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    • 3. 发明授权
    • Cellulose acylate film, polarizing plate, and liquid crystal display device
    • 纤维素酰化物膜,偏振片和液晶显示装置
    • US07501167B2
    • 2009-03-10
    • US11523516
    • 2006-09-20
    • Susumu Sugiyama
    • Susumu Sugiyama
    • C08B3/18G02F1/13363
    • C08B3/16C08L1/14G02B5/3033Y10T428/1041Y10T428/105Y10T428/1077
    • A cellulose acylate film comprising cellulose acylate which has a degree of crystallinity represented by the following expression (I) of 0.9 or more, and satisfies the following expressions (II) and (III): Degree of crystallinity=(X-ray diffraction intensity at 2θ of 13°)/(X-ray diffraction intensity at 2θ of 12°);  Expression (I) 2.6≦A+B≦3.0; and  Expression (II) 0.5≦B≦1.2  Expression (III) wherein A represents a substitution degree by an acetyl group of a hydroxyl group in a glucose unit of the cellulose acylate, and B represents a substitution degree by a substituent having from 3 to 4 carbon atoms of a hydroxyl group of a glucose unit of the cellulose acylate.
    • 含有下述式(I)表示的结晶度为0.9以上且满足下述式(II)和(III)的结晶度的纤维素酰化物的纤维素酰化物膜:<?在线配方说明=“In 线结构=“铅”→>结晶度=(2θ的13°的X射线衍射强度)/(2θ的12°的X射线衍射强度); 表达式(I)<?in-line-formula description =“In-line Formulas”end =“tail”?> <?in-line-formula description =“In-line Formulas”end =“lead”?> 2.6 < = A + B <= 3.0; 和表达式(II)<?in-line-formula description =“In-line Formulas”end =“tail”?> <?in-line-formula description =“In-line Formulas”end =“lead”?> 0.5 其中A表示葡萄糖单元中羟基的乙酰基的取代度,其中A表示在葡萄糖单元中的羟基的乙酰基的取代度 的纤维素酰化物,B表示由纤维素酰化物的葡萄糖单元的羟基具有3至4个碳原子的取代基的取代度。
    • 9. 发明授权
    • Semiconductor pressure sensor
    • 半导体压力传感器
    • US5163329A
    • 1992-11-17
    • US635953
    • 1990-12-28
    • Keiichi ShimaokaOsamu TabataSusumu Sugiyama
    • Keiichi ShimaokaOsamu TabataSusumu Sugiyama
    • G01L9/00
    • G01L9/0055G01L9/0042
    • A semiconductor pressure sensor having a diaphragm formed over the surface of a semiconductor substrate by thin film forming technique is provided. The sensor comprises: a sacrificial film including a vanishable portion covering a pressure receiving region on the major surface of the semiconductor substrate and a diaphragm support portion covering the periphery of the pressure receiving region, the vanishable portion having an isotropic etching property along the pressure receiving region and the diaphragm support portion having an etching-resistant property; an insulation diaphragm film having an etching-resistant property formed on the major surface of the semiconductor substrate over the sacrificial film; at least one etching solution inlet port formed through the insulation diaphragm film to reach the vanishable portion of the sacrificial film; a reference pressure chamber formed by etching and removing at least the vanishable portion of the sacrificial film with an etching solution poured through the inlet port; and at least one strain gauge formed on the insulation diaphragm film in place at the pressure receiving region. The peripheral region of the movable diaphragm can be formed into a flat configuration without any stepped structure. Thus, the semiconductor pressure snesor has an improved characteristics.
    • 提供一种半导体压力传感器,其具有通过薄膜形成技术形成在半导体衬底的表面上的隔膜。 传感器包括:牺牲膜,其包括覆盖半导体基板的主表面上的受压区域的可消除部分和覆盖受压区域的周边的隔膜支撑部分,该可消除部分沿着压力接收具有各向同性蚀刻性质 区域和隔膜支撑部分具有耐蚀性; 在所述牺牲膜上形成在所述半导体衬底的主表面上的具有耐腐蚀性的绝缘膜膜; 至少一个蚀刻溶液入口通过绝缘膜膜形成以到达牺牲膜的可消除部分; 通过蚀刻并去除牺牲膜的可消除部分而形成的参考压力室,其中所述蚀刻溶液通过所述入口浇注; 以及在压力接收区域上形成在绝缘膜片上的至少一个应变仪。 可移动隔膜的周边区域可以形成为没有任何阶梯结构的平坦构造。 因此,半导体压力调节器具有改进的特性。