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1. 发明授权

US09233839B2 MEMS device and method of forming the same 有权
标题翻译： MEMS器件及其形成方法
公开(公告)号：US09233839B2
公开(公告)日：2016-01-12
申请号：US13956457
申请日：2013-08-01
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Yu-Chia Liu , Chia-Hua Chu , Jung-Huei Peng , Kuei-Sung Chang , Chun-Wen Cheng
IPC分类号： B81B3/00 , B81B7/02
CPC分类号： B81B7/02 , B81C2203/0714
摘要： A method for forming a MEMS device is provided. The method includes the following steps of providing a substrate having a first portion and a second portion; fabricating a membrane type sensor on the first portion of the substrate; and fabricating a bulk silicon sensor on the second portion of the substrate.
摘要翻译：提供了一种用于形成MEMS器件的方法。该方法包括以下步骤：提供具有第一部分和第二部分的基底; 在所述基板的第一部分上制造膜型传感器; 以及在所述衬底的第二部分上制造体硅传感器。

2. 发明申请

US20150251900A1 SEMICONDUCTOR ARRANGEMENT WITH STRESS RELEASE CONFIGURATION 有权
标题翻译：半导体布置与应力释放配置
公开(公告)号：US20150251900A1
公开(公告)日：2015-09-10
申请号：US14200075
申请日：2014-03-07
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Chun-Wen Cheng , Chia-Hua Chu , Yi-Chuan Teng
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： B81B7/0054 , B81B7/0019 , B81C1/00238 , B81C2203/0785 , H01L2924/1461
摘要： Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided herein. A semiconductor arrangement comprises a cap wafer, a microelectromechanical systems (MEMS) wafer, and a complementary metal-oxide-semiconductor (CMOS) wafer. The cap wafer comprises a first spring structure and the MEMS wafer comprises a second spring structure. The first spring structure and the second spring structure relieve stress as portions of the semiconductor arrangement, such as a membrane and a poly layer, move. An ambient pressure chamber is formed between the CMOS wafer and the MEMS wafer as a thermal insulation air gap to protect the MEMS wafer from heat originating from the CMOS wafer. The ambient pressure chamber is connected to ambient air, such as for CMOS outgassing relief.
摘要翻译：除此之外，本文提供了一种或多种用于形成这种半导体布置的半导体布置和技术。半导体装置包括盖晶片，微机电系统（MEMS）晶片和互补金属氧化物半导体（CMOS）晶片。盖晶片包括第一弹簧结构，并且MEMS晶片包括第二弹簧结构。第一弹簧结构和第二弹簧结构缓和应力，因为诸如膜和多层的半导体装置的部分移动。在CMOS晶片和MEMS晶片之间形成环境压力室作为绝热气隙，以保护MEMS晶片免受来自CMOS晶片的热量的影响。环境压力室连接到环境空气，例如用于CMOS除气释放。

3. 发明授权

US10155214B2 Getter, MEMS device and method of forming the same 有权
公开(公告)号：US10155214B2
公开(公告)日：2018-12-18
申请号：US14252835
申请日：2014-04-15
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Chin-Wei Liang , Cheng-Yuan Tsai , Chun-Wen Cheng , Chia-Shiung Tsai
IPC分类号： C22C30/00 , B01J20/02 , B81B7/00 , B01J20/32 , C22C27/02 , C22C16/00 , C22C14/00
摘要： A getter is provided. The getter consists essentially of from about 0% to 50% of titanium, from about 0% to 50% zirconium, and from about 5% to 50% of tantalum. A MEMS device is provided. The MEMS device includes a substrate and a getter over the substrate. The getter consists essentially of from about 0% to 50% of titanium, from about 0% to 50% zirconium, and from about 5% to 50% of tantalum. A method of forming a MEMS device is provided. The method includes the following operations: providing a substrate; and providing a getter over the substrate, wherein the getter consists essentially of from about 0% to 50% of titanium, from about 0% to 50% zirconium, and from about 5% to 50% of tantalum, and wherein all of the percentages are atomic percentages.

4. 发明授权

US08900905B1 MEMS device and method of forming the same 有权
标题翻译： MEMS器件及其形成方法
公开(公告)号：US08900905B1
公开(公告)日：2014-12-02
申请号：US13957491
申请日：2013-08-02
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Yu-Chia Liu , Chia-Hua Chu , Jung-Huei Peng , Kuei-Sung Chang , Chun-Wen Cheng
IPC分类号： H01L21/00 , H01L29/84
CPC分类号： H04R19/005 , B81B7/02 , G01L9/0042 , H04R31/00
摘要： A method for forming a MEMS device is provided. The method includes the following operations of providing a substrate having a first portion and a second portion; fabricating a membrane type sensor on the first portion of the substrate using a double-side process; and fabricating a bulk silicon sensor on the second portion of the substrate.
摘要翻译：提供了一种用于形成MEMS器件的方法。该方法包括提供具有第一部分和第二部分的基底的以下操作; 使用双面工艺在基板的第一部分上制造膜型传感器; 以及在所述衬底的第二部分上制造体硅传感器。

5. 发明授权

US11827513B2 Outgassing material coated cavity for a micro-electro mechanical system device and methods for forming the same 有权
公开(公告)号：US11827513B2
公开(公告)日：2023-11-28
申请号：US17496815
申请日：2021-10-08
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Kuei-Sung Chang , Tai-Bang An , Chun-Wen Cheng , Hung-Hua Lin
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： B81B7/0038 , B81C1/00285 , B81B2207/015 , B81C2203/0136
摘要： A MEMS support structure and a cap structure are provided. At least one vertically-extending trench is formed into the MEMS support structure or a portion of the cap structure. A vertically-extending outgassing material portion having a surface that is physically exposed to a respective vertically-extending cavity is formed in each of the at least one vertically-extending trench. A matrix material layer is attached to the MEMS support structure. A movable element laterally confined within a matrix layer is formed by patterning the matrix material layer. The matrix layer is bonded to the cap structure. A sealed chamber containing the movable element is formed. Each vertically-extending outgassing material portion has a surface that is physically exposed to the sealed chamber, and outgases a gas to increase the pressure in the sealed chamber.

6. 发明申请

US20220024756A1 OUTGASSING MATERIAL COATED CAVITY FOR A MICRO-ELECTRO MECHANICAL SYSTEM DEVICE AND METHODS FOR FORMING THE SAME 有权
公开(公告)号：US20220024756A1
公开(公告)日：2022-01-27
申请号：US17496815
申请日：2021-10-08
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Kuei-Sung CHANG , Tai-Bang An , Chun-Wen Cheng , Hung-Hua Lin
IPC分类号： B81B7/00 , B81C1/00
摘要： A MEMS support structure and a cap structure are provided. At least one vertically-extending trench is formed into the MEMS support structure or a portion of the cap structure. A vertically-extending outgassing material portion having a surface that is physically exposed to a respective vertically-extending cavity is formed in each of the at least one vertically-extending trench. A matrix material layer is attached to the MEMS support structure. A movable element laterally confined within a matrix layer is formed by patterning the matrix material layer. The matrix layer is bonded to the cap structure. A sealed chamber containing the movable element is formed. Each vertically-extending outgassing material portion has a surface that is physically exposed to the sealed chamber, and outgases a gas to increase the pressure in the sealed chamber.

7. 发明授权

US09238578B2 Semiconductor arrangement with stress release and thermal insulation 有权
标题翻译：具有应力释放和绝热的半导体装置
公开(公告)号：US09238578B2
公开(公告)日：2016-01-19
申请号：US14200101
申请日：2014-03-07
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Chun-Wen Cheng , Chia-Hua Chu , Yi-Chuan Teng
IPC分类号： H01L21/00 , B81B7/00 , B81C1/00
CPC分类号： B81B7/0054 , B81B7/0019 , B81B7/008 , B81C1/00238 , B81C1/00269 , B81C1/00325
摘要： Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided herein. A semiconductor arrangement comprises a cap wafer, a microelectromechanical systems (MEMS) wafer, and a complementary metal-oxide-semiconductor (CMOS) wafer. The cap wafer comprises one or more spring structures, such as a first spring structure and a second spring structure. The first spring structure and the second spring structure relieve stress as portions of the semiconductor arrangement, such as a membrane and a poly layer, move. An ambient pressure chamber is formed between the CMOS wafer and the MEMS wafer, such as for CMOS outgassing relief. One or more thermal insulator structures are formed between the CMOS wafer and the MEMS wafer to protect the MEMS wafer from heat originating from the CMOS wafer.
摘要翻译：除此之外，本文提供了一种或多种用于形成这种半导体布置的半导体布置和技术。半导体装置包括盖晶片，微机电系统（MEMS）晶片和互补金属氧化物半导体（CMOS）晶片。盖片包括一个或多个弹簧结构，例如第一弹簧结构和第二弹簧结构。第一弹簧结构和第二弹簧结构缓和应力，因为诸如膜和多层的半导体装置的部分移动。在CMOS晶片和MEMS晶片之间形成环境压力室，例如用于CMOS去除放电。在CMOS晶片和MEMS晶片之间形成一个或多个热绝缘体结构，以保护MEMS晶片不受来自CMOS晶片的热量的影响。

8. 发明申请

US20150251901A1 SEMICONDUCTOR ARRANGEMENT WITH STRESS RELEASE AND THERMAL INSULATION 有权
标题翻译：半导体布置与应力释放和热绝缘
公开(公告)号：US20150251901A1
公开(公告)日：2015-09-10
申请号：US14200101
申请日：2014-03-07
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Chun-Wen Cheng , Chia-Hua Chu , Yi-Chuan Teng
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： B81B7/0054 , B81B7/0019 , B81B7/008 , B81C1/00238 , B81C1/00269 , B81C1/00325
摘要： Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided herein. A semiconductor arrangement comprises a cap wafer, a microelectromechanical systems (MEMS) wafer, and a complementary metal-oxide-semiconductor (CMOS) wafer. The cap wafer comprises one or more spring structures, such as a first spring structure and a second spring structure. The first spring structure and the second spring structure relieve stress as portions of the semiconductor arrangement, such as a membrane and a poly layer, move. An ambient pressure chamber is formed between the CMOS wafer and the MEMS wafer, such as for CMOS outgassing relief. One or more thermal insulator structures are formed between the CMOS wafer and the MEMS wafer to protect the MEMS wafer from heat originating from the CMOS wafer.
摘要翻译：除此之外，本文提供了一种或多种用于形成这种半导体布置的半导体布置和技术。半导体装置包括盖晶片，微机电系统（MEMS）晶片和互补金属氧化物半导体（CMOS）晶片。盖片包括一个或多个弹簧结构，例如第一弹簧结构和第二弹簧结构。第一弹簧结构和第二弹簧结构缓和应力，因为诸如膜和多层的半导体装置的部分移动。在CMOS晶片和MEMS晶片之间形成环境压力室，例如用于CMOS去除放电。在CMOS晶片和MEMS晶片之间形成一个或多个热绝缘体结构，以保护MEMS晶片不受来自CMOS晶片的热量的影响。

9. 发明公开

US20230365398A1 OUTGASSING MATERIAL COATED CAVITY FOR A MICRO-ELECTRO MECHANICAL SYSTEM DEVICE AND METHODS FOR FORMING THE SAME 审中-公开
公开(公告)号：US20230365398A1
公开(公告)日：2023-11-16
申请号：US18358175
申请日：2023-07-25
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Kuei-Sung Chang , Tai-Bang An , Chun-Wen Cheng , Hung-Hua Lin
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： B81B7/0038 , B81C1/00285 , B81C2203/0136 , B81B2207/015
摘要： A MEMS support structure and a cap structure are provided. At least one vertically-extending trench is formed into the MEMS support structure or a portion of the cap structure. A vertically-extending outgassing material portion having a surface that is physically exposed to a respective vertically-extending cavity is formed in each of the at least one vertically-extending trench. A matrix material layer is attached to the MEMS support structure. A movable element laterally confined within a matrix layer is formed by patterning the matrix material layer. The matrix layer is bonded to the cap structure. A sealed chamber containing the movable element is formed. Each vertically-extending outgassing material portion has a surface that is physically exposed to the sealed chamber, and outgases a gas to increase the pressure in the sealed chamber.

10. 发明授权

US09114976B1 Semiconductor arrangement with stress release configuration 有权
标题翻译：半导体布置与应力释放配置
公开(公告)号：US09114976B1
公开(公告)日：2015-08-25
申请号：US14200075
申请日：2014-03-07
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Chun-Wen Cheng , Chia-Hua Chu , Yi-Chuan Teng
IPC分类号： H01L21/00 , B81B7/00 , B81C1/00
CPC分类号： B81B7/0054 , B81B7/0019 , B81C1/00238 , B81C2203/0785 , H01L2924/1461
摘要： Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided herein. A semiconductor arrangement comprises a cap wafer, a microelectromechanical systems (MEMS) wafer, and a complementary metal-oxide-semiconductor (CMOS) wafer. The cap wafer comprises a first spring structure and the MEMS wafer comprises a second spring structure. The first spring structure and the second spring structure relieve stress as portions of the semiconductor arrangement, such as a membrane and a poly layer, move. An ambient pressure chamber is formed between the CMOS wafer and the MEMS wafer as a thermal insulation air gap to protect the MEMS wafer from heat originating from the CMOS wafer. The ambient pressure chamber is connected to ambient air, such as for CMOS outgassing relief.
摘要翻译：除此之外，本文提供了一种或多种用于形成这种半导体布置的半导体布置和技术。半导体装置包括盖晶片，微机电系统（MEMS）晶片和互补金属氧化物半导体（CMOS）晶片。盖晶片包括第一弹簧结构，并且MEMS晶片包括第二弹簧结构。第一弹簧结构和第二弹簧结构缓和应力，因为诸如膜和多层的半导体装置的部分移动。在CMOS晶片和MEMS晶片之间形成环境压力室作为绝热气隙，以保护MEMS晶片免受来自CMOS晶片的热量的影响。环境压力室连接到环境空气，例如用于CMOS除气释放。

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