专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US11557492B2 Substrate processing apparatus and control method thereof 有权
公开(公告)号：US11557492B2
公开(公告)日：2023-01-17
申请号：US16890041
申请日：2020-06-02
申请人： Tokyo Electron Limited
发明人： Satoshi Biwa , Satoshi Okamura , Gentaro Goshi
IPC分类号： H01L21/67 , H01L21/02 , B08B3/04 , B08B7/04 , B08B7/00
摘要： A substrate processing apparatus includes: a processing container including a processing space capable of accommodating a substrate in a state where a surface of the substrate is wet by a liquid; a processing fluid supply that supplies a processing fluid in a supercritical state to the processing space toward the liquid; a first exhaust line connected to a first exhaust source; a second exhaust line connected to a second exhaust source and connected to the first exhaust line between the first exhaust source and the processing space; and a controller controlling the second exhaust pressure. The processing fluid in the supercritical state contacts the liquid to dry the substrate, and the controller makes the second exhaust pressure to be higher than the first exhaust pressure during a period in which the processing fluid supply stops supplying the processing fluid to the processing space.

2. 发明申请

US20190355574A1 SUBSTRATE PROCESSING METHOD, RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20190355574A1
公开(公告)日：2019-11-21
申请号：US16411404
申请日：2019-05-14
申请人： Tokyo Electron Limited
发明人： Itaru Kanno , Hiromi Kiyose , Gentaro Goshi , Naohiko Hamamura , Takuro Masuzumi , Kenji Sekiguchi , Satoru Tanaka , Teruomi Minami
IPC分类号： H01L21/02 , H01L21/67 , F26B3/28
摘要： A substrate processing method capable of suppressing particles from remaining on a surface of a substrate is provided. In the substrate processing method, a liquid film of a protection liquid is formed on the surface of the substrate, and the substrate is dried by using a supercritical fluid so that the protection liquid is removed from the surface of the substrate. After the substrate is dried, the particles remaining on the surface of the substrate is removed.

3. 发明申请

US20190051519A1 SUBSTRATE PROCESSING METHOD, RECORDING MEDIUM AND SUBSTRATE PROCESSING SYSTEM 审中-公开
公开(公告)号：US20190051519A1
公开(公告)日：2019-02-14
申请号：US16058032
申请日：2018-08-08
申请人： Tokyo Electron Limited
发明人： Kento Tsukano , Gentaro Goshi , Takuro Masuzumi , Hiromi Kiyose , Shogo Fukui
IPC分类号： H01L21/02 , H01L21/67 , H01L21/687 , B08B3/04 , B08B3/08 , B08B3/10
摘要： In a substrate processing method, as a liquid film forming process, a liquid film of a processing liquid covering a surface of a substrate W is formed by supplying the processing liquid onto the surface of the substrate W while rotating the substrate W at a first rotation number. After the liquid film forming process, as a supply stopping process, a rotation number of the substrate W is set to be of a value equal to or less than the first rotation number and a supply of the processing liquid onto the substrate W is stopped. After the supply stopping process, as a liquid amount adjusting process, a liquid amount of the processing liquid forming the liquid film is reduced by setting the rotation number of the substrate W to a rotation number larger than the first rotation number.

4. 发明申请

US20160093517A1 SUBSTRATE LIQUID PROCESSING METHOD, SUBSTRATE LIQUID PROCESSING APPARATUS, AND RECORDING MEDIUM 有权
标题翻译：基板液体处理方法，基板液体处理装置和记录介质
公开(公告)号：US20160093517A1
公开(公告)日：2016-03-31
申请号：US14851388
申请日：2015-09-11
申请人： Tokyo Electron Limited
发明人： Hiroyuki Higashi , Gentaro Goshi , Takahisa Otsuka
IPC分类号： H01L21/67 , H01L21/02 , B08B3/10
CPC分类号： H01L21/67051 , B08B3/02 , H01L21/02052
摘要： Disclosed is a substrate liquid processing method. The method includes: supplying a first processing liquid to a central portion of a substrate at a first flow rate by a first nozzle while rotating the substrate using a substrate holding unit; supplying a second processing liquid to a location between the central portion and an outer circumferential end of the substrate by a second nozzle while supplying the first processing liquid to the central portion of the substrate at the first flow rate; and changing the flow rate of the first processing liquid supplied from the first nozzle to a second flow rate lower than the first flow rate, so as to continue forming of the liquid film on the overall surface of the substrate while supplying the second processing liquid by the second nozzle to the substrate that is formed with a liquid film on the overall surface thereof.
摘要翻译：公开了一种基板液体处理方法。该方法包括：使用衬底保持单元旋转衬底，通过第一喷嘴以第一流量将第一处理液体供应到衬底的中心部分; 通过第二喷嘴将第二处理液体供应到基板的中心部分和外周端之间的位置，同时以第一流量将第一处理液体供应到基板的中心部分; 并且将从第一喷嘴供给的第一处理液的流量改变为低于第一流量的第二流量，以便在基板的整个表面上继续形成液膜，同时通过在其整个表面上形成有液膜的基板的第二喷嘴。

5. 发明授权

US11133176B2 Substrate processing method, recording medium and substrate processing system 有权
公开(公告)号：US11133176B2
公开(公告)日：2021-09-28
申请号：US16058032
申请日：2018-08-08
申请人： Tokyo Electron Limited
发明人： Kento Tsukano , Gentaro Goshi , Takuro Masuzumi , Hiromi Kiyose , Shogo Fukui
IPC分类号： H01L21/02 , H01L21/67 , B08B3/10 , B08B3/04 , B08B3/08 , H01L21/687 , H01L21/677
摘要： In a substrate processing method, as a liquid film forming process, a liquid film of a processing liquid covering a surface of a substrate W is formed by supplying the processing liquid onto the surface of the substrate W while rotating the substrate W at a first rotation number. After the liquid film forming process, as a supply stopping process, a rotation number of the substrate W is set to be of a value equal to or less than the first rotation number and a supply of the processing liquid onto the substrate W is stopped. After the supply stopping process, as a liquid amount adjusting process, a liquid amount of the processing liquid forming the liquid film is reduced by setting the rotation number of the substrate W to a rotation number larger than the first rotation number.

6. 发明申请

US20200246723A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
公开(公告)号：US20200246723A1
公开(公告)日：2020-08-06
申请号：US16782419
申请日：2020-02-05
申请人： Tokyo Electron Limited
发明人： Gentaro Goshi
IPC分类号： B01D11/04 , B05C11/10
摘要： A substrate processing apparatus includes a supercritical fluid producing apparatus including a pump configured to send out a processing fluid; a processing container configured to perform a supercritical fluid processing on a substrate with a processing fluid in a supercritical state sent from the supercritical fluid producing apparatus; and a controller configured to control at least the supercritical fluid producing apparatus. When a pressure increase is performed within the processing container by using the processing fluid, the controller determines a first supply rate at which the processing fluid is supplied to the processing container based on a target time during which the pressure increase is performed, an amount of the processing fluid required for the pressure increase and a density of the processing fluid. Further, the supercritical fluid producing apparatus supplies the processing fluid to the processing container based on the first supply rate.

7. 发明授权

US10576493B2 Substrate processing apparatus and substrate processing method 有权
公开(公告)号：US10576493B2
公开(公告)日：2020-03-03
申请号：US15919762
申请日：2018-03-13
申请人： Tokyo Electron Limited
发明人： Keisuke Egashira , Gentaro Goshi , Hiroshi Marumoto , Kento Tsukano
IPC分类号： B05C5/02 , B05C11/10 , H01L21/02 , H01L21/67 , B05D1/26
摘要： Provided is a substrate processing apparatus in which a drying process of drying a substrate using a processing fluid in a supercritical state is performed. The substrate processing apparatus includes: a processing container in which the drying process is performed; a discharge valve provided in a discharge flow path that discharges the processing fluid from the processing container; and a controller configured to control the discharge valve. When the inside of the processing container is decompressed from a first pressure at which the processing fluid is in the supercritical state to an atmospheric pressure, through a second pressure than the first pressure and a third pressure lower than the second pressure, the controller controls a valve opening degree of the discharge valve so that the decompression rate is equal from the second pressure to the third pressure.

8. 发明申请

US20200020550A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
公开(公告)号：US20200020550A1
公开(公告)日：2020-01-16
申请号：US16495142
申请日：2018-03-13
申请人： Tokyo Electron Limited
发明人： Gentaro Goshi , Keisuke Egashira , Kento Tsukano , Hiroshi Marumoto
IPC分类号： H01L21/67 , H01L21/66 , H01L21/02 , B08B7/00
摘要： A substrate processing apparatus 1 includes a drying processing unit 17, a drain line L2, an acquisition device 75 and a determination unit 19C. The drying processing unit 17 is configured to perform, by bringing a supercritical fluid into contact with a substrate having a surface wet by a liquid to replace the liquid with the supercritical fluid, a drying processing on the substrate. The drain line L2 is provided in the drying processing unit 17, and configured to drain the fluid from the drying processing unit 17. The acquisition device 75 is provided on the drain line L2, and configured to acquire optical information upon the fluid drained from the drying processing unit 17. The determination unit 19C is configured to detect presence or absence of the liquid within the drying processing unit 17 based on the optical information acquired by the acquisition device 75.

9. 发明申请

US20180130675A1 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND RECORDING MEDIUM 审中-公开
公开(公告)号：US20180130675A1
公开(公告)日：2018-05-10
申请号：US15801803
申请日：2017-11-02
申请人： Tokyo Electron Limited
发明人： Gentaro Goshi , Keisuke Egashira , Yosuke Kawabuchi , Hiromi Kiyose , Takuro Masuzumi , Hiroki Ohno , Kento Tsukano , Hiroshi Marumoto , Shotaro Kitayama
IPC分类号： H01L21/67 , H01L21/02 , B01J3/06 , B08B7/00 , B01J3/00
CPC分类号： H01L21/67034 , B01J3/008 , B01J3/06 , B08B7/0021 , H01L21/02057 , H01L21/02101 , H01L21/67051
摘要： A substrate processing apparatus performs: a pressure raising process of raising a pressure within the processing container to a processing pressure higher than a critical pressure of the processing fluid, after the substrate is accommodated in the processing container; and a circulation process of supplying the processing fluid to the processing container and discharging the processing fluid from the processing container while keeping a pressure at which the processing fluid is maintained in the supercritical state, within the processing container. In the pressure raising process, the supply of the processing fluid from the second fluid supply unit is stopped and the processing fluid is supplied from the first fluid supply unit into the processing container until at least the pressure within the processing container reaches the critical pressure. In the circulation process, the processing fluid is supplied into the processing container from the second fluid supply unit.

10. 发明申请

US20150031214A1 Chemical Fluid Processing Apparatus and Chemical Fluid Processing Method 审中-公开
标题翻译：化学流体处理设备和化学流体处理方法
公开(公告)号：US20150031214A1
公开(公告)日：2015-01-29
申请号：US14338656
申请日：2014-07-23
申请人： Tokyo Electron Limited
发明人： Derek W Bassett , Wallace P Printz , Gentaro Goshi , Hisashi Kawano , Yoshihiro Kai
IPC分类号： H01L21/67 , H01L21/306
CPC分类号： H01L21/6708 , H01L21/30604 , H01L21/32134
摘要： A chemical fluid processing apparatus and a chemical fluid processing method are described, to treat a substrate with a plurality of chemical fluids such that substantially constant temperature is maintained across a substrate surface. The apparatus includes a discharge nozzle above the substrate to supply a first chemical fluid at a first temperature to a front surface of the substrate, a bar nozzle oriented in a radial direction of the substrate to supply a second chemical fluid at a second temperature to the front surface or a back surface of the substrate, the second temperature being higher than the first temperature, and where the bar nozzle includes a plurality of outlets for discharging the second chemical fluid to a plurality of contacting places on the front surface or the back surface of the substrate at different distances from the center of the substrate.
摘要翻译：描述了一种化学流体处理装置和化学流体处理方法，用多种化学流体处理基板，使得跨基板表面保持基本恒定的温度。该设备包括位于基板上方的排放喷嘴，以将第一温度下的第一化学流体提供到基板的前表面，沿基板的径向定向的条形喷嘴，以将第二温度下的第二化学流体供应到所述第二温度高于所述第一温度，并且所述条形喷嘴包括用于将所述第二化学流体排放到所述前表面或所述背面上的多个接触位置的多个出口的距离衬底的中心不同的距离。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式