专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10294565B2 Substrate processing apparatus 有权
公开(公告)号：US10294565B2
公开(公告)日：2019-05-21
申请号：US15296588
申请日：2016-10-18
申请人： TOKYO ELECTRON LIMITED
发明人： Kiichi Takahashi , Yuya Sasaki , Kosuke Takahashi
IPC分类号： C23C16/455
摘要： A substrate processing apparatus includes a first hole portion formed through a sidewall of the process chamber and horizontally extending outward and a second hole portion formed to be contiguous with the first hole portion and defining a supply channel for a process gas. The apparatus also includes a gas nozzle, a plurality of seal members and an annular spacer. A proximal end of the gas nozzle is inserted into the first hole portion. The plurality of seal members is spaced apart from each other between an outer circumferential surface of the gas nozzle and the first hole portion. The annular spacer is inserted into the first hole portion and is pressed against an annular surface of an opening periphery of the second hole portion by the gas nozzle in a state where the proximal end of the gas nozzle is engaged with the annular spacer.

2. 发明授权

US08895456B2 Method of depositing a film 有权
标题翻译：沉积薄膜的方法
公开(公告)号：US08895456B2
公开(公告)日：2014-11-25
申请号：US14132050
申请日：2013-12-18
申请人： Tokyo Electron Limited
发明人： Mitsuhiro Tachibana , Hiroaki Ikegawa , Yu Wamura , Muneyuki Otani , Jun Ogawa , Kosuke Takahashi
IPC分类号： H01L21/31 , H01L21/469 , H01L21/02 , H01L21/687 , C23C16/30 , C23C16/40 , C23C16/455
CPC分类号： H01L21/0228 , C23C16/308 , C23C16/401 , C23C16/405 , C23C16/45529 , C23C16/45531 , C23C16/45551 , H01L21/02148 , H01L21/02164 , H01L21/02181 , H01L21/022 , H01L21/68764 , H01L21/68771
摘要： A method of depositing a film of forming a doped oxide film including a first oxide film containing a first element and doped with a second element on substrates mounted on a turntable including depositing the first oxide film onto the substrates by rotating the turntable predetermined turns while a first reaction gas containing the first element is supplied from a first gas supplying portion, an oxidation gas is supplied from a second gas supplying portion, and a separation gas is supplied from a separation gas supplying portion, and doping the first oxide film with the second element by rotating the turntable predetermined turns while a second reaction gas containing the second element is supplied from one of the first and second gas supplying portions, an inert gas is supplied from another one, and the separation gas is supplied from the separation gas supplying portion.
摘要翻译：一种沉积形成掺杂氧化物膜的膜的方法，该膜包括含有第一元素的第一氧化物膜，并且在安装在转台上的基板上掺杂有第二元素，所述基板包括通过旋转转盘预定匝而将第一氧化物膜沉积到基板上，同时从第一气体供给部供给含有第一元素的第一反应气体，从第二气体供给部供给氧化气体，从分离气体供给部供给分离气体，并将第二氧化物膜与第二气体从第一和第二气体供给部中的一个供给含有第二元素的第二反应气体，从另一个供给惰性气体，从分离气体供给部供给分离气体，。

3. 发明申请

US20140179122A1 METHOD OF DEPOSITING A FILM 有权
标题翻译：沉积膜的方法
公开(公告)号：US20140179122A1
公开(公告)日：2014-06-26
申请号：US14132050
申请日：2013-12-18
申请人： Tokyo Electron Limited
发明人： Mitsuhiro Tachibana , Hiroaki Ikegawa , Yu Wamura , Muneyuki Otani , Jun Ogawa , Kosuke Takahashi
IPC分类号： H01L21/02 , H01L21/687
CPC分类号： H01L21/0228 , C23C16/308 , C23C16/401 , C23C16/405 , C23C16/45529 , C23C16/45531 , C23C16/45551 , H01L21/02148 , H01L21/02164 , H01L21/02181 , H01L21/022 , H01L21/68764 , H01L21/68771
摘要： A method of depositing a film of forming a doped oxide film including a first oxide film containing a first element and doped with a second element on substrates mounted on a turntable including depositing the first oxide film onto the substrates by rotating the turntable predetermined turns while a first reaction gas containing the first element is supplied from a first gas supplying portion, an oxidation gas is supplied from a second gas supplying portion, and a separation gas is supplied from a separation gas supplying portion, and doping the first oxide film with the second element by rotating the turntable predetermined turns while a second reaction gas containing the second element is supplied from one of the first and second gas supplying portions, an inert gas is supplied from another one, and the separation gas is supplied from the separation gas supplying portion.
摘要翻译：一种沉积形成掺杂氧化物膜的膜的方法，该膜包括含有第一元素的第一氧化物膜，并且在安装在转台上的基板上掺杂有第二元素，所述基板包括通过旋转转盘预定匝而将第一氧化物膜沉积到基板上，同时从第一气体供给部供给含有第一元素的第一反应气体，从第二气体供给部供给氧化气体，从分离气体供给部供给分离气体，并将第二氧化物膜与第二气体从第一和第二气体供给部中的一个供给含有第二元素的第二反应气体，从另一个供给惰性气体，从分离气体供给部供给分离气体，。

4. 发明申请

US20140147591A1 FILM DEPOSITION METHOD, STORAGE MEDIUM, AND FILM DEPOSITION APPARATUS 有权
标题翻译：薄膜沉积方法，储存介质和薄膜沉积装置
公开(公告)号：US20140147591A1
公开(公告)日：2014-05-29
申请号：US14088727
申请日：2013-11-25
申请人： Tokyo Electron Limited
发明人： Hiroaki IKEGAWA , Masahiko Kaminishi , Kosuke Takahashi , Yu Sasaki , Jun Ogawa
IPC分类号： C23C16/52
CPC分类号： C23C16/52 , C23C16/40 , C23C16/45531 , C23C16/45551
摘要： A film deposition method includes rotating a rotary table by a first angle while supplying a separation gas from a separation gas supplying part and a first reaction gas from a first gas supplying part; supplying a second reaction gas from a second gas supplying part and rotating the rotary table by a second angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; rotating the rotary table by a third angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; and supplying a third reaction gas from the second gas supplying part and rotating the rotary table by a fourth angle while supplying the separation gas and the first reaction gas.
摘要翻译：一种膜沉积方法包括：在从分离气体供应部分供应分离气体和从第一气体供应部分提供第一反应气体的同时旋转第一角度的旋转台; 从第二气体供给部供给第二反应气体，并在从分离气体供给部供给分离气体和从第一气体供给部供给第一反应气体的同时使旋转台旋转第二角度; 同时从第一气体供给部分供给来自分离气体供给部分和第一反应气体的分离气体，使旋转台旋转第三角度; 从第二气体供给部供给第三反应气体，并在供给分离气体和第一反应气体的同时旋转第四角度的旋转台。

5. 发明授权

US08980371B2 Film deposition method 有权
标题翻译：膜沉积法
公开(公告)号：US08980371B2
公开(公告)日：2015-03-17
申请号：US14088727
申请日：2013-11-25
申请人： Tokyo Electron Limited
发明人： Hiroaki Ikegawa , Masahiko Kaminishi , Kosuke Takahashi , Yu Sasaki , Jun Ogawa
IPC分类号： C23C16/44 , C23C16/52 , C23C16/458
CPC分类号： C23C16/52 , C23C16/40 , C23C16/45531 , C23C16/45551
摘要： A film deposition method includes rotating a rotary table by a first angle while supplying a separation gas from a separation gas supplying part and a first reaction gas from a first gas supplying part; supplying a second reaction gas from a second gas supplying part and rotating the rotary table by a second angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; rotating the rotary table by a third angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; and supplying a third reaction gas from the second gas supplying part and rotating the rotary table by a fourth angle while supplying the separation gas and the first reaction gas.
摘要翻译：一种膜沉积方法包括：在从分离气体供应部分供应分离气体和从第一气体供应部分提供第一反应气体的同时旋转第一角度的旋转台; 从第二气体供给部供给第二反应气体，并在从分离气体供给部供给分离气体和从第一气体供给部供给第一反应气体的同时使旋转台旋转第二角度; 同时从第一气体供给部分供给来自分离气体供给部分和第一反应气体的分离气体，使旋转台旋转第三角度; 从第二气体供给部供给第三反应气体，并在供给分离气体和第一反应气体的同时旋转第四角度的旋转台。

6. 发明授权

US10472719B2 Nozzle and substrate processing apparatus using same 有权
公开(公告)号：US10472719B2
公开(公告)日：2019-11-12
申请号：US14933123
申请日：2015-11-05
申请人： Tokyo Electron Limited
发明人： Yu Wamura , Fumiaki Hayase , Masahiko Kaminishi , Kosuke Takahashi , Hiroko Sasaki , Yu Sasaki
IPC分类号： C23C16/455 , H01J37/32 , B05B1/20
摘要： A nozzle for supplying a fluid includes a tubular part including a tubular passage thereinside and a fluid discharge surface having a plurality of fluid discharge holes formed therein along a lengthwise direction of the tubular passage. A partition plate is provided in the tubular passage and extends along the lengthwise direction so as to partition the tubular passage into a first area including the fluid discharge surface and a second area without the fluid discharge surface. The partition plate has distribution holes whose number is less than a number of the plurality of fluid discharge holes in the lengthwise direction. A fluid introduction passage is in communication with the second area.

7. 发明申请

US20200165720A1 MONITORING APPARATUS OF RAW MATERIAL TANK AND MONITORING METHOD OF RAW MATERIAL TANK 审中-公开
公开(公告)号：US20200165720A1
公开(公告)日：2020-05-28
申请号：US16695411
申请日：2019-11-26
申请人： Tokyo Electron Limited
发明人： Kenta Horigome , Shinobu Kawamorita , Yosuke Matsumoto , Kosuke Takahashi , Naohide Ito
IPC分类号： C23C14/54 , G05B15/02 , G05D23/19
摘要： A monitoring apparatus for monitoring a raw material tank monitors the temperature of the raw material tank when the temperature of the raw material tank storing a solid or liquid raw material is raised to a set temperature by a heating unit. The monitoring apparatus includes: a temperature determination unit configured to determine whether the temperature has reached a stable range including the set temperature, and determine whether the temperature has deviated from the stable range; and a setting unit configured to set the set temperature of the heating unit to 0° C. when a predetermined timeout time has elapsed from a time point at which the temperature determination unit determined that the temperature deviated from the stable range.

8. 发明申请

US20160220953A1 METHOD OF DETOXIFYING EXHAUST PIPE AND FILM FORMING APPARATUS 审中-公开
标题翻译：去除排气管和膜成型装置的方法
公开(公告)号：US20160220953A1
公开(公告)日：2016-08-04
申请号：US15003138
申请日：2016-01-21
申请人： TOKYO ELECTRON LIMITED
发明人： Yu Wamura , Fumiaki Hayase , Masahiko Kaminishi , Kosuke Takahashi , Yu Sasaki , Hiroko Sasaki
IPC分类号： B01D53/76 , C23C16/458 , C23C16/455 , C23C16/52 , B01D53/54 , C23C16/44
CPC分类号： C23C16/4584 , B01D53/54 , B01D53/72 , B01D53/76 , B01D2251/104 , B01D2258/0216 , C23C16/4412 , C23C16/45551
摘要： A method of detoxifying an exhaust pipe in a film forming apparatus configured to supply a raw material gas contending a harmful component and a reaction gas capable of generating a harmless reaction product by reaction with the raw material gas into a process chamber to perform a film forming process on a substrate while independently exhausting the raw material gas and the reaction gas from a raw material exhaust pipe and a reaction gas exhaust pipe connected to the process chamber, respectively, is provided. The method includes supplying the reaction gas into the raw material exhaust pipe to detoxify an interior of the raw material exhaust pipe during a predetermined period in which the film forming apparatus is operated and the film forming process is not performed.
摘要翻译：一种成膜装置的排气管的方法，该成膜装置被配置为将与原料气体反应产生无害反应产物的能够产生有害成分的原料气体的反应气体供给到处理室，从而进行成膜提供了分别从连接到处理室的原料排气管和反应气体排出管独立地排出原料气体和反应气体的基板上的工序。该方法包括将原料排气管中的反应气体供给到原料排气管的内部，在成膜装置运转的规定期间内不进行成膜处理。

9. 发明授权

US09293543B2 Film forming method and film forming apparatus 有权
标题翻译：成膜方法和成膜装置
公开(公告)号：US09293543B2
公开(公告)日：2016-03-22
申请号：US14044119
申请日：2013-10-02
申请人： TOKYO ELECTRON LIMITED , OSAKA UNIVERSITY
发明人： Shuji Azumo , Yusaku Kashiwagi , Yuichiro Morozumi , Yu Wamura , Katsushige Harada , Kosuke Takahashi , Heiji Watanabe , Takayoshi Shimura , Takuji Hosoi
IPC分类号： H01L21/283 , H01L21/441 , H01L29/51 , H01L29/40 , H01L21/04 , H01L21/28 , H01L21/02 , C23C16/30 , H01L29/66 , H01L29/78 , H01L29/16 , H01L29/20
CPC分类号： H01L29/401 , C23C16/303 , C23C16/308 , H01L21/02178 , H01L21/022 , H01L21/02252 , H01L21/02271 , H01L21/0228 , H01L21/02326 , H01L21/02332 , H01L21/044 , H01L21/049 , H01L21/28264 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66045 , H01L29/66068 , H01L29/66712 , H01L29/66734 , H01L29/7802 , H01L29/7813
摘要： Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.
摘要翻译：提供一种形成用于功率器件的MOSFET的栅极绝缘膜的方法。在晶片W的SiC衬底上形成AlN膜，然后重复形成AlO膜并在AlO膜上形成AlN膜，从而形成具有层叠结构的AlON膜，其中AlO膜和 AlN膜交替层压。对具有层叠结构的AlON膜进行热处理。

10. 发明授权

US11073851B2 Monitoring apparatus of raw material tank and monitoring method of raw material tank 有权
公开(公告)号：US11073851B2
公开(公告)日：2021-07-27
申请号：US16695411
申请日：2019-11-26
申请人： Tokyo Electron Limited
发明人： Kenta Horigome , Shinobu Kawamorita , Yosuke Matsumoto , Kosuke Takahashi , Naohide Ito
IPC分类号： G05D23/19 , C23C14/54 , G05B15/02 , C23C16/44 , F24F110/10 , B01F15/06
摘要： A monitoring apparatus for monitoring a raw material tank monitors the temperature of the raw material tank when the temperature of the raw material tank storing a solid or liquid raw material is raised to a set temperature by a heating unit. The monitoring apparatus includes: a temperature determination unit configured to determine whether the temperature has reached a stable range including the set temperature, and determine whether the temperature has deviated from the stable range; and a setting unit configured to set the set temperature of the heating unit to 0° C. when a predetermined timeout time has elapsed from a time point at which the temperature determination unit determined that the temperature deviated from the stable range.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式