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1. 发明授权

US11342379B2 Trench formation scheme for programmable metallization cell to prevent metal redeposit 有权
公开(公告)号：US11342379B2
公开(公告)日：2022-05-24
申请号：US16408898
申请日：2019-05-10
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Fu-Ting Sung , Chung-Chiang Min , Yuan-Tai Tseng
IPC分类号： H01L27/24 , H01L45/00 , G11C5/06 , G11C13/00
摘要： Some embodiments relate to a memory device. The memory device includes a top electrode overlying a bottom electrode. A data storage layer overlies the bottom electrode. The bottom electrode cups an underside of the data storage layer. The top electrode overlies the data storage layer. A top surface of the bottom electrode is aligned with a top surface of the top electrode.

2. 发明授权

US11258007B2 Reversed stack MTJ 有权
公开(公告)号：US11258007B2
公开(公告)日：2022-02-22
申请号：US17065606
申请日：2020-10-08
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Wei-Hang Huang , Fu-Ting Sung , Chern-Yow Hsu , Shih-Chang Liu , Chia-Shiung Tsai
IPC分类号： H01L43/08 , H01L43/12 , H01L43/02 , H01L43/10
摘要： An integrated circuit device includes a substrate and a magnetic tunneling junction (MTJ). The MTJ includes at least a pinned layer, a barrier layer, and a free layer. The MTJ is formed over a surface of the substrate. Of the pinned layer, the barrier layer, and the free layer, the free layer is formed first and is closest to the surface. This enables a spacer to be formed over a perimeter region of the free layer prior to etching the free layer. Any damage to the free layer that results from etching or other free layer edge-defining process is kept at a distance from the tunneling junction by the spacer.

3. 发明授权

US10510952B2 Storage device with composite spacer and method for manufacturing the same 有权
公开(公告)号：US10510952B2
公开(公告)日：2019-12-17
申请号：US15783030
申请日：2017-10-13
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Fu-Ting Sung , Chern-Yow Hsu , Shih-Chang Liu
IPC分类号： H01L45/00 , H01L43/12 , H01L21/311
摘要： A storage device includes a first electrode, a stacked feature, a spacer and a barrier structure. The stacked feature is position over the first electrode, and includes a storage element and a second electrode over the storage element. The spacer is positioned on a sidewall of the stacked feature, the spacer having a notch positioned on a top surface of the spacer, in which the notch of the spacer has a surface which is continuous with a top surface of the stacked feature. The barrier structure is embedded in a lateral of the spacer. The barrier structure has a top extending upwards past a bottom of the notch.

4. 发明申请

US20160043306A1 REVERSED STACK MTJ 有权
标题翻译：反向堆叠MTJ
公开(公告)号：US20160043306A1
公开(公告)日：2016-02-11
申请号：US14918671
申请日：2015-10-21
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Wei-Hang Huang , Fu-Ting Sung , Chern-Yow Hsu , Shih-Chang Liu , Chia-Shiung Tsai
IPC分类号： H01L43/08 , H01L43/02 , H01L43/12
CPC分类号： H01L43/08 , H01L43/02 , H01L43/10 , H01L43/12
摘要： An integrated circuit device includes a substrate and a magnetic tunneling junction (MTJ). The MTJ includes at least a pinned layer, a barrier layer, and a free layer. The MTJ is formed over a surface of the substrate. Of the pinned layer, the barrier layer, and the free layer, the free layer is formed first and is closest to the surface. This enables a spacer to be formed over a perimeter region of the free layer prior to etching the free layer. Any damage to the free layer that results from etching or other free layer edge-defining process is kept at a distance from the tunneling junction by the spacer.
摘要翻译：集成电路器件包括衬底和磁隧道结（MTJ）。 MTJ至少包括钉扎层，阻挡层和自由层。 MTJ形成在衬底的表面上。在被钉扎层，阻挡层和自由层中，自由层首先形成并且最接近表面。这使得在蚀刻自由层之前，可以在自由层的周边区域上形成间隔物。由蚀刻或其它自由层边界限定工艺导致的对自由层的任何损伤通过间隔物保持与隧道结一定距离。

5. 发明授权

US09209392B1 RRAM cell with bottom electrode 有权
标题翻译：带底电极的RRAM电池
公开(公告)号：US09209392B1
公开(公告)日：2015-12-08
申请号：US14513781
申请日：2014-10-14
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Fu-Ting Sung , Chern-Yow Hsu , Shih-Chang Liu
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/1233 , H01L45/08 , H01L45/1273 , H01L45/146 , H01L45/16 , H01L45/1675
摘要： The present disclosure relates to a resistive random access memory (RRAM) cell having a bottom electrode that provides for efficient switching of the RRAM cell, and an associated method of formation. In some embodiments, the RRAM cell has a bottom electrode surrounded by a spacer and a bottom dielectric layer. The bottom electrode, the spacer, and the bottom dielectric layer are disposed over a lower metal interconnect layer surrounded by a lower inter-level dielectric (ILD) layer. A dielectric data storage layer having a variable resistance is located above the bottom dielectric layer and the bottom electrode, and a top electrode is disposed over the dielectric data storage layer. Placement of the spacer narrows the later formed bottom electrode, thereby improving switch efficiency of the RRAM cell.
摘要翻译：本公开涉及具有提供RRAM单元的有效切换的底部电极的电阻随机存取存储器（RRAM）单元以及相关联的形成方法。在一些实施例中，RRAM单元具有由间隔物和底部电介质层包围的底部电极。底部电极，间隔物和底部电介质层设置在由下部电介质层（ILD）层围绕的下部金属互连层上。具有可变电阻的电介质数据存储层位于底部电介质层和底部电极之上，并且顶部电极设置在电介质数据存储层上。间隔物的放置使后面形成的底部电极变窄，从而提高RRAM电池的开关效率。

6. 发明授权

US09048316B2 Flash memory structure and method of forming the same 有权
标题翻译：闪存结构及其形成方法
公开(公告)号：US09048316B2
公开(公告)日：2015-06-02
申请号：US14013653
申请日：2013-08-29
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
发明人： Fu-Ting Sung , Chung-Chiang Min , Wei-Hang Huang , Shih-Chang Liu , Chia-Shiung Tsai
IPC分类号： H01L27/115 , G11C16/16 , H01L29/78 , H01L21/28
CPC分类号： H01L27/11568 , H01L21/28 , H01L21/28273 , H01L21/28282 , H01L21/76805 , H01L23/528 , H01L27/11521 , H01L29/34 , H01L29/42324 , H01L29/4234 , H01L29/4916 , H01L29/66825 , H01L29/7831 , H01L29/788 , H01L29/7881 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of mechanisms of a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a word line cell disposed over the substrate. The semiconductor device further includes a memory gate disposed over the substrate and adjacent to the word line cell and a spacer on a sidewall of the memory gate. The spacer and the word line cell are at opposite sides of the memory gate. In addition, an angle between a top surface of the memory gate and a sidewall of the memory gate is in a range from about 75° to about 90°.
摘要翻译：提供半导体器件结构的机构的实施例。半导体器件结构包括衬底和设置在衬底上的字线单元。半导体器件还包括设置在衬底上并与字线单元相邻并且在存储器栅极的侧壁上的间隔物的存储器栅极。间隔物和字线单元位于存储器栅极的相对侧。此外，存储器栅极的顶表面和存储器栅极的侧壁之间的角度在约75°至约90°的范围内。

7. 发明授权

US11227993B2 Device with composite spacer and method for manufacturing the same 有权
公开(公告)号：US11227993B2
公开(公告)日：2022-01-18
申请号：US16715868
申请日：2019-12-16
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Fu-Ting Sung , Chern-Yow Hsu , Shih-Chang Liu
IPC分类号： H01L45/00 , H01L43/12
摘要： A device includes a first conductive via plug, a first electrode, a storage element, a second electrode, a spacer, a barrier structure, a first dielectric layer. The first electrode is over the first conductive via plug. The storage element is over the first electrode. The second electrode is over the storage element. The spacer has a bottom portion extending along a top surface of the first electrode and a standing portion extending from the bottom portion and along a sidewall of the second electrode. The barrier structure extends from the bottom portion of the spacer and along a sidewall of the standing portion of the spacer. The first dielectric layer is substantially conformally over the spacer and the barrier structure.

8. 发明授权

US10355011B2 Method for forming flash memory structure 有权
公开(公告)号：US10355011B2
公开(公告)日：2019-07-16
申请号：US15855940
申请日：2017-12-27
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Fu-Ting Sung , Chung-Chiang Min , Wei-Hang Huang , Shih-Chang Liu , Chia-Shiung Tsai
IPC分类号： H01L21/28 , H01L29/34 , H01L29/49 , H01L29/66 , H01L29/78 , H01L21/768 , H01L23/528 , H01L29/423 , H01L29/788 , H01L27/11521 , H01L27/11568
摘要： Methods for forming semiconductor structures are provided. The method for forming the semiconductor structure includes forming a control gate over a substrate and forming a dielectric layer covering the control gate. The method further includes forming a conductive layer having a first portion and a second portion over the dielectric layer. In addition, the first portion of the conductive layer is separated from the control gate by the dielectric layer. The method further includes forming an oxide layer on a top surface of the first portion of the conductive layer and removing the second portion of the conductive layer to form a memory gate.

9. 发明授权

US09859295B2 Method for forming flash memory structure 有权
公开(公告)号：US09859295B2
公开(公告)日：2018-01-02
申请号：US15425647
申请日：2017-02-06
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Fu-Ting Sung , Chung-Chiang Min , Wei-Hang Huang , Shih-Chang Liu , Chia-Shiung Tsai
IPC分类号： H01L27/11568 , H01L29/49 , H01L29/423 , H01L21/28 , H01L21/768
CPC分类号： H01L27/11568 , H01L21/28 , H01L21/28273 , H01L21/28282 , H01L21/76805 , H01L23/528 , H01L27/11521 , H01L29/34 , H01L29/42324 , H01L29/4234 , H01L29/4916 , H01L29/66825 , H01L29/7831 , H01L29/788 , H01L29/7881 , H01L2924/0002 , H01L2924/00
摘要： Methods for forming semiconductor structures are provided. The method for forming the semiconductor structure includes forming a word line cell over a substrate and forming a dielectric layer over the word line cell. The method further includes forming a conductive layer over the dielectric layer and polishing the conductive layer until the dielectric layer is exposed. The method further includes forming an oxide layer on a top surface of the conductive layer and removing portions of the conductive layer not covered by the oxide layer to form a memory gate.

10. 发明授权

US09564448B2 Flash memory structure 有权
标题翻译：闪存结构
公开(公告)号：US09564448B2
公开(公告)日：2017-02-07
申请号：US14718171
申请日：2015-05-21
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Fu-Ting Sung , Chung-Chiang Min , Wei-Hang Huang , Shih-Chang Liu , Chia-Shiung Tsai
IPC分类号： H01L29/788 , H01L21/283 , H01L27/115 , H01L29/78 , H01L21/28 , H01L29/34 , H01L29/423 , H01L29/66 , H01L23/528 , H01L29/49
CPC分类号： H01L27/11568 , H01L21/28 , H01L21/28273 , H01L21/28282 , H01L21/76805 , H01L23/528 , H01L27/11521 , H01L29/34 , H01L29/42324 , H01L29/4234 , H01L29/4916 , H01L29/66825 , H01L29/7831 , H01L29/788 , H01L29/7881 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a control gate formed over the substrate. The semiconductor device structure further includes a memory gate formed over the substrate and a first spacer formed on a sidewall of the memory gate. The semiconductor device structure further includes a contact formed over the memory gate, wherein a portion of the contact extends into the first spacer.
摘要翻译：提供半导体器件结构。半导体器件结构包括衬底和形成在衬底上的控制栅极。半导体器件结构还包括形成在衬底上的存储器栅极和形成在存储器栅极的侧壁上的第一间隔物。半导体器件结构还包括形成在存储器栅极上的触点，其中触点的一部分延伸到第一间隔物中。

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