专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090098473A1 Photomask, method of lithography, and method for manufacturing the photomask 失效
标题翻译：光掩模，光刻方法和制造光掩模的方法
公开(公告)号：US20090098473A1
公开(公告)日：2009-04-16
申请号：US12314404
申请日：2008-12-10
申请人： Takashi Sato , Takashi Sakamoto
发明人： Takashi Sato , Takashi Sakamoto
IPC分类号： G03F7/20
CPC分类号： G03F7/70641 , B64D47/08 , G03F1/32
摘要： A photomask has a monitoring pattern configured to obtain information required for adjusting optical system of a projection lithography tool. The monitoring pattern encompasses a mask substrate and an asymmetrical diffraction grating delineated on the mask substrate, configured to generate a positive first order diffracted light and a negative first order diffracted light in different diffraction efficiencies. The asymmetrical diffraction grating includes a plurality of probing-phase shifters, disposed periodically on the mask substrate in parallel, and a plurality of opaque strips disposed on light-shielding faces of the probing-phase shifters. An asymmetrically recessed ridge implements each of the probing-phase shifters.
摘要翻译：光掩模具有被配置为获得调整投影光刻工具的光学系统所需的信息的监视图案。监测图案包括掩模基板和掩模基板上描绘的非对称衍射光栅，被配置为产生不同衍射效率的正一级衍射光和负一级衍射光。不对称衍射光栅包括平行地周期性地设置在掩模基板上的多个探测移相器，以及设置在探测移相器的光屏蔽面上的多个不透明条。不对称凹入的脊部实现每个探测移相器。

2. 发明授权

US07100146B2 Design system of alignment marks for semiconductor manufacture 有权
标题翻译：半导体制造对准标记设计系统
公开(公告)号：US07100146B2
公开(公告)日：2006-08-29
申请号：US10636577
申请日：2003-08-08
申请人： Takashi Sato , Takuya Kouno , Takashi Sakamoto , Yoshiyuki Shioyama , Tatsuhiko Higashiki , Ichiro Mori , Noboru Yokoya
发明人： Takashi Sato , Takuya Kouno , Takashi Sakamoto , Yoshiyuki Shioyama , Tatsuhiko Higashiki , Ichiro Mori , Noboru Yokoya
IPC分类号： G06F17/50
CPC分类号： G03F9/7092
摘要： A design system of an alignment mark for manufacturing a semiconductor device includes a memory which stores at least mark data including pattern information regarding plural kinds of marks and process data including condition information of manufacturing processes, and a first process simulator which simulates a substrate structure before patterning based on the process data, the substrate structure being formed in an identified manufacturing process. Moreover, the design system includes a second process simulator which simulates a processed shape of an identified mark after the patterning based on the simulated substrate structure and the process data, the mark formed in the manufacturing process, a signal waveform simulator which simulates a detection signal waveform of the mark, the waveform being obtained from the simulated processed shape of the mark, and a signal evaluation device which evaluates a suitability of the mark for the identified manufacturing process based on the simulated detection signal waveform.
摘要翻译：用于制造半导体器件的对准标记的设计系统包括：存储器，其至少存储包括关于多种标记的图案信息的标记数据和包括制造过程的条件信息的处理数据;以及第一处理模拟器，其模拟前面的衬底结构基于工艺数据构图，基板结构在识别的制造工艺中形成。此外，设计系统包括第二处理模拟器，其基于模拟的基板结构和处理数据，在制造过程中形成的标记，模拟检测信号的信号波形模拟器，模拟图案化之后的识别标记的处理形状标记的波形，从标记的模拟处理形状获得的波形，以及基于模拟的检测信号波形来评估用于所识别的制造处理的标记的适合性的信号评估装置。

3. 发明申请

US20050112475A1 Photomask, method of lithography, and method for manufacturing the photomask 失效
标题翻译：光掩模，光刻方法和制造光掩模的方法
公开(公告)号：US20050112475A1
公开(公告)日：2005-05-26
申请号：US10927320
申请日：2004-08-27
申请人： Takashi Sato , Takashi Sakamoto
发明人： Takashi Sato , Takashi Sakamoto
IPC分类号： G03B15/00 , B64D47/08 , F16M11/04 , F16M13/02 , G01B11/00 , G01B11/25 , G01M11/02 , G02F1/01 , G03B17/56 , G03C5/00 , G03F1/26 , G03F1/32 , G03F1/42 , G03F1/68 , G03F7/027 , G03F7/20 , G03F7/207 , G03F9/00 , G06K9/00 , G21K5/00 , H01L21/027 , H04N5/222
CPC分类号： G03F7/70641 , B64D47/08 , G03F1/32
摘要： A photomask has a monitoring pattern configured to obtain information required for adjusting optical system of a projection lithography tool. The monitoring pattern encompasses a mask substrate and an asymmetrical diffraction grating delineated on the mask substrate, configured to generate a positive first order diffracted light and a negative first order diffracted light in different diffraction efficiencies. The asymmetrical diffraction grating includes a plurality of probing-phase shifters, disposed periodically on the mask substrate in parallel, and a plurality of opaque strips disposed on light-shielding faces of the probing-phase shifters. An asymmetrically recessed ridge implements each of the probing-phase shifters.
摘要翻译：光掩模具有被配置为获得调整投影光刻工具的光学系统所需的信息的监视图案。监测图案包括掩模基板和掩模基板上描绘的非对称衍射光栅，被配置为产生不同衍射效率的正一级衍射光和负一级衍射光。不对称衍射光栅包括平行地周期性地设置在掩模基板上的多个探测移相器，以及设置在探测移相器的光屏蔽面上的多个不透明条。不对称凹入的脊部实现每个探测移相器。

4. 发明授权

US08068213B2 Photomask, method of lithography, and method for manufacturing the photomask 失效
标题翻译：光掩模，光刻方法和制造光掩模的方法
公开(公告)号：US08068213B2
公开(公告)日：2011-11-29
申请号：US12314404
申请日：2008-12-10
申请人： Takashi Sato , Takashi Sakamoto
发明人： Takashi Sato , Takashi Sakamoto
IPC分类号： G03B27/32 , G03C5/00
CPC分类号： G03F7/70641 , B64D47/08 , G03F1/32
摘要： A photomask has a monitoring pattern configured to obtain information required for adjusting optical system of a projection lithography tool. The monitoring pattern encompasses a mask substrate and an asymmetrical diffraction grating delineated on the mask substrate, configured to generate a positive first order diffracted light and a negative first order diffracted light in different diffraction efficiencies. The asymmetrical diffraction grating includes a plurality of probing-phase shifters, disposed periodically on the mask substrate in parallel, and a plurality of opaque strips disposed on light-shielding faces of the probing-phase shifters. An asymmetrically recessed ridge implements each of the probing-phase shifters.
摘要翻译：光掩模具有被配置为获得调整投影光刻工具的光学系统所需的信息的监视图案。监测图案包括掩模基板和掩模基板上描绘的非对称衍射光栅，被配置为产生不同衍射效率的正一级衍射光和负一级衍射光。不对称衍射光栅包括平行地周期性地设置在掩模基板上的多个探测移相器，以及设置在探测移相器的光屏蔽面上的多个不透明条。不对称凹入的脊部实现每个探测移相器。

5. 发明授权

US06701512B2 Focus monitoring method, exposure apparatus, and exposure mask 失效
标题翻译：聚焦监测方法，曝光装置和曝光掩模
公开(公告)号：US06701512B2
公开(公告)日：2004-03-02
申请号：US10052527
申请日：2002-01-23
申请人： Takumichi Sutani , Tadahito Fujisawa , Takashi Sato , Takashi Sakamoto , Masafumi Asano , Soichi Inoue
发明人： Takumichi Sutani , Tadahito Fujisawa , Takashi Sato , Takashi Sakamoto , Masafumi Asano , Soichi Inoue
IPC分类号： G06F1750
CPC分类号： G03F7/70641
摘要： According to a focus monitoring method, an exposure mask on which a focus monitor pattern comprising at least two types of pattern groups is formed is prepared. A pattern group A of the at least two pattern groups is illuminated with illumination light while a barycenter of an illumination light source of illumination optics is in an off-axis state. At least a pattern group B of the at least two pattern groups is illuminated with illumination light while the barycenter of the illumination light source is in an on-axis state. A positional deviation between the pattern groups A and B transferred onto a substrate is measured. An effective focus position can be monitored from this positional deviation.
摘要翻译：根据聚焦监视方法，准备形成包括至少两种图案组的聚焦监视器图案的曝光掩模。所述至少两个图案组中的图案组A被照明光照射，而照明光学器件的照明光源的重心处于离轴状态。至少两个图案组中的图案组B至少被照明光照射，同时照明光源的重心处于轴上状态。测量转印到基板上的图案组A和B之间的位置偏差。可以从该位置偏差来监视有效的对焦位置。

6. 发明授权

US07482102B2 Photomask having a monitoring pattern with an asymmetrical diffraction grating that includes semi-transparent probing-phase shifters 失效
$Photomask having a monitoring pattern with an asymmetrical diffraction grating that includes semi-transparent probing-phase shifters$
标题翻译：具有包含半透明探测移相器的不对称衍射光栅的监视图案的光掩模
公开(公告)号：US07482102B2
公开(公告)日：2009-01-27
申请号：US10927320
申请日：2004-08-27
申请人： Takashi Sato , Takashi Sakamoto
发明人： Takashi Sato , Takashi Sakamoto
IPC分类号： G03F1/00 , G03F1/14
CPC分类号： G03F7/70641 , B64D47/08 , G03F1/32
摘要： A photomask having a monitoring pattern configured to obtain information required for adjusting an optical system of a projection lithography tool. The monitoring pattern encompasses a mask substrate and an asymmetrical diffraction grating delineated on the mask substrate, configured to generate a positive first order diffracted light and a negative first order diffracted light in different diffraction efficiencies. The asymmetrical diffraction grating includes a plurality of probing-phase shifters formed of semi-transparent material, disposed periodically on the mask substrate in parallel, and a plurality of opaque strips disposed on light-shielding faces of the probing-phase shifters. An asymmetrically recessed ridge implements each of the probing-phase shifters.
摘要翻译：具有被配置为获得调整投影光刻工具的光学系统所需的信息的监视图案的光掩模。监测图案包括掩模基板和掩模基板上描绘的非对称衍射光栅，被配置为产生不同衍射效率的正一级衍射光和负一级衍射光。不对称衍射光栅包括多个由半透明材料形成的探测移相器，其平行设置在掩模基板上周期性地设置，并且多个不透明条带设置在探测移相器的遮光面上。不对称凹入的脊部实现每个探测移相器。

7. 发明申请

US20090215247A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20090215247A1
公开(公告)日：2009-08-27
申请号：US12434637
申请日：2009-05-02
申请人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
发明人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
IPC分类号： H01L21/304
CPC分类号： H01L21/67092 , H01L21/78 , H01L2224/06181 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.
摘要翻译：在扫描装置（1）的盖（8）的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置（7a）和（7b）。在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上晶片通过照明装置（7a）和（7b）。此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

8. 发明授权

US07998793B2 Light illumination during wafer dicing to prevent aluminum corrosion 有权
标题翻译：晶圆切割时的光照，防止铝腐蚀
公开(公告)号：US07998793B2
公开(公告)日：2011-08-16
申请号：US12434637
申请日：2009-05-02
申请人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
发明人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
IPC分类号： H01L21/00
CPC分类号： H01L21/67092 , H01L21/78 , H01L2224/06181 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.
摘要翻译：在切割装置（1）的盖（8）的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置（7a）和（7b）。在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上晶片通过照明装置（7a）和（7b）。此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

9. 发明申请

US20080138962A1 Manufacturing Method of Semiconductor Device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：US20080138962A1
公开(公告)日：2008-06-12
申请号：US11632993
申请日：2004-07-22
申请人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
发明人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
IPC分类号： H01L21/304
CPC分类号： H01L21/67092 , H01L21/78 , H01L2224/06181 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.
摘要翻译：在切割装置（1）的盖（8）的前表面和后表面上布置照射具有1.1μm或更小的波长的光的照明装置（7a）和（7b）。在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上通过照明装置（7a）和（7b）的晶片。此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

10. 发明授权

US10026968B2 Method for producing fuel cell electrode catalyst 有权
公开(公告)号：US10026968B2
公开(公告)日：2018-07-17
申请号：US14000569
申请日：2012-01-04
申请人： Masaki Horikita , Kunchan Lee , Yasuaki Wakizaka , Takashi Sato
发明人： Masaki Horikita , Kunchan Lee , Yasuaki Wakizaka , Takashi Sato
IPC分类号： H01M4/88 , H01M4/90 , H01M8/1018
CPC分类号： H01M4/8882 , H01M4/8825 , H01M4/9008 , H01M4/9016 , H01M4/9083 , H01M2008/1095
摘要： A method for producing a fuel cell electrode catalyst, including a step (I) of bringing an aqueous solution of a transition metal compound (1) into contact with ammonia and/or ammonia water to generate a precipitate (A) containing an atom of the transition metal, a step (II) of mixing at least the precipitate (A), an organic compound (B), and a liquid medium (C) to obtain a catalyst precursor liquid, and a step (IV) of subjecting the solid in the catalyst precursor liquid to heat treatment at a temperature of 500 to 1200° C. to obtain an electrode catalyst; a portion or the entirety of the transition metal compound (1) being a compound containing a transition metal element of group 4 or group 5 of the periodic table; and the organic compound (B) being at least one selected from sugars and the like.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式