signal from the photodiode; and a signal processing circuit processing a read-out signal from the read-out circuit synchronously with the timing signal. The photodiode includes an optical absorption layer made of a III-V group compound semiconductor. The optical absorption layer has a type II multi quantum well structure including first compound semiconductor layers containing antimony as a constituent element and second compound semiconductor layers that are stacked alternately.

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