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1. 发明授权

US08120942B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US08120942B2
公开(公告)日：2012-02-21
申请号：US12559931
申请日：2009-09-15
申请人： Takeshi Yamaguchi , Mariko Hayashi , Hirofumi Inoue , Takeshi Araki , Koichi Kubo
发明人： Takeshi Yamaguchi , Mariko Hayashi , Hirofumi Inoue , Takeshi Araki , Koichi Kubo
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C13/0069 , G11C2013/009 , G11C2213/32 , G11C2213/33 , G11C2213/71 , G11C2213/72 , H01L27/101 , H01L27/1021
摘要： A memory array includes a memory cell, the memory cell being disposed between a first line and a second line and being configured by a variable resistor and a rectifier connected in series. The variable resistor is a mixture of silicon oxide (SiO2) and a transition metal oxide, a proportion of the transition metal oxide being set to 55˜80%.
摘要翻译：存储器阵列包括存储器单元，存储单元设置在第一线路和第二线路之间，并且由可变电阻器和串联连接的整流器构成。可变电阻器是氧化硅（SiO 2）和过渡金属氧化物的混合物，过渡金属氧化物的比例设定为55〜80％。

2. 发明授权

US08698228B2 Non-volatile memory device and method for manufacturing the same 失效
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US08698228B2
公开(公告)日：2014-04-15
申请号：US12886202
申请日：2010-09-20
申请人： Takeshi Araki , Takeshi Yamaguchi , Mariko Hayashi , Kohichi Kubo , Takayuki Tsukamoto
发明人： Takeshi Araki , Takeshi Yamaguchi , Mariko Hayashi , Kohichi Kubo , Takayuki Tsukamoto
IPC分类号： H01L29/792
CPC分类号： H01L27/101 , B82Y10/00 , G11B5/743 , G11B9/04 , G11B9/1472 , G11B9/149 , G11C11/22 , G11C13/0007 , G11C2213/56 , G11C2213/71 , G11C2213/77 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1625 , H01L45/1675
摘要： According to one embodiment, a non-volatile memory device includes a stacked structure and a voltage application portion. The stacked structure includes a memory portion, and an electrode stacked with the memory portion and having a surface having a portion facing the memory portion. The voltage application portion applies a voltage to the memory portion to cause a change in a resistance in the memory portion to store information. The surface includes a first region and a second region. The first region contains at least one of a metallic element, Si, Ga, and As. The first region is conductive. The second region contains at least one of the metallic element, Si, Ga, and As, and has a content ratio of nonmetallic element higher than a content ratio of nonmetallic element in the first region. At least one of the first region and the second region has an anisotropic shape on the surface.
摘要翻译：根据一个实施例，非易失性存储器件包括堆叠结构和电压施加部分。堆叠结构包括存储部分和与存储器部分堆叠并具有面向存储部分的部分的表面的电极。电压施加部分向存储器部分施加电压以引起存储器部分中的电阻的变化以存储信息。表面包括第一区域和第二区域。第一区域包含金属元素Si，Ga和As中的至少一种。第一个区域是导电的。第二区域包含金属元素Si，Ga和As中的至少一种，并且具有高于第一区域中的非金属元素的含量比的非金属元素的含量比。第一区域和第二区域中的至少一个在表面上具有各向异性的形状。

3. 发明授权

US08410540B2 Non-volatile memory device including a stacked structure and voltage application portion 有权
标题翻译：包括堆叠结构和电压施加部分的非易失性存储器件
公开(公告)号：US08410540B2
公开(公告)日：2013-04-02
申请号：US12886079
申请日：2010-09-20
申请人： Takeshi Araki , Takeshi Yamaguchi , Mariko Hayashi , Kohichi Kubo , Takayuki Tsukamoto
发明人： Takeshi Araki , Takeshi Yamaguchi , Mariko Hayashi , Kohichi Kubo , Takayuki Tsukamoto
IPC分类号： H01L29/792
CPC分类号： G11B9/1472 , B82Y10/00 , G11B5/746 , G11B9/04 , G11B9/149 , G11C13/0007 , G11C2213/56 , G11C2213/71 , G11C2213/77 , H01L27/101 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1625 , H01L45/1675
摘要： According to one embodiment, a non-volatile memory device includes a stacked structure including a memory portion and an electrode having a surface facing the memory portion; and a voltage application portion to apply a voltage to the memory portion to change resistance. The surface includes first and second regions. The first region contains a first nonmetallic element and at least one element of a metallic element, Si, Ga, and As. The second region contains a second nonmetallic element and the at least one element. The second region has a content ratio of the second nonmetallic element higher than that in the first region. A difference in electronegativity between the second nonmetallic element and the at least one element is greater than that between the first nonmetallic element and the at least one element. At least one of the first and second regions has an anisotropic shape.
摘要翻译：根据一个实施例，非易失性存储器件包括堆叠结构，其包括存储器部分和具有面向存储器部分的表面的电极; 以及电压施加部分，用于向存储器部分施加电压以改变电阻。表面包括第一和第二区域。第一区域包含第一非金属元素和金属元素Si，Ga和As的至少一种元素。第二区域包含第二非金属元素和至少一个元素。第二区域的第二非金属元素的含量比率高于第一区域。第二非金属元素与至少一种元素之间的电负性的差异大于第一非金属元素与至少一种元素之间的电负性。第一和第二区域中的至少一个具有各向异性形状。

4. 发明申请

US20090247413A1 OXIDE SUPERCONDUCTOR AND METHOD OF FABRICATING SAME 有权
标题翻译：氧化物超导体及其制造方法
公开(公告)号：US20090247413A1
公开(公告)日：2009-10-01
申请号：US12243087
申请日：2008-10-01
申请人： Mariko Hayashi , Takeshi Araki
发明人： Mariko Hayashi , Takeshi Araki
IPC分类号： H01L39/12 , H01L39/24
CPC分类号： H01L39/143 , H01L39/2425 , H01L39/2451
摘要： An oxide superconductor with superconduction properties being improved by effectively introducing a pinning center thereinto and its fabrication method are disclosed. The superconductor has a high-crystallinity oxide superconductor film which is formed on a substrate with a direction of crystal grain being oriented almost perpendicularly to the substrate and with (100) planes of neighboring crystal grains being oriented to form an oblique angle ranging from 0 to 4 degrees or 86 to 90 degrees. The film has a multilayer structure including a plurality of high-density magnetic field trap layers stacked in almost parallel to the substrate and a low-density magnetic field trap layer sandwiched therebetween. An average grain boundary width of the high-density trap layers in a cross-section horizontal to the substrate is 80 nm or less. The width is less than an average grain boundary width of the low-density trap layer in its cross-section horizontal to the substrate.
摘要翻译：公开了一种通过有效地引入钉扎中心来提高超导性能的氧化物超导体及其制造方法。超导体具有形成在基板上的高结晶度氧化物超导体膜，其中晶体的<001>方向几乎垂直于衬底取向，并且相邻晶粒的（100）面被定向以形成倾斜角度范围从0到4度或86到90度。膜具有多层结构，其包括与基板几乎平行堆叠的多个高密度磁场陷阱层和夹在其间的低密度磁场陷阱层。与衬底水平的横截面中的高密度陷阱层的平均晶界宽度为80nm以下。该宽度小于在垂直于衬底的横截面中的低密度陷阱层的平均晶界宽度。

5. 发明授权

US08124568B2 Oxide superconductor and method of fabricating same 有权
标题翻译：氧化物超导体及其制造方法
公开(公告)号：US08124568B2
公开(公告)日：2012-02-28
申请号：US12243087
申请日：2008-10-01
申请人： Mariko Hayashi , Takeshi Araki
发明人： Mariko Hayashi , Takeshi Araki
IPC分类号： H01L39/12 , H01B12/00
CPC分类号： H01L39/143 , H01L39/2425 , H01L39/2451
摘要： An oxide superconductor with superconduction properties being improved by effectively introducing a pinning center thereinto and its fabrication method are disclosed. The superconductor has a high-crystallinity oxide superconductor film which is formed on a substrate with a direction of crystal grain being oriented almost perpendicularly to the substrate and with (100) planes of neighboring crystal grains being oriented to form an oblique angle ranging from 0 to 4 degrees or 86 to 90 degrees. The film has a multilayer structure including a plurality of high-density magnetic field trap layers stacked in almost parallel to the substrate and a low-density magnetic field trap layer sandwiched therebetween. An average grain boundary width of the high-density trap layers in a cross-section horizontal to the substrate is 80 nm or less. The width is less than an average grain boundary width of the low-density trap layer in its cross-section horizontal to the substrate.
摘要翻译：公开了一种通过有效地引入钉扎中心来提高超导性能的氧化物超导体及其制造方法。超导体具有形成在基板上的高结晶度氧化物超导体膜，其中晶体的<001>方向几乎垂直于衬底取向，并且相邻晶粒的（100）面被定向以形成倾斜角度范围从0到4度或86到90度。膜具有多层结构，其包括与基板几乎平行堆叠的多个高密度磁场陷阱层和夹在其间的低密度磁场陷阱层。与衬底水平的横截面中的高密度陷阱层的平均晶界宽度为80nm以下。该宽度小于在垂直于衬底的横截面中的低密度陷阱层的平均晶界宽度。

6. 发明申请

US20110037044A1 INFORMATION RECORDING DEVICE AND INFORMATION RECORDING/REPRODUCTION SYSTEM INCLUDING THE SAME 审中-公开
标题翻译：信息记录装置和包括其的信息记录/再现系统
公开(公告)号：US20110037044A1
公开(公告)日：2011-02-17
申请号：US12921471
申请日：2009-03-10
申请人： Takeshi Araki , Takayuki Tsukamoto , Takeshi Yamaguchi
发明人： Takeshi Araki , Takayuki Tsukamoto , Takeshi Yamaguchi
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： This disclosure provides an information recording device for use in a non-volatile information recording/reproduction system having a high recording density, the device including a resistive material having less phase separation or the like during switching. This disclosure also provides an information recording/reproduction system including the device. This disclosure provides an information recording device including: a pair of electrodes; and a recording layer between the electrodes, the recording layer recording information by its resistance change, the recording layer including at least one of (a) M3Oz and (b) AxM3—x0z as a main component, in (a) and (b), z being a value representing oxygen deficiency from z=4.5, and in (b), x satisfying 0.00
摘要翻译：本公开提供了一种用于具有高记录密度的非易失性信息记录/再现系统中的信息记录装置，该装置包括在切换期间具有较小相位分离等的电阻材料。本公开还提供了包括该设备的信息记录/再现系统。本公开提供一种信息记录装置，包括：一对电极; （a）和（b）中的（a）M3Oz和（b）AxM3-x0z中的至少一个作为主要成分，记录层通过其电阻变化记录信息，记录层记录信息， z表示从z = 4.5表示氧缺乏的值，在（b）中，x满足0.00

7. 发明授权

US08372313B2 Electrical-discharge surface-treatment electrode and metal coating film formed using the same 有权
标题翻译：放电表面处理电极和使用其形成的金属涂膜
公开(公告)号：US08372313B2
公开(公告)日：2013-02-12
申请号：US12678156
申请日：2008-10-31
申请人： Yoshikazu Nakano , Takeshi Araki , Akihiro Goto
发明人： Yoshikazu Nakano , Takeshi Araki , Akihiro Goto
IPC分类号： H01B1/02 , H01B1/22 , H05F3/00 , H01T14/00 , H05H1/48
CPC分类号： C23C26/00 , Y10T428/31678
摘要： An objective is to provide an electrical-discharge surface-treatment electrode by which a high-coverage zinc coating film can be formed. The electrical-discharge surface-treatment electrode is made by uniformly distributing and compression-molding zinc-based powders including at least one of a pure-metal zinc powder and a metal zinc powder whose surface is oxidized, and zinc-oxide powders whose content rate ranges from 5 to 90 volume percent with respect to the zinc-based powders, to obtain a porosity ranging from 10 to 55 volume percent; then, the zinc coating film is formed using the electrical-discharge surface-treatment electrode.
摘要翻译：目的是提供一种能够形成高覆盖率的锌涂膜的放电表面处理电极。放电表面处理电极通过均匀分布和压缩成型而形成的锌基粉末，所述锌基粉末包括纯金属锌粉末和表面被氧化的金属锌粉末中的至少一种，以及氧化锌粉末的含量比相对于锌系粉末为5〜90体积％，得到10〜55体积％的孔隙率。然后，使用放电表面处理电极形成锌涂膜。

8. 发明申请

US20110172103A1 OXIDE SUPERCONDUCTOR AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：氧化物超导体及其制造方法
公开(公告)号：US20110172103A1
公开(公告)日：2011-07-14
申请号：US12900024
申请日：2010-10-07
申请人： Takeshi Araki
发明人： Takeshi Araki
IPC分类号： H01L39/12 , H01L39/24 , B32B15/00
CPC分类号： H01L39/2425 , C23C18/1216 , C23C18/1254 , C23C18/1295 , Y10T29/49014 , Y10T428/24975 , Y10T428/26
摘要： An oxide superconductor film formed on a substrate includes an oxide containing at least one metal M selected from the group consisting of yttrium and lanthanoid metals, provided that cerium, praseodymium, promethium and ruthenium are excluded, and barium and copper, in which the film has an average thickness of 350 nm or more, an average amount of residual carbon of 3×1019 atoms/cc or more, and an amount of residual fluorine in a range of 5×1017 to 1×1019 atoms/cc, and in which, when divided the film into a plurality of regions from a surface of the film or from an interface between the film and the substrate, each region having a thickness of 10 nm, atomic ratios of copper, fluorine, oxygen and carbon between two adjacent regions are in a range of ⅕ times to 5 times.
摘要翻译：形成在基板上的氧化物超导体膜包括含有选自钇和镧系金属中的至少一种选自金属M的氧化物的氧化物，条件是除去铈，镨，ium和钌，以及其中所述膜具有的钡和铜 350nm以上的平均厚度，3×1019个原子/ cc以上的残存碳的平均量和5×1017〜1×1019个原子/ cc范围内的残留氟量，其中，当将薄膜从薄膜的表面或薄膜与基片之间的界面分成多个区域时，两个相邻区域之间的厚度为10nm，铜，氟，氧和碳原子比的区域为在⅕倍至5倍的范围内。

9. 发明授权

US07335316B2 Plastic magnet precursor, production method for the same, and plastic magnet 有权
标题翻译：塑料磁体前体，制作方法相同，塑料磁铁
公开(公告)号：US07335316B2
公开(公告)日：2008-02-26
申请号：US10766961
申请日：2004-01-30
申请人： Takako Takei , Takeshi Araki , Takanori Sone , Hiroyuki Teramoto , Takayuki Hanaki , Noriaki Matsunaga
发明人： Takako Takei , Takeshi Araki , Takanori Sone , Hiroyuki Teramoto , Takayuki Hanaki , Noriaki Matsunaga
IPC分类号： H01F1/00
CPC分类号： H01F1/083 , H01F1/0578 , H01F1/113 , H01F41/0273
摘要： A plastic magnet precursor which can be supplied in molding a plastic magnet with a constant composition without requiring kneading in which a resin is melted and sheared. Through injection molding using the precursor, a plastic magnet having little deterioration of magnetic properties and a small variation in quality is obtained. The plastic magnet precursor according to the present invention includes an Nd—Fe—B isotropic magnet powder and a ferrite anisotropic magnet powder subjected to coating with a titanate coupling agent, and a thermoplastic resin powder adhered around the magnet powder.
摘要翻译：一种塑料磁体前体，可以在不需要捏合的情况下以恒定的组成成型塑料磁体来供应，其中树脂被熔化和剪切。通过使用前体的注射成型，可以获得磁性能变差小，质量变化小的塑料磁体。根据本发明的塑料磁体前体包括Nd-Fe-B各向同性磁体粉末和经过钛酸酯偶联剂涂覆的铁素体各向异性磁体粉末和粘附在磁体粉末附近的热塑性树脂粉末。

10. 发明授权

US06586042B2 Method of preparing oxide superconductor with purified mixed metal trifluoroacetate 有权
标题翻译：用纯化的三氟乙酸盐混合制备氧化物超导体的方法
公开(公告)号：US06586042B2
公开(公告)日：2003-07-01
申请号：US09945821
申请日：2001-09-05
申请人： Takeshi Araki , Katsuya Yamagiwa , Izumi Hirabayashi
发明人： Takeshi Araki , Katsuya Yamagiwa , Izumi Hirabayashi
IPC分类号： B05D512
CPC分类号： H01L39/2425 , Y10T29/49014
摘要： An aqueous solution of mixed metal acetate including one kind or more of element selected from lanthanide series and yttrium, barium and copper is mixed with trifluoroacetic acid to prepare a solution of mixed metal trifluoroacetate. From a solution of mixed metal trifluoroacetate obtained thus, purified mixed metal trifluoroacetate of which total content of water and acetic acid is 2% by weight or less is prepared. With purified mixed metal trifluoroacetate, an oxide superconductor of excellent performance may be prepared.
摘要翻译：将选自镧系元素和钇，钡和铜中的一种或多种元素的混合金属乙酸盐的水溶液与三氟乙酸混合以制备混合金属三氟乙酸盐的溶液。从由此获得的混合金属三氟乙酸盐溶液制备其中水和乙酸的总含量为2重量％以下的纯化的三氟乙酸盐混合物。使用纯化的三氟乙酸盐混合金属，可以制备出优异性能的氧化物超导体。

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