专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09984901B2 Method for making a microelectronic assembly having conductive elements 有权
公开(公告)号：US09984901B2
公开(公告)日：2018-05-29
申请号：US14933225
申请日：2015-11-05
申请人： Tessera, Inc.
发明人： Belgacem Haba , Teck-Gyu Kang , Ilyas Mohammed , Ellis Chau
IPC分类号： H01L21/00 , H01L21/56 , G01R31/28 , H01L23/31 , H01L23/498 , H01L25/065 , H01L25/10 , H01L25/00 , H01L23/00
CPC分类号： H01L21/565 , G01R31/2886 , H01L21/56 , H01L23/3128 , H01L23/49805 , H01L23/49811 , H01L23/49816 , H01L23/49838 , H01L23/4985 , H01L23/49894 , H01L24/48 , H01L24/73 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2225/0651 , H01L2225/0652 , H01L2225/06586 , H01L2225/1023 , H01L2225/1058 , H01L2225/1088 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2924/15331 , H01L2924/181 , H01L2924/1815 , H01L2924/19041 , H01L2924/3011 , H01L2924/3511 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A method of making a microelectronic assembly can include molding a dielectric material around at least two conductive elements which project above a height of a substrate having a microelectronic element mounted thereon, so that remote surfaces of the conductive elements remain accessible and exposed within openings extending from an exterior surface of the molded dielectric material. The remote surfaces can be disposed at heights from said surface of said substrate which are lower or higher than a height of the exterior surface of the molded dielectric material from the substrate surface. The conductive elements can be arranged to simultaneously carry first and second different electric potentials: e.g., power, ground or signal potentials.

2. 发明授权

US09899353B2 Off-chip vias in stacked chips 有权
公开(公告)号：US09899353B2
公开(公告)日：2018-02-20
申请号：US14725975
申请日：2015-05-29
申请人： Tessera, Inc.
发明人： Belgacem Haba , Ilyas Mohammed , Vage Oganesian , David Ovrutsky , Laura Wills Mirkarimi
IPC分类号： H01L25/065 , H01L25/00 , H01L21/683 , H01L21/78 , H01L23/538 , H01L23/00
CPC分类号： H01L21/78 , H01L21/6835 , H01L23/5382 , H01L24/24 , H01L24/48 , H01L24/82 , H01L24/96 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2221/68377 , H01L2224/16225 , H01L2224/16227 , H01L2224/24145 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/9202 , H01L2224/97 , H01L2225/06506 , H01L2225/0651 , H01L2225/06517 , H01L2225/06524 , H01L2225/06541 , H01L2225/06551 , H01L2225/06582 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/15311 , H01L2224/82 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2924/00012
摘要： A microelectronic assembly includes first and second stacked microelectronic elements, each having spaced apart traces extending along a front face and beyond at least a first edge thereof. An insulating region can contact the edges of each microelectronic element and at least portions of the traces of each microelectronic element extending beyond the respective first edges. The insulating region can define first and second side surfaces adjacent the first and second edges of the microelectronic elements. A plurality of spaced apart openings can extend along a side surface of the microelectronic assembly. Electrical conductors connected with respective traces can have portions disposed in respective openings and extending along the respective openings. The electrical conductors may extend to pads or solder balls overlying a face of one of the microelectronic elements.

3. 发明授权

US09859220B2 Laminated chip having microelectronic element embedded therein 有权
公开(公告)号：US09859220B2
公开(公告)日：2018-01-02
申请号：US15131966
申请日：2016-04-18
申请人： Tessera, Inc.
发明人： Vage Oganesian , Ilyas Mohammed , Craig Mitchell , Belgacem Haba , Piyush Savalia
IPC分类号： H01L23/538 , H01L23/48 , H01L25/065 , H01L27/146 , H01L29/06 , H01L23/00 , H01L23/31 , H01L25/00 , H01L25/10
CPC分类号： H01L23/5384 , H01L23/3114 , H01L23/481 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/17 , H01L24/19 , H01L24/20 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/94 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L27/14621 , H01L27/14627 , H01L27/14645 , H01L29/0657 , H01L2224/0237 , H01L2224/0401 , H01L2224/05552 , H01L2224/0557 , H01L2224/06181 , H01L2224/13024 , H01L2224/16145 , H01L2224/16225 , H01L2224/1703 , H01L2224/32145 , H01L2224/73204 , H01L2224/81805 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06544 , H01L2225/06555 , H01L2225/1058 , H01L2924/00014 , H01L2924/01029 , H01L2924/01322 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/1434 , H01L2924/1436 , H01L2924/1437 , H01L2924/18161 , H01L2224/81 , H01L2924/00012 , H01L2924/00
摘要： A structure including a first semiconductor chip with front and rear surfaces and a cavity in the rear surface. A second semiconductor chip is mounted within the cavity. The first chip may have vias extending from the cavity to the front surface and via conductors within these vias serving to connect the additional microelectronic element to the active elements of the first chip. The structure may have a volume comparable to that of the first chip alone and yet provide the functionality of a multi-chip assembly. A composite chip incorporating a body and a layer of semiconductor material mounted on a front surface of the body similarly may have a cavity extending into the body from the rear surface and may have an additional microelectronic element mounted in such cavity.

4. 发明申请

US20170256443A1 MICROELECTRONIC ELEMENTS WITH POST-ASSEMBLY PLANARIZATION 有权
公开(公告)号：US20170256443A1
公开(公告)日：2017-09-07
申请号：US15600228
申请日：2017-05-19
申请人： Tessera, Inc.
发明人： Vage Oganesian , Belgacem Haba , Craig Mitchell , Ilyas Mohammed , Piyush Savalia
IPC分类号： H01L21/768 , H01L23/498
CPC分类号： H01L21/76819 , H01L21/76877 , H01L23/13 , H01L23/3128 , H01L23/49827 , H01L23/4985 , H01L23/5389 , H01L24/18 , H01L24/19 , H01L24/24 , H01L24/25 , H01L24/82 , H01L24/97 , H01L25/105 , H01L25/117 , H01L25/16 , H01L25/50 , H01L2224/04105 , H01L2224/12105 , H01L2224/16227 , H01L2224/16235 , H01L2224/24227 , H01L2224/24247 , H01L2224/32225 , H01L2224/32245 , H01L2224/73267 , H01L2224/82 , H01L2224/92244 , H01L2224/97 , H01L2225/1023 , H01L2225/1029 , H01L2225/1035 , H01L2225/1041 , H01L2225/1052 , H01L2225/1058 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01061 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/07811 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15156 , H01L2924/15165 , H01L2924/15192 , H01L2924/15311 , H01L2924/15313 , H01L2924/15331 , H01L2924/157 , H01L2924/15788 , H01L2924/18161 , Y10T29/49002 , H01L2224/81 , H01L2924/00 , H01L2224/83
摘要： A microelectronic unit can include a carrier structure having a front surface, a rear surface remote from the front surface, and a recess having an opening at the front surface and an inner surface located below the front surface of the carrier structure. The microelectronic unit can also include a microelectronic element having a top surface adjacent the inner surface, a bottom surface remote from the top surface, and a plurality of contacts at the top surface. The microelectronic unit can also include terminals electrically connected with the contacts of the microelectronic element. The terminals can be electrically insulated from the carrier structure. The microelectronic unit can also include a dielectric region contacting at least the bottom surface of the microelectronic element. The dielectric region can define a planar surface located coplanar with or above the front surface of the carrier structure.

5. 发明授权

US09659812B2 Microelectronic elements with post-assembly planarization 有权
公开(公告)号：US09659812B2
公开(公告)日：2017-05-23
申请号：US14708989
申请日：2015-05-11
申请人： Tessera, Inc.
发明人： Vage Oganesian , Belgacem Haba , Craig Mitchell , Ilyas Mohammed , Piyush Savalia
IPC分类号： H01L21/768 , H01L23/538 , H01L23/00 , H01L25/10 , H01L25/00 , H01L25/16 , H01L25/11 , H01L23/13 , H01L23/31 , H01L23/498
CPC分类号： H01L21/76819 , H01L21/76877 , H01L23/13 , H01L23/3128 , H01L23/49827 , H01L23/4985 , H01L23/5389 , H01L24/18 , H01L24/19 , H01L24/24 , H01L24/25 , H01L24/82 , H01L24/97 , H01L25/105 , H01L25/117 , H01L25/16 , H01L25/50 , H01L2224/04105 , H01L2224/12105 , H01L2224/16227 , H01L2224/16235 , H01L2224/24227 , H01L2224/24247 , H01L2224/32225 , H01L2224/32245 , H01L2224/73267 , H01L2224/82 , H01L2224/92244 , H01L2224/97 , H01L2225/1023 , H01L2225/1029 , H01L2225/1035 , H01L2225/1041 , H01L2225/1052 , H01L2225/1058 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01061 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/07811 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15156 , H01L2924/15165 , H01L2924/15192 , H01L2924/15311 , H01L2924/15313 , H01L2924/15331 , H01L2924/157 , H01L2924/15788 , H01L2924/18161 , Y10T29/49002 , H01L2224/81 , H01L2924/00 , H01L2224/83
摘要： A microelectronic unit can include a carrier structure having a front surface, a rear surface remote from the front surface, and a recess having an opening at the front surface and an inner surface located below the front surface of the carrier structure. The microelectronic unit can also include a microelectronic element having a top surface adjacent the inner surface, a bottom surface remote from the top surface, and a plurality of contacts at the top surface. The microelectronic unit can also include terminals electrically connected with the contacts of the microelectronic element. The terminals can be electrically insulated from the carrier structure. The microelectronic unit can also include a dielectric region contacting at least the bottom surface of the microelectronic element. The dielectric region can define a planar surface located coplanar with or above the front surface of the carrier structure.

6. 发明授权

US09560773B2 Electrical barrier layers 有权
标题翻译：电阻层
公开(公告)号：US09560773B2
公开(公告)日：2017-01-31
申请号：US14809117
申请日：2015-07-24
申请人： Tessera, Inc.
发明人： Cyprian Uzoh , Vage Oganesian , Ilyas Mohammed , Belgacem Haba , Piyush Savalia , Craig Mitchell
IPC分类号： H05K1/03 , H05K1/09 , H05K3/40 , H01L23/00
CPC分类号： H01L24/05 , H01L2224/04042 , H01L2224/05083 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05169 , H01L2224/056 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01074 , H01L2924/013 , H05K1/09 , H05K3/4007 , H05K2201/032 , H05K2201/0326 , H05K2201/0338
摘要： An electrical connection structure includes a variable-composition nickel alloy layer with a minor constituent selected from a group consisting of boron, carbon, phosphorus, and tungsten, wherein at least over a portion of a conductive substrate, the concentration of the minor constituent decreases throughout the variable-composition nickel alloy layer in a direction from the bottom surface of the variable-composition nickel alloy layer to the top surface of the variable-composition nickel alloy layer.
摘要翻译：电连接结构包括具有选自硼，碳，磷和钨的次要成分的可变组成镍合金层，其中至少在一部分导电基底上，次要成分的浓度全部降低该可变组成镍合金层在从可变组成镍合金层的底面到可变组成镍合金层的顶表面的方向上。

7. 发明申请

US20160315139A1 HIGH DENSITY THREE-DIMENSIONAL INTEGRATED CAPACITORS 审中-公开
公开(公告)号：US20160315139A1
公开(公告)日：2016-10-27
申请号：US15198524
申请日：2016-06-30
申请人： Tessera, Inc.
发明人： Vage Oganesian , Belgacem Haba , Ilyas Mohammed , Piyush Savalia
IPC分类号： H01L49/02 , H01L23/48
CPC分类号： H01L28/91 , H01L23/481 , H01L28/40 , H01L28/60 , H01L2223/6622 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A component includes a substrate and a capacitor formed in contact with the substrate. The substrate can consist essentially of a material having a coefficient of thermal expansion of less than 10 ppm/° C. The substrate can have a surface and an opening extending downwardly therefrom. The capacitor can include at least first and second pairs of electrically conductive plates and first and second electrodes. The first and second pairs of plates can be connectable with respective first and second electric potentials. The first and second pairs of plates can extend along an inner surface of the opening, each of the plates being separated from at least one adjacent plate by a dielectric layer. The first and second electrodes can be exposed at the surface of the substrate and can be coupled to the respective first and second pairs of plates.

8. 发明授权

US09437557B2 High density three-dimensional integrated capacitors 有权
公开(公告)号：US09437557B2
公开(公告)日：2016-09-06
申请号：US14934544
申请日：2015-11-06
申请人： Tessera, Inc.
发明人： Ilyas Mohammed , Belgacem Haba , Cyprian Emeka Uzoh , Piyush Savalia , Vage Oganesian
IPC分类号： H01L23/64 , H01L21/00 , H01G4/06 , H01L21/768 , H01L23/48 , H01L49/02 , H01L23/498 , H01L25/16 , H01L25/065
CPC分类号： H01L23/642 , H01G4/06 , H01L21/76898 , H01L23/481 , H01L23/49822 , H01L23/49827 , H01L25/0657 , H01L25/16 , H01L28/40 , H01L28/91 , H01L28/92 , H01L2223/6622 , H01L2924/0002 , H01L2924/00
摘要： A capacitor can include a substrate having a first surface, a second surface remote from the first surface, and a through opening extending between the first and second surfaces, first and second metal elements, and a capacitor dielectric layer separating and insulating the first and second metal elements from one another at least within the through opening. The first metal element can be exposed at the first surface and can extend into the through opening. The second metal element can be exposed at the second surface and can extend into the through opening. The first and second metal elements can be electrically connectable to first and second electric potentials. The capacitor dielectric layer can have an undulating shape.

9. 发明授权

US09406532B2 Interposer having molded low CTE dielectric 有权
标题翻译：具有低CTE电介质的内插器
公开(公告)号：US09406532B2
公开(公告)日：2016-08-02
申请号：US14221486
申请日：2014-03-21
申请人： Tessera, Inc.
发明人： Belgacem Haba , Ilyas Mohammed
IPC分类号： H01L21/44 , H01L21/48 , H01L23/498 , H05K3/40
CPC分类号： H01L21/486 , H01L23/49827 , H01L23/49861 , H01L23/49894 , H01L2224/16225 , H01L2924/09701 , H01L2924/15311 , H05K3/4046 , H05K2201/0979 , H05K2201/10378 , H05K2201/10674
摘要： A method for making an interconnection component is disclosed, including forming a plurality of metal posts extending away from a reference surface. Each post is formed having a pair of opposed end surface and an edge surface extending therebetween. A dielectric layer is formed contacting the edge surfaces and filling spaces between adjacent ones of the posts. The dielectric layer has first and second opposed surfaces adjacent the first and second end surfaces. The dielectric layer has a coefficient of thermal expansion of less than 8 ppm/° C. The interconnection component is completed such that it has no interconnects between the first and second end surfaces of the posts that extend in a lateral direction. First and second pluralities of wettable contacts are adjacent the first and second opposed surfaces. The wettable contacts are usable to bond the interconnection component to a microelectronic element or a circuit panel.
摘要翻译：公开了一种用于制造互连部件的方法，包括形成远离参考表面延伸的多个金属柱。每个柱形成具有一对相对的端面和在它们之间延伸的边缘表面。形成接触边缘表面和相邻柱之间的填充空间的电介质层。电介质层具有邻近第一和第二端面的第一和第二相对表面。电介质层的热膨胀系数小于8ppm /℃。互连部件完成，使得它们在横向方向上延伸的柱的第一和第二端面之间没有互连。第一和第二多个可湿接触部分邻近第一和第二相对表面。可湿接触可用于将互连部件连接到微电子元件或电路板。

10. 发明授权

US09355959B2 Active chip on carrier or laminated chip having microelectronic element embedded therein 有权
公开(公告)号：US09355959B2
公开(公告)日：2016-05-31
申请号：US14094621
申请日：2013-12-02
申请人： Tessera, Inc.
发明人： Vage Oganesian , Ilyas Mohammed , Craig Mitchell , Belgacem Haba , Piyush Savalia
IPC分类号： H01L23/48 , H01L23/538 , H01L25/065 , H01L27/146 , H01L29/06 , H01L23/00 , H01L23/31 , H01L25/10
CPC分类号： H01L23/5384 , H01L23/3114 , H01L23/481 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/17 , H01L24/19 , H01L24/20 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/94 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L27/14621 , H01L27/14627 , H01L27/14645 , H01L29/0657 , H01L2224/0237 , H01L2224/0401 , H01L2224/05552 , H01L2224/0557 , H01L2224/06181 , H01L2224/13024 , H01L2224/16145 , H01L2224/16225 , H01L2224/1703 , H01L2224/32145 , H01L2224/73204 , H01L2224/81805 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06544 , H01L2225/06555 , H01L2225/1058 , H01L2924/00014 , H01L2924/01029 , H01L2924/01322 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/1434 , H01L2924/1436 , H01L2924/1437 , H01L2924/18161 , H01L2224/81 , H01L2924/00012 , H01L2924/00
摘要： A structure including a first semiconductor chip with front and rear surfaces and a cavity in the rear surface. A second semiconductor chip is mounted within the cavity. The first chip may have vias extending from the cavity to the front surface and via conductors within these vias serving to connect the additional microelectronic element to the active elements of the first chip. The structure may have a volume comparable to that of the first chip alone and yet provide the functionality of a multi-chip assembly. A composite chip incorporating a body and a layer of semiconductor material mounted on a front surface of the body similarly may have a cavity extending into the body from the rear surface and may have an additional microelectronic element mounted in such cavity.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式