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    • 1. 发明授权
    • Three-dimensional photonic crystal and its manufacturing method thereof
    • 三维光子晶体及其制造方法
    • US08009953B2
    • 2011-08-30
    • US11885546
    • 2006-03-03
    • Susumu NodaMakoto OkanoMasahiro ImadaShigeki Takahashi
    • Susumu NodaMakoto OkanoMasahiro ImadaShigeki Takahashi
    • G02B6/10
    • H01S5/10B82Y20/00G02B6/1225G02B6/136H01S5/105Y10T428/24331
    • An object of the present invention is to provide a three-dimensional photonic crystal which allows an internal formation of a defect structure with an arbitrary shape and size. Multiple holes extending to two different directions are formed obliquely to a base body surface in order to form a first crystal and a second crystal. Base body left between the holes are made to be rods. Moreover, a connection crystal layer is formed by a part of rods having a size different from that of the rods in the first crystal and the second crystal. The connection crystal layer is held between the first crystal and the second crystal and they are fused. In a three-dimensional photonic crystal thus obtained, the rod becomes a point defect. The shape and size of the point defect can be arbitrarily set in any directions within the connection crystal layer. The shape and size of the point defect can also be controlled by adjusting the thickness of the connection crystal layer.
    • 本发明的目的是提供一种能够内部形成任意形状和尺寸的缺陷结构的三维光子晶体。 延伸到两个不同方向的多个孔相对于基体表面倾斜地形成,以便形成第一晶体和第二晶体。 留在孔之间的基体被制成棒。 此外,连接晶体层由具有与第一晶体和第二晶体中的棒的尺寸不同的尺寸的棒的一部分形成。 连接晶体层保持在第一晶体和第二晶体之间并且熔合。 在由此获得的三维光子晶体中,棒变成点缺陷。 点缺陷的形状和尺寸可以在连接晶体层内的任何方向任意设置。 也可以通过调整连接晶体层的厚度来控制点缺陷的形状和尺寸。
    • 2. 发明申请
    • Three-Dimensional Photonic Crystal and its Manufacturing Method Thereof
    • 三维光子晶体及其制造方法
    • US20080131660A1
    • 2008-06-05
    • US11885546
    • 2006-03-03
    • Susumu NodaMakoto OkanoMasahiro ImadaShigeki Takahashi
    • Susumu NodaMakoto OkanoMasahiro ImadaShigeki Takahashi
    • B32B3/10B29D11/00
    • H01S5/10B82Y20/00G02B6/1225G02B6/136H01S5/105Y10T428/24331
    • An object of the present invention is to provide a three-dimensional photonic crystal which allows an internal formation of a defect structure with an arbitrary shape and size. Multiple holes extending to two different directions are formed obliquely to a base body surface in order to form a first crystal and a second crystal. Base body left between the holes are made to be rods. Moreover, a connection crystal layers is formed by a part of rods having a size different from that of the rods in the first crystal and the second crystal. The connection crystal layer is held between the first crystal and the second crystal and they are fused. In a three-dimensional photonic crystal thus obtained, the rod becomes a point defect. The shape and size of the point defect can be arbitrarily set in any directions within the connection crystal layer. The shape and size of the point defect can also be controlled by adjusting the thickness of the connection crystal layer.
    • 本发明的目的是提供一种能够内部形成任意形状和尺寸的缺陷结构的三维光子晶体。 延伸到两个不同方向的多个孔相对于基体表面倾斜地形成,以便形成第一晶体和第二晶体。 留在孔之间的基体被制成棒。 此外,连接晶体层由具有与第一晶体和第二晶体中的棒的尺寸不同的尺寸的棒的一部分形成。 连接晶体层保持在第一晶体和第二晶体之间并且熔合。 在由此获得的三维光子晶体中,棒变成点缺陷。 点缺陷的形状和尺寸可以在连接晶体层内的任何方向任意设置。 也可以通过调整连接晶体层的厚度来控制点缺陷的形状和尺寸。
    • 3. 发明申请
    • Electron emission element
    • 电子发射元件
    • US20050212398A1
    • 2005-09-29
    • US11083095
    • 2005-03-18
    • Makoto OkanoTetsuya ImaiOsamu Kumasaka
    • Makoto OkanoTetsuya ImaiOsamu Kumasaka
    • H01J29/08H01J1/304H01J3/02H01J63/04
    • H01J3/021
    • By making a cathode substrate function as a cathode and applying a voltage to the cathode and an anode, an electron emission element emits an electron from an electron source provided on the cathode substrate, and irradiates the electron onto an electron irradiation surface formed on the anode surface. The electron source is thread-type and provided on the cathode substrate. A deflecting voltage generates the electric field around the electron source. The electron source including a charge receives a power from the generated electric field to curve. Therefore, an irradiation position of the electron moves on the electron irradiation surface. Since it becomes unnecessary to move the electron irradiation surface and the electron source, a configuration of the electron emission element or an apparatus including the electron emission element is not complicated, and can be miniaturized and simple. Further, since the electron source curves, a tip of the electron source and the electron irradiation surface can be close, and a size of a beam spot at the irradiation position can be maintained constant. Therefore, since a mechanism for correcting the size of the beam spot is unnecessary, the configuration of the electron emission element or the apparatus including the electron emission element can be much simpler.
    • 通过使阴极基板用作阴极并向阴极和阳极施加电压,电子发射元件从设置在阴极基板上的电子源发射电子,并将电子照射到形成在阳极上的电子照射表面 表面。 电子源为螺纹型,设在阴极基板上。 偏转电压产生电子源周围的电场。 包括电荷的电子源从产生的电场接收功率以进行曲线。 因此,电子的照射位置在电子照射面上移动。 由于不需要移动电子照射表面和电子源,因此电子发射元件或包括电子发射元件的装置的结构不复杂,并且可以小型化和简单化。 此外,由于电子源曲线,电子源的尖端和电子照射表面可以接近,并且照射位置处的光斑的尺寸可以保持恒定。 因此,由于不需要校正束斑的尺寸的机构,所以电子发射元件或包括电子发射元件的装置的结构可以简单得多。
    • 8. 发明授权
    • Recording method for multi-layer recording film
    • 多层记录膜的记录方法
    • US5117416A
    • 1992-05-26
    • US601636
    • 1990-10-23
    • Toshiyuki MiyaderaMakoto OkanoFumio Matsui
    • Toshiyuki MiyaderaMakoto OkanoFumio Matsui
    • G11B7/00G11B7/004G11B7/24G11B7/244G11B7/247
    • G11B7/24038G11B7/004G11B7/244G11B7/2472G11B7/2531Y10S430/146
    • A recording and readout method for a multi-layer recording film including providing a multi-layer recording film comprising a laminate of plural recording films having a light absorption band in a predetermined wavelength region and having an intrinsic absorption peak; and supplying to the multi-layer recording film a light having a wavelength which is substantially the same as that of the absorption peak of each recording film to effect recording and readout; wherein provided that the light absorption band of the recording film having the absorption peak on the longer wavelength side selected from adjacent absorption peaks is present in a wave length region which is shorter than the absorption peak wavelength on the shorter wavelength side; the recording film having the absorption peak on the shorter wavelength side is caused to have an absorbance which is higher than the absorbance of the recording film having the absorption peak on the longer wavelength side at the absorption peak wavelength on the shorter wavelength side; and the recording film having the absorption peak on the shorter wavelength side is irradiated with a light having a wavelength which is shorter than the light absorption band of the recording film having the absorption peak on the longer wavelength side.
    • 一种多层记录膜的记录和读出方法,包括提供多层记录膜,所述多层记录膜包括具有预定波长区域中的具有吸光带并具有固有吸收峰的多个记录膜的叠层; 并向所述多层记录膜提供具有与每个记录膜的吸收峰的波长基本相同的波长的光以进行记录和读出; 其特征在于,具有从相邻吸收峰中选择的较长波长侧的吸收峰的记录膜的光吸收带存在于比短波长侧的吸收峰值波长短的波长区域; 使在短波长侧具有吸收峰的记录膜的吸光度比在较短波长侧的吸收峰值波长的长波长侧具有吸收峰的记录膜的吸光度高; 并且在较短波长侧具有吸收峰的记录膜用比较长波长侧具有吸收峰的记录膜的光吸收带短的波长的光照射。
    • 9. 发明申请
    • Method of Selectively Applying Carbon Nanotube Catalyst
    • 选择性应用碳纳米管催化剂的方法
    • US20070265158A1
    • 2007-11-15
    • US11547105
    • 2005-03-28
    • Ayumi MitsumoriOsamu KumasakaMakoto OkanoTetsuya Imai
    • Ayumi MitsumoriOsamu KumasakaMakoto OkanoTetsuya Imai
    • B01J37/34
    • B01J37/342B01J23/74B01J35/0033B01J37/0215B01J37/0238B01J37/347B82Y10/00B82Y30/00H01J9/025H01J2201/30469
    • A method for applying a carbon nanotube growth catalyst to at least one specified location on a substrate surface of a substrate formed of conductive material, and the method includes a preparation step for preparing on the substrate a coating layer having a hole contacting the substrate surface at a location corresponding to the specified location. The method also includes a deposition step for forming by deposition a conical deposited material on a substrate surface portion contacting the hole by irradiating the substrate with electrically conductive material particles in a oblique direction from above the coating layer while rotating the substrate about a shaft perpendicular to the substrate surface, and for forming by deposition an eaves-like deposited layer which extends to close an opening of the hole. The method also includes a determination step for measuring a size of the opening in accordance with extension of the eaves-like deposited layer, and a catalyst applying step for applying the catalyst to a tip of the conical deposited material by way of irradiation of material particles of the catalyst via the opening when the opening is measured to have a specified size.
    • 一种将碳纳米管生长催化剂施加到由导电材料形成的基板的基板表面上的至少一个特定位置的方法,该方法包括制备步骤,用于在基板上制备具有与基板表面接触的孔的涂层 与指定位置相对应的位置。 所述方法还包括沉积步骤,用于通过在与所述孔接触的基底表面部分上沉积圆锥形沉积材料,通过从所述涂层上方沿倾斜方向照射所述基底导电材料颗粒,同时沿垂直于 衬底表面,并且用于通过沉积形成延伸以封闭孔的开口的檐状沉积层。 该方法还包括用于根据檐状沉积层的延伸来测量开口的尺寸的确定步骤,以及用于通过材料颗粒的照射将催化剂施加到锥形沉积材料的尖端的催化剂施加步骤 当开口被测量为具有特定尺寸时,该催化剂通过开口。