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1. 发明授权

US07629589B2 Apparatus and method for controlling ion beam 有权
标题翻译：用于控制离子束的装置和方法
公开(公告)号：US07629589B2
公开(公告)日：2009-12-08
申请号：US11703130
申请日：2007-02-07
申请人： Sung-Wook Hwang , Do-Haing Lee , Chul-Ho Shin , Jong-Woo Sun
发明人： Sung-Wook Hwang , Do-Haing Lee , Chul-Ho Shin , Jong-Woo Sun
IPC分类号： G21K1/08 , H01J1/36 , H01J1/46
CPC分类号： H01J37/08 , H01J27/024 , H01J2237/061 , H01J2237/3151 , H01J2237/31701
摘要： An apparatus and/or method for controlling an ion beam may be provided, and/or a method for preparing an extraction electrode for the same may be provided. In the apparatus, a plurality of extraction electrodes may be disposed in a path of an ion beam. At least one extraction electrode may include a plurality of sub-grids.
摘要翻译：可以提供用于控制离子束的装置和/或方法，和/或可以提供用于制备其的提取电极的方法。在该装置中，多个提取电极可以设置在离子束的路径中。至少一个提取电极可以包括多个子网格。

2. 发明申请

US20070181820A1 Apparatus and method for controlling ion beam 有权
标题翻译：用于控制离子束的装置和方法
公开(公告)号：US20070181820A1
公开(公告)日：2007-08-09
申请号：US11703130
申请日：2007-02-07
申请人： Sung-Wook Hwang , Do-Haing Lee , Chul-Ho Shin , Jong-Woo Sun
发明人： Sung-Wook Hwang , Do-Haing Lee , Chul-Ho Shin , Jong-Woo Sun
IPC分类号： H01J3/14
CPC分类号： H01J37/08 , H01J27/024 , H01J2237/061 , H01J2237/3151 , H01J2237/31701
摘要： An apparatus and/or method for controlling an ion beam may be provided, and/or a method for preparing an extraction electrode for the same may be provided. In the apparatus, a plurality of extraction electrodes may be disposed in a path of an ion beam. At least one extraction electrode may include a plurality of sub-grids.
摘要翻译：可以提供用于控制离子束的装置和/或方法，和/或可以提供用于制备其的提取电极的方法。在该装置中，多个提取电极可以设置在离子束的路径中。至少一个提取电极可以包括多个子网格。

3. 发明授权

US07564042B2 Ion beam apparatus having plasma sheath controller 失效
标题翻译：具有等离子体鞘控制器的离子束装置
公开(公告)号：US07564042B2
公开(公告)日：2009-07-21
申请号：US11834561
申请日：2007-08-06
申请人： Do-Haing Lee , Sung-Wook Hwang , Chul-Ho Shin
发明人： Do-Haing Lee , Sung-Wook Hwang , Chul-Ho Shin
IPC分类号： H05H1/02 , H01J3/14 , H01J37/08
CPC分类号： H01J37/08 , H01J27/024 , H01J37/3053 , H01J2237/061 , H01J2237/24542
摘要： An ion beam apparatus includes a plasma chamber with a grid assembly installed at one end of the plasma chamber and a plasma sheath controller disposed between the plasma chamber and the grid assembly. The grid assembly includes first ion extraction apertures. The plasma sheath controller includes second ion extraction apertures smaller than the first ion extraction apertures. When the plasma sheath controller is used in this configuration, the surface of the plasma takes on a more planar configuration adjacent the controller so that ions, extracted from the plasma in a perpendicular direction to the plasma surface, pass cleanly through the apertures of the grid assembly rather than collide with the sidewalls of the grid assembly apertures. A semiconductor manufacturing apparatus and method for forming an ion beam are also provided.
摘要翻译：离子束装置包括等离子体室，其中安装在等离子体室的一端的栅格组件和设置在等离子体室和栅格组件之间的等离子体鞘控制器。栅格组件包括第一离子提取孔。等离子体鞘控制器包括比第一离子提取孔小的第二离子提取孔。当在该构造中使用等离子体鞘控制器时，等离子体的表面具有与控制器相邻的更平面的配置，使得从垂直于等离子体表面的方向从等离子体提取的离子通过网格的孔组件而不是与栅格组件孔的侧壁碰撞。还提供了用于形成离子束的半导体制造装置和方法。

4. 发明申请

US20050194361A1 Neutral beam source having electromagnet used for etching semiconductor device 失效
标题翻译：具有用于蚀刻半导体器件的电磁体的中性束源
公开(公告)号：US20050194361A1
公开(公告)日：2005-09-08
申请号：US10825099
申请日：2004-04-16
申请人： Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park
发明人： Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park
IPC分类号： H01L21/3065 , B23K9/00
CPC分类号： H01L21/3065 , H01J37/321 , H01J37/32422 , H01J37/3266 , H01L21/31116 , H05H3/02
摘要： Disclosed is a neutral beam source used for etching a semiconductor device. The neutral beam source includes a plasma chamber having quartz provided at an outer wall thereof with an RF coil, a grid assembly, a reflective member, and an electromagnet arranged around the plasma chamber while surrounding the plasma chamber. Plasma density becomes high due to the magnetic field applied to the plasma chamber so that an amount of ion flux is increased.
摘要翻译：公开了一种用于蚀刻半导体器件的中性束源。中性束源包括具有在其外壁处设置有RF线圈的石英等离子体室，栅格组件，反射构件和围绕等离子体室围绕等离子体室的电磁体。由于施加到等离子体室的磁场，等离子体密度变高，使得离子通量增加。

5. 发明授权

US07060931B2 Neutral beam source having electromagnet used for etching semiconductor device 失效
标题翻译：具有用于蚀刻半导体器件的电磁体的中性束源
公开(公告)号：US07060931B2
公开(公告)日：2006-06-13
申请号：US10825099
申请日：2004-04-16
申请人： Geun-Young Yeom , Do-Haing Lee , Byoung Jac Park
发明人： Geun-Young Yeom , Do-Haing Lee , Byoung Jac Park
IPC分类号： B23K9/00
CPC分类号： H01L21/3065 , H01J37/321 , H01J37/32422 , H01J37/3266 , H01L21/31116 , H05H3/02
摘要： Disclosed is a neutral beam source used for etching a semiconductor device. The neutral beam source includes a plasma chamber having quartz provided at an outer wall thereof with an RF coil, a grid assembly, a reflective member, and an electromagnet arranged around the plasma chamber while surrounding the plasma chamber. Plasma density becomes high due to the magnetic field applied to the plasma chamber so that an amount of ion flux is increased.
摘要翻译：公开了一种用于蚀刻半导体器件的中性束源。中性束源包括具有在其外壁处设置有RF线圈的石英等离子体室，栅格组件，反射构件和围绕等离子体室围绕等离子体室的电磁体。由于施加到等离子体室的磁场，等离子体密度变高，使得离子通量增加。

6. 发明申请

US20050189482A1 3-GRID NEUTRAL BEAM SOURCE USED FOR ETCHING SEMICONDUCTOR DEVICE 失效
标题翻译：用于蚀刻半导体器件的3芯中性束源
公开(公告)号：US20050189482A1
公开(公告)日：2005-09-01
申请号：US10814148
申请日：2004-04-01
申请人： Geun-Young Yeom , Do-Haing Lee , Byoung Park
发明人： Geun-Young Yeom , Do-Haing Lee , Byoung Park
IPC分类号： H01L21/3065 , H05H3/02
CPC分类号： H05H3/02
摘要： Disclosed is a 3-grid neutral beam source used for etching a semiconductor device. The 3-grid neutral beam source includes a plasma generating chamber, a grid assembly including first to third grids, which are sequentially overlapped with each other by interposing an insulation material therebetween for obtaining a great amount of ion flux at a low ion energy, and a reflective member for converting an ion beam into a neutral beam by reflecting the ion beam. The semiconductor device is prevented from being damaged due to reduced kinetic energy of ions, and an etch rate of the semiconductor device is improved.
摘要翻译：公开了一种用于蚀刻半导体器件的3栅极中性束源。三栅中性束源包括等离子体发生室，包括第一至第三栅极的栅格组件，其通过在其间插入绝缘材料而相互重叠，以在低离子能量下获得大量的离子通量，以及用于通过反射离子束将离子束转换成中立光束的反射构件。防止半导体器件由于离子的动能降低而被损坏，并且提高了半导体器件的蚀刻速率。

7. 发明授权

US08900944B2 Methods of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08900944B2
公开(公告)日：2014-12-02
申请号：US13307270
申请日：2011-11-30
申请人： Soo-Yeon Jeong , Myeong-Cheol Kim , Do-Hyoung Kim , Do-Haing Lee , Nam-Myun Cho , In-Ho Kim
发明人： Soo-Yeon Jeong , Myeong-Cheol Kim , Do-Hyoung Kim , Do-Haing Lee , Nam-Myun Cho , In-Ho Kim
IPC分类号： H01L21/8238 , H01L29/49 , H01L29/66 , H01L21/768 , H01L21/285
CPC分类号： H01L27/088 , H01L21/28518 , H01L21/76897 , H01L29/45 , H01L29/49 , H01L29/66545
摘要： A method of manufacturing a semiconductor device includes forming a gate structure through a first insulating interlayer on a substrate such that the gate structure includes a spacer on a sidewall thereof, forming a first hard mask on the gate structure, partially removing the first insulating interlayer using the first hard mask as an etching mask to form a first contact hole such that the first contact hole exposes a top surface of the substrate, forming a metal silicide pattern on the top surface of the substrate exposed by the first contact hole, and forming a plug electrically connected to the metal silicide pattern.
摘要翻译：一种制造半导体器件的方法包括通过基板上的第一绝缘中间层形成栅极结构，使得栅极结构在其侧壁上包括间隔物，在栅极结构上形成第一硬掩模，使用所述第一硬掩模作为蚀刻掩模以形成第一接触孔，使得所述第一接触孔暴露所述基板的顶表面，在所述基板的由所述第一接触孔暴露的所述顶表面上形成金属硅化物图案，并形成插头电连接到金属硅化物图案。

8. 发明申请

US20120156867A1 METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120156867A1
公开(公告)日：2012-06-21
申请号：US13307270
申请日：2011-11-30
申请人： Soo-Yeon Jeong , Myeong-Cheol Kim , Do-Hyoung Kim , Do-Haing Lee , Nam-Myun Cho , In-Ho Kim
发明人： Soo-Yeon Jeong , Myeong-Cheol Kim , Do-Hyoung Kim , Do-Haing Lee , Nam-Myun Cho , In-Ho Kim
IPC分类号： H01L21/283
CPC分类号： H01L27/088 , H01L21/28518 , H01L21/76897 , H01L29/45 , H01L29/49 , H01L29/66545
摘要： A method of manufacturing a semiconductor device includes forming a gate structure through a first insulating interlayer on a substrate such that the gate structure includes a spacer on a sidewall thereof, forming a first hard mask on the gate structure, partially removing the first insulating interlayer using the first hard mask as an etching mask to form a first contact hole such that the first contact hole exposes a top surface of the substrate, forming a metal silicide pattern on the top surface of the substrate exposed by the first contact hole, and forming a plug electrically connected to the metal silicide pattern.
摘要翻译：一种制造半导体器件的方法包括通过基板上的第一绝缘中间层形成栅极结构，使得栅极结构在其侧壁上包括间隔物，在栅极结构上形成第一硬掩模，使用所述第一硬掩模作为蚀刻掩模以形成第一接触孔，使得所述第一接触孔暴露所述基板的顶表面，在所述基板的由所述第一接触孔暴露的所述顶表面上形成金属硅化物图案，并形成插头电连接到金属硅化物图案。

9. 发明申请

US20090140132A1 APPARATUS AND METHOD FOR PROCESSING SUBSTRATE USING NEUTRALIZED BEAMS INCLUDING APPLYING A VOLTAGE TO A SUBSTRATE SUPPORT 有权
标题翻译：使用中性线处理基板的装置和方法，包括将电压应用于基板支持
公开(公告)号：US20090140132A1
公开(公告)日：2009-06-04
申请号：US12323783
申请日：2008-11-26
申请人： Do-Haing Lee , Ha-Na Kim , Yong-Jin Kim
发明人： Do-Haing Lee , Ha-Na Kim , Yong-Jin Kim
IPC分类号： H05H3/02
CPC分类号： H01J37/30 , H01J2237/0041 , H01J2237/04756 , H01J2237/20 , H01J2237/31
摘要： An apparatus and method for processing a substrate using neutralized beams are provided. A substrate processing apparatus includes an ion source generating device configured to form an ion source. An ion extraction device is configured to extract and accelerate ions from the ion source. An ion neutralizing device is configured to convert the ions extracted and accelerated from the ion extraction device into neutralized beams. A remaining portion of the ions extracted and accelerated from the ion extraction device is not converted into the neutralized beams. A substrate support is configured to support a substrate such that the neutralized beams are directed towards the substrate support. A substrate power supply is configured to apply a voltage to the substrate support such that the remaining portion of the ions that is not converted into the neutralized beams is directed away from the substrate support by the applied voltage of the substrate.
摘要翻译：提供了一种使用中和束来处理衬底的设备和方法。衬底处理装置包括被配置为形成离子源的离子源生成装置。离子提取装置被配置为从离子源提取和加速离子。离子中和装置被配置为将从离子提取装置提取和加速的离子转化成中和的束。从离子提取装置提取和加速的离子的剩余部分不被转换成中和的束。衬底支撑件被配置为支撑衬底，使得中和的光束被引向衬底支撑件。衬底电源被配置为向衬底支撑件施加电压，使得未转换成中和束的离子的剩余部分通过衬底的施加电压被引导离开衬底支撑。

10. 发明授权

US08450680B2 Apparatus and method for processing substrate using neutralized beams including applying a voltage to a substrate support 有权
标题翻译：用于使用中和束处理衬底的装置和方法，包括向衬底支撑件施加电压
公开(公告)号：US08450680B2
公开(公告)日：2013-05-28
申请号：US13306364
申请日：2011-11-29
申请人： Do-Haing Lee , Ha-Na Kim , Yong-Jin Kim
发明人： Do-Haing Lee , Ha-Na Kim , Yong-Jin Kim
IPC分类号： H05H3/02
CPC分类号： H01J37/30 , H01J2237/0041 , H01J2237/04756 , H01J2237/20 , H01J2237/31
摘要： An apparatus and method for processing a substrate using neutralized beams are provided. A substrate processing apparatus includes an ion source generating device configured to form an ion source. An ion extraction device is configured to extract and accelerate ions from the ion source. An ion neutralizing device is configured to convert the ions extracted and accelerated from the ion extraction device into neutralized beams. A remaining portion of the ions extracted and accelerated from the ion extraction device is not converted into the neutralized beams. A substrate support is configured to support a substrate such that the neutralized beams are directed towards the substrate support. A substrate power supply is configured to apply a voltage to the substrate support such that the remaining portion of the ions that is not converted into the neutralized beams is directed away from the substrate support by the applied voltage of the substrate.
摘要翻译：提供了一种使用中和束来处理衬底的设备和方法。衬底处理装置包括被配置为形成离子源的离子源生成装置。离子提取装置被配置为从离子源提取和加速离子。离子中和装置被配置为将从离子提取装置提取和加速的离子转化成中和的束。从离子提取装置提取和加速的离子的剩余部分不被转换成中和的束。衬底支撑件被配置为支撑衬底，使得中和的光束被引向衬底支撑件。衬底电源被配置为向衬底支撑件施加电压，使得未转换成中和束的离子的剩余部分通过衬底的施加电压被引导离开衬底支撑。

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