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1. 发明申请

US20120026371A1 IMAGE CAPTURING DEVICE, IMAGE CAPTURING SYSTEM, AND METHOD OF DRIVING IMAGE CAPTURING DEVICE 有权
标题翻译：图像捕获设备，图像捕获系统和驱动图像捕获设备的方法
公开(公告)号：US20120026371A1
公开(公告)日：2012-02-02
申请号：US13256303
申请日：2010-04-28
申请人： Tetsuya Itano , Satoko Iida , Hidekazu Takahashi , Daisuke Yoshida
发明人： Tetsuya Itano , Satoko Iida , Hidekazu Takahashi , Daisuke Yoshida
IPC分类号： H04N5/335
CPC分类号： H04N5/378 , H04N5/3658
摘要： An image capturing device comprises a pixel array having a plurality of pixels each including a photoelectric conversion portion, a plurality of signal lines connected to the pixel array, a plurality of column amplifiers configured to respectively amplify signals transferred from the pixel array via the signal lines, the column amplifier comprising a first input terminal, a first output terminal, an amplifier having a second input terminal and a second output terminal, a feedback capacitance arranged between the second input terminal and the first output terminal, an input capacitance having an electrode connected to the first input terminal, and an electrode connected to the second input terminal, a first switch arranged between the second input terminal and the second output terminal, a second switch arranged between the first output terminal and the second output terminal, and a third switch arranged between a reference voltage terminal and the first output terminal.
摘要翻译：一种图像捕获装置，包括具有多个像素的像素阵列，每个像素包括光电转换部分，连接到像素阵列的多个信号线，多个列放大器，其经配置以分别放大经由信号线从像素阵列传送的信号，所述列放大器包括第一输入端子，第一输出端子，具有第二输入端子和第二输出端子的放大器，布置在所述第二输入端子和所述第一输出端子之间的反馈电容器，具有连接的电极的输入电容器连接到第二输入端子的电极和布置在第二输入端子和第二输出端子之间的第一开关，布置在第一输出端子和第二输出端子之间的第二开关，以及第三开关布置在参考电压端子和第一输出端子之间。

2. 发明授权

US08400546B2 Image capturing device, image capturing system, and method of driving image capturing device 有权
标题翻译：图像捕获装置，图像捕获系统和驱动图像捕获装置的方法
公开(公告)号：US08400546B2
公开(公告)日：2013-03-19
申请号：US13256303
申请日：2010-04-28
申请人： Tetsuya Itano , Satoko Iida , Hidekazu Takahashi , Daisuke Yoshida
发明人： Tetsuya Itano , Satoko Iida , Hidekazu Takahashi , Daisuke Yoshida
IPC分类号： H04N5/335
CPC分类号： H04N5/378 , H04N5/3658
摘要： An image capturing device comprises a pixel array having a plurality of pixels each including a photoelectric conversion portion, a plurality of signal lines connected to the pixel array, a plurality of column amplifiers configured to respectively amplify signals transferred from the pixel array via the signal lines, the column amplifier comprising a first input terminal, a first output terminal, an amplifier having a second input terminal and a second output terminal, a feedback capacitance arranged between the second input terminal and the first output terminal, an input capacitance having an electrode connected to the first input terminal, and an electrode connected to the second input terminal, a first switch arranged between the second input terminal and the second output terminal, a second switch arranged between the first output terminal and the second output terminal, and a third switch arranged between a reference voltage terminal and the first output terminal.
摘要翻译：一种图像捕获装置，包括具有多个像素的像素阵列，每个像素包括光电转换部分，连接到像素阵列的多个信号线，多个列放大器，其经配置以分别放大经由信号线从像素阵列传送的信号，所述列放大器包括第一输入端子，第一输出端子，具有第二输入端子和第二输出端子的放大器，布置在所述第二输入端子和所述第一输出端子之间的反馈电容器，具有连接的电极的输入电容器连接到第二输入端子的电极和布置在第二输入端子和第二输出端子之间的第一开关，布置在第一输出端子和第二输出端子之间的第二开关，以及第三开关布置在参考电压端子和第一输出端子之间。

3. 发明申请

US20120105695A1 SOLID-STATE IMAGE PICKUP DEVICE 有权
标题翻译：固态图像拾取器件
公开(公告)号：US20120105695A1
公开(公告)日：2012-05-03
申请号：US13280189
申请日：2011-10-24
申请人： Satoko Iida
发明人： Satoko Iida
IPC分类号： H04N5/335
CPC分类号： H04N5/357 , H03G5/28 , H04N5/243 , H04N5/347 , H04N5/363 , H04N5/37457 , H04N5/378
摘要： A solid-state image pickup device includes a pixel including a photoelectric conversion element that converts light into an electric signal, a feedback amplifying circuit that amplifies a signal of the pixel using an amplification factor that is based on a variable feedback capacitor, a storage capacitor connected to an output node of the amplifying circuit via a first switch, and a load element connected to the output node of the amplifying circuit via a second switch. The second switch is in an on state during any one of or both of a period in which the feedback capacitor is reset and a period in which the first switch is in an on state.
摘要翻译：固态图像拾取装置包括：像素，包括将光转换成电信号的光电转换元件;反馈放大电路，其使用基于可变反馈电容器的放大系数放大像素的信号;存储电容器经由第一开关连接到放大电路的输出节点，以及经由第二开关连接到放大电路的输出节点的负载元件。第二开关在反馈电容器被复位的时段和第一开关处于导通状态的时段中的任何一个或两者期间处于导通状态。

4. 发明授权

US08110885B2 Solid state imaging device comprising hydrogen supply film and antireflection film 失效
标题翻译：固态成像装置，包括氢供应膜和抗反射膜
公开(公告)号：US08110885B2
公开(公告)日：2012-02-07
申请号：US11216006
申请日：2005-09-01
申请人： Satoko Iida , Takanori Watanabe
发明人： Satoko Iida , Takanori Watanabe
IPC分类号： H01L31/0232 , H01L27/146
CPC分类号： H01L27/1463 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L31/02327
摘要： Provided is a MOS type solid state imaging device, including a semiconductor substrate, a plurality of pixels arranged on the semiconductor substrate, each pixel having a light receiving element for generating a signal charge due to incident light, and a MOS transistor for reading the signal charge, and a hydrogen supply film arranged on the semiconductor substrate over the plurality of pixels and having a region corresponding to the light receiving element at least a part of which has a film thickness greater than the other part of the region.
摘要翻译：提供了一种MOS型固态成像装置，包括半导体衬底，布置在半导体衬底上的多个像素，每个像素具有用于产生由于入射光引起的信号电荷的光接收元件，以及用于读取信号的MOS晶体管电荷以及布置在多个像素上的半导体衬底上的氢供应膜，并且具有对应于至少一部分具有大于该区域的另一部分的膜厚度的光接收元件的区域。

5. 发明授权

US08411188B2 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US08411188B2
公开(公告)日：2013-04-02
申请号：US13280189
申请日：2011-10-24
申请人： Satoko Iida
发明人： Satoko Iida
IPC分类号： H04N5/335
CPC分类号： H04N5/357 , H03G5/28 , H04N5/243 , H04N5/347 , H04N5/363 , H04N5/37457 , H04N5/378
摘要： A solid-state image pickup device includes a pixel including a photoelectric conversion element that converts light into an electric signal, a feedback amplifying circuit that amplifies a signal of the pixel using an amplification factor that is based on a variable feedback capacitor, a storage capacitor connected to an output node of the amplifying circuit via a first switch, and a load element connected to the output node of the amplifying circuit via a second switch. The second switch is in an on state during any one of or both of a period in which the feedback capacitor is reset and a period in which the first switch is in an on state.
摘要翻译：固态图像拾取装置包括：像素，包括将光转换成电信号的光电转换元件;反馈放大电路，其使用基于可变反馈电容器的放大系数放大像素的信号;存储电容器经由第一开关连接到放大电路的输出节点，以及经由第二开关连接到放大电路的输出节点的负载元件。第二开关在反馈电容器被复位的时段和第一开关处于导通状态的时段中的任何一个或两者期间处于导通状态。

6. 发明授权

US08110859B2 Antireflection portion in a shallow isolation trench for a photoelectric conversion device 有权
标题翻译：用于光电转换装置的浅隔离沟槽中的抗反射部分
公开(公告)号：US08110859B2
公开(公告)日：2012-02-07
申请号：US12398681
申请日：2009-03-05
申请人： Satoko Iida
发明人： Satoko Iida
IPC分类号： H01L31/113
CPC分类号： H01L27/14623 , H01L27/1463
摘要： A photoelectric conversion device includes a plurality of photoelectric conversion units each generating charges corresponding to light, an element isolation portion which electrically isolates the plurality of photoelectric conversion units, and an antireflection portion which is arranged to prevent reflection of light, which has entered the element isolation portion from above the element isolation portion, only on a bottom face of the element isolation portion or only on the bottom face and a lower part of a side face of the element isolation portion. In addition, a first semiconductor region is arranged below the element isolation portion. A refractive index of the antireflection portion takes a value between a refractive index of the element isolation portion and a refractive index of the first semiconductor region.
摘要翻译：光电转换装置包括多个光电转换单元，每个光电转换单元产生对应于光的电荷，将多个光电转换单元电隔离的元件隔离部分和设置成防止已经进入元件的光的反射的抗反射部分隔离部分仅在元件隔离部分的上方，仅在元件隔离部分的底面上，或仅在元件隔离部分的侧面的底面和下部。此外，第一半导体区域布置在元件隔离部分的下方。抗反射部分的折射率取决于元件隔离部分的折射率和第一半导体区域的折射率之间的值。

7. 发明申请

US20110019052A1 PHOTOELECTRIC CONVERSION DEVICE AND IMAGE CAPTURING SYSTEM 有权
标题翻译：光电转换装置和图像捕获系统
公开(公告)号：US20110019052A1
公开(公告)日：2011-01-27
申请号：US12824306
申请日：2010-06-28
申请人： Satoko Iida , Mahito Shinohara
发明人： Satoko Iida , Mahito Shinohara
IPC分类号： H04N5/335 , H01L31/18
CPC分类号： H01L27/14603 , H01L27/14612 , H01L27/14643 , H01L27/14689 , H01L31/103
摘要： A photoelectric conversion device comprises an isolation portion defining an active region, a photoelectric converter arranged in the active region and including a charge accumulation region containing an impurity of a first conductivity type, a photoelectric converter arranged in the active region, a transfer electrode arranged on the active region and configured to form a channel to transfer charges generated by the photoelectric converter to the charge voltage converter, a first semiconductor region arranged in the active region between the photoelectric converter and the charge voltage converter, the first semiconductor region being covered with the transfer electrode and containing the impurity of the first conductivity type at a concentration lower than that in the charge accumulation region; and a second semiconductor region extending in the active region along an interface of the isolation portion facing at least the first semiconductor region, the second semiconductor region being of a second conductivity.
摘要翻译：光电转换装置包括限定有源区的隔离部分，布置在有源区中的光电转换器，包括含有第一导电类型的杂质的电荷累积区，布置在有源区中的光电转换器，布置在有源区上的转移电极所述有源区域并且被配置为形成用于将由所述光电转换器产生的电荷传送到所述充电电压转换器的通道，布置在所述光电转换器和所述电荷电压转换器之间的有源区域中的第一半导体区域，并且以比电荷累积区域低的浓度含有第一导电类型的杂质; 以及第二半导体区域，其沿着所述隔离部分的至少面向所述第一半导体区域的界面在所述有源区域中延伸，所述第二半导体区域具有第二导电性。

8. 发明申请

US20060061674A1 Solid state imaging device, method of manufacturing same, and digital camera 失效
标题翻译：固态成像装置，制造方法和数码相机
公开(公告)号：US20060061674A1
公开(公告)日：2006-03-23
申请号：US11216006
申请日：2005-09-01
申请人： Satoko Iida , Takanori Watanabe
发明人： Satoko Iida , Takanori Watanabe
IPC分类号： H04N5/335
CPC分类号： H01L27/1463 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L31/02327
摘要： Provided is a MOS type solid state imaging device, including a semiconductor substrate, a plurality of pixels arranged on the semiconductor substrate, each pixel having a light receiving element for generating a signal charge due to incident light, and a MOS transistor for reading the signal charge, and a hydrogen supply film arranged on the semiconductor substrate over the plurality of pixels and having a region corresponding to the light receiving element at least a part of which has a film thickness greater than the other part of the region.
摘要翻译：提供了一种MOS型固态成像装置，包括半导体衬底，布置在半导体衬底上的多个像素，每个像素具有用于产生由于入射光引起的信号电荷的光接收元件，以及用于读取信号的MOS晶体管电荷以及布置在多个像素上的半导体衬底上的氢供应膜，并且具有对应于至少一部分具有大于该区域的另一部分的膜厚度的光接收元件的区域。

9. 发明申请

US20090224346A1 IMAGE SENSING APPARATUS AND IMAGING SYSTEM 有权
标题翻译：图像感应装置和成像系统
公开(公告)号：US20090224346A1
公开(公告)日：2009-09-10
申请号：US12370928
申请日：2009-02-13
申请人： Satoko Iida
发明人： Satoko Iida
IPC分类号： H01L31/0232
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14627 , H01L27/1463 , H01L27/14643 , H01L27/14843 , H01L31/035272
摘要： An image sensing apparatus includes an image sensing region where a plurality of pixels are two-dimensionally arrayed. Each pixel includes a photoelectric conversion unit, and a semiconductor region arranged below an element isolation region having an insulation film to isolate the photoelectric conversion unit from an adjacent pixel. The semiconductor region includes a plurality of diffusion layers. The offset amount of at least one diffusion layer in the semiconductor region with respect to the normal line is larger in a pixel arranged at the peripheral portion of the image sensing region than a pixel arranged at the center of the image sensing region.
摘要翻译：图像感测装置包括二维排列多个像素的图像感测区域。每个像素包括光电转换单元和布置在具有绝缘膜的元件隔离区下方的半导体区域，以将光电转换单元与相邻像素隔离。半导体区域包括多个扩散层。相对于法线，半导体区域中的至少一个扩散层的偏移量在布置在图像感测区域的周边部分的像素中比在布置在图像感测区域的中心处的像素更大。

10. 发明授权

US07812382B2 Image sensing apparatus and imaging system 有权
标题翻译：图像感测装置及成像系统
公开(公告)号：US07812382B2
公开(公告)日：2010-10-12
申请号：US12370928
申请日：2009-02-13
申请人： Satoko Iida
发明人： Satoko Iida
IPC分类号： H01L31/131 , H01L27/108
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14627 , H01L27/1463 , H01L27/14643 , H01L27/14843 , H01L31/035272
摘要： An image sensing apparatus includes an image sensing region where a plurality of pixels are two-dimensionally arrayed. Each pixel includes a photoelectric conversion unit, and a semiconductor region arranged below an element isolation region having an insulation film to isolate the photoelectric conversion unit from an adjacent pixel. The semiconductor region includes a plurality of diffusion layers. The offset amount of at least one diffusion layer in the semiconductor region with respect to the normal line is larger in a pixel arranged at the peripheral portion of the image sensing region than a pixel arranged at the center of the image sensing region.
摘要翻译：图像感测装置包括二维排列多个像素的图像感测区域。每个像素包括光电转换单元和布置在具有绝缘膜的元件隔离区下方的半导体区域，以将光电转换单元与相邻像素隔离。半导体区域包括多个扩散层。相对于法线，半导体区域中的至少一个扩散层的偏移量在布置在图像感测区域的周边部分的像素中比在布置在图像感测区域的中心处的像素更大。

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