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    • 2. 发明申请
    • MEMORY CONTROL DEVICE, STORAGE DEVICE, AND MEMORY CONTROL METHOD
    • 存储控制装置,存储装置和存储器控制方法
    • US20120102262A1
    • 2012-04-26
    • US13205193
    • 2011-08-08
    • Takahiro NANGOHiroyuki MOROTohru FUKUDA
    • Takahiro NANGOHiroyuki MOROTohru FUKUDA
    • G06F12/00
    • G06F13/1642G06F3/0656G11B20/18
    • According to one embodiment, a memory control device includes: queues in channels; first controller; generator; and second controller. The queues hold write commands for data pieces. The first controller causes: (i) when a read command is received, and until the write commands are held in the queues, the channels are synchronized with each other, and processes of the write commands become ready to be performed, a read process based on the read command prior to the write commands; and, (ii) when the processes of write commands become ready to be performed, synchronization of the channels and write processes for the data pieces based on the write commands. The generator generates error correction codes based on the data pieces when the channels are synchronized with each other and the processes based on the write commands are performed. The second controller writes the error correction codes on the storage medium.
    • 根据一个实施例,存储器控制装置包括:通道中的队列; 第一控制器 发电机; 和第二控制器。 队列保存数据的写入命令。 第一控制器导致:(i)当接收到读命令时,直到写入命令保持在队列中,通道彼此同步,写入命令的处理准备好执行,基于读取过程 在写命令之前的read命令; 和(ii)当写入命令的处理准备好执行时,基于写入命令的数据段的通道同步和写入处理。 当通道彼此同步时,发生器基于数据段产生纠错码,并且执行基于写入命令的处理。 第二个控制器将错误校正码写入存储介质。