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1. 发明授权

US11942506B2 Solid state imaging device 有权
公开(公告)号：US11942506B2
公开(公告)日：2024-03-26
申请号：US16643110
申请日：2018-07-19
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Shin-ichiro Takagi , Mitsuhito Mase , Jun Hiramitsu , Yasuhito Yoneta , Masaharu Muramatsu
IPC分类号： H01L27/148 , H01L27/146 , H04N25/71 , H04N25/73
CPC分类号： H01L27/14843 , H01L27/14603 , H01L27/14607 , H01L27/14812 , H04N25/71 , H01L27/14831 , H04N25/73
摘要： The photosensitive region includes a first impurity region and a second impurity region having a higher impurity concentration than that of the first impurity region. The photosensitive region includes one end positioned away from the transfer section in the second direction and another end positioned closer to the transfer section in the second direction. A shape of the second impurity region in plan view is line-symmetric with respect to a center line of the photosensitive region along the second direction. A width of the second impurity region in the first direction increases in a transfer direction from the one end to the other end. An increase rate of the width of the second impurity region in each of sections, obtained by dividing the photosensitive region into n sections in the second direction, becomes gradually higher in the transfer direction. Here, n is an integer of two or more.

2. 发明申请

US20160268334A1 LINEAR IMAGE SENSOR 审中-公开
标题翻译：线性图像传感器
公开(公告)号：US20160268334A1
公开(公告)日：2016-09-15
申请号：US15032130
申请日：2014-10-31
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Shin-ichiro TAKAGI , Yasuhito YONETA , Hisanori SUZUKI , Masaharu MURAMATSU
IPC分类号： H01L27/148
CPC分类号： H01L27/14825 , H01L27/14812 , H01L27/14843 , H04N5/3692 , H04N5/37213
摘要： An optical detection unit AR is divided so as to have a plurality of pixel regions PX aligned in a column direction. Signals from the plurality of pixel regions PX are integrated for each optical detection unit AR, and output the signal as an electrical signal corresponding to a one-dimensional optical image in time series. Each of the pixel regions PX includes a resistive gate electrode R which promotes transfer of charges in the photoelectric conversion region and a charge accumulation region S2. A drain region ARD is adjacent to the charge accumulation region S2 through a channel region.
摘要翻译：光学检测单元AR被分割成具有在列方向上对齐的多个像素区域PX。针对每个光学检测单元AR集成来自多个像素区域PX的信号，并且以时间序列将该信号作为与一维光学图像对应的电信号输出。每个像素区域PX包括促进光电转换区域中的电荷转移的电阻栅电极R和电荷累积区域S2。漏极区域ARD通过沟道区域与电荷累积区域S2相邻。

3. 发明申请

US20160097841A1 DISTANCE-MEASURING/IMAGING APPARATUS, DISTANCE MEASURING METHOD OF THE SAME, AND SOLID IMAGING ELEMENT 审中-公开
标题翻译：距离测量/成像装置，其距离测量方法和固体成像元件
公开(公告)号：US20160097841A1
公开(公告)日：2016-04-07
申请号：US14965901
申请日：2015-12-11
申请人： Panasonic Intellectual Proprty Management Co., Ltd.
发明人： MITSUHIKO OTANI , TOSHIYA FUJII , JUNJI TOKUMOTO , HARUKA TAKANO
IPC分类号： G01S7/48 , G01S17/10 , G01S17/89
CPC分类号： G01S7/4808 , G01C3/08 , G01S7/4868 , G01S17/10 , G01S17/89 , H01L27/14843
摘要： A distance-measuring/imaging apparatus having a high S/N and a high distance measurement accuracy is provided. The distance-measuring/imaging apparatus includes: a signal generation unit for generating an emission signal and exposure signal; a light source unit for performing light irradiation by receiving the emission signal; an imaging unit for performing exposure by receiving the exposure signal and for acquiring the exposure amount of the reflected light; and a calculation unit for calculating and outputting the distance information on the basis of the exposure amount. The imaging unit acquires a first exposure amount corresponding to the exposure in a first emission/exposure period, in which the exposure is performed by receiving the exposure signal simultaneously with a receiving timing of the emission signal. The imaging unit acquires a second exposure amount corresponding to the exposure in a second emission/exposure period, in which the exposure is performed by receiving the exposure signal after a lapse of a delay time from the receiving timing of the emission signal. The calculation unit calculates the distance information on the basis of the first exposure amount and second exposure amount that are acquired by changing the repeat count of the emission signal in the first emission/exposure period
摘要翻译：提供了具有高S / N和高距离测量精度的距离测量/成像设备。距离测量/成像装置包括：信号产生单元，用于产生发射信号和曝光信号; 光源单元，用于通过接收发射信号进行光照射; 成像单元，用于通过接收曝光信号并获取反射光的曝光量来进行曝光; 以及计算单元，用于基于曝光量计算和输出距离信息。成像单元在与发射信号的接收定时同时接收曝光信号进行曝光的第一发射/曝光时段中获取对应于曝光的第一曝光量。成像单元在从发射信号的接收定时经过延迟时间之后接收曝光信号在第二发射/曝光时段获取与曝光相对应的第二曝光量。计算单元基于通过改变第一发射/曝光时段中的发射信号的重复计数获得的第一曝光量和第二曝光量来计算距离信息

4. 发明授权

US09048164B2 Solid-state image sensing device containing electron multiplication function having N-type floating diffusion (FD) region formed within a P-type well region 有权
标题翻译：含有形成在P型阱区内的具有N型浮动扩散（FD）区域的电子倍增功能的固体摄像装置
公开(公告)号：US09048164B2
公开(公告)日：2015-06-02
申请号：US12920144
申请日：2010-01-27
申请人： Hisanori Suzuki , Yasuhito Yoneta , Shin-ichiro Takagi , Kentaro Maeta , Masaharu Muramatsu
发明人： Hisanori Suzuki , Yasuhito Yoneta , Shin-ichiro Takagi , Kentaro Maeta , Masaharu Muramatsu
IPC分类号： H01L27/148 , H04N5/335 , H04N5/372
CPC分类号： H01L27/1485 , H01L27/1464 , H01L27/14843 , H04N5/335 , H04N5/37213
摘要： A solid state imaging device includes a P-type semiconductor substrate 1A, a P-type epitaxial layer 1B grown on the semiconductor substrate 1A, an imaging region VR grown within the epitaxial layer 1B, and an N-type semiconductor region 1C grown within the epitaxial layer 1B. The solid state imaging device further includes a horizontal shift register HR that transmits a signal from the imaging region VR, and a P-type well region 1D formed within the epitaxial layer 1B. The N-type semiconductor region 1C extends in the well region 1D. A P-type impurity concentration in the well region 1D is higher than a P-type impurity concentration in the epitaxial layer 1B. A multiplication register EM that multiplies electrons from the horizontal shift register HR is formed in the well region 1D.
摘要翻译：固态成像装置包括P型半导体衬底1A，在半导体衬底1A上生长的P型外延层1B，在外延层1B内生长的成像区域VR以及在该外延层1B内生长的N型半导体区域1C 外延层1B。固态成像装置还包括从成像区域VR发送信号的水平移位寄存器HR以及形成在外延层1B内的P型阱区域1D。 N型半导体区域1C在阱区域1D中延伸。阱区1D中的P型杂质浓度高于外延层1B中的P型杂质浓度。在阱区域1D中形成有乘法电路从水平移位寄存器HR乘以的乘法寄存器EM。

5. 发明申请

US20150014750A1 SOLID-STATE IMAGING APPARATUS, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS 有权
标题翻译：固态成像装置，其制造方法和电子装置
公开(公告)号：US20150014750A1
公开(公告)日：2015-01-15
申请号：US14323510
申请日：2014-07-03
申请人： Sony Corporation
发明人： Tomokazu Ohchi
IPC分类号： H01L27/148 , H01L27/146
CPC分类号： H01L27/14689 , H01L27/14614 , H01L27/1462 , H01L27/14656 , H01L27/148 , H01L27/14843
摘要： A solid-state imaging apparatus includes a semiconductor substrate in which a charge transfer section configured to transfer a charge generated in a photoelectric conversion section is formed. The semiconductor substrate includes a surface that is formed in a convex shape in an area in which the charge transfer section is formed.
摘要翻译：固态成像装置包括半导体基板，其中形成电荷转移部分，其被配置为传送在光电转换部分中产生的电荷。半导体衬底包括在其中形成电荷转移部分的区域中形成为凸形的表面。

6. 发明授权

US08878255B2 Image sensors with multiple output structures 有权
标题翻译：具有多个输出结构的图像传感器
公开(公告)号：US08878255B2
公开(公告)日：2014-11-04
申请号：US13735542
申请日：2013-01-07
申请人： Semiconductor Components Industries, LLC
发明人： Shen Wang
IPC分类号： H01L27/148 , H01L21/02 , H01L21/00 , H01L29/768
CPC分类号： H01L27/14868 , H01L27/14806 , H01L27/14812 , H01L27/14831 , H01L27/14843 , H01L29/76816
摘要： In various embodiments, image sensors incorporate multiple output structures by including multiple sub-arrays, at least one of which includes a region of active pixels, a dark pixel region that is fanned and/or slanted, a dark pixel region that is unfanned and unslanted, a horizontal CCD, and an output structure for conversion of charge to voltage.
摘要翻译：在各种实施例中，图像传感器通过包括多个子阵列并入多个输出结构，其中至少一个包括有源像素的区域，被扇形和/或倾斜的暗像素区域，未示出和未被隐藏的暗像素区域，水平CCD，以及用于将电荷转换成电压的输出结构。

7. 发明申请

US20140191355A1 IMAGE SENSORS WITH MULTIPLE OUTPUT STRUCTURES 有权
标题翻译：具有多个输出结构的图像传感器
公开(公告)号：US20140191355A1
公开(公告)日：2014-07-10
申请号：US13735542
申请日：2013-01-07
申请人： Truesense Imaging, Inc.
发明人： Shen Wang
IPC分类号： H01L27/148
CPC分类号： H01L27/14868 , H01L27/14806 , H01L27/14812 , H01L27/14831 , H01L27/14843 , H01L29/76816
摘要： In various embodiments, image sensors incorporate multiple output structures by including multiple sub-arrays, at least one of which includes a region of active pixels, a dark pixel region that is fanned and/or slanted, a dark pixel region that is unfanned and unslanted, a horizontal CCD, and an output structure for conversion of charge to voltage.
摘要翻译：在各种实施例中，图像传感器通过包括多个子阵列并入多个输出结构，其中至少一个包括有源像素的区域，被扇形和/或倾斜的暗像素区域，未示出和未被隐藏的暗像素区域，水平CCD，以及用于将电荷转换成电压的输出结构。

8. 发明授权

US08446508B2 Solid state imaging device with optimized locations of internal electrical components 失效
标题翻译：具有内部电气元件优化位置的固态成像装置
公开(公告)号：US08446508B2
公开(公告)日：2013-05-21
申请号：US11472430
申请日：2006-06-22
申请人： Hideo Kanbe
发明人： Hideo Kanbe
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/335 , H01L27/14621 , H01L27/14627 , H01L27/14687 , H01L27/14812 , H01L27/14843
摘要： A solid state imaging device improving and stabilizing imaging characteristic by optimizing a location of a positive hole accumulation layer to an electrode at the periphery of a light receiving portion, and having light receiving portions formed on a substrate and electrodes formed on the substrate at the periphery of the light receiving portion, each electrode including at least a first electrode to which a positive voltage is applied and a second electrode to which only 0 volt or a negative polarity voltage is applied, each light receiving portion having a signal charge accumulation region formed on the substrate and a positive hole accumulation region formed in a surface layer portion of the signal charge accumulation region, each positive hole accumulation region arranged at a distance from the first electrode and arranged so as to overlap the second electrode, and method of producing the same and a camera.
摘要翻译：一种固态成像装置，其通过将空穴积聚层的位置优化到光接收部分的周围的电极，并且具有形成在基板上的光接收部分和在周边的基板上形成的电极来优化和稳定成像特性每个电极包括至少施加正电压的第一电极和仅施加0伏特或负极性电压的第二电极，每个光接收部分具有形成在第一电极上的信号电荷累积区域所述基板和形成在所述信号电荷累积区域的表层部的正空穴积存区域，与所述第一电极配置成与所述第一电极重叠配置的每个空穴积存区域，以及与所述第二电极重叠的方法和相机。

9. 发明申请

US20130075792A1 METAL-STRAPPED CCD IMAGE SENSORS 有权
标题翻译：金属条形CCD图像传感器
公开(公告)号：US20130075792A1
公开(公告)日：2013-03-28
申请号：US13623317
申请日：2012-09-20
申请人： John P. McCarten
发明人： John P. McCarten
IPC分类号： H01L27/148
CPC分类号： H01L27/14843
摘要： In various embodiments, image sensors include strapping grids of vertical and horizontal strapping lines conducting phase-control signals to underlying gate conductors that control transfer of charge within the image sensor.
摘要翻译：在各种实施例中，图像传感器包括垂直和水平捆扎带的捆扎网格，其将相位控制信号传导到控制图像传感器内的电荷转移的底层栅极导体。

10. 发明申请

US20130075582A1 MULTIPLE CLOCKING MODES FOR A CCD IMAGER 有权
公开(公告)号：US20130075582A1
公开(公告)日：2013-03-28
申请号：US13241547
申请日：2011-09-23
申请人： Christopher Parks
发明人： Christopher Parks
IPC分类号： H01L27/148
CPC分类号： H04N5/3728 , H01L27/14806 , H01L27/14843
摘要： A CCD image sensor includes vertical CCD shift registers and gate electrodes disposed over the vertical CCD shift registers. The gate electrodes are divided into distinct groups of gate electrodes. The CCD image sensor is adapted to operate in an accumulation mode and a charge transfer mode, an accumulation mode and a charge shifting mode, or an accumulation mode, a charge transfer mode, and a charge shifting mode. The charge transfer mode has an initial charge transfer phase and a final charge transfer phase. The charge shifting mode has an initial charge shifting phase and a final charge shifting phase.

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