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1. 发明授权

US11441101B2 Cleaning composition, cleaning method, and method for manufacturing semiconductor 有权
公开(公告)号：US11441101B2
公开(公告)日：2022-09-13
申请号：US16336658
申请日：2017-09-22
申请人： TOKYO OHKA KOGYO CO., LTD. , TOKYO ELECTRON LIMITED
发明人： Isao Hirano , Kazumasa Wakiya , Shoichi Terada , Junji Nakamura , Takayuki Toshima
IPC分类号： C11D3/37 , C11D1/62 , C11D1/12 , C11D11/00 , G03F7/039 , G03F7/11 , G03F7/42
摘要： A cleaning composition which can remove a layer of interest using a conventional apparatus, such as a coater, a baking furnace and a cleaning chamber, installed in semiconductor manufacturing equipment while preventing the damage or deformation of layers other than the layer of interest, such as a substrate and an interlayer insulation film; a cleaning method using the cleaning composition; and a method for producing a semiconductor employing the cleaning method. A layer of interest formed on a substrate is cleaned with a cleaning composition containing a component capable of decomposing the layer of interest and a film-forming polymer. An example of the layer of interest is a hard mask film. An example of the component is at least one of a basic compound and an acidic compound.

2. 发明授权

US11355362B2 Washing method, washing device, storage medium, and washing composition 有权
公开(公告)号：US11355362B2
公开(公告)日：2022-06-07
申请号：US16606660
申请日：2018-02-02
申请人： TOKYO OHKA KOGYO CO., LTD. , TOKYO ELECTRON LIMITED
发明人： Isao Hirano , Shoichi Terada , Junji Nakamura , Takayuki Toshima
IPC分类号： H01L21/02 , H01L21/027 , H01L21/304 , H01L21/3065 , H01L21/308 , H01L21/324 , H01L21/67 , C11D7/08 , C11D7/34 , G03F7/42
摘要： A washing method, a washing device, a storage medium, and a washing composition for enabling effective removal of a layer to be processed by decomposing or degenerating the layer to be processed at a higher temperature than conventionally. In a state where a substrate provided with a layer to be processed is heated, the substrate is supplied with vapor of a component that can decompose the layer to be processed, and thereafter the layer to be processed that has reacted with the component is removed from the substrate. As the component, a nitric acid or a sulfonic acid is preferable. As the sulfonic acid, a fluorinated alkyl sulfonic acid is preferable.

3. 发明授权

US10347482B2 Substrate processing apparatus, substrate processing method, and storage medium with program stored therein for executing substrate processing method 有权
公开(公告)号：US10347482B2
公开(公告)日：2019-07-09
申请号：US15661157
申请日：2017-07-27
申请人： Tokyo Electron Limited
发明人： Takayuki Toshima , Shoichi Terada , Junji Nakamura
IPC分类号： B08B3/10 , H01L21/02 , B08B3/08 , H01L21/67 , H01L21/311 , H01L21/3213
摘要： The present disclosure relates to a processing liquid supplying unit configured to supply a processing liquid that contains a removing agent of an adhered substance and a solvent having a boiling point lower than a boiling point of the removing agent to a substrate, a substrate heating unit configured to subsequently heat the substrate at a predetermined temperature that is equal to or higher than the boiling point of the solvent in the processing liquid and is lower than the boiling point of the removing agent, and a rinsing liquid supplying unit configured to subsequently supply a rinsing liquid to the substrate so as to remove the adhered substance from the substrate.

4. 发明申请

US20150258465A1 SEPARATION AND REGENERATION APPARATUS AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：分离和再生装置和基板加工装置
公开(公告)号：US20150258465A1
公开(公告)日：2015-09-17
申请号：US14644458
申请日：2015-03-11
申请人： Tokyo Electron Limited
发明人： Kazuyuki Mitsuoka , Hiroki Ohno , Takehiko Orii , Takayuki Toshima
IPC分类号： B01D3/02 , H01L21/67
CPC分类号： H01L21/67017 , H01L21/02057 , H01L21/02101
摘要： Disclosed is a separation and regeneration apparatus including: a supercritical processing unit configured to generate a mixed gas including a first fluorine-containing organic solvent having a first boiling point and a second fluorine-containing organic solvent having a second boiling point lower than the first boiling point; and a distillation tank configured to store hot water having a temperature between the first boiling point and the second boiling point, in which the mixed gas is input into the hot water to be separated into the first fluorine-containing organic solvent in a liquid state and the second fluorine-containing organic solvent in a gas state, in which an introduction line configured to guide the mixed gas from the supercritical processing unit to the distillation tank is provided and a distal end of the introduction line is disposed in the hot water.
摘要翻译：公开了一种分离再生装置，其特征在于，包括：超临界处理装置，其构成为，生成包含第一沸点的第一含氟有机溶剂和第二含氟有机溶剂的混合气体，所述第二含氟有机溶剂的第二沸点低于第一沸点点; 以及蒸馏罐，其被配置为存储温度在第一沸点和第二沸点之间的温度，其中混合气体以液态输入到要分离成热的第一含氟有机溶剂的热水中，在气体状态下设置第二含氟有机溶剂，其中将从超临界处理单元引导混合气体的引入管线设置到蒸馏罐，并且引入管线的远端设置在热水中。

5. 发明授权

US11551931B2 Substrate processing apparatus, substrate processing method, and storage medium storing program for executing substrate processing method 有权
公开(公告)号：US11551931B2
公开(公告)日：2023-01-10
申请号：US16769179
申请日：2018-12-07
申请人： TOKYO ELECTRON LIMITED
发明人： Koji Kagawa , Takayuki Toshima
IPC分类号： H01L21/033 , H01L21/02 , H01L21/3213 , H01L21/67
摘要： A substrate processing method includes (A) supplying to the substrate a first processing liquid containing a removing agent for deposit, a solvent having a boiling point lower than that of the removing agent and a thickener, (B), after (A), supplying to the substrate a second processing liquid containing an organic polymer to be a gas diffusion barrier film, (C), after (B), heating the substrate at a predetermined temperature equal to or higher than the boiling point of the solvent and lower than the boiling point of the removing agent to promote evaporation of the solvent and reaction between the deposit and the removing agent, and (D), after (C), supplying a rinsing liquid to the substrate to remove the deposit from the substrate. The gas diffusion barrier film prevents a gaseous reactive product generated by the reaction in (C) from diffusing around the substrate.

6. 发明授权

US09583330B2 Supercritical drying method for semiconductor substrate and supercritical drying apparatus 有权
标题翻译：半导体衬底超临界干燥方法及超临界干燥装置
公开(公告)号：US09583330B2
公开(公告)日：2017-02-28
申请号：US14283874
申请日：2014-05-21
申请人： Tokyo Electron Limited
发明人： Linan Ji , Hidekazu Hayashi , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Takayuki Toshima , Mitsuaki Iwashita , Kazuyuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
IPC分类号： F26B3/00 , H01L21/02 , F26B21/10 , F26B21/14 , F26B23/02 , H01L21/67
CPC分类号： H01L21/02 , F26B21/10 , F26B21/14 , F26B23/028 , F26B2200/04 , H01L21/02052 , H01L21/02057 , H01L21/02101 , H01L21/67034
摘要： A supercritical drying method for a semiconductor substrate is disclosed. The method may include introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method may also include performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.
摘要翻译：公开了一种用于半导体衬底的超临界干燥方法。该方法可以包括将半导体衬底以半导体衬底的醇湿润的状态引入半导体衬底，用二氧化碳的超临界流体代替半导体衬底上的醇，通过将半导体衬底浸渍到超临界流体中并且从室中排出超临界流体和醇，并减小室内的压力。该方法还可以包括在室内压力降低之后，向室内供给氧气或臭氧气体进行烘烤处理。

7. 发明申请

US20140311530A1 SUBSTRATE PROCESSING METHOD AND TEMPLATE 审中-公开
标题翻译：基板处理方法和模板
公开(公告)号：US20140311530A1
公开(公告)日：2014-10-23
申请号：US14358847
申请日：2012-10-22
申请人： TOKYO ELECTRON LIMITED
发明人： Haruo Iwatsu , Takayuki Toshima , Kazuo Sakamoto
IPC分类号： H01L21/768
CPC分类号： H01L21/76897 , C23C18/38 , C25D5/08 , C25D7/123 , C25D17/001 , C25D17/008 , H01L21/288 , H01L21/67144 , H01L21/76826 , H01L23/481 , H01L23/544 , H01L24/13 , H01L2223/54426 , H01L2223/5446 , H01L2224/1146 , H01L2224/13009 , H01L2224/13099 , H01L2224/94 , H01L2924/12042 , Y10T428/24273 , H01L2924/00014 , H01L2224/11 , H01L2924/00
摘要： A substrate processing method of performing a predetermined processing by supplying a processing liquid to a processing region on a surface of a substrate, includes: supplying an alignment liquid to an alignment region on the surface of the substrate formed at a position different from that of the processing region; aligning a template disposed facing the substrate and including a processing liquid passage configured to pass the processing liquid and an alignment liquid passage configured to pass the alignment liquid, with respect to the substrate with the alignment liquid supplied to the alignment region such that the processing liquid passage is positioned above the processing region; and performing the predetermined processing on the substrate by supplying the processing liquid to the processing region through the processing liquid passage.
摘要翻译：一种基板处理方法，其通过向基板的表面上的处理区域提供处理液体来进行预定处理，包括：将取向液体供给到形成在与所述基板的位置不同的位置的基板的表面上的取向区域加工区域对准与衬底相对设置的模板，并且包括被配置为使处理液通过的处理液通道和配置为使对准液体通过的取向液通道相对于基板被供给到取向区域的取向液体，使得处理液体通道位于加工区域上方; 并且通过将处理液体通过处理液通道供给到处理区域，对基板进行规定的处理。

8. 发明申请

US20190279861A1 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM WITH PROGRAM STORED THEREIN FOR EXECUTING SUBSTRATE PROCESSING METHOD 审中-公开
公开(公告)号：US20190279861A1
公开(公告)日：2019-09-12
申请号：US16420441
申请日：2019-05-23
申请人： Tokyo Electron Limited
发明人： Takayuki Toshima , Shoichi Terada , Junji Nakamura
IPC分类号： H01L21/02 , H01L21/67 , B08B3/10 , H01L21/311 , B08B3/08
摘要： The present disclosure relates to a processing liquid supplying unit configured to supply a processing liquid that contains a removing agent of an adhered substance and a solvent having a boiling point lower than a boiling point of the removing agent to a substrate, a substrate heating unit configured to subsequently heat the substrate at a predetermined temperature that is equal to or higher than the boiling point of the solvent in the processing liquid and is lower than the boiling point of the removing agent, and a rinsing liquid supplying unit configured to subsequently supply a rinsing liquid to the substrate so as to remove the adhered substance from the substrate.

9. 发明授权

US10046370B2 Substrate processing apparatus, substrate processing method, fluid supplying method and storage medium 有权
公开(公告)号：US10046370B2
公开(公告)日：2018-08-14
申请号：US15491058
申请日：2017-04-19
申请人： Tokyo Electron Limited
发明人： Gentaro Goshi , Kazuyuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii , Takayuki Toshima
IPC分类号： B08B3/10 , H01L21/67
摘要： The present disclosure provides a substrate processing apparatus including: a processing chamber configured to process a substrate; a fluid supply source configured to supply a substrate processing fluid used in processing for the substrate in a predetermined pressure; a constant pressure supplying path configured to supply the substrate processing fluid from the fluid supply source to the processing chamber in a predetermined pressure without boosting the pressure of the substrate processing liquid; a boosted pressure supplying path configured to boost the pressure of the substrate processing fluid from the fluid supply source into a predetermined pressure by a booster mechanism and supply the pressure boosted substrate processing fluid to the processing chamber; and a control unit configured to switch over the constant pressure supplying path and the boosted pressure supplying path.

10. 发明申请

US20150258584A1 SEPARATION AND REGENERATION APPARATUS AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：分离和再生装置和基板加工装置
公开(公告)号：US20150258584A1
公开(公告)日：2015-09-17
申请号：US14644319
申请日：2015-03-11
申请人： Tokyo Electron Limited
发明人： Kazuyuki Mitsuoka , Hiroki Ohno , Takehiko Orii , Takayuki Toshima
IPC分类号： B08B3/14 , H01L21/02 , H01L21/67 , B01D3/00
CPC分类号： H01L21/02101 , B01D3/00 , H01L21/02057 , H01L21/67017 , H01L21/67109
摘要： Disclosed is a separation and regeneration apparatus which includes a buffer tank configured to generate a mixed liquid which includes a first fluorine-containing organic solvent having a first boiling point, and a second fluorine-containing organic solvent having a second boiling point higher than the first boiling point; a distillation tank configured to heat the mixed liquid up to a temperature between the first boiling point and the second boiling point so as to separate the mixed liquid into the first fluorine-containing organic solvent in a gas state and the second fluorine-containing organic solvent in a liquid state; a first tank configured to liquefy and store the first fluorine-containing organic solvent in the gas state which is sent from the distillation tank; and a second tank configured to store the second fluorine-containing organic solvent in the liquid state which is sent from the distillation tank.
摘要翻译：本发明公开了一种分离再生装置，其特征在于，具备缓冲罐，其构成为产生含有第一沸点的第一含氟有机溶剂的混合液和第二沸点高于第一沸点的第二含氟有机溶剂沸点蒸馏槽，将混合液加热至第一沸点和第二沸点之间的温度，以将混合液体分解成气态的第一含氟有机溶剂，第二含氟有机溶剂处于液态; 第一罐，被配置为液化并存储从蒸馏箱送出的气态的第一含氟有机溶剂; 以及第二罐，其构造成以从所述蒸馏罐送出的液态存储所述第二含氟有机溶剂。

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