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    • 7. 发明申请
    • BANDGAP VOLTAGE GENERATION
    • 带状电压发生器
    • US20160274616A1
    • 2016-09-22
    • US14664803
    • 2015-03-20
    • TEXAS INSTRUMENTS INCORPORATED
    • Subrato Roy
    • G05F3/26
    • G05F3/267
    • A bandgap reference voltage generator includes a first and a second bipolar junction transistor, which is biased at a lower current per unit emitter area than that of the first transistor. Accordingly, the base to emitter voltage of first transistor is higher than that of the second transistor and a delta VBE is generated at the base of the first transistor with respect to the base of the second transistor. A first voltage divider generates a divided voltage of a VBE (fractional VBE) at a first center node. The fractional VBE is added to the VBE of the first transistor and subtracted from the VBE of the second transistor by closed loop feedback action to generate a temperature compensated reference voltage at the base of second transistor. The reference voltage can be amplified to higher voltage levels by using a resistor divider at the base of second transistor.
    • 带隙参考电压发生器包括第一和第二双极结型晶体管,其以比第一晶体管的每单位发射极面积更低的电流偏置。 因此,第一晶体管的基极对发射极电压高于第二晶体管的基极至发射极电压,并且在第一晶体管的基极处相对于第二晶体管的基极产生增量VBE。 第一分压器在第一中心节点处产生VBE(分数VBE)的分压。 将分数VBE加到第一晶体管的VBE中,并通过闭环反馈作用从第二晶体管的VBE减去,以在第二晶体管的基极处产生温度补偿参考电压。 通过在第二晶体管的基极使用电阻分压器,可将参考电压放大到更高的电压电平。