会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 9. 发明授权
    • Endless material for security elements
    • 无尽的材料为安全元素
    • US08783728B2
    • 2014-07-22
    • US12601590
    • 2008-05-27
    • Wittich KauleWolfgang RauscherMarius Dichtl
    • Wittich KauleWolfgang RauscherMarius Dichtl
    • B42D15/00B42D15/10B41F19/06B41M3/14
    • D05B93/00B41F19/062B41M3/14B42D25/324B42D25/342B42D25/355B42D2035/44Y10T83/0538Y10T428/24479Y10T428/24802
    • An anti-counterfeit printed matter forming an invisible image that can be visualized clearly and prevents a visible image from impeding visibility of a visualized invisible image. In the anti-counterfeit printed matter according to this invention, a plurality of object elements are arranged at a predetermined pitch in a matrix, each object element including a first and second object arranged along a first direction on both sides of a boundary at a center, opposing each other, and third and fourth objects arranged along a second direction perpendicular to the first direction on both sides of a boundary at the center, opposing each other. The first object and the second object, and the third object and the fourth object of each object element have a negative/positive relationship. The first object and/or the second object forms a first invisible image. The third object and/or the fourth object forms a second invisible image.
    • 一种形成不可见图像的防伪印刷品,其可以被清楚地可视化并且防止可视图像阻碍可视化的不可见图像的可见性。 在根据本发明的防伪印刷品中,多个物体元素以矩阵形式以预定间距排列,每个物体元件包括沿中心的边界两侧的第一方向布置的第一和第二物体 彼此相对,并且第三和第四物体沿着与第一方向垂直的第二方向在中心的边界的两侧布置,彼此相对。 第一个对象和第二个对象以及每个对象元素的第三个对象和第四个对象都具有负/正的关系。 第一对象和/或第二对象形成第一不可见图像。 第三物体和/或第四物体形成第二不可见图像。
    • 10. 发明申请
    • Semiconductor Device Having a Frontside Contact and Vertical Trench Isolation and Method of Fabricating Same
    • 具有前端接触和垂直沟槽隔离的半导体器件及其制造方法
    • US20070262411A1
    • 2007-11-15
    • US11577313
    • 2005-10-13
    • Wolfgang Rauscher
    • Wolfgang Rauscher
    • H01L21/76H01L29/00
    • H01L21/743H01L21/76283H01L21/84H01L27/1203
    • There is a method of forming a contact post and surrounding isolation trench in a semiconductor-on-insulator (SOI) substrate. The method comprises etching a contact hole and surrounding isolation trench from an active layer of the substrate to the insulating layer, masking the trench and further etching the contact hole to the base substrate layer, filling the trench and contact hole with undoped intrinsic polysilicon and then performing a doping process in respect of the polysilicon material filling the contact hole so as to form in situ a highly doped contact post while the material filling the isolation trench remains non-conductive. The isolation trench and contact post are formed substantially simultaneously so as to avoid undue interference with the device fabrication process.
    • 存在在绝缘体上半导体(SOI)衬底中形成接触柱和围绕隔离沟槽的方法。 该方法包括将接触孔和围绕隔离沟槽从衬底的有源层到绝缘层进行蚀刻,掩蔽沟槽并进一步蚀刻到基底层的接触孔,用未掺杂的本征多晶硅填充沟槽和接触孔,然后 对填充接触孔的多晶硅材料执行掺杂工艺,以便在填充隔离沟槽的材料保持不导通的同时在原位形成高度掺杂的接触柱。 隔离沟槽和接触柱基本上同时形成,以避免对器件制造工艺造成不适当的干扰。