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1. 发明授权

US10164174B2 Magnetoresistance effect element and magnetic memory 有权
公开(公告)号：US10164174B2
公开(公告)日：2018-12-25
申请号：US15872922
申请日：2018-01-16
申请人： TOHOKU UNIVERSITY
发明人： Hideo Sato , Shoji Ikeda , Mathias Bersweiler , Hiroaki Honjo , Kyota Watanabe , Shunsuke Fukami , Fumihiro Matsukura , Kenchi Ito , Masaaki Niwa , Tetsuo Endoh , Hideo Ohno
IPC分类号： H01L43/08 , H01F10/16 , H01F10/32 , H01L27/105 , H01L29/82 , G11C11/16 , H01L27/22 , H01L43/10
摘要： A magnetoresistance effect element includes first and second magnetic layers having a perpendicular magnetization direction, and a first non-magnetic layer disposed adjacent to the first magnetic layer and on a side opposite to a side on which the second magnetic layer is disposed. An interfacial perpendicular magnetic anisotropy exists at an interface between the first magnetic layer and the first non-magnetic layer, and the anisotropy causes the first magnetic layer to have a magnetization direction perpendicular to the surface if the layers. The second magnetic layer has a saturation magnetization lower than that of the first magnetic layer, and an interfacial magnetic anisotropy energy density (Ki) at the interface between the first magnetic layer and the first non-magnetic layer is greater than that of an interface between the first non-magnetic layer and second magnetic layers if being disposed adjacent each other.

2. 发明授权

US11563169B2 Magnetic tunnel junction element and magnetic memory 有权
公开(公告)号：US11563169B2
公开(公告)日：2023-01-24
申请号：US15776902
申请日：2016-11-18
申请人： TOHOKU UNIVERSITY
发明人： Hideo Sato , Yoshihisa Horikawa , Shunsuke Fukami , Shoji Ikeda , Fumihiro Matsukura , Hideo Ohno , Tetsuo Endoh , Hiroaki Honjo
IPC分类号： H01L43/08 , H01L43/10 , G11C11/16 , H01L43/02
摘要： A magnetic tunnel junction element (10) includes a configuration in which a reference layer (14) that includes a ferromagnetic material, a barrier layer (15) that includes O, a recording layer (16) that includes a ferromagnetic material including Co or Fe, a first protective layer (17) that includes O, and a second protective layer (18) that includes at least one of Pt, Ru, Co, Fe, CoB, FeB, or CoFeB are layered.

3. 发明授权

US10658572B2 Magnetoresistance effect element and magnetic memory 有权
公开(公告)号：US10658572B2
公开(公告)日：2020-05-19
申请号：US16179461
申请日：2018-11-02
申请人： TOHOKU UNIVERSITY
发明人： Hideo Sato , Shoji Ikeda , Mathias Bersweiler , Hiroaki Honjo , Kyota Watanabe , Shunsuke Fukami , Fumihiro Matsukura , Kenchi Ito , Masaaki Niwa , Tetsuo Endoh , Hideo Ohno
IPC分类号： H01L43/08 , H01L27/22 , H01F10/16 , H01F10/32 , H01L27/105 , H01L29/82 , G11C11/16 , H01L43/10
摘要： A magnetoresistance effect element includes first and second magnetic layers having a perpendicular magnetization direction, and a first non-magnetic layer disposed adjacent to the first magnetic layer and on a side opposite to a side on which the second magnetic layer is disposed. An interfacial perpendicular magnetic anisotropy exists at an interface between the first magnetic layer and the first non-magnetic layer, and the anisotropy causes the first magnetic layer to have a magnetization direction perpendicular to the surface of the layers. An atomic fraction of all magnetic elements to all magnetic and non-magnetic elements included in the second magnetic layer is smaller than that of the first magnetic layer.

4. 发明授权

US09577182B2 Magnetoresistance effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁存储器
公开(公告)号：US09577182B2
公开(公告)日：2017-02-21
申请号：US15029860
申请日：2014-10-20
申请人： TOHOKU UNIVERSITY
发明人： Shoji Ikeda , Hideo Sato , Shunsuke Fukami , Michihiko Yamanouchi , Fumihiro Matsukura , Hideo Ohno , Shinya Ishikawa
IPC分类号： H01L43/08 , G11C11/16 , H01L43/02 , H01L27/22
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228 , H01L43/02
摘要： A magnetoresistance effect element and a magnetic memory having thermal stability expressed by a thermal stability factor of 70 or more even with a fine junction size. The magnetoresistance effect element includes a first magnetic layer of an invariable magnetization direction forming a reference layer, a second magnetic layer of a variable magnetization direction forming a recording layer, and a first non-magnetic layer disposed between the first and second magnetic layers in a thickness direction of the first and second magnetic layers. At least one of the first and second magnetic layers has the following relationship between D (nm) and t (nm): D
摘要翻译：具有热稳定性的磁阻效应元件和磁性存储器，即使是具有良好的接合尺寸，热稳定性为70以上的热稳定性。磁阻效应元件包括形成参考层的不变磁化方向的第一磁性层，形成记录层的可变磁化方向的第二磁性层和设置在第一和第二磁性层之间的第一非磁性层，第一和第二磁性层的厚度方向。第一和第二磁性层中的至少一个在D（nm）和t（nm）之间具有以下关系：D <0.9t + 13，其中D是对应于端部上最长直线的长度的结尺寸垂直于厚度方向的表面，t是层厚度。结大小为30nm以下。

5. 发明授权

US10651369B2 Magnetoresistive element and magnetic memory 有权
公开(公告)号：US10651369B2
公开(公告)日：2020-05-12
申请号：US15392556
申请日：2016-12-28
申请人： TOHOKU UNIVERSITY
发明人： Hideo Ohno , Shoji Ikeda , Fumihiro Matsukura , Masaki Endoh , Shun Kanai , Hiroyuki Yamamoto , Katsuya Miura
IPC分类号： H01L43/08 , G01R33/09 , G11C11/16 , G11B5/31 , H01L27/22 , H01L43/12 , H01L43/02 , H01L43/10
摘要： Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.

6. 发明授权

US09564152B2 Magnetoresistance effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁存储器
公开(公告)号：US09564152B2
公开(公告)日：2017-02-07
申请号：US14224853
申请日：2014-03-25
申请人： Tohoku University
发明人： Hideo Ohno , Shoji Ikeda , Fumihiro Matsukura , Masaki Endoh , Shun Kanai , Hiroyuki Yamamoto , Katsuya Miura
IPC分类号： G11C11/16 , H01L43/08 , G11B5/31 , G01R33/09 , H01L43/02 , H01L43/12 , H01L27/22
CPC分类号： H01L43/08 , G01R33/098 , G11B5/31 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/02 , H01L43/10 , H01L43/12 , Y10T428/1114
摘要： Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers 106 and 107 of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.
摘要翻译：提供了具有垂直于膜平面和受控磁阻比的稳定磁化方向的磁阻效应元件，以及使用该磁阻效应元件的磁存储器。磁阻效应元件的铁磁层106和107由含有至少一种类型的3d过渡金属的铁磁材料形成，使得磁阻比被控制，并且铁磁层的膜厚被控制在诸如磁化方向从薄膜平面的方向向垂直于薄膜平面的方向变化。

7. 发明申请

US20140205862A1 Magnetoresistance Effect Element and Magnetic Memory 有权
标题翻译：磁阻效应元件和磁记忆
公开(公告)号：US20140205862A1
公开(公告)日：2014-07-24
申请号：US14224853
申请日：2014-03-25
申请人： Tohoku University
发明人： Hideo Ohno , Shoji Ikeda , Fumihiro Matsukura , Masaki Endoh , Shun Kanai , Hiroyuki Yamamoto , Katsuya Miura
IPC分类号： G11B5/31
CPC分类号： H01L43/08 , G01R33/098 , G11B5/31 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/02 , H01L43/10 , H01L43/12 , Y10T428/1114
摘要： Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers 106 and 107 of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.
摘要翻译：提供了具有垂直于膜平面和受控磁阻比的稳定磁化方向的磁阻效应元件，以及使用该磁阻效应元件的磁存储器。磁阻效应元件的铁磁层106和107由含有至少一种类型的3d过渡金属的铁磁材料形成，使得磁阻比被控制，并且铁磁层的膜厚被控制在诸如磁化方向从薄膜平面的方向向垂直于薄膜平面的方向变化。

8. 发明授权

US10804457B2 Magnetoresistive element and magnetic memory 有权
公开(公告)号：US10804457B2
公开(公告)日：2020-10-13
申请号：US15252128
申请日：2016-08-30
申请人： TOHOKU UNIVERSITY
发明人： Hideo Ohno , Shoji Ikeda , Fumihiro Matsukura , Masaki Endoh , Shun Kanai , Katsuya Miura , Hiroyuki Yamamoto
IPC分类号： G11C11/16 , H01L43/08 , H01L43/10 , H01L27/22 , H01L43/12
摘要： A magnetoresistive element includes a reference layer having a fixed magnetization direction and including a ferromagnetic material containing Fe or Co, a recording layer having a variable magnetization direction and including a ferromagnetic material, and one non-magnetic layer that is formed between the reference layer and the recording layer and that contains oxygen. One of the reference layer and the recording layer contains Fe. The three layers are arranged so that a magnetization direction of the one of the reference layer and the recording layer becomes perpendicular to a layer surface by an interfacial perpendicular magnetic anisotropy at an interface between the one of the reference layer and the recording layer and the one non-magnetic layer resulting from the one of the reference layer and the recording layer having a predetermined thickness. The one of the reference layer and the recording layer has a bcc structure.

9. 发明授权

US10263180B2 Magnetoresistance effect element and magnetic memory 有权
公开(公告)号：US10263180B2
公开(公告)日：2019-04-16
申请号：US15657148
申请日：2017-07-22
申请人： TOHOKU UNIVERSITY
发明人： Hideo Sato , Shinya Ishikawa , Shunsuke Fukami , Shoji Ikeda , Fumihiro Matsukura , Hideo Ohno , Tetsuo Endoh
IPC分类号： H01L43/08 , H01L27/105 , H01L29/82 , G11C11/16 , H01L27/22 , H01L43/02
摘要： A magnetoresistance effect element includes a reference layer made of a ferromagnetic material, a recording layer made of a ferromagnetic material, and a barrier layer disposed between the reference layer and the recording layer. The reference layer and the recording layer have an in-plane magnetization direction parallel to a surface of the layers. The recording layer has a shape that has short axis and long axis perpendicular to the short axis in plan view. A first value obtained by dividing a thickness of the recording layer by a length of the short axis of the recording layer is greater than 0.3 and smaller than 1.

10. 发明授权

US09202545B2 Magnetoresistance effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁存储器
公开(公告)号：US09202545B2
公开(公告)日：2015-12-01
申请号：US14390324
申请日：2013-03-25
申请人： TOHOKU UNIVERSITY
发明人： Hideo Sato , Shunsuke Fukami , Michihiko Yamanouchi , Shoji Ikeda , Fumihiro Matsukura , Hideo Ohno
IPC分类号： G11C11/16 , H01F10/32 , H01L43/08 , H01L27/22
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1653 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08
摘要： A magnetoresistance effect element including a recording layer of high thermal stability to perform perpendicular magnetic recording within a film surface, and a magnetic memory using the element. The element includes: a first ferromagnetic layer of an invariable magnetization direction; a second ferromagnetic layer of a variable magnetization direction; a first non-magnetic layer between the first and second ferromagnetic layers; current supply terminals connected to the first and second ferromagnetic layers; a non-magnetic coupling layer on a surface of the second ferromagnetic layer opposite the first non-magnetic layer; a third ferromagnetic layer of a variable magnetization direction on a surface of the non-magnetic coupling layer opposite the second ferromagnetic layer; and a second non-magnetic layer on a surface of the third ferromagnetic layer opposite the non-magnetic coupling layer. The second and third ferromagnetic layers have the same magnetization direction and are reversed in magnetization by spin injection with a current.
摘要翻译：包括具有高热稳定性的记录层以在膜表面内进行垂直磁记录的磁阻效应元件和使用该元件的磁存储器。该元件包括：不变磁化方向的第一铁磁层; 可变磁化方向的第二铁磁层; 第一和第二铁磁层之间的第一非磁性层; 连接到第一和第二铁磁层的电流源端子; 在所述第二铁磁层的与所述第一非磁性层相对的表面上的非磁性耦合层; 在与第二铁磁层相对的非磁性耦合层的表面上的可变磁化方向的第三铁磁层; 以及在与非磁耦合层相对的第三铁磁层的表面上的第二非磁性层。第二和第三铁磁层具有相同的磁化方向，并且通过用电流的自旋注入在磁化中反转。

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