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1. 发明授权

US09438163B2 Ultra-low voltage-controlled oscillator with trifilar coupling 有权
公开(公告)号：US09438163B2
公开(公告)日：2016-09-06
申请号：US14612415
申请日：2015-02-03
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Ying-Ta Lu , Hsien-Yuan Liao , Ho-Hsiang Chen , Chewn-Pu Jou
IPC分类号： H03B5/12 , H03B1/00
CPC分类号： H03B5/1212 , H03B1/00 , H03B5/1218 , H03B5/1228 , H03B5/1256 , H03B5/1296 , H03B2200/0078 , H03B2200/0082 , Y10T29/4902
摘要： The present disclosure relates to a device and method to reduce voltage headroom within a voltage-controlled oscillator by utilizing trifilar coupling or transformer feedback with a capacitive coupling technique. In some embodiments of trifilar coupling, a VCO comprises cross-coupled single-ended oscillators, wherein the voltage of first gate within a first single-ended oscillator is separated from the voltage of a second drain within a second single-ended oscillator within the cross-coupled pair. A trifilar coupling network is composed of a drain inductive component, a source inductive component, and a gate inductive component for a single-ended oscillator, wherein a coupling between drain inductive components and gate inductive components between single-ended oscillators along with a negative feedback loop within each single-ended oscillator forms a cross-coupled pair of transistors which reduces the drain-to-source voltage headroom to approximately a saturation voltage of a transistor within the cross-coupled pair. Other devices and methods are also disclosed.

2. 发明申请

US20140203881A1 Ultra-Low Voltage-Controlled Oscillator with Trifilar Coupling 有权
标题翻译：具有三联耦合的超低压控振荡器
公开(公告)号：US20140203881A1
公开(公告)日：2014-07-24
申请号：US13744497
申请日：2013-01-18
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Ying-Ta Lu , Hsien-Yuan Liao , Ho-Hsiang Chen , Chewn-Pu Jou
IPC分类号： H03B1/00
CPC分类号： H03B5/1212 , H03B1/00 , H03B5/1218 , H03B5/1228 , H03B5/1256 , H03B5/1296 , H03B2200/0078 , H03B2200/0082 , Y10T29/4902
摘要： The present disclosure relates to a device and method to reduce voltage headroom within a voltage-controlled oscillator by utilizing trifilar coupling or transformer feedback with a capacitive coupling technique. In some embodiments of trifilar coupling, a VCO comprises cross-coupled single-ended oscillators, wherein the voltage of first gate within a first single-ended oscillator is separated from the voltage of a second drain within a second single-ended oscillator within the cross-coupled pair. A trifilar coupling network is composed of a drain inductive component, a source inductive component, and a gate inductive component for a single-ended oscillator, wherein a coupling between drain inductive components and gate inductive components between single-ended oscillators along with a negative feedback loop within each single-ended oscillator forms a cross-coupled pair of transistors which reduces the drain-to-source voltage headroom to approximately a saturation voltage of a transistor within the cross-coupled pair. Other devices and methods are also disclosed.
摘要翻译：本公开涉及通过利用电容耦合技术利用三相耦合或变压器反馈来减小压控振荡器内的电压余量的装置和方法。在三相耦合的一些实施例中，VCO包括交叉耦合单端振荡器，其中第一单端振荡器内的第一栅极的电压与交叉内的第二单端振荡器内的第二漏极的电压分离 - 耦合对。三相耦合网络由用于单端振荡器的漏极电感分量，源极电感分量和栅极电感分量组成，其中在单端振荡器之间的漏极电感分量和栅极电感分量之间的耦合以及负反馈每个单端振荡器内的环路形成交叉耦合的晶体管对，其将漏极到源极的电压余量减小到交叉耦合对内的晶体管的饱和电压的近似饱和电压。还公开了其它装置和方法。

3. 发明授权

US10236824B2 Ultra-low power voltage controlled oscillator 有权
公开(公告)号：US10236824B2
公开(公告)日：2019-03-19
申请号：US15297580
申请日：2016-10-19
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Jun-De Jin , Ying-Ta Lu , Hsien-Yuan Liao
IPC分类号： H03B5/04 , H03B5/12
摘要： A voltage controlled oscillator (“VCO”) circuit is disclosed. The VCO includes a switch module comprising a first transistor and a second transistor; a first LC-tank module, the first LC-tank module is operatively connected between the drain of the first transistor and the drain of the second transistor; and a second LC-tank module, the second LC-tank module is operatively connected between the gate of the first transistor and the gate of the second transistor, the source of the first transistor and the source of the second transistor are operatively connected.

4. 发明申请

US20180109225A1 ULTRA-LOW POWER VOLTAGE CONTROLLED OSCILLATOR 审中-公开
公开(公告)号：US20180109225A1
公开(公告)日：2018-04-19
申请号：US15297580
申请日：2016-10-19
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Jun-De JIN , Ying-Ta Lu , Hsien-Yuan Liao
IPC分类号： H03B5/12
CPC分类号： H03B5/1212 , H03B5/04 , H03B5/1215 , H03B5/1228 , H03B5/124 , H03B5/1243 , H03B5/1296
摘要： A voltage controlled oscillator (“VCO”) circuit is disclosed. The VCO includes a switch module comprising a first transistor and a second transistor; a first LC-tank module, the first LC-tank module is operatively connected between the drain of the first transistor and the drain of the second transistor; and a second LC-tank module, the second LC-tank module is operatively connected between the gate of the first transistor and the gate of the second transistor, the source of the first transistor and the source of the second transistor are operatively connected.

5. 发明授权

US09293521B2 Concentric capacitor structure 有权
标题翻译：同心电容器结构
公开(公告)号：US09293521B2
公开(公告)日：2016-03-22
申请号：US14454760
申请日：2014-08-08
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Ying-Ta Lu , Chi-Hsien Lin , Hsien-Yuan Liao , Ho-Hsiang Chen , Tzu-Jin Yeh
IPC分类号： H01L21/02 , H01L49/02 , H01L23/522 , H01L27/02
CPC分类号： H01L28/88 , H01L23/5223 , H01L27/0207 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： A concentric capacitor structure generally comprising concentric capacitors is disclosed. Each concentric capacitor comprises a first plurality of perimeter plates formed on a first layer of a substrate and a second plurality of perimeter plates formed on a second layer of the substrate. The first plurality of perimeter plates extend in a first direction and the second plurality of perimeter plates extend in a second direction different than the first direction. A first set of the first plurality of perimeter plates is electrically coupled to a first set of the second plurality of perimeter plates and a second set of the first plurality of perimeter plates is electrically coupled to a second set of the second plurality of perimeter plates. A plurality of capacitive cross-plates are formed in the first layer such that each cross-plate overlaps least two of the second plurality of perimeter plates.
摘要翻译：公开了通常包括同心电容器的同心电容器结构。每个同心电容器包括形成在衬底的第一层上的第一多个周边板和形成在衬底的第二层上的第二多个周边板。第一多个周边板沿第一方向延伸，第二多个周边板沿与第一方向不同的第二方向延伸。第一组第一组多个周边板电耦合到第一组第二多个周边板，第二组第一组周边板电耦合到第二组第二组周边板。在第一层中形成多个电容性交叉板，使得每个交叉板与第二多个周边板中的至少两个重叠。

6. 发明授权

US09159718B2 Switched capacitor structure 有权
标题翻译：开关电容器结构
公开(公告)号：US09159718B2
公开(公告)日：2015-10-13
申请号：US13789825
申请日：2013-03-08
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Hsiao-Tsung Yen , Ying-Ta Lu , Ho-Hsiang Chen , Chewn-Pu Jou
IPC分类号： H01L21/02 , H01L27/02 , H01L23/522
CPC分类号： H01L27/0207 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： A capacitor structure comprising semiconductor substrate and a matrix of capacitor units formed over the semiconductor substrate each capacitor unit. The matrix includes an interior structure comprised of one or more vertical plates, each vertical plate of the interior structure formed from a plurality of conductive portions connected vertically to each other, an exterior structure comprised of one or more vertical plates, each vertical plate of the exterior structure formed from a plurality of conductive portions connected vertically to each other, the exterior structure substantially encompassing the interior structure, and insulative material separating the interior and exterior structures. The structure also comprises a switching mechanism included in the capacitor structure to switch between ones of the plural capacitor units.
摘要翻译：一种电容器结构，包括半导体衬底和形成在半导体衬底上的每个电容器单元上的电容器单元的矩阵。该矩阵包括由一个或多个垂直板构成的内部结构，内部结构的每个垂直板由彼此垂直连接的多个导电部分形成，外部结构由一个或多个垂直板组成，每个垂直板外部结构由彼此垂直连接的多个导电部分形成，外部结构基本上包围内部结构，以及分离内部和外部结构的绝缘材料。该结构还包括在电容器结构中包括的切换机构以在多个电容器单元中的一个之间切换。

7. 发明授权

US08975979B2 Transformer with bypass capacitor 有权
标题翻译：带旁路电容的变压器
公开(公告)号：US08975979B2
公开(公告)日：2015-03-10
申请号：US14017612
申请日：2013-09-04
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Hsiao-Tsung Yen , Yu-Ling Lin , Ying-Ta Lu , Chin-Wei Kuo , Ho-Hsiang Chen
IPC分类号： H03H7/42 , H01L23/522 , H01F17/00 , H01F17/02
CPC分类号： H01L23/5227 , H01F17/0006 , H01F2017/0086 , H01L23/5223 , H01L2924/0002 , Y10T29/41 , H01L2924/00
摘要： An electronic device comprises first, second and third inductors connected in series and formed in a metal layer over a semiconductor substrate. The first and second inductors have a mutual inductance with each other. The second and third inductors having a mutual inductance with each other. A first capacitor has a first electrode connected to a first node. The first node is conductively coupled between the first and second inductors. A second capacitor has a second electrode connected to a second node. The second node is conductively coupled between the second and third inductors.
摘要翻译：电子器件包括串联连接并形成在半导体衬底上的金属层中的第一，第二和第三电感器。第一和第二电感器具有彼此的互感。第二和第三电感器具有彼此的互感。第一电容器具有连接到第一节点的第一电极。第一节点电导耦合在第一和第二电感器之间。第二电容器具有连接到第二节点的第二电极。第二节点电导耦合在第二和第三电感器之间。

8. 发明授权

US09660019B2 Concentric capacitor structure 有权
公开(公告)号：US09660019B2
公开(公告)日：2017-05-23
申请号：US15075759
申请日：2016-03-21
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Ying-Ta Lu , Chi-Hsien Lin , Hsien-Yuan Liao , Ho-Hsiang Chen , Tzu-Jin Yeh
IPC分类号： H01L21/02 , H01L49/02 , H01L23/522 , H01L27/02
CPC分类号： H01L28/88 , H01L23/5223 , H01L27/0207 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： A concentric capacitor structure generally comprising concentric capacitors is disclosed. Each concentric capacitor comprises a first plurality of perimeter plates formed on a first layer of a substrate and a second plurality of perimeter plates formed on a second layer of the substrate. The first plurality of perimeter plates extend in a first direction and the second plurality of perimeter plates extend in a second direction different than the first direction. A first set of the first plurality of perimeter plates is electrically coupled to a first set of the second plurality of perimeter plates and a second set of the first plurality of perimeter plates is electrically coupled to a second set of the second plurality of perimeter plates. A plurality of capacitive cross-plates are formed in the first layer such that each cross-plate overlaps least two of the second plurality of perimeter plates.

9. 发明授权

US09425735B2 Voltage-controlled oscillator 有权
标题翻译：压控振荡器
公开(公告)号：US09425735B2
公开(公告)日：2016-08-23
申请号：US14701175
申请日：2015-04-30
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Ying-Ta Lu , Hsien-Yuan Liao , Chi-Hsien Lin , Hsiao-Tsung Yen , Ho-Hsiang Chen , Chewn-Pu Jou
IPC分类号： H03B5/12
CPC分类号： H03B5/1212 , H03B5/1215 , H03B5/1228 , H03B5/1243 , H03B5/1296
摘要： An apparatus is disclosed that includes a first cross-coupled transistor pair, a second cross-coupled transistor pair, at least one capacitance unit, and a first, second, third, and fourth inductive elements. The first cross-coupled transistor pair and second cross-coupled transistor pair are coupled to a pair of first output nodes and a pair of second output nodes, respectively. The at least one capacitance unit is coupled to at least one of the pair of first output nodes and the pair of second output nodes. The first and second inductive elements are electrically coupled to the first output nodes, respectively. The third inductive element is electrically coupled to one of the second output nodes and DC-biased and magnetically coupled to the first inductive element. The fourth inductive element is electrically coupled to the other of the second output nodes and DC-biased and magnetically coupled to the second inductive element.
摘要翻译：公开了一种装置，其包括第一交叉耦合晶体管对，第二交叉耦合晶体管对，至少一个电容单元以及第一，第二，第三和第四电感元件。第一交叉耦合晶体管对和第二交叉耦合晶体管对分别耦合到一对第一输出节点和一对第二输出节点。所述至少一个电容单元耦合到所述一对第一输出节点和所述一对第二输出节点中的至少一个。第一和第二电感元件分别电耦合到第一输出节点。第三感应元件电耦合到第二输出节点中的一个并被直流偏置并且磁耦合到第一电感元件。第四电感元件电耦合到第二输出节点中的另一个并且被直流偏置并且磁耦合到第二电感元件。

10. 发明申请

US20150145612A1 ULTRA-LOW VOLTAGE-CONTROLLED OSCILLATOR WITH TRIFILAR COUPLING 有权
标题翻译：超低电压控制振荡器，具有三极管耦合
公开(公告)号：US20150145612A1
公开(公告)日：2015-05-28
申请号：US14612415
申请日：2015-02-03
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Ying-Ta Lu , Hsien-Yuan Liao , Ho-Hsiang Chen , Chewn-Pu Jou
IPC分类号： H03B5/12
CPC分类号： H03B5/1212 , H03B1/00 , H03B5/1218 , H03B5/1228 , H03B5/1256 , H03B5/1296 , H03B2200/0078 , H03B2200/0082 , Y10T29/4902
摘要： The present disclosure relates to a device and method to reduce voltage headroom within a voltage-controlled oscillator by utilizing trifilar coupling or transformer feedback with a capacitive coupling technique. In some embodiments of trifilar coupling, a VCO comprises cross-coupled single-ended oscillators, wherein the voltage of first gate within a first single-ended oscillator is separated from the voltage of a second drain within a second single-ended oscillator within the cross-coupled pair. A trifilar coupling network is composed of a drain inductive component, a source inductive component, and a gate inductive component for a single-ended oscillator, wherein a coupling between drain inductive components and gate inductive components between single-ended oscillators along with a negative feedback loop within each single-ended oscillator forms a cross-coupled pair of transistors which reduces the drain-to-source voltage headroom to approximately a saturation voltage of a transistor within the cross-coupled pair. Other devices and methods are also disclosed.
摘要翻译：本公开涉及通过利用电容耦合技术利用三相耦合或变压器反馈来减小压控振荡器内的电压余量的装置和方法。在三相耦合的一些实施例中，VCO包括交叉耦合单端振荡器，其中第一单端振荡器内的第一栅极的电压与交叉内的第二单端振荡器内的第二漏极的电压分离 - 耦合对。三相耦合网络由用于单端振荡器的漏极电感分量，源极电感分量和栅极电感分量组成，其中在单端振荡器之间的漏极电感分量和栅极电感分量之间的耦合以及负反馈每个单端振荡器内的环路形成交叉耦合的晶体管对，其将漏极到源极的电压余量减小到交叉耦合对内的晶体管的饱和电压。还公开了其它装置和方法。

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