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1. 发明授权

US11569346B2 Semiconductor device with low random telegraph signal noise 有权
公开(公告)号：US11569346B2
公开(公告)日：2023-01-31
申请号：US17378505
申请日：2021-07-16
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
发明人： Kuo-Yu Chou , Seiji Takahashi , Shang-Fu Yeh , Chih-Lin Lee , Chin Yin , Calvin Yi-Ping Chao
IPC分类号： H01L29/06 , H01L29/78 , H01L29/10 , H01L29/08 , H01L21/762 , H01L21/308
摘要： A semiconductor device includes a source/drain diffusion area, a first doped region and a gate. The source/drain diffusion area, defined between a first isolation structure and a second isolation structure, includes a source region, a drain region and a device channel. The first doped region, disposed along a first junction between the device channel and the first isolation structure, is separated from at least one of the source region and the drain region. The first doped region has a dopant concentration higher than that of the device channel. The gate is disposed over the source/drain diffusion area. The first doped region is located within a projected area of the gate onto the source/drain diffusion area, the first isolation structure and the second isolation structure. A length of the first doped region is shorter than a length of the gate in a direction from the source region to the drain region.

2. 发明授权

US10510835B2 Semiconductor device with low random telegraph signal noise 有权
公开(公告)号：US10510835B2
公开(公告)日：2019-12-17
申请号：US15965610
申请日：2018-04-27
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
发明人： Kuo-Yu Chou , Seiji Takahashi , Shang-Fu Yeh , Chih-Lin Lee , Chin Yin , Calvin Yi-Ping Chao
IPC分类号： H01L29/06 , H01L21/762 , H01L29/78 , H01L29/10 , H01L29/08 , H01L21/308
摘要： A semiconductor device comprises a source/drain diffusion area, and a first doped region. The source/drain diffusion area is defined between a first isolation structure and a second isolation structure. The source/drain diffusion area includes a source region, a drain region, and a device channel. The device channel is between the source region and the drain region. The first doped region is disposed along a first junction between the device channel and the first isolation structure in a direction from the source region to the drain region. The first doped region is separated from at least one of the source region and the drain region, and has a dopant concentration higher than that of the device channel. The semiconductor device of the present disclosure has low random telegraph signal noise and fewer defects.

3. 发明授权

US10096645B2 Method and apparatus for image sensor packaging 有权
公开(公告)号：US10096645B2
公开(公告)日：2018-10-09
申请号：US15193812
申请日：2016-06-27
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Szu-Ying Chen , Ping-Yin Liu , Calvin Yi-Ping Chao , Tzu-Jui Wang , Jen-Cheng Liu , Dun-Nian Yaung , Lan-Lin Chao
IPC分类号： H01L27/00 , H01L27/146 , H01L25/16
摘要： Methods and apparatus for packaging a backside illuminated (BSI) image sensor or a sensor device with an application specific integrated circuit (ASIC) are disclosed. According to an embodiment, a sensor device may be bonded together face-to-face with an ASIC without using a carrier wafer, where corresponding bond pads of the sensor are aligned with bond pads of the ASIC and bonded together, in a one-to-one fashion. A column of pixels of the sensor may share a bond pad connected by a shared inter-metal line. The bond pads may be of different sizes and configured in different rows to be disjoint from each other. Additional dummy pads may be added to increase the bonding strength between the sensor and the ASIC.

4. 发明授权

US09202963B2 Dual-side illumination image sensor chips and methods for forming the same 有权
标题翻译：双面照明图像传感器芯片及其形成方法
公开(公告)号：US09202963B2
公开(公告)日：2015-12-01
申请号：US13683819
申请日：2012-11-21
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chih-Min Liu , Honyih Tu , Calvin Yi-Ping Chao , Fu-Lung Hsueh
IPC分类号： H01L31/18 , H01L27/146
CPC分类号： H01L27/14634 , H01L27/14618 , H01L27/14636 , H01L27/1464 , H01L27/1469 , H01L31/18 , H01L2224/48091 , H01L2224/73265 , H04N5/378 , H01L2924/00014
摘要： A Dual-Side Illumination (DSI) image sensor chip includes a first image sensor chip configured to sense light from a first direction, and a second image sensor chip aligned to, and bonded to, the first image sensor chip. The second image sensor chip is configured to sense light from a second direction opposite the first direction.
摘要翻译：双面照明（DSI）图像传感器芯片包括被配置为感测来自第一方向的光的第一图像传感器芯片和与第一图像传感器芯片对准并与其结合的第二图像传感器芯片。第二图像传感器芯片被配置为感测来自与第一方向相反的第二方向的光。

5. 发明授权

US09838620B2 Sensor having depth sensing pixel and method of using the same 有权
公开(公告)号：US09838620B2
公开(公告)日：2017-12-05
申请号：US15404908
申请日：2017-01-12
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Calvin Yi-Ping Chao , Kuo-Yu Chou , Chih-Min Liu
IPC分类号： H01L27/146 , H04N5/33 , G06T7/50 , H04N5/225 , H04N9/04 , H04N5/247
CPC分类号： H04N5/332 , G06T7/50 , H01L27/146 , H01L27/14603 , H01L27/14605 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/14621 , H01L27/14627 , H01L27/14634 , H01L27/14636 , H01L27/14641 , H01L27/14643 , H01L27/14645 , H01L27/14649 , H01L27/14689 , H01L27/1469 , H04N5/2253 , H04N5/247 , H04N5/3696 , H04N5/3745 , H04N5/37452 , H04N9/045 , H04N2209/045
摘要： A sensor includes a plurality of image sensors, wherein each image sensor of the plurality of image sensors is configured to detect a first spectrum of light. The sensor further includes a depth sensing pixel bonded to each image sensor of the plurality of image sensors, wherein the depth sensing pixel is configured to detect a second spectrum of light different from the first spectrum.

6. 发明授权

US09369652B2 Readout device with readout circuit 有权
标题翻译：带读出电路的读出装置
公开(公告)号：US09369652B2
公开(公告)日：2016-06-14
申请号：US14680583
申请日：2015-04-07
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Po-Sheng Chou , Calvin Yi-Ping Chao , Kuo-Yu Chou , Honyih Tu , Yi-Che Chen
IPC分类号： H04N5/378 , G01J1/46 , H04N5/365 , H04N17/00 , H04N5/3745
CPC分类号： H04N5/378 , G01J1/46 , H04N5/3658 , H04N5/37457 , H04N17/002
摘要： A readout device comprises a readout circuit having a first switch configured to receive a pixel reset signal, a second switch configured to receive a pixel output signal, and a third switch configured to connect the first switch to the second switch. A first capacitor is connected to the first switch, a second capacitor is connected the second switch, a fourth switch is connected to the first capacitor, and a fifth switch is connected to the second capacitor. The fifth switch is connected to the fourth switch. The readout circuit also comprises a sixth switch connected to the first capacitor and a seventh switch connected to the second capacitor. The sixth switch is configured to provide a first output of the readout circuit, and the seventh is configured to provide a second output of the readout circuit.
摘要翻译：读出装置包括读出电路，其具有被配置为接收像素复位信号的第一开关，被配置为接收像素输出信号的第二开关和被配置为将第一开关连接到第二开关的第三开关。第一电容器连接到第一开关，第二电容器连接到第二开关，第四开关连接到第一电容器，第五开关连接到第二电容器。第五开关连接到第四开关。读出电路还包括连接到第一电容器的第六开关和连接到第二电容器的第七开关。第六开关被配置为提供读出电路的第一输出，并且第七开关被配置为提供读出电路的第二输出。

7. 发明授权

US11075267B2 Semiconductor device with low random telegraph signal noise 有权
公开(公告)号：US11075267B2
公开(公告)日：2021-07-27
申请号：US16716299
申请日：2019-12-16
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
发明人： Kuo-Yu Chou , Seiji Takahashi , Shang-Fu Yeh , Chih-Lin Lee , Chin Yin , Calvin Yi-Ping Chao
IPC分类号： H01L29/06 , H01L29/78 , H01L29/10 , H01L29/08 , H01L21/762 , H01L21/308
摘要： A semiconductor device comprises a source/drain diffusion area, and a first doped region. The source/drain diffusion area is defined between a first isolation structure and a second isolation structure. The source/drain diffusion area includes a source region, a drain region, and a device channel. The device channel is between the source region and the drain region. The first doped region is disposed along a first junction between the device channel and the first isolation structure in a direction from the source region to the drain region. The first doped region is separated from at least one of the source region and the drain region, and has a dopant concentration higher than that of the device channel. The semiconductor device of the present disclosure has low random telegraph signal noise and fewer defects.

8. 发明申请

US20160086996A1 Dual-Side Illumination Image Sensor Chips and Methods for Forming the Same 审中-公开
标题翻译：双面照明图像传感器芯片及其形成方法
公开(公告)号：US20160086996A1
公开(公告)日：2016-03-24
申请号：US14954579
申请日：2015-11-30
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chih-Min Liu , Honyih Tu , Calvin Yi-Ping Chao , Fu-Lung Hsueh
IPC分类号： H01L27/146 , H04N5/378
CPC分类号： H01L27/14634 , H01L27/14618 , H01L27/14636 , H01L27/1464 , H01L27/1469 , H01L31/18 , H01L2224/48091 , H01L2224/73265 , H04N5/378 , H01L2924/00014
摘要： A Dual-Side Illumination (DSI) image sensor chip includes a first image sensor chip configured to sense light from a first direction, and a second image sensor chip aligned to, and bonded to, the first image sensor chip. The second image sensor chip is configured to sense light from a second direction opposite the first direction.
摘要翻译：双面照明（DSI）图像传感器芯片包括被配置为感测来自第一方向的光的第一图像传感器芯片和与第一图像传感器芯片对准并与其结合的第二图像传感器芯片。第二图像传感器芯片被配置为感测来自与第一方向相反的第二方向的光。

9. 发明授权

US09013610B2 Apparatus with calibrated readout circuit 有权
标题翻译：带校准读出电路的装置
公开(公告)号：US09013610B2
公开(公告)日：2015-04-21
申请号：US14457521
申请日：2014-08-12
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Po-Sheng Chou , Calvin Yi-Ping Chao , Kuo-Yu Chou , Honyih Tu , Yi-Che Chen
IPC分类号： H04N5/217 , H04N3/14 , H04N5/335 , H03M1/00 , H04N5/378 , G01J1/46 , H04N5/365 , H04N17/00 , H04N5/3745
CPC分类号： H04N5/378 , G01J1/46 , H04N5/3658 , H04N5/37457 , H04N17/002
摘要： An apparatus comprises a readout circuit configured to be disconnected from a pixel output, and to connect a pixel reset signal received by the readout circuit to a pixel output signal received by the readout circuit. The apparatus also comprises at least one programmable gain amplifier coupled with the readout circuit. The apparatus further comprises an analog-to-digital converter coupled with the programmable gain amplifier. The readout circuit is configured to be calibrated based on a comparison of a measured output of the readout circuit to a predetermined value, the predetermined value being equal to (2n/2)−1, where n is the number of bits of the analog-to-digital converter.
摘要翻译：一种装置，包括：读出电路，被配置为与像素输出断开，并将由读出电路接收的像素复位信号连接到由读出电路接收的像素输出信号。该装置还包括与读出电路耦合的至少一个可编程增益放大器。该装置还包括与可编程增益放大器耦合的模数转换器。读出电路被配置为基于读出电路的测量输出与预定值的比较来校准，该预定值等于（2n / 2）-1，其中n是模拟量电路的位数，数字转换器。

10. 发明申请

US20220337206A1 DIFFERENTIAL AMPLIFIER 有权
公开(公告)号：US20220337206A1
公开(公告)日：2022-10-20
申请号：US17853913
申请日：2022-06-29
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chin-Hao Chang , Manoj M. Mhala , Calvin Yi-Ping Chao
IPC分类号： H03F3/45
摘要： A differential amplifier is provided. The differential amplifier includes a first load, a second load, a current source, a differential pair circuit, a first and a second switch circuit. The differential pair circuit includes a first transistor, a second transistor, a third transistor, and a fourth transistor. The first switch circuit controls the first and the second transistors, and the second switch circuit controls the third and the fourth transistors. Through the control and selection of the first and second switch circuits, a differential pair is selected in the differential pair circuit to receive and process a first input signal and a second input signal for signal.

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