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1. 发明授权

US07763500B2 Method for manufacturing semiconductor storage device comprising a slow cooling step 失效
标题翻译：一种制造半导体存储装置的方法，包括缓慢冷却步骤
公开(公告)号：US07763500B2
公开(公告)日：2010-07-27
申请号：US11498129
申请日：2006-08-03
申请人： Takashi Arao , Kenichi Koyanagi , Kenji Komeda , Naruhiko Nakanishi , Hideki Gomi
发明人： Takashi Arao , Kenichi Koyanagi , Kenji Komeda , Naruhiko Nakanishi , Hideki Gomi
IPC分类号： H01L21/335 , H01L21/8232
CPC分类号： H01L28/40 , H01L27/10852 , H01L28/84
摘要： First, a base structure provided with the main parts of a memory cell is prepared, and a lower electrode comprising a polycrystalline silicon film is thereafter formed on the base structure. Next, the surface of the lower electrode is thermally nitrided at a predetermined temperature to form a silicon nitride film. In the thermal nitridation of the lower electrode, the temperature is increased to a predetermined nitriding temperature, after which the temperature is reduced at a rate that is more gradual than usual. Aluminum oxide (Al2O3) or another metal oxide dielectric film is thereafter formed as the capacitive insulating film on the lower electrode, and an upper electrode is formed on the capacitive insulating film.
摘要翻译：首先，准备设置有存储单元的主要部分的基底结构，然后在基底结构上形成包括多晶硅膜的下部电极。接下来，将下电极的表面在预定温度下热氮化，以形成氮化硅膜。在下电极的热氮化中，将温度升高到预定的氮化温度，之后以比通常更渐进的速度降低温度。此后，在下电极上形成作为电容绝缘膜的氧化铝（Al2O3）或其他金属氧化物电介质膜，在电容绝缘膜上形成上电极。

2. 发明申请

US20070032034A1 Method for manufacturing semiconductor storage device 失效
标题翻译：半导体存储装置的制造方法
公开(公告)号：US20070032034A1
公开(公告)日：2007-02-08
申请号：US11498129
申请日：2006-08-03
申请人： Takashi Arao , Kenichi Koyanagi , Kenji Komeda , Naruhiko Nakanishi , Hideki Gomi
发明人： Takashi Arao , Kenichi Koyanagi , Kenji Komeda , Naruhiko Nakanishi , Hideki Gomi
IPC分类号： H01L21/20
CPC分类号： H01L28/40 , H01L27/10852 , H01L28/84
摘要： First, a base structure provided with the main parts of a memory cell is prepared, and a lower electrode comprising a polycrystalline silicon film is thereafter formed on the base structure. Next, the surface of the lower electrode is thermally nitrided at a predetermined temperature to form a silicon nitride film. In the thermal nitridation of the lower electrode, the temperature is increased to a predetermined nitriding temperature, after which the temperature is reduced at a rate that is more gradual than usual. Aluminum oxide (Al2O3) or another metal oxide dielectric film is thereafter formed as the capacitive insulating film on the lower electrode, and an upper electrode is formed on the capacitive insulating film.
摘要翻译：首先，准备设置有存储单元的主要部分的基底结构，然后在基底结构上形成包括多晶硅膜的下部电极。接下来，将下电极的表面在预定温度下热氮化，以形成氮化硅膜。在下电极的热氮化中，将温度升高到预定的氮化温度，之后以比通常更渐进的速度降低温度。然后在下电极上形成氧化铝（Al 2 O 3 3）或其它金属氧化物电介质膜作为电容绝缘膜，并且上电极形成在电容绝缘膜。

3. 发明申请

US20110027963A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110027963A1
公开(公告)日：2011-02-03
申请号：US12846305
申请日：2010-07-29
申请人： Kenji Komeda
发明人： Kenji Komeda
IPC分类号： H01L21/02
CPC分类号： H01L28/87 , H01L27/10814 , H01L27/10817 , H01L27/10852 , H01L28/91
摘要： A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first insulating film is formed over a substrate. A second insulating film is formed on the first insulating film. An electrode penetrating the first and the second insulating films is formed. A part of the second insulating film and a part of the electrode are removed so that a first hole is formed in the second insulating film. A first portion of the electrode is exposed through the first hole. A part of the first portion of the electrode is removed by an isotropic etching.
摘要翻译：制造半导体器件的方法可以包括但不限于以下处理。在衬底上形成第一绝缘膜。在第一绝缘膜上形成第二绝缘膜。形成穿透第一绝缘膜和第二绝缘膜的电极。去除第二绝缘膜的一部分和电极的一部分，使得在第二绝缘膜中形成第一孔。电极的第一部分通过第一孔露出。通过各向同性蚀刻去除电极的第一部分的一部分。

4. 发明授权

US08188529B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08188529B2
公开(公告)日：2012-05-29
申请号：US12318735
申请日：2009-01-07
申请人： Yoshitaka Nakamura , Kenji Komeda , Ryota Suewaka , Noriaki Ikeda
发明人： Yoshitaka Nakamura , Kenji Komeda , Ryota Suewaka , Noriaki Ikeda
IPC分类号： H01L27/108
CPC分类号： H01L28/91 , H01L27/0207 , H01L27/10817 , H01L27/10894 , H01L29/78
摘要： A semiconductor device comprises a memory cell region, a peripheral circuit region and a boundary region. In the memory cell region, a concave lower electrode and a foundation layer have a same uppermost surface positioned in a height of H above the plane-A. In the boundary region, one concave lower conductive region and a foundation layer have a same uppermost surface positioned in a height of H above the plane-A.
摘要翻译：半导体器件包括存储单元区域，外围电路区域和边界区域。在存储单元区域中，凹下电极和基底层具有位于平面A上方的高度H的相同的最上表面。在边界区域中，一个凹下导电区域和基础层具有位于平面A上方的高度H的相同的最上表面。

5. 发明申请

US20080176412A1 Atomic layer deposition system including a plurality of exhaust tubes 审中-公开
标题翻译：原子层沉积系统包括多个排气管
公开(公告)号：US20080176412A1
公开(公告)日：2008-07-24
申请号：US12010149
申请日：2008-01-22
申请人： Kenji Komeda
发明人： Kenji Komeda
IPC分类号： H01L21/31 , B05C11/00
CPC分类号： C23C16/4412 , C23C16/45527
摘要： An atomic layer deposition system includes a reaction chamber, a plurality of exhaust tubes communicated to the reaction chamber, a plurality of first vacuum gauges for monitoring the degree of vacuum of the respective exhaust tubes, a second vacuum gauge for monitoring the degree of vacuum of the reaction chamber, and control valves for adjusting the exhaust volume of the exhaust tubes independently of one another. The control valves are controlled based on the pressures measured by the first and second control valves for achieving a uniform flow of the vapor phase reactant.
摘要翻译：原子层沉积系统包括反应室，与反应室连通的多个排气管，多个第一真空计，用于监测各个排气管的真空度;第二个真空计，用于监测真空度反应室和用于独立地调节排气管的排气量的控制阀。基于由第一和第二控制阀测量的压力来控制控制阀，以实现气相反应物的均匀流动。

6. 发明申请

US20070173028A1 Method of forming dielectric film and capacitor manufacturing method using the same 失效
标题翻译：形成介电膜的方法及使用其的电容器制造方法
公开(公告)号：US20070173028A1
公开(公告)日：2007-07-26
申请号：US11657022
申请日：2007-01-24
申请人： Kenji Komeda
发明人： Kenji Komeda
IPC分类号： H01L21/20
CPC分类号： H01L28/84 , H01L21/02178 , H01L21/0228 , H01L21/02304 , H01L21/3141 , H01L21/31616 , H01L27/10852 , H01L28/91
摘要： In a method of manufacturing a capacitor, a lower electrode of a capacitor is formed on or above a semiconductor substrate. An ozone gas and an inert gas are simultaneously introduced for a predetermined period into a reaction chamber of an atomic layer deposition apparatus in which the semiconductor substrate is set. Then, the ozone gas is exhausted from the reaction chamber by stopping the introduction of the ozone gas and introducing only the inert gas into the reaction chamber, after the introduction. A capacitive dielectric film is formed on the lower electrode by an atomic layer deposition (ALD) method in the atom layer deposition apparatus. An upper electrode of the capacitor is formed on the capacitive dielectric film after the capacitive dielectric film is formed.
摘要翻译：在制造电容器的方法中，在半导体衬底上或上方形成电容器的下电极。将臭氧气体和惰性气体同时引入到其中设置半导体衬底的原子层沉积设备的反应室中。然后，在引入之后，通过停止引入臭氧气体并仅将惰性气体引入反应室，从反应室排出臭氧气体。在原子层沉积装置中通过原子层沉积（ALD）方法在下电极上形成电容性电介质膜。在形成电容电介质膜之后，在电容电介质膜上形成电容器的上电极。

7. 发明授权

US08586430B2 Method of forming dielectric film and capacitor manufacturing method using the same 失效
标题翻译：形成介电膜的方法及使用其的电容器制造方法
公开(公告)号：US08586430B2
公开(公告)日：2013-11-19
申请号：US11657022
申请日：2007-01-24
申请人： Kenji Komeda
发明人： Kenji Komeda
IPC分类号： H01L21/8242
CPC分类号： H01L28/84 , H01L21/02178 , H01L21/0228 , H01L21/02304 , H01L21/3141 , H01L21/31616 , H01L27/10852 , H01L28/91
摘要： In a method of manufacturing a capacitor, a lower electrode of a capacitor is formed on or above a semiconductor substrate. An ozone gas and an inert gas are simultaneously introduced for a predetermined period into a reaction chamber of an atomic layer deposition apparatus in which the semiconductor substrate is set. Then, the ozone gas is exhausted from the reaction chamber by stopping the introduction of the ozone gas and introducing only the inert gas into the reaction chamber, after the introduction. A capacitive dielectric film is formed on the lower electrode by an atomic layer deposition (ALD) method in the atom layer deposition apparatus. An upper electrode of the capacitor is formed on the capacitive dielectric film after the capacitive dielectric film is formed.
摘要翻译：在制造电容器的方法中，在半导体衬底上或上方形成电容器的下电极。将臭氧气体和惰性气体同时引入到其中设置半导体衬底的原子层沉积设备的反应室中。然后，在引入之后，通过停止引入臭氧气体并仅将惰性气体引入反应室，从反应室排出臭氧气体。在原子层沉积装置中通过原子层沉积（ALD）方法在下电极上形成电容性电介质膜。在形成电容电介质膜之后，在电容电介质膜上形成电容器的上电极。

8. 发明授权

US08124493B2 Method of manufacturing a semiconductor device having an electrode exposed through a hole 有权
标题翻译：制造具有通过孔露出的电极的半导体器件的方法
公开(公告)号：US08124493B2
公开(公告)日：2012-02-28
申请号：US12846305
申请日：2010-07-29
申请人： Kenji Komeda
发明人： Kenji Komeda
IPC分类号： H01L21/20 , H01L21/311
CPC分类号： H01L28/87 , H01L27/10814 , H01L27/10817 , H01L27/10852 , H01L28/91
摘要： A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first insulating film is formed over a substrate. A second insulating film is formed on the first insulating film. An electrode penetrating the first and the second insulating films is formed. A part of the second insulating film and a part of the electrode are removed so that a first hole is formed in the second insulating film. A first portion of the electrode is exposed through the first hole. A part of the first portion of the electrode is removed by an isotropic etching.
摘要翻译：制造半导体器件的方法可以包括但不限于以下处理。在衬底上形成第一绝缘膜。在第一绝缘膜上形成第二绝缘膜。形成穿透第一绝缘膜和第二绝缘膜的电极。去除第二绝缘膜的一部分和电极的一部分，使得在第二绝缘膜中形成第一孔。电极的第一部分通过第一孔露出。通过各向同性蚀刻去除电极的第一部分的一部分。

9. 发明申请

US20090263968A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20090263968A1
公开(公告)日：2009-10-22
申请号：US12421929
申请日：2009-04-10
申请人： Kenji Komeda
发明人： Kenji Komeda
IPC分类号： H01L21/44
CPC分类号： H01L28/91 , H01L21/02087 , H01L27/10852 , H01L27/10894
摘要： A method of fabricating a semiconductor device includes: forming a conductive film over a semiconductor wafer; forming a mask film over the conductive film; removing a portion of the mask film covering at least a peripheral portion of the semiconductor wafer such that a portion of the mask film covering a device forming region of the semiconductor wafer remains; and removing an exposed portion of the conductive film with use of the remaining portion of the mask film as a mask.
摘要翻译：制造半导体器件的方法包括：在半导体晶片上形成导电膜; 在导电膜上形成掩模膜; 去除覆盖半导体晶片的至少周边部分的掩模膜的一部分，使得覆盖半导体晶片的器件形成区域的掩模膜的一部分残留; 并且使用掩模膜的剩余部分作为掩模去除导电膜的暴露部分。

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