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    • 6. 发明申请
    • Self-Aligned Split Gate Flash Memory
    • 自对准分流门闪存
    • US20160086965A1
    • 2016-03-24
    • US14493568
    • 2014-09-23
    • Taiwan Semiconductor Manufacturing Co., Ltd.
    • Tsung-Hsueh YangChung-Chiang MinChang-Ming WuShih-Chang Liu
    • H01L27/115
    • H01L29/42344H01L27/1157H01L29/792
    • The present disclosure relates to a self-aligned split gate memory cell, and an associated method. The self-aligned split gate memory cell has cuboid shaped memory gate and select gate covered upper surfaces by some spacers. Thus the memory gate and select gate are protected from silicide. The memory gate and select gate are defined self-aligned by the said spacers. The memory gate and select gate are formed by etching back corresponding conductive materials not covered by the spacers instead of recess processes. Thus the memory gate and select gate have planar upper surfaces and are well defined. The disclosed device and method is also capable of further scaling since photolithography processes are reduced.
    • 本公开涉及自对准分离门存储器单元及其相关方法。 自对准分离栅极存储单元具有立方形形状的存储栅极,并且通过一些间隔物选择栅极覆盖的上表面。 因此,存储器栅极和选择栅极被保护以防止硅化物。 存储器栅极和选择栅极被所述间隔物自对准地限定。 存储栅极和选择栅极通过蚀刻不被间隔物覆盖的相应导电材料而不是凹陷工艺而形成。 因此,存储器栅极和选择栅极具有平坦的上表面并且被明确定义。 所公开的装置和方法还能够进一步缩放,因为光刻工艺被减少。