专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080131660A1 Three-Dimensional Photonic Crystal and its Manufacturing Method Thereof 有权
标题翻译：三维光子晶体及其制造方法
公开(公告)号：US20080131660A1
公开(公告)日：2008-06-05
申请号：US11885546
申请日：2006-03-03
申请人： Susumu Noda , Makoto Okano , Masahiro Imada , Shigeki Takahashi
发明人： Susumu Noda , Makoto Okano , Masahiro Imada , Shigeki Takahashi
IPC分类号： B32B3/10 , B29D11/00
CPC分类号： H01S5/10 , B82Y20/00 , G02B6/1225 , G02B6/136 , H01S5/105 , Y10T428/24331
摘要： An object of the present invention is to provide a three-dimensional photonic crystal which allows an internal formation of a defect structure with an arbitrary shape and size. Multiple holes extending to two different directions are formed obliquely to a base body surface in order to form a first crystal and a second crystal. Base body left between the holes are made to be rods. Moreover, a connection crystal layers is formed by a part of rods having a size different from that of the rods in the first crystal and the second crystal. The connection crystal layer is held between the first crystal and the second crystal and they are fused. In a three-dimensional photonic crystal thus obtained, the rod becomes a point defect. The shape and size of the point defect can be arbitrarily set in any directions within the connection crystal layer. The shape and size of the point defect can also be controlled by adjusting the thickness of the connection crystal layer.
摘要翻译：本发明的目的是提供一种能够内部形成任意形状和尺寸的缺陷结构的三维光子晶体。延伸到两个不同方向的多个孔相对于基体表面倾斜地形成，以便形成第一晶体和第二晶体。留在孔之间的基体被制成棒。此外，连接晶体层由具有与第一晶体和第二晶体中的棒的尺寸不同的尺寸的棒的一部分形成。连接晶体层保持在第一晶体和第二晶体之间并且熔合。在由此获得的三维光子晶体中，棒变成点缺陷。点缺陷的形状和尺寸可以在连接晶体层内的任何方向任意设置。也可以通过调整连接晶体层的厚度来控制点缺陷的形状和尺寸。

2. 发明授权

US08009953B2 Three-dimensional photonic crystal and its manufacturing method thereof 有权
标题翻译：三维光子晶体及其制造方法
公开(公告)号：US08009953B2
公开(公告)日：2011-08-30
申请号：US11885546
申请日：2006-03-03
申请人： Susumu Noda , Makoto Okano , Masahiro Imada , Shigeki Takahashi
发明人： Susumu Noda , Makoto Okano , Masahiro Imada , Shigeki Takahashi
IPC分类号： G02B6/10
CPC分类号： H01S5/10 , B82Y20/00 , G02B6/1225 , G02B6/136 , H01S5/105 , Y10T428/24331
摘要： An object of the present invention is to provide a three-dimensional photonic crystal which allows an internal formation of a defect structure with an arbitrary shape and size. Multiple holes extending to two different directions are formed obliquely to a base body surface in order to form a first crystal and a second crystal. Base body left between the holes are made to be rods. Moreover, a connection crystal layer is formed by a part of rods having a size different from that of the rods in the first crystal and the second crystal. The connection crystal layer is held between the first crystal and the second crystal and they are fused. In a three-dimensional photonic crystal thus obtained, the rod becomes a point defect. The shape and size of the point defect can be arbitrarily set in any directions within the connection crystal layer. The shape and size of the point defect can also be controlled by adjusting the thickness of the connection crystal layer.
摘要翻译：本发明的目的是提供一种能够内部形成任意形状和尺寸的缺陷结构的三维光子晶体。延伸到两个不同方向的多个孔相对于基体表面倾斜地形成，以便形成第一晶体和第二晶体。留在孔之间的基体被制成棒。此外，连接晶体层由具有与第一晶体和第二晶体中的棒的尺寸不同的尺寸的棒的一部分形成。连接晶体层保持在第一晶体和第二晶体之间并且熔合。在由此获得的三维光子晶体中，棒变成点缺陷。点缺陷的形状和尺寸可以在连接晶体层内的任何方向任意设置。也可以通过调整连接晶体层的厚度来控制点缺陷的形状和尺寸。

3. 发明申请

US20090034566A1 Photonic crystal laser 有权
标题翻译：光子晶体激光器
公开(公告)号：US20090034566A1
公开(公告)日：2009-02-05
申请号：US11919344
申请日：2005-04-28
申请人： Susumu Noda , Masahiro Imada , Dai Ohnishi
发明人： Susumu Noda , Masahiro Imada , Dai Ohnishi
IPC分类号： H01S3/16
CPC分类号： H01S5/0425 , B41J2/45 , H01S5/06243 , H01S5/105 , H01S5/18 , H01S2301/18
摘要： One objective of the present invention is to provide a laser device which is capable of scanning beams of a laser light of high output power at a high speed without using mechanical scanning mechanisms. A plurality of the upper electrodes 33 is linearly arranged in the photonic crystal laser provided with an active layer 21 and a two-dimensional photonic crystal layer 23 which are held between upper electrodes 33 and a lower electrode 27. A current is introduced from one upper electrode 33 or the plurality of the upper electrodes 33 disposed adjacently. Therefore, the active layer 21 generates light and the light is intensified by diffraction in the two-dimensional photonic crystal layer 23, so that a stronger laser light is emitted to the outside from around the upper electrodes 33 into which a current is introduced. When the current-injected upper electrodes are sequentially switched, a laser light scan is performed in the direction of the array of the upper electrodes. Since this switching can be made electrically, a laser light scan can be achieved at a high speed without using the mechanical scanning mechanisms.
摘要翻译：本发明的一个目的是提供一种能够在不使用机械扫描机构的情况下高速扫描高输出功率的激光的光束的激光装置。多个上部电极33线性排列在设置有被保持在上部电极33和下部电极27之间的有源层21和二维光子晶体层23的光子晶体激光器中。从一个上部电极引入电流电极33或相邻设置的多个上电极33。因此，有源层21产生光，并且通过二维光子晶体层23中的衍射增强光，使得更强的激光从引入电流的上电极33的周围向外部发射。当依次切换电流注入的上电极时，在上电极阵列的方向上执行激光扫描。由于可以进行该切换，因此可以在不使用机械扫描机构的情况下高速实现激光扫描。

4. 发明授权

US07860141B2 Photonic crystal laser 有权
标题翻译：光子晶体激光器
公开(公告)号：US07860141B2
公开(公告)日：2010-12-28
申请号：US11919344
申请日：2005-04-28
申请人： Susumu Noda , Masahiro Imada , Dai Ohnishi
发明人： Susumu Noda , Masahiro Imada , Dai Ohnishi
IPC分类号： H01S5/00
CPC分类号： H01S5/0425 , B41J2/45 , H01S5/06243 , H01S5/105 , H01S5/18 , H01S2301/18
摘要： One objective of the present invention is to provide a laser device which is capable of scanning beams of a laser light of high output power at a high speed without using mechanical scanning mechanisms. A plurality of the upper electrodes 33 is linearly arranged in the photonic crystal laser provided with an active layer 21 and a two-dimensional photonic crystal layer 23 which are held between upper electrodes 33 and a lower electrode 27. A current is introduced from one upper electrode 33 or the plurality of the upper electrodes 33 disposed adjacently. Therefore, the active layer 21 generates light and the light is intensified by diffraction in the two-dimensional photonic crystal layer 23, so that a stronger laser light is emitted to the outside from around the upper electrodes 33 into which a current is introduced. When the current-injected upper electrodes are sequentially switched, a laser light scan is performed in the direction of the array of the upper electrodes. Since this switching can be made electrically, a laser light scan can be achieved at a high speed without using the mechanical scanning mechanisms.
摘要翻译：本发明的一个目的是提供一种能够在不使用机械扫描机构的情况下高速扫描高输出功率的激光的光束的激光装置。多个上部电极33线性排列在设置有被保持在上部电极33和下部电极27之间的有源层21和二维光子晶体层23的光子晶体激光器中。从一个上部电极引入电流电极33或相邻设置的多个上电极33。因此，有源层21产生光，并且通过二维光子晶体层23中的衍射增强光，使得更强的激光从引入电流的上电极33的周围向外部发射。当依次切换电流注入的上电极时，在上电极阵列的方向上执行激光扫描。由于可以进行该切换，因此可以在不使用机械扫描机构的情况下高速实现激光扫描。

5. 发明授权

US08986558B2 Plasma etching method, plasma etching device, and method for producing photonic crystal 有权
标题翻译：等离子体蚀刻方法，等离子体蚀刻装置以及制造光子晶体的方法
公开(公告)号：US08986558B2
公开(公告)日：2015-03-24
申请号：US13061252
申请日：2009-08-27
申请人： Susumu Noda , Shigeki Takahashi
发明人： Susumu Noda , Shigeki Takahashi
IPC分类号： H01L21/3065 , G02B1/00 , B82Y20/00
CPC分类号： G02B1/005 , B82Y20/00 , H01J2237/3327 , H01L21/3065
摘要： A plasma etching method capable of oblique etching with a high aspect ratio and high uniformity is provided. In the plasma etching method, a base body is etched with a high aspect ratio by the following process: An electric-field control device having an ion-introducing orifice penetrating therethrough in a direction inclined from the normal to the surface of a base body is placed on or above the surface of this base body. Plasma is generated on the surface of the base body on or above which the electric-field control is placed. A potential difference is formed between the plasma and the base body so as to attract ions in the plasma toward the base body.
摘要翻译：提供了能够以高纵横比和高均匀性进行倾斜蚀刻的等离子体蚀刻方法。在等离子体蚀刻方法中，通过以下处理以高纵横比来蚀刻基体：具有从基体的法线垂直的方向贯通的离子引入孔的电场控制装置是放置在该基体的表面上或上方。在其上放置电场控制的基体的表面上产生等离子体。在等离子体和基体之间形成电位差，以将等离子体中的离子吸引到基体。

6. 发明申请

US20110151673A1 PLASMA ETCHING METHOD, PLASMA ETCHING DEVICE, AND METHOD FOR PRODUCING PHOTONIC CRYSTAL 有权
标题翻译：等离子体蚀刻方法，等离子体蚀刻装置和用于生产光子晶体的方法
公开(公告)号：US20110151673A1
公开(公告)日：2011-06-23
申请号：US13061252
申请日：2009-08-27
申请人： Susumu Noda , Shigeki Takahashi
发明人： Susumu Noda , Shigeki Takahashi
IPC分类号： H01L21/3065 , C23F1/08 , H01L21/00 , G02B1/12
CPC分类号： G02B1/005 , B82Y20/00 , H01J2237/3327 , H01L21/3065
摘要： A plasma etching method capable of oblique etching with a high aspect ratio and high uniformity is provided. In the plasma etching method, a base body is etched with a high aspect ratio by the following process: An electric-field control device having an ion-introducing orifice penetrating therethrough in a direction inclined from the normal to the surface of a base body is placed on or above the surface of this base body. Plasma is generated on the surface of the base body on or above which the electric-field control is placed. A potential difference is formed between the plasma and the base body so as to attract ions in the plasma toward the base body.
摘要翻译：提供了能够以高纵横比和高均匀性进行倾斜蚀刻的等离子体蚀刻方法。在等离子体蚀刻方法中，通过以下处理以高纵横比来蚀刻基体：具有从基体的法线垂直的方向贯通的离子引入孔的电场控制装置是放置在该基体的表面上或上方。在其上放置电场控制的基体的表面上产生等离子体。在等离子体和基体之间形成电位差，以将等离子体中的离子吸引到基体。

7. 发明授权

US09324891B2 Solar cell, solar cell panel, and device comprising solar cell 有权
标题翻译：太阳能电池，太阳能电池板和包括太阳能电池的装置
公开(公告)号：US09324891B2
公开(公告)日：2016-04-26
申请号：US13518308
申请日：2010-12-22
申请人： Hiroaki Shigeta , Yuhji Yashiro , Yuhsuke Tsuda , Shintaro Miyanishi , Susumu Noda , Masayuki Fujita , Yoshinori Tanaka
发明人： Hiroaki Shigeta , Yuhji Yashiro , Yuhsuke Tsuda , Shintaro Miyanishi , Susumu Noda , Masayuki Fujita , Yoshinori Tanaka
IPC分类号： H01L31/0232 , H01L31/0352 , H01L31/075 , H01L31/0392
CPC分类号： H01L31/035227 , H01L31/0232 , H01L31/02327 , H01L31/035281 , H01L31/0392 , H01L31/03921 , H01L31/054 , H01L31/075 , Y02E10/52 , Y02E10/548
摘要： A solar cell (1) of the present invention includes a photoelectric conversion layer (2) and a photonic crystal provided inside the photoelectric conversion layer (2) in order to have a photonic band gap. The photonic crystal has defects (31) in order to provide a defect level in the photonic band gap. QV which is a Q value representing a magnitude of a resonance effect yielded by coupling between the photonic crystal and an outside is substantially equal to Qα which is a Q value representing a magnitude of a resonance effect yielded by a medium of the photoelectric conversion layer (2).
摘要翻译：本发明的太阳能电池（1）包括光电转换层（2）和设置在光电转换层（2）内的光子晶体，以便具有光子带隙。光子晶体具有缺陷（31），以便提供光子带隙中的缺陷水平。 QV是表示由光子晶体与外部之间的耦合产生的共振效应的大小的Q值，基本上等于作为表示由光电转换层的介质产生的共振效应的大小的Q值的Qα（ 2）。

8. 发明授权

US08704253B2 Light-emitting device and organic electroluminescence light-emitting device 失效
标题翻译：发光元件及有机电致发光元件
公开(公告)号：US08704253B2
公开(公告)日：2014-04-22
申请号：US10550653
申请日：2004-03-19
申请人： Susumu Noda , Takashi Asano , Masayuki Fujita , Hiroshi Ohata
发明人： Susumu Noda , Takashi Asano , Masayuki Fujita , Hiroshi Ohata
IPC分类号： H01L33/00
CPC分类号： H01L51/5275 , H01L51/0035 , H01L51/0036 , H01L51/0037 , H01L51/0038 , H01L51/0051 , H01L51/0052 , H01L51/0059 , H01L51/007 , H01L51/5262
摘要： In conventional organic EL light-emitting devices, the ITO used for a transparent electrode has a refractive index of about 2.0 larger than the refractive index of 1.5 of a transparent glass substrate. As a result, the mode of most of light traveling from the transparent electrode toward the glass substrate is the transparent electrode guided mode, and no light is emitted from the transparent electrode toward the glass substrate. According to the invention, the light extraction efficiency of conventional light-emitting devices such as organic EL light-emitting devices is improved by using mode conversion means so as to solve the problem that conventional light-emitting devices such as organic EL light-emitting devices have low light extraction efficiencies. A light-emitting device of the invention comprises a light-emitting layer on a substrate and mode conversion means for converting the mode from the guided mode into an emission mode. The mode conversion means is provided in the substrate, in the light-emitting layer, or at the interface between the substrate and the light-emitting layer.
摘要翻译：在传统的有机EL发光器件中，用于透明电极的ITO具有比透明玻璃衬底的折射率1.5大约2.0的折射率。结果，从透明电极朝向玻璃基板行进的大部分光的模式是透明电极引导模式，并且没有光从透明电极朝向玻璃基板发射。根据本发明，通过使用模式转换装置来提高诸如有机EL发光器件的常规发光装置的光提取效率，以解决诸如有机EL发光装置之类的常规发光装置的问题具有低光提取效率。本发明的发光装置包括在基板上的发光层和用于将模式从导模转换为发射模式的模式转换装置。模式转换装置设置在基板，发光层中或基板与发光层之间的界面处。

9. 发明授权

US08693516B2 Semiconductor surface light-emitting element and method of manufacturing thereof 有权
标题翻译：半导体表面发光元件及其制造方法
公开(公告)号：US08693516B2
公开(公告)日：2014-04-08
申请号：US13812561
申请日：2011-06-21
申请人： Kazuyoshi Hirose , Shinichi Furuta , Akiyoshi Watanabe , Takahiro Sugiyama , Kousuke Shibata , Yoshitaka Kurosaka , Susumu Noda
发明人： Kazuyoshi Hirose , Shinichi Furuta , Akiyoshi Watanabe , Takahiro Sugiyama , Kousuke Shibata , Yoshitaka Kurosaka , Susumu Noda
IPC分类号： H01S5/183
CPC分类号： H01S5/3013 , B82Y20/00 , G02B6/1225 , H01L33/005 , H01L2933/0083 , H01S5/105 , H01S5/18 , H01S5/3202 , H01S5/3432 , H01S2304/04
摘要： A semiconductor surface light-emitting element of this invention is provided with a photonic crystal layer 6 obtained by periodically forming a plurality of holes H in a basic layer 6A comprised of a first compound semiconductor of the zinc blend structure and growing embedded regions 6B comprised of a second compound semiconductor of the zinc blend structure, in the holes H, and an active layer 4 to supply light to the photonic crystal layer 6, in which a principal surface of the basic layer 6A is a (001) plane and in which side faces of each hole H have at least three different {100} facets.
摘要翻译：本发明的半导体表面发光元件设置有通过在由锌共混结构的第一化合物半导体构成的碱性层6A中周期性地形成多个孔H而获得的光子晶体层6和由在空穴H中的锌共混结构的第二化合物半导体和用于向光子晶体层6供应光的有源层4，其中基层6A的主表面是（001）面，并且在该侧每个孔H的面具有至少三个不同的{100}面。

10. 发明申请

US20090285255A1 Two-Dimensional Photonic Crystal Surface Emitting Laser Light Source 有权
标题翻译：二维光子晶体表面发射激光光源
公开(公告)号：US20090285255A1
公开(公告)日：2009-11-19
申请号：US12225194
申请日：2007-03-20
申请人： Kyosuke Sakai , Eiji Miyai , Susumu Noda , Dai Ohnishi , Wataru Kunishi
发明人： Kyosuke Sakai , Eiji Miyai , Susumu Noda , Dai Ohnishi , Wataru Kunishi
IPC分类号： H01S5/183
CPC分类号： H01S5/18 , B82Y20/00 , G11B7/127 , H01S5/0425 , H01S5/105 , H01S5/125 , H01S5/2027 , H01S5/34313 , H01S2301/14 , H01S2301/18
摘要： An objective of the present invention is to provide a surface emitting laser capable of selectively generating a laser oscillation in the fundamental mode and thereby emitting a single-wavelength laser light. In a surface emitting laser including an active layer and a two-dimensional photonic crystal provided on one side of the active layer, a reflector 45 or 46 is provided at least at a portion of the circumference of the two-dimensional photonic crystal. The reflector has a reflectance distribution in which the reflectance has a maximum value at a position where the amplitude envelope of the fundamental mode of an internal resonance light created within the two-dimensional photonic crystal. This design strengthens the fundamental mode while suppressing the second mode, thus enabling the laser oscillation in the fundamental mode to be selectively obtained, so that a single-wavelength laser light can be emitted.
摘要翻译：本发明的目的是提供一种能够选择性地在基模中产生激光振荡并从而发射单波长激光的表面发射激光器。在包括有源层和设置在有源层的一侧的二维光子晶体的表面发射激光器中，至少在二维光子晶体的圆周的一部分处提供反射器45或46。反射器具有反射率分布，其中反射率在二维光子晶体内产生的内部共振光的基模的幅度包络的位置处具有最大值。该设计在抑制第二模式的同时加强基本模式，从而能够选择性地获得基模中的激光振荡，从而可以发射单波长激光。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式