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    • 7. 发明授权
    • Vertical metal insulator metal capacitor
    • 垂直金属绝缘子金属电容器
    • US09343237B2
    • 2016-05-17
    • US14600777
    • 2015-01-20
    • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    • Lan-Chou ChoChewn-Pu Jou
    • H01G4/30H01G4/38H01G4/005H01L23/522H01L49/02H01L27/08
    • H01G4/306H01G4/005H01G4/38H01L23/5223H01L27/0805H01L28/60H01L2924/0002H01L2924/00
    • A capacitor structure includes at least two capacitors. A first electrode includes a bottom conductive plane and first vertical conductive structures. The bottom conductive plane is disposed over a substrate. The bottom conductive plane has a first area and a first shape. At least two second electrodes include top conductive planes and second vertical conductive structures. A combined area of the top conductive planes and a gap area between adjacent top conductive planes has a second area and a second shape. The first area and the second area are about the same and the first shape and the second shape are about the same. An insulating structure is disposed between the first electrode and the second electrodes. The first vertical conductive structures and the second vertical conductive structures are interlaced with each other. The capacitors share the bottom conductive plane and have separate top conductive planes.
    • 电容器结构包括至少两个电容器。 第一电极包括底部导电平面和第一垂直导电结构。 底部导电平面设置在衬底上。 底部导电平面具有第一区域和第一形状。 至少两个第二电极包括顶部导电平面和第二垂直导电结构。 顶部导电平面的组合区域和相邻顶部导电平面之间的间隙区域具有第二区域和第二形状。 第一区域和第二区域大致相同,第一形状和第二形状大致相同。 绝缘结构设置在第一电极和第二电极之间。 第一垂直导电结构和第二垂直导电结构彼此交错。 电容器共享底部导电平面并具有单独的顶部导电平面。