专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10516069B2 Absorber surface modification 有权
公开(公告)号：US10516069B2
公开(公告)日：2019-12-24
申请号：US14517961
申请日：2014-10-20
申请人： TSMC Solar Ltd.
发明人： Shih-Wei Chen
IPC分类号： H01L31/032 , B05C3/02 , B05C11/10 , H01L31/18 , H01L31/0749 , H01L31/0224 , H01L31/20
摘要： The present disclosure provides systems and methods for depositing an alkaline metal layer on an absorber to generate a copper-poor region at a surface of the absorber. The copper-poor region provides an increased efficiency over non-treated absorbers having copper-rich surfaces. The alkaline metal layer may be deposited by any suitable deposition method, such as, for example, a wet deposition method. After the alkaline metal layer is deposited, the absorber is annealed, causing the alkaline metal layer to interact with the absorber to reduce the copper-profile of the absorber at the interface between the alkaline metal layer and the absorber.

2. 发明授权

US09685569B2 Method of CIGS absorber formation 有权
公开(公告)号：US09685569B2
公开(公告)日：2017-06-20
申请号：US14203722
申请日：2014-03-11
申请人： TSMC Solar Ltd.
发明人： Shih-Wei Chen
IPC分类号： B05D5/12 , H01L31/032 , H01L31/0224
CPC分类号： H01L31/0322 , H01L31/022466 , Y02E10/541 , Y02P70/521
摘要： A method of forming a CIGS absorber wherein at least one source particle is selected and prepared as a powder or gel; the powder or gel is deposited on a substrate, compressed, and annealed. In some embodiments, a plurality of source particles are prepared as powders and mixed prior to deposition, compression, and annealing. In other embodiments, a plurality of source particles are individually deposited in layers, collectively compressed, and collectively annealed. In yet further embodiments, a plurality of source particles are individually deposited in layers, individually compressed, and collectively annealed.

3. 发明授权

US09537031B2 Nozzle assembly and method for fabricating a solar cell 有权
标题翻译：喷嘴组件及制造太阳能电池的方法
公开(公告)号：US09537031B2
公开(公告)日：2017-01-03
申请号：US13929827
申请日：2013-06-28
申请人： TSMC Solar Ltd.
发明人： Shih-Wei Chen
IPC分类号： H01L21/00 , H01L31/0463 , H01L21/67
CPC分类号： H01L31/0463 , H01L21/6715 , Y02E10/50
摘要： A method for fabricating a solar cell using a nozzle assembly that includes a base portion, a scriber coupled to the base portion, and a nozzle coupled to the base portion such that the nozzle is positioned a predefined distance from a tip of the scriber is provided. The method generally comprises positioning a substructure that includes a buffer layer and an absorber layer proximate to the base portion. A P2 line is scribed through the buffer and absorber layers of the substructure using the scriber tip. A nanoparticle solution is sprayed, using the nozzle, onto at least one portion of the buffer layer at a predefined pressure when the P2 line is being scribed through the buffer and absorber layers such that a transparent conductive oxide (TCO) layer is inhibited from forming over the portion of the buffer layer that is being sprayed with the nanoparticle solution.
摘要翻译：提供一种使用喷嘴组件制造太阳能电池的方法，所述喷嘴组件包括基部，连接到所述基部的划线器和连接到所述基部的喷嘴，使得所述喷嘴位于距离所述划线器的尖端预定距离的位置。该方法通常包括定位包括缓冲层和接近基部的吸收层的子结构。使用划线器尖端通过底层结构的缓冲层和吸收层划线P2线。当P2线通过缓冲层和吸收层进行划线时，使用喷嘴将纳米颗粒溶液以预定的压力喷射到缓冲层的至少一部分上，使得透明导电氧化物（TCO）层被抑制形成在被纳米颗粒溶液喷射的缓冲层的部分上。

4. 发明申请

US20150024538A1 VAPOR DISPENSING APPARATUS AND METHOD FOR SOLAR PANEL 审中-公开
标题翻译：太阳能电池的蒸汽分配装置和方法
公开(公告)号：US20150024538A1
公开(公告)日：2015-01-22
申请号：US13946231
申请日：2013-07-19
申请人： TSMC Solar Ltd.
发明人： Shih-Wei Chen
IPC分类号： H01L31/18 , H01L31/042
CPC分类号： H01L31/18 , C23C14/0629 , C23C14/243 , C23C14/562 , H01L31/0322 , H01L31/042 , H01L31/1876 , Y02E10/541 , Y02P70/521
摘要： An apparatus includes a manifold coupled to a vapor source, the manifold having a plurality of nozzles, an inner cylinder, and an outer cylinder containing the inner cylinder with a space defined between the inner and outer cylinders. One of the inner cylinder or outer cylinder is rotatable with respect to the other of the inner cylinder or outer cylinder. The outer cylinder has an inlet coupled to the manifold to receive vapor from the nozzles. The outer cylinder has an outlet for dispensing the vapor.
摘要翻译：一种装置包括联接到蒸汽源的歧管，歧管具有多个喷嘴，内筒以及包含内筒的外筒，该内筒具有限定在内筒和外筒之间的空间。内筒或外筒中的一个可相对于内筒或外筒中的另一个旋转。外筒具有联接到歧管的入口以接收来自喷嘴的蒸气。外筒具有用于分配蒸汽的出口。

5. 发明申请

US20140251420A1 TRANSPARENT CONDUCTIVE OXIDE LAYER WITH LOCALIZED ELECTRIC FIELD DISTRIBUTION AND PHOTOVOLTAIC DEVICE THEREOF 审中-公开
标题翻译：具有局部电场分布的透明导电氧化物层及其光电器件
公开(公告)号：US20140251420A1
公开(公告)日：2014-09-11
申请号：US13792702
申请日：2013-03-11
申请人： TSMC SOLAR LTD.
发明人： Shih-Wei Chen
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/022466 , B82Y30/00 , H01L31/02168 , H01L31/02363 , H01L31/073 , H01L31/0749 , H01L31/1828 , H01L31/1884 , Y02E10/541 , Y02E10/543
摘要： A photovoltaic device includes a substrate; a back contact layer disposed above the substrate; an absorber layer for photon absorption disposed above the back contact layer; a buffer layer disposed above the absorber layer; a conductive coating disposed above the buffer layer; and a transparent conductive layer disposed over the conductive coating. The conductive coating includes at least one type of nanomaterial, which has at least one dimension in the range of from 0.5 nm to 1000 nm.
摘要翻译：光伏器件包括：衬底; 设置在所述基板上方的背面接触层; 设置在所述背接触层上方的用于光子吸收的吸收层; 设置在吸收层上方的缓冲层; 设置在缓冲层上方的导电涂层; 以及设置在导电涂层上的透明导电层。导电涂层包括至少一种类型的纳米材料，其具有在0.5nm至1000nm范围内的至少一个维度。

6. 发明授权

US09496452B2 Method of absorber surface repairing by solution process 有权
标题翻译：溶液法吸收体表面修复方法
公开(公告)号：US09496452B2
公开(公告)日：2016-11-15
申请号：US14517959
申请日：2014-10-20
申请人： TSMC Solar Ltd.
发明人： Shih-Wei Chen
IPC分类号： H01L31/0749 , H01L31/18 , H01L31/032 , H01L21/02
CPC分类号： H01L31/186 , H01L21/02557 , H01L21/0256 , H01L21/02568 , H01L21/02628 , H01L21/02664 , H01L31/0322 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： Methods and systems for repairing oxidation of CIGS surfaces during manufacture of a CIGS solar cell are generally disclosed. Oxidation of an absorber reduces the photoluminescence intensity of the CIGS surface. The absorber is immersed in a reduction tank having a reducing reagent therein. The reducing reagent reverses the oxidation of the CIGS absorber, increasing the interface quality and corresponding photoluminescence intensity. After reversing the oxidation, a buffer layer is deposited on the CIGS absorber to prevent further surface oxidation.
摘要翻译：通常公开了在制造CIGS太阳能电池期间修复CIGS表面氧化的方法和系统。吸收剂的氧化降低了CIGS表面的光致发光强度。吸收器浸入其中具有还原剂的还原罐中。还原剂反转CIGS吸收剂的氧化，增加界面质量和相应的光致发光强度。在反转氧化之后，缓冲层沉积在CIGS吸收器上以防止进一步的表面氧化。

7. 发明授权

US09209341B2 Thin film solar cell and method of forming same 有权
标题翻译：薄膜太阳能电池及其形成方法
公开(公告)号：US09209341B2
公开(公告)日：2015-12-08
申请号：US14183555
申请日：2014-02-19
申请人： TSMC Solar Ltd.
发明人： Shih-Wei Chen
IPC分类号： H01L21/00 , H01L31/18 , H01L31/0216 , H01L31/032 , H01L31/0296 , H01L31/06
CPC分类号： H01L31/18 , H01L31/02167 , H01L31/0296 , H01L31/0322 , H01L31/0445 , H01L31/06 , H01L31/073 , H01L31/0749 , H01L31/186 , Y02E10/541 , Y02E10/543 , Y02P70/521
摘要： A solar cell device and a method of fabricating the device is described. The solar cell is fabricated by forming a back contact layer on a front side of a substrate, forming an absorber layer on the back contact layer, applying a protective layer on a back side of the substrate, depositing a buffer layer on the absorber layer. Excess buffer materials are deposited on the substrate back side, and the protective layer with excess buffer materials are removed.
摘要翻译：对太阳能电池装置及其制造方法进行说明。太阳能电池通过在基板的正面上形成背面接触层，在背面接触层上形成吸收层，在基板的背面侧设置保护层，在吸收体层上形成缓冲层来制造。过多的缓冲材料沉积在基板背面，并且除去具有多余缓冲材料的保护层。

8. 发明授权

US08846438B2 Method for indium sputtering and for forming chalcopyrite-based solar cell absorber layers 有权
标题翻译：用于铟溅射和形成基于黄铜矿的太阳能电池吸收层的方法
公开(公告)号：US08846438B2
公开(公告)日：2014-09-30
申请号：US14219628
申请日：2014-03-19
申请人： TSMC Solar Ltd.
发明人： Wen-Tsai Yen , Chung-Hsien Wu , Shih-Wei Chen , Wen-Chin Lee
IPC分类号： H01L21/00 , H01L31/18
CPC分类号： H01L31/18 , H01L31/03923 , Y02E10/541
摘要： A solar cell includes an absorber layer formed of a CIGAS, copper, indium, gallium, aluminum, and selenium. A method for forming the absorber layer provides for using an indium-aluminum target and depositing an aluminum-indium film as a metal precursor layer using sputter deposition. Additional metal precursor layers such as a CuGa layer are also provided and a thermal processing operation causes the selenization of the metal precursor layers. The thermal processing operation/selenization operation converts the metal precursor layers to an absorber layer. In some embodiments, the absorber layer includes a double graded chalcopyrite-based bandgap.
摘要翻译：太阳能电池包括由CIGAS，铜，铟，镓，铝和硒形成的吸收层。用于形成吸收层的方法提供使用铟 - 铝靶并使用溅射沉积沉积作为金属前体层的铝铟膜。还提供另外的金属前体层，例如CuGa层，并且热处理操作引起金属前体层的硒化。热处理操作/硒化操作将金属前体层转换成吸收层。在一些实施例中，吸收层包括基于双梯度黄铜矿的带隙。

9. 发明授权

US08703524B1 Indium sputtering method and materials for chalcopyrite-based material usable as solar cell absorber layers 有权
标题翻译：铟溅射法和可用作太阳能电池吸收层的黄铜矿基材料
公开(公告)号：US08703524B1
公开(公告)日：2014-04-22
申请号：US13689091
申请日：2012-11-29
申请人： TSMC Solar Ltd.
发明人： Wen-Tsai Yen , Chung-Hsien Wu , Shih-Wei Chen , Wen-Chin Lee
IPC分类号： H01L21/00
CPC分类号： H01L31/18 , H01L31/03923 , Y02E10/541
摘要： A solar cell includes an absorber layer formed of a CIGAS, copper, indium, gallium, aluminum, and selenium. A method for forming the absorber layer provides for using an indium-aluminum target and depositing an aluminum-indium film as a metal precursor layer using sputter deposition. Additional metal precursor layers such as a CuGa layer are also provided and a thermal processing operation causes the selenization of the metal precursor layers. The thermal processing operation/selenization operation converts the metal precursor layers to an absorber layer. In some embodiments, the absorber layer includes a double graded chalcopyrite-based bandgap.
摘要翻译：太阳能电池包括由CIGAS，铜，铟，镓，铝和硒形成的吸收层。用于形成吸收层的方法提供使用铟 - 铝靶并使用溅射沉积沉积作为金属前体层的铝铟膜。还提供另外的金属前体层，例如CuGa层，并且热处理操作引起金属前体层的硒化。热处理操作/硒化操作将金属前体层转换成吸收层。在一些实施例中，吸收层包括基于双梯度黄铜矿的带隙。

10. 发明授权

US09825197B2 Method of forming a buffer layer in a solar cell, and a solar cell formed by the method 有权
公开(公告)号：US09825197B2
公开(公告)日：2017-11-21
申请号：US13781920
申请日：2013-03-01
申请人： TSMC Solar Ltd.
发明人： Shih-Wei Chen
IPC分类号： H01L31/18 , H01L31/0296 , H01L31/0749 , H01L21/02
CPC分类号： H01L31/1828 , H01L21/02425 , H01L21/02485 , H01L21/02551 , H01L21/02568 , H01L21/02614 , H01L31/02966 , H01L31/0749 , Y02E10/541 , Y02E10/543
摘要： A method of fabricating a buffer layer of a photovoltaic device comprises: providing a substrate having a back contact layer disposed above the substrate and an absorber layer disposed above the back contact layer; depositing a metal layer on the absorber layer; and performing a thermal treatment on the deposited metal layer in an atmosphere comprising sulfur, selenium or oxygen, to form a buffer layer.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式