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    • 3. 发明申请
    • SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    • 基板加工装置及制造半导体装置的方法
    • US20120129358A1
    • 2012-05-24
    • US13240545
    • 2011-09-22
    • Unryu OGAWAMasahisa OKUNOTokunobu AKAOShinji YASHIMAAtsushi UMEKAWAKaichiro MINAMI
    • Unryu OGAWAMasahisa OKUNOTokunobu AKAOShinji YASHIMAAtsushi UMEKAWAKaichiro MINAMI
    • H01L21/26H05B6/80
    • H01L21/67109H01L21/67115H01L21/6875H05B6/806
    • Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device that are capable of uniformly heating a substrate while reducing an increase in substrate temperature to reduce a thermal budget. The substrate processing apparatus includes a process chamber configured to process a substrate; a substrate support unit installed in the process chamber to support the substrate; a microwave supply unit configured to supply a microwave toward a process surface of the substrate supported by the substrate support unit, the microwave supply unit including a microwave radiating unit radiating the microwave supplied from a microwave source to the process chamber while rotating; a partition installed between the microwave supply unit and the substrate support unit; a cooling unit installed at the substrate support unit; and a control unit configured to control at least the substrate support unit, the microwave supply unit and the cooling unit.
    • 提供了一种能够均匀加热衬底同时减少衬底温度增加以降低热量预算的衬底处理设备和半导体器件的制造方法。 基板处理装置包括:处理室,被配置为处理基板; 安装在所述处理室中以支撑所述基板的基板支撑单元; 微波供给单元,被配置为向由所述基板支撑单元支撑的所述基板的处理表面供给微波,所述微波供给单元包括微波辐射单元,所述微波辐射单元在旋转的同时将从微波源供应的微波辐射到所述处理室; 安装在所述微波供给单元和所述基板支撑单元之间的隔板; 安装在所述基板支撑单元处的冷却单元; 以及控制单元,被配置为至少控制所述基板支撑单元,所述微波提供单元和所述冷却单元。